Influence of a controlled oxidation at moderate temperatures on the surface chemistry of nitinol wire

Commercial nitinol wire is oxidised at 480-530 °C/10 min in air. Surface morphology and chemistry is studied in detail using scanning electron microscopy, energy dispersive spectrometry, X-ray diffraction, Raman spectrometry and X-ray photoelectron spectroscopy. It is found that the main oxidation product at both temperatures is rutile containing a few at.% Ni. Beneath the rutile layer, there are titanium sub-oxides, showing characteristic maxima in depth profiles. Nickel in an oxidised state is present on the surface, whereas in a sub-surface region of scales, there is only metallic nickel. Thickness of the total oxide layers is 70 and 140 nm after oxidation at 480 and 530 °C, respectively. The preferential oxidation of titanium causes the formation of a Ni-enriched and Ti-depleted zone, suggesting the presence of Ni₃Ti phase. XRD reveals that the presence of cubic B2 NiTi phase in the base alloy is not affected by oxidation at 480-530 °C/10 min.     

Interface morphologies and magnetization characteristics of Co70Fe30 thin films deposited on conjugated polymer thin films

The surface and interface morphology and magnetization characteristics of Co₇₀Fe₃₀ thin films deposited on bare glass and p-Si/SiO₂ substrates and on conjugated polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) thin films on such substrates have been studied by atomic force microscopy and magneto-optic Kerr effect. It was found that the average absolute magnitude of the coercive field of Co₇₀Fe₃₀ correlates with the roughness of the underlayer prior to Co₇₀Fe₃₀ deposition. P3HT deposited on p-Si/SiO₂ substrates possesses an increased surface roughness as compared to the p-Si/SiO₂ surface, but displays a decreased surface roughness as compared to the one of a bare glass substrate.     

Hydrogen adsorption on Pd/TiFe (110) surface

Adsorption of hydrogen on the TiFe (110) surface covered by palladium monolayer was investigated using the full potential linearized augmented plane wave method within the local density approximation. Influence of palladium coating to adsorption properties of the TiFe (110) surface as well as difference it from Pd/TiFe (100) are discussed.     

Fabrication of high hole-carrier density p-type ZnO thin films by N-Al co-doping

In order to obtain p-type ZnO thin films, effect of atomic ratio of Zn:N:Al on the electronic and structural characteristic of ZnO thin films was investigated. Hall measurement indicated that with the increase of Al doping, conductive type of as-grown ZnO thin films changed from n-type to p-type and then to n-type again, reasons are discussed in details. Results of X-ray diffraction revealed that co-doped ZnO thin films have similar crystallization characteristic (0 0 2 preferential orientation) like that of un-doping. However, SEM measurement indicated that co-doped ZnO thin films have different surface morphology compared with un-doped ZnO thin films. p-type ZnO thin films with high hole concentration were obtained on glass (4.6 × 10¹⁸ cm⁻³) and n-type silicon (7.51 × 10¹⁹ cm⁻³), respectively.     

Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering

CdIn₂O₄ thin films were prepared by direct-current (DC) reactive magnetron sputtering. The structure, surface morphology and the chemical composition of the thin films were analyzed by X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical properties of the films prepared in different oxygen concentration and annealing treatment were determined, and the effects of the preparing conditions on the structure and electrical properties were also explored. It indicates that the CdIn₂O₄ thin films with uniform and dense surface morphology contain mainly CdIn₂O₄, In₂O₃ phases, and CdO phase is also observed. The XPS analysis confirms the films are in oxygen-deficient state. The electrical properties of these films significantly depend on the preparing conditions, the resistivity of the films with the oxygen concentration of 4.29% is 2.95 × 10⁻⁴ Ω cm and the Hall mobility is as high as 60.32 cm²/V s. Annealing treatment can improve the electrical performance of the films.     

Thermal stability of Ag films in air prepared by thermal evaporation

The thermal stability of silver films in air has been studied. Pure Ag films, 250 nm in thickness, were prepared on glass substrates by thermal evaporation process, and subsequently annealed in air for 1 h at temperatures between 200 and 400 °C. The structure and morphology of the samples were investigated by X-ray diffraction, Raman spectra and atomic force microscopy. It is found that the crystallization enhances for the annealed films, and film surface becomes oxidized when annealing temperature is higher than 350 °C. The electrical and optical properties of the films were studied by van der Pauw method and spectrophotometer, respectively. Reflectance drops sharply as Ag films are annealed at temperatures above 250 °C. Film annealed at 250 °C has the maximum surface roughness and the minimum reflectance at 600 nm optical wavelength. Film annealed at 200 °C has the minimum resistivity, and resistivity increases with the increasing of the annealing temperature when temperature is above 200 °C. The results show that both oxidization on film surface and agglomeration of silver film result in infinite of electrical resistivity as the annealing temperature is above 350 °C.     

Surface characterization and microstructure of ITO thin films at different annealing temperatures

In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO) thin film on a glass substrate at room temperature. The surface characteristics of this ITO thin film are then investigated by means of an AFM (atomic force microscopy) method. The influence of postgrowth thermal annealing on the microstructure and surface morphology of ITO thin films are also examined. The results demonstrate that the film annealed at higher annealing temperature (300 °C) has higher surface roughness, which is due to the aggregation of the native grains into larger clusters upon annealing. The fractal analysis reveals that the value of fractal dimension D_f falls within the range 2.16-2.20 depending upon the annealing temperatures and is calculated by the height-height correlation function.     

AlCl3-induced crystallization of amorphous silicon thin films

It is reported that the direct contact between Al and amorphous silicon (a-Si) enhances the crystallization of a-Si films. But the polycrystalline silicon (poly-Si) films crystallized by the direct contact of Al metal film suffer the problems of rough surface. In our study, we utilized the AlCl₃ vapor during the a-Si films deposition instead of Al metal film to enhance crystallization. X-ray diffraction (XRD) shows that the AlCl₃ vapor so successfully enhanced the crystallization of a-Si films that the crystallization was completed in 5 h at 540 °C. And the orientation of the poly-Si film deposited with AlCl₃ vapor is much more random than that of annealed with Al metal under layer. But the average grain size is much larger than that. Moreover, the surface of the AlCl₃-induced crystallized poly-Si film was much smoother than that of the Al-induced poly-Si film. The Al and Cl incorporation into the poly-Si film was confirmed using X-ray photoelectron spectroscopy (XPS) and found that the quantity of Al and Cl incorporated into the Si film was below the detection limit of XPS.     

Adsorption, reaction and desorption of hydrogen on modified Pd(1 1 1) surfaces

The interaction of hydrogen (deuterium) with different modified Pd(1 1 1) surfaces has been investigated. The focus was put on the energy and angel dependence of the desorbing molecules from oxygen covered, potassium covered and vanadium oxide covered surfaces. Conventional adsorption/desorption as well as permeation/desorption experiments were performed. For the oxygen covered surface optimum reaction rates for water production and the energy distribution of the reaction products were determined, both for the reaction of oxygen with molecular hydrogen as well as with atomic hydrogen. Potassium on the surface enhances the activation barrier for hydrogen adsorption resulting in a hyper-thermal desorption flux and a forward focused angular distribution of desorption. Permeation/desorption of deuterium from ultra-thin vanadium oxide films yield mainly thermalized desorbing molecules or slightly hyper-thermal, depending on the oxidation state of the surface oxide.     

Growth of Bi-Sb alloy thin films and their characterization by TEM, PIXE and RBS

Polycrystalline bulk materials of Bi₉₃Sb₇ Bi₈₈Sb₁₂, Bi₈₅Sb₁₅ and Bi₈₀Sb₂₀ were synthesized by melt-quench technique starting from the stoichiometric mixture of constituent elements. The phase purity and compositional uniformity of bulk materials were investigated using powder X-ray diffraction (XRD) and proton induced X-ray emission (PIXE) experiments. The single phase formation and the compositional analysis of thin films were confirmed by transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). X-ray diffraction studies confirmed the phase homogeneity of the materials. Atomic concentration ratio of constituent elements (Bi and Sb) determined by PIXE and RBS revealed that near-stoichiometric composition is nearly the same in the bulk as well as in thin film forms.     

Atomic force microscopy study of thermal stability of silver selenide thin films grown on silicon

Silver selenide thin films were grown on silicon substrates by the solid-state reaction of sequentially deposited Se and Ag films of suitable thickness. Transmission electron microscopy and particle-induced X-ray emission studies of the as-deposited films showed the formation of single phase polycrystalline silver selenide from the reaction of Ag and Se films. Atomic force microscopy images of the as-deposited and films annealed at different temperatures in argon showed the film morphology to evolve into an agglomerated state with annealing temperature. The results indicate that when annealed above 473 K, silver selenide films on silicon become unstable and agglomerate through holes generated at grain boundaries.     

Variations in the structural, optical and electrochemical properties of CeO2-TiO2 films as a function of TiO2 content

Alcohol based sols of cerium chloride (CeCl₃·7H₂O) and titanium propoxide (Ti(OPr)₄) in ethanol mixed in different mole ratios have yielded mixed oxide films on densification at 500 °C. The reversibility of the intercalation/deintercalation reactions has shown electrochemical stability of the films. Addition of TiO₂ in an equivalent mole ratio manifests in producing highly transparent films with appreciable ion storage capacity. The electrochemical studies have revealed the significant role of TiO₂ in controlling the ion storage capacity of the films, as it tends to induce the disorder. In addition, the films prepared from an aged sol are observed to exhibit a much higher ion storage capacity than the films deposited using the as-prepared sol. The X-ray photoelectron spectroscopic studies have provided information on the variation of Ce⁴⁺/Ce³⁺ ratio as a function of increased TiO₂ content in the films. This study has led to a better understanding of the increased ion storage capacity with the increased TiO₂ proportion. The transmission electron microscopic study has demonstrated the presence of CeO₂ nanograins even in films, which are amorphous to X-rays. Elucidation of the structural, optical and electrochemical features of the films has yielded information on aspects relevant to their usage in transmissive electrochromic devices. The films have been found to exhibit properties that can find application as counter electrode in electrochromic smart windows in which they are able to retain their transparency under charge insertion, high enough for practical uses. Also, the fastest coloration-bleaching kinetics for the primary electrochromic electrode (WO₃) working in combination with Ce/Ti (1:1) electrode stimulates the use of latter in electrochromic windows (ECWs).     

Controlling geometric and electronic properties of highly ordered CuPc thin films

Geometric and electronic properties of ordered copper phthalocyanine (CuPc) thin films grown on hydrogen- and antimony-passivated Si(1 1 1) surfaces have been studied using near edge X-ray absorption fine structure (NEXAFS) and photoemission spectroscopy. The H- and Sb-passivations of vicinal Si surfaces resulted in different molecular orientations in thick films, namely upright and near lying molecules, respectively. In the absence of the vicinality, the molecules on the Sb-passivated surface changed towards upright orientation. The work function of the films was monitored during the growth and correlated with the molecular orientation.     

Characteristics of SrBi2Ta2O9 ferroelectric films in an in situ applied low electric field prepared by metalorganic decomposition

SrBi₂Ta₂O₉ (SBT) films were prepared on Pt/TiO₂/SiO₂/Si substrates at 750 °C in oxygen by metalorganic decomposition method. A low electric field was in situ applied during the film crystallization. It was first found that a low electric field and its direction have significant influence on the microstructures and ferroelectric properties of SBT films. Under a positive electric field (assuming that the bottom electrode is electrically grounded), the films show stronger c-axis-preferred orientation than without electric field and under a negative electric field. As a possible origin is proposed that the interface-induced nucleation growth between SBT and Pt coated substrate with application of low electric field plays a key role. Above all, an in situ applied low electric field during the film crystallization is a promising technique controlling film orientation for film preparation by wet chemical method.     

Growth and thermal stability of epitaxial BiFeO3 thin films

We have investigated the oxygen pressure and the temperature dependence on BiFeO₃ thin films deposited on SrTiO₃ substrates by pulsed laser deposition. Reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction measurements indicate that high-quality epitaxial thin films are obtained for and T=650 °C. Outside of this pressure-temperature window, parasitic peaks attributed to β-Bi₂O₃ appear. We find an increase of the out-of-plane lattice parameter with oxygen pressure that we ascribe to Bi-deficiency due to its high volatility at low pressure. Ex-situ anneals have been performed and results show that as-grown single-phase BiFeO₃ thin films degrade after annealing, whereas as-grown BiFeO₃ containing impurity phases evolve toward a single-phase structure. These experiments demonstrate that parasitic phases can stabilize compounds which are usually unstable in air at elevated temperatures.     

Stress induced preferred orientation and phase transition for ternary WCxNy thin films

We deposit ternary WC_xN_y thin films on Si (1 0 0) substrates at 500 °C using direct current (DC) reactive magnetron sputtering in a mixture of CH₄/N₂/Ar discharge, and explore the effects of substrate bias (V_b) on the intrinsic stress, preferred orientation and phase transition for the obtained films by virtue of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and selective area electron diffraction (SAED). We find that with increasing the absolute value of V_b up to 200 V the carbon (x) and nitrogen (y) atom concentrations of WC_xN_y films keep almost constant with the values of 0.75 and 0.25, respectively. The XPS and SAED results, combined with the density-functional theory (DFT) calculations on the electronic structure of WC_0.75N_0.25, show our obtained WC_xN_y films are single-phase of carbonitrides. Furthermore, we find that the compressive stress sharply increases with increasing the absolute value of V_b, which leads to a pronounced change in the preferred orientation and phase structure for the film, in which a phase transition from cubic β-WC_xN_y to hexagonal α-WC_xN_y occurs as V_b is in the range of −40 to −120 V. In order to reveal the relationship between the stress and phase transition as well as preferred orientation, the DFT calculations are used to obtain the elastic constants for β-WC_xN_y and α-WC_xN_y. The calculated results show that the preferred orientation is dependent on the competition between strain energy and surface energy, and the phase transition can be attributed to a decrease in the strain energy.     

Infrared reflection absorption study of carbon monoxide adsorption on Pd/Cu(1 1 1)

Pd-Cu bimetallic surfaces formed through a vacuum-deposition of Pd on Cu(1 1 1) have been discussed on the basis of carbon monoxide (CO) adsorption: CO is used as a surface probe and infrared reflection absorption (IRRAS) spectra are recorded for the CO-adsorbed surfaces. Low energy electron diffraction (LEED) patterns for the bimetallic surfaces reveal six-fold symmetry even after the deposition of 0.6 nm. The lattice spacings estimated by the separations of reflection high-energy electron diffraction (RHEED) streaks increase with increasing Pd thickness. Room-temperature CO exposures to the bimetallic surfaces formed by the Pd depositions less than 0.3 nm thickness generate the IRRAS bands due to the three-fold-hollow-, bridge- and linear-bonded CO to Pd atoms. In particular, on the 0.1 nm-thick Pd surface, the linear-bonded CO band becomes apparent at an earlier stage of the exposure. In contrast, the bridge-bonded CO band dominates the IRRAS spectra for CO adsorption on the 0.6 nm-thick Pd surface, at which the lattice spacing corresponds to that of Pd(1 1 1). A 90 K-CO exposure to the 0.1 nm-thick Pd surface leads to the IRRAS bands caused not only by CO-Pd but also by CO-Cu, while the Cu-related band is almost absent from the spectra for the 0.3 nm-thick Pd surface. The results clearly reveal that local atomic structures of the outermost bimetallic surface can be discussed by the IRRAS spectra for the probe molecule.     

Pd adsorption on Si(1 1 3) surface: STM and XPS study

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd₂Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 °C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd₂Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.     

Surface XPS characterization of NiTi shape memory alloy after advanced oxidation processes in UV/H2O2 photocatalytic system

Surface structure of NiTi shape memory alloy (SMA) was modified by advanced oxidation processes (AOP) in an ultraviolet (UV)/H₂O₂ photocatalytic system, and then systematically characterized with x-ray photoelectron spectroscopy (XPS). It is found that the AOP in UV/H₂O₂ photocatalytic system leads to formation of titanium oxides film on NiTi substrate. Depth profiles of O, Ni and Ti show such a film possesses a graded interface structure to NiTi substrate and there is no intermediate Ni-rich layer like that produced in conventional high temperature oxidation. Except TiO₂ phase, some titanium suboxides (TiO, Ti₂O₃) may also exist in the titanium oxides film. Oxygen mainly presents in metal oxides and some chemisorbed water and OH⁻ are found in titanium oxides film. Ni nearly reaches zero on the upper surface and relatively depleted in the whole titanium oxides film. The work indicates the AOP in UV/H₂O₂ photocatalytic system is a promising way to favor the widespread application of biomedical NiTi SMA by improving its biocompatibility.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.