Surface structure and phase transition of Ge(1 1 1)-3 × 3-Pb studied by reflection high-energy positron diffraction

We studied the structures and the phase transition of Pb/Ge(1 1 1) surface by using the reflection high-energy positron diffraction. The surface structures at 60 K and 293 K have the 3 × 3 and √3 × √3 periodicities, respectively. The rocking curves measured at both temperatures are nearly the same. This indicates that the equilibrium positions of the surface atoms do not change according to the phase transition. From the analysis of the rocking curve based on the dynamical diffraction theory, we found that at both temperatures the surface structures are composed of the so-called one-up and two-down model. The 3 × 3-√3 × √3 phase transition for the Pb/Ge(1 1 1) surface is interpreted in terms of order-disorder transition.     

The influence of the oxygen exposure on the thermal faceting of W[1 1 1] tip

The oxygen induced faceting of the macroscopic W[1 1 1] tip has been studied for oxygen exposures in the range 0.5-31 L and annealing temperatures 800-1800 K using the field ion microscopy (FIM) technique. After annealing at temperatures lower than 800 K, higher than 1850 K or for exposures lower than 0.5 L faceting was not observed. For exposures 0.5-1.9 L and annealing temperatures 800-1600 K well developed {1 1 2} facets with sharp edges formed. For exposures higher than 2.0 L edges of the {1 1 2} facets were broadening and disappearing, what has been attributed to the formation of three-dimensional tungsten oxides. The oxides could be easily removed by annealing the tip at 1700 K, what leads to formation of sharp facet edges. On the basis of these results a modified procedure of the ultrasharp tip fabrication has been proposed.     

Structure of the SiC (0 0 0 1) 3 × 3 reconstruction studied by surface X-ray diffraction

The surface structure of the 3 × 3 reconstruction of the 4H-SiC (0 0 0 1) surface was investigated with surface X-ray diffraction (SXRD).Of the studied models, the twist model proposed by Starke et al. [U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Reuter, H. Wedler, K. Heinz, J. Furthmuller, P. Kackell, F. Bechstedt, Phys. Rev. Lett. 80 (1998) 758] gave the best fit to the experimental data. The structural parameters were determined accurately.     

Anharmonic effects on B2-FeAl(1 1 0) surface: A molecular dynamics study

Using molecular dynamics simulations and the analytic embedded-atom method (AEAM), the surface anharmonicity of B2-FeAl(1 1 0) has been studied in the temperature range from 0 K to 1400 K. The temperature dependence of the interlayer spacing, mean square vibrational amplitudes, surface phonon frequencies and line-widths, and layer structure factor have been calculated. The obtained results indicate that the anharmonic effects are small in the temperature range from 0 K to 900 K. The temperature dependences of the interlayer spacing indicates that the rippling effect of the B2-FeAl(1 1 0) surface is exhibited by the contraction of Fe surface atoms and the expansion of Al atoms, which persists at high temperatures. The temperature dependence of the layer structure factors shows that the B2-FeAl(1 1 0) surface does not disorder until the temperature of 1300 K.     

Ruthenium adsorption and diffusion on the GaN(0 0 0 1) surface

We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T₁, T₄ and H₃ special sites. We find that the most energetically favorable structure corresponds to the Ru- T₄ model or the ruthenium adatom located at the T₄ site, while the ruthenium adsorption on top of a gallium atom (T₁ position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.     

An ab initio-based approach to phase diagram calculations for GaN(0 0 0 1) surfaces

Surface phase diagrams of GaN(0 0 0 1)-(2 × 2) and pseudo-(1 × 1) surfaces are systematically investigated by using our ab initio-based approach. The phase diagrams are obtained as functions of temperature T and Ga beam equivalent pressure p_Ga by comparing chemical potentials of Ga atom in the vapor phase with that on the surface. The calculated results imply that the (2 × 2) surface is stable in the temperature range of 700-1000 K at 10⁻⁸ Torr and 900-1400 K at 10⁻² Torr. This is consistent with experimental stable temperature range for the (2 × 2). On the other hand, the pseudo-(1 × 1) phase is stable in the temperature range less than 700 K at 10⁻⁸ Torr and less than 1000 K at 10⁻² Torr. Furthermore, the stable region of the pseudo-(1 × 1) phase almost coincides with that of the (2 × 2) with excess Ga adatom. This suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1 × 1) to the (2 × 2) with Ga adatom and vice versa.     

Atomic structure of the carbon induced Si(0 0 1)-c(4 × 4) surface

The atomic and electronic structures of the Si(0 0 1)-c(4 × 4) surface have been studied by scanning tunneling microscopy (STM) and density functional theory (DFT). To explain the experimental bias dependent STM observations, a modified mixed ad-dimer reconstruction model is introduced. The model involves three tilted Si dimers and a carbon atom incorporated into the third subsurface layer per c(4 × 4) unit cell. The calculated STM images show a close resemblance to the experimental ones.     

New reconstruction-stoichiometry correlation for GaAs(0 0 1) surface treated by atomic hydrogen

The structure, stoichiometry and electronic properties of the GaAs(0 0 1)-(2 × 4)/c(2 × 8) surface treated by cycles of atomic hydrogen (AH) exposure and subsequent annealing in UHV were studied with the aim of preparing the Ga-rich surface at low temperatures. Low energy electron diffraction showed reproducible structural transformations in each cycle: AH adsorption at the (2 × 4)/c(2 × 8) surface led to the (1 × 4) structure at low AH exposure and to a (1 × 1) surface at higher AH exposure with subsequent restoration of the (2 × 4)/c(2 × 8) structure under annealing at 450 °C. The cycles of AH treatment preserved the atomic flatness of the GaAs(1 0 0) surface, keeping the mean roughness on to about 0.15 nm. The AH treatment cycles led to the oscillatory behavior of 3dAs/3dGa ratio with a gradual decrease to the value characteristic for the Ga-rich surface. Similar oscillatory variations were observed in the work function. The results are consistent with the loss of As from the surface as a result of the desorption of volatile compounds which are formed after reaction with H. The prepared Ga-rich GaAs(0 0 1) surface showed the stability of the (2 × 4)/c(2 × 8) structure up to the annealing temperature of 580 °C.     

Electronic structure and topography of annealed SrTiO3(1 1 1) surfaces studied with MIES and STM

Perovskites of ABO₃ type like strontium titanate (SrTiO₃) are of great practical concern as materials for oxygen sensors operating at high temperatures. It is well known that the surface layer shows different properties compared to the bulk. Numerous studies exist for the SrTiO₃(1 0 0) and (1 1 0) surfaces which have investigated the changes in the electronic structure and topography as a function of the preparation conditions. They have indicated a rather complex behaviour of the surface and the near surface region of SrTiO₃ at elevated temperatures. Up to now, the behaviour of the SrTiO₃(1 1 1) surfaces under thermal treatment is not sufficiently known. This contribution is intended to work out the relation between alteration of the surface topography with respect to the preparation conditions and the simultaneous changes of the electronic structure. We applied scanning tunneling microscopy (STM) to investigate the surface topography and, additionally, metastable impact electron spectroscopy (MIES) to study the surface electronic structure of reconstructed SrTiO₃(1 1 1) surfaces. The crystals were heated up to 1000 °C under reducing and oxidizing conditions. Both preparation conditions cause strong changes of the surface topography and electronic structure. A microfaceting of the topmost layers is found.     

Quasi-one-dimensional structures on the Si(1 1 1) surface induced by Ba adsorption

Ba-induced quasi-one-dimensional reconstructions of the Si(1 1 1) surface have been investigated by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While the 3 × ‘2’ surface shows double-periodicity along the stripes in STM images consistent with half-order streaks observed in LEED patterns, no sign of the double-periodicity along the chain direction was detected for the 5 × 1 surface. The 5× stripes in STM images show internal structures with multiple rows. The two rows comprising the boundaries of a 5× stripe in the filled-state STM image are found to have 3a × √3/2 spacing across the stripe. The observation of the successive 3× and 2× spacings between the boundary rows supports a structural model proposed for the Ba-induced 5 × 1 Si reconstruction composed of honeycomb chains and Seiwatz chains. The highest coverage 2 × 8 surface does not reveal a quasi-1D row structure in STM images.     

Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

The atomic structure of Cs atoms adsorbed on the Si(0 0 1)(2 × 1) surface has been investigated by coaxial impact collision ion scattering spectroscopy. When 0.5 ML of Cs atoms are adsorbed on Si(0 0 1) at room temperature, it is found that Cs atoms occupy a single absorption site on T3 with a height of 3.18 ± 0.05 Å from the second layer of Si(0 0 1)(2 × 1) surface, and the bond length between Cs and the nearest Si atoms is 3.71 ± 0.05 Å.     

The adsorption of In on the surface of (0 0 1) CdTe

To understand CdTe doping with In, first-principle calculations are performed to obtain the various kinds of surface-structure for In on CdTe (0 0 1) surface. Of all the structures examined, the structure of CdTe (0 0 1) as caused by In adsorption atoms at the fourfold hollow sites with 0.25 monolayer coverage is the most energetically favorable. In atoms are adsorbed on the Cd-terminated surface, whereas below the Te-terminated surface. For the Cd-terminated surface, cadmium vacancy can form spontaneously and is energetically favorable. In atoms are likely to be adsorbed/incorporated at an interstitial site on Te-terminated CdTe (0 0 1) surfaces for most of the range of the chemical potential.     

Theoretical study of Ti and Fe surface alloys on Al(0 0 1) substrate

Accurate density-functional calculations are performed to investigate the formation of Ti and Fe ultrathin alloys on Al(0 0 1) surface. It is demonstrated that a deposition of Ti monolayer on Al(0 0 1) substrate leads to the formation of Al₃Ti surface alloy with Ti atoms arranged according to the L1₂ stacking, distinct from the D0₂₂ structure characteristic of a bulk Al₃Ti compound. A quest for the reason of this distinct atomic arrangement led us to the study of the surface structure of Al₃Ti(0 0 1) compound. It is concluded that even the Al₃Ti(0 0 1) surface is terminated with three layers assuming a L1₂ stacking and hence this stacking fault can be classified as a surface-induced stacking fault. Several possibilities of Fe atoms distributed in the surface region of Al(0 0 1) have been examined. The most stable configuration is the one with the compact Fe monolayer on Al(0 0 1) and covered by one Al monolayer. Lastly, our calculations show that there is no barrier for the penetration of Fe adatoms below the Al(0 0 1) surface; however, such a barrier is present for a Ti-alloyed Al(0 0 1) surface.     

The gold and oxygen (3 × 1) structures on W(1 1 2)

The adsorption of two very different adsorbates, gold and oxygen, induce the formation of a (3 × 1) surface structure on both W(1 1 2) and Mo(1 1 2). In spite of similar adsorbate unit cells, the surface electronic structure, derived from photoemission, exhibits pronounced differences for the two adsorbates. Indeed, both experiment and simulations indicate substantial changes in electronic structures of (1 × 1) and (3 × 1) gold overlayers supported by highly anisotropic (1 1 2) plane. We speculate that (3 × 1) is a favored periodicity in the atomic rearrangement of the (1 1 2) surfaces of molybdenum and tungsten due in part as a result of the initial state band structure of these surfaces.     

Stable reconstruction and adsorbates of InAs(1 1 1)A surface

We investigated the surface properties of InAs(1 1 1)A by low-temperature scanning tunneling microscopy (LT-STM) with atomic resolution and first-principles calculation. Very clear atom image was observed, showing that the surface reconstruction is an In-vacancy structure. We also observed two kinds of adsorbates on the surface. The first-principles calculations indicate that the In-vacancy structure is the most stable surface reconstruction under any experimental conditions, which is consistent with the LT-STM observation. Investigations of adsorption properties of an In atom, an As atom, and an As₂ molecule by the first-principles calculations imply that the observed adsorbates are an In atom and an As₂ molecule.     

Structure and electronic properties of gold adsorbed on Ti(0 0 0 1)

The Au/Ti(0 0 0 1) adsorption system was studied by low energy electron diffraction (LEED) and photoemission spectroscopy with synchrotron radiation after step-wise Au evaporation onto the Ti(0 0 0 1) surface. For adsorption of Au at 300 K, no additional superstructures were observed and the (1 × 1) pattern of the clean surface simply became diffuse. Annealing of gold layers more than 1 ML thick resulted in the formation of an ordered Au-Ti surface alloy. Depending on the temperature and annealing time, three surface reconstructions were observed by LEED: (√3 × √3) R30°, (2 × 2) and a one-dimensional incommensurate (√3 × √3) rectangular pattern. The Au 4f core level and valence band photoemission spectra provided evidence of a strong chemical interaction between gold and titanium. The data indicated formation of an intermetallic interface and associated valence orbital hybridization, together with diffusion of gold into the bulk. Au core-level shifts were found to be dependent on the surface alloy stoichiometry.     

Scanning tunneling microscopy observation of initial growth of Sn and Ge1−xSnx layers on Ge(0 0 1) substrates

We have investigated the initial growth of Sn and Ge_1−xSn_x layers on Ge(0 0 1) surface by using scanning tunneling microscopy. After the growth of a 0.035 ML-thick Sn layer at room temperature, Sn clusters lining vertically to a dimer row was observed. In the case of the 0.035-0.018 ML-thick Sn growth at 250 °C, the characteristic surface reconstruction with the step-edge undulation like a comb was observed. In the growth of a Ge_0.994Sn_0.006 layer at 250 °C, the multilayer polynuclear growth with a lot of two-dimensional small domain was observed. These surface reconstructions should be accounted for by the large compressive stress induced in the surface layer due to the incorporation of Sn atoms.     

K-induced surface structural change of Si(1 1 1)-7 × 7 probed by second-harmonic generation

The growth of thin K films on Si(1 1 1)-7 × 7 has been investigated by selecting the input and output polarizations of second-harmonic generation (SHG) at room temperature (RT) and at an elevated temperature of 350 °C. The SH intensity at 350 °C showed a monotonic increase with K coverages up to a saturated level, where low energy electron diffraction (LEED) showed a 3 × 1 reconstructed structure. The additional deposition onto the K-saturated surface at 350 °C showed only a marginal change in the SH intensity. These variations are different from the multi-component variations up to 1 ML and orders of magnitude increase due to excitation of plasmons in the multilayers at RT. The variations of SHG during desorption of K at 350 °C showed a two-step decay with a marked shoulder which most likely corresponds to the saturation K coverage of the Si(1 1 1)-3 × 1-K surface. The dominant tensor elements contributing to SHG are also identified for each surface.     

Thermo-stimulated surface segregation in the ordering alloy Pt80Co20(1 1 1): Experiment and modeling

In this paper, a method of Ionization Spectroscopy (IS) is proposed for the non-destructive layer-by-layer analysis of the elemental composition of a solid surface. Using ionization energy loss spectra, a layer-by-layer concentration profile of the Pt₈₀Co₂₀(1 1 1) alloy surface is obtained for different annealing temperatures. For the disordered Pt₈₀Co₂₀(1 1 1) at room temperature, the first atomic layer consists of pure Pt with damped oscillations in the deeper layers. Heating the sample reduces the oscillations. However, at a temperature of 823 K, a sandwich-like structure of the type Pt/Co/Pt was found in the first three atomic layers. For the ordered state the first atomic layer also consists of pure Pt with bulk concentration in other layers. LEED analysis shows a p(2 × 2) superstructure for the surface of the ordered Pt₈₀Co₂₀(1 1 1) alloy. The segregation behavior in this alloy is further studied by Monte Carlo (MC) simulations combined with the Constant Bond Energy (CBE) model. The results of the MC simulations agree well with the experiments at the higher temperatures, both for the surface composition and the concentration depth profile. At lower temperatures, some discrepancies exist between the MC results and the measured concentration profile.     

Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.