Effect of correlation between the shallow and deep metastable level subsystems on the excitonic photoluminescence spectra in <Emphasis Type="Italic">n</Emphasis>-GaAs

The excitonic photoluminescence spectra of GaAs epitaxial layers are studied. Changes in the relative arrangement of shallow and deep centers in the tetrahedral lattice are shown to bring about changes in the decay kinetics and the shape of the (D⁰, x) emission line (corresponding to an exciton bound to a shallow neutral donor). This change in the excitonic photoluminescence spectra is caused by dispersion in the exciton binding energy of shallow donors E_D, the dispersion being a result of the influence of the subsystem of deep metastable defects in n-GaAs crystals.     

Excitons in monoclinic zinc diphosphide: The <Emphasis Type="Italic">A</Emphasis>-exciton series and Fano effect

The A-exciton series in the absorption spectra of β-ZnP₂ monoclinic zinc diphosphide samples is investigated at different directions of the wave vector and different polarization states of radiation. It is shown that the oscillator strengths determined for the observed transitions are adequately described by the relationship F _n ∝n^?3 characteristic of S-type exciton states. The assumption is made that the A-exciton series is associated with the partially allowed dipole transitions to nS states of the orthoexciton with Γ ₂ ^? (x) symmetry at m _s =0. These states are mixed, to a first approximation, with nS states of the Γ ₂ ^? (z) singlet exciton due to the spin-orbit 2 interaction and are split off by the long-range (nonanalytical) part of the exchange interaction. The Fano antiresonances arise in the absorption spectra at resonances of the A-exciton series when the radiation vector E (or the induction vector D) has a component along the crystallographic axis c. These antiresonances are induced by the configurational interaction of discrete exciton states of the A series with the continuum of the exciton-phonon spectrum due to indirect transitions to the 1S band of the singlet exciton with phonon emission.     

Low-temperature contribution to the resonant tunneling conductance of a disordered N–I–N junction

A formula for the contribution ΔG ^res(T) to the resonant tunneling conductance of the N–I–N junction (where N is a normal metal and I is an insulator) with a weak (low impurity concentrations) structural disorder in the I layer from the low-temperature “smearing” electron Fermi surfaces in its N shores is obtained. It is shown that the temperature dependence ΔG ^res(T) in such a “dirty” junction qualitatively differs from the corresponding dependence ΔG ₀(T) in a “pure” (without resonant impurities in the I layer) junction: ΔG ^res(T) < 0, d(ΔG ^res)/dT < 0; ΔG ₀(T) > 0, d(ΔG ₀)/dT > 0, which can serve as an experimental test of the presence of impurity tunneling resonances in the disordered I layer.     

Magnetic susceptibility of La<Subscript>2</Subscript>NiO<Subscript>4+δ</Subscript> single crystals with δ = 0.095 and 0.105. Ordering of holes and ferromagnetic heisenberg chains

The temperature dependence of the magnetic susceptibility of La₂NiO_4+δ single crystals with δ = 0.095 and 0.105 has been analyzed. The anomalous dependence of χ(T) characteristic of stripe structures previously found in La_1.8Sr_0.2NiO₄ has been found. Investigation of the dependence χ(T) on the impurity and charge disorder degrees makes it possible to separate the contribution associated with the ordering of holes and impurity oxygen. It has been shown that the contribution from the ordering of holes is well described by the model of ferromagnetic Heisenberg chains of spins S = 1/2. The length of the chains and intrachain interaction J _N have been determined from the temperature dependence χ(T).     

<Emphasis Type="Italic">Z</Emphasis> lineshape versus fourth-generation masses

The dependence of the Z-resonance shape on the location of the threshold of the N\(\bar N\) production (N is the fourth-generation neutrino) is analyzed. The bounds on the existence of the fourth generation are derived from the comparison of the theoretical expression for the Z lineshape with the experimental data. The fourth generation is excluded at 95% C.L. for m _N <46.7±0.2 GeV.     

Investigation of the mechanisms of exciton coherence relaxation in single GaAs/AlGaAs quantum wells by the methods of excitonic induction

The mechanisms of exciton coherence relaxation in GaAs quantum wells in the linear mode have been experimentally investigated. An experimental technique has been developed for measuring the total phase relaxation rate, rates of reversible and temperature-irreversible excitonic phase relaxation, and the radiative decay rate Γ _R of excitonic polarization. The experimental values of Γ _R for a quantum well of specified thickness, obtained for a series of samples, have a spread not larger than 15%. This accuracy made it possible to estimate the shape of the dependence of Γ _R on the well thickness L _Z . It is experimentally found that Γ _R is temperature-independent up to 80 K.     

Reconstruction of the 2D hole gas spectrum for selectively doped <Emphasis Type="Italic">p</Emphasis>-Ge/Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>ix</Subscript> heterostructures

The magnetic field (0≤B≤32 T) and temperature (0.1≤T≤15 K) dependences of longitudinal and Hall resistivities have been investigated for p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 12≤d _w ≤20 nm and hole densities p _s =(1–5)×10¹⁵ m^?2. An extremely high sensitivity of the experimental data (the structure of magnetoresistance traces, relative values of the inter-Landau-level gaps deduced from the activation magnetotransport, etc.) to the quantum well profile is revealed in the cases where the Fermi level reaches the second confinement subband. An unusually high density of localized states between the Landau levels is deduced from the data. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used to evaluate the impurity potential fluctuation characteristics: the random potential amplitude, the nonlinear screening length in the vicinity of integer filling factors v=1 and v=2, and the background density of states (DOS). The described models are suitable for explanation of the observed DOS values, while the short-range impurity potential models fail. For half-integer filling factors, a linear temperature dependence of the effective quantum Hall effect plateau-plateau (PP) transition widths v₀(T) is observed, contrary to the expected scaling behavior of the systems with short-range disorder. The finite T→0 width of the PP transitions may be due to an effective low-temperature screening of a smooth random potential due to the Coulomb repulsion of electrons.     

Full t-matrix approach to quasiparticle interference in non-centrosymmetric superconductors

We develop the full t-matrix theory of quasiparticle interference (QPI)for non-centrosymmetric (NCS) superconductors with Rashba spin-orbit coupling. We give aclosed solution for the QPI spectrum for arbitrary combination and strength of nonmagnetic(V _c ) and magnetic(V _m ) impurity scattering potentials interms of integrated normal and anomalous Green’s functions. The theory is applied to arealistic 2D model of the Ce-based 131-type heavy fermion superconductors. We discuss theQPI dependence on frequency, composition and strength of scattering and compare with Bornapproximation results. We show that the QPI pattern is remarkably stable against changesin the scattering model and can therefore give reliable information on the properties ofRashba-split Fermi surface sheets and in particular on the accidental nodal position ofthe mixed singlet-triplet gap function in NCS superconductors.     

Electrically stimulated motion of dislocations in a constant magnetic field

This paper reports on the results of investigations into the dislocation mobility in n-Si single crystals (N _d =5×10²⁴ m^?3) upon simultaneous exposure to electric (j=3×10⁵ A/m²) and magnetic (B≤1 T) fields. It is found that the introduction of dislocations (≈10⁹ m^?2) into dislocation-free silicon doped with phosphorus leads to the appearance of the paramagnetic component of the magnetic susceptibility. The paramagnetic component increases with an increase in the dopant concentration. Similar transformations in silicon account for the formation of magnetically sensitive impurity stoppers that respond to external magnetic perturbations. An analysis of the behavior of dislocations in electric and magnetic fields has revealed a parabolic dependence of the dislocation path length on the magnetic induction B. The effective charges and mobilities of dislocations are numerically calculated from the results obtained. A model is proposed according to which the observed increase in the dislocation mobility is associated with the decrease in the retarding power of magnetically sensitive stoppers due to a local change in the magnetic characteristics of the material and the spin-dependent reactions stimulated by a magnetic field.     

<Emphasis Type="Italic">Ab initio</Emphasis> theory of the electronic structure and spectra of impurity <Emphasis Type="Italic">nl</Emphasis> ions

The fundamentals of the theory of the electronic structure of impurity clusters and the results of numerical calculations for the iron-, lanthanum-, and actinium-group ions in Me⁺ⁿ: [L]_k clusters are presented. The effects of the interionic distance and ligands in the Me⁺ⁿ: [L]_k clusters on the electronic structure of the nl ^N and nl^N?1n′l′ configurations of the 3d, 4f, and 5f ions are considered. The correspondence between the optical and x-ray spectra of different impurity crystals is also analyzed.     

Growth of (GaAs)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(ZnSe)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solution films and investigation of their structural and some photoelectric properties

Single-crystal films of the substitutional solid solution (GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) on GaAs substrates have been grown using liquid phase epitaxy. The X-ray diffraction patterns, photoluminescence spectra, and current-voltage characteristics of the n-(GaAs)-p-(GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) heterostructures prepared have been investigated. The lattice parameters of the film a _f = 5.6544 Å and the substrate a _s = 5.6465 Å have been determined, and the profile of the molecular distribution of the solid solution components has been obtained. The photoluminescence spectrum of the (GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) films exhibits a narrow peak (against the background of the broad luminescence band) with a maximum in the luminescence intensity at a photon energy of 2.67 eV due to the presence of Zn-Se bonds in the structure (ZnSe is covalently bonded to the tetrahedral lattice of the GaAs matrix). It has been shown that the direct branch of the current-voltage characteristics of the structures under investigation is described by an exponential dependence I = I ₀exp(qV/ckT) at low voltages (V > 0.3 V) and by a power-law dependence I ～ V ^α with exponents α = 4 at V = 0.4–0.8 V, α = 2 at V = 0.8–1.4 V, and α = 1.5 at V > 2 V. The experimental results have been explained in the framework of the double-injection model for the n-p-p ⁺ structure under the condition that the concentration distribution of nonequilibrium charge carriers has a minimum.     

Electron spin filtering in the GaAs/AlGaAs interface space charge field

The circularly polarized recombination radiation produced by optically oriented electrons in GaAs and viewed in the direction of and opposite to the pump light propagation was found to have opposite signs of polarization. The excitation was effected by photons of energy E_hv ≈ E _g + Δ through a transparent AlGaAs window. The opposite signs of circular polarization and its complex dependence on the luminescence wavelength are accounted for by the influence of the space charge field created by the depleted layer near the interface.     

Chiral and deconfinement phase transitions in QED<Subscript>3</Subscript> with finite gauge boson mass

Based on the experimental observation that there is a coexisting region between the antiferromagnetic (AF) and d-wave superconducting (dSC) phases, the influences of gauge boson mass m _a on chiral symmetry restoration and deconfinement phase transitions in QED₃ are investigated simultaneously within a unified framework, i.e., Dyson–Schwinger equations. The results show that the chiral symmetry restoration phase transition in the presence of the gauge boson mass m _a is a typical second-order phase transition; the chiral symmetry restoration and deconfinement phase transitions are coincident; the critical number of fermion flavors N ^c _f decreases as the gauge boson mass m _a increases, which implies that there exists a boundary that separates the N ^c _f –m _a plane into chiral symmetry breaking/confinement region for (N ^c _f , m _a ) below the boundary and chiral symmetry restoration/deconfinement region for (N ^c _f , m _a ) above it.     

Electron paramagnetic resonance in mixed crystals (BaF<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(LaF<Subscript>3</Subscript>)<Subscript>x</Subscript> activated by Ce<Superscript>3+</Superscript> ions

The electron paramagnetic resonance (EPR) spectra of mixed crystals (BaF₂)_{1?x? y}(LaF₃)_x(CeF₃)_y (y = 0.001 = 0.1%, x = 0–0.02) are investigated in a magnetic field H‖C₄ at a frequency of 9.5 GHz. The angular dependence of the EPR spectrum is measured for the sample with x = 0.02. The lines attributed to Ce³⁺ impurity centers with tetragonal symmetry and g factors (g_‖ = 0.75, g_⊥ = 2.4) close to those measured for the KY₃F₁₀: Ce³⁺ compound are separated in the complex EPR spectrum. The assumption is made that the aforementioned impurity centers are cubooctahedral clusters of the La₆F₃₇ type in which one of the La³⁺ ions is replaced by the Ce³⁺ ion.     

Luminescence of tungsten centers in zinc selenide

Luminescence spectra of W centers in ZnSe are studied. Radiative d–d transitions are identified by the Tanabe–Sugano diagram of the crystal field theory. It is found that the type of electronic transitions changes with a significant change in spectral characteristics of impurity radiation during the transition fromthe 3d- to 5d-electronic systemof impurity centers in the crystals under study.     

Charge-transfer bands in crystals of alkaline earth fluorides with Eu<Superscript>3+</Superscript> and Yb<Superscript>3 + 1</Superscript>

The absorption, luminescence, and excitation spectra of CaF₂, SrF₂, and BaF₂ crystals with EuF₃ or YbF₃ impurity have been investigated in the range 1–12 eV. In all cases, strong wide absorption bands (denoted as CT₁) were observed at energies below the 4f ⁿ -4f ^{n ? 1}5d absorption threshold of impurity ions. Weaker absorption bands (denoted as CT₂) with energies 1.5–2 eV lower than those of the CT₁ bands have been found in the spectra of CaF₂ and SrF₂ crystals with EuF₃ or YbF₃ impurities. The fine structure of the luminescence spectra of CaF₂ crystals with EuF₃ impurities has been investigated under excitation in the CT bands. Under excitation in the CT₁ band, several Eu centers were observed in the following luminescence spectra: C _4v , O _h , and R aggregates. Excitation in the CT₂ bands revealed luminescence of only C _4v defects.     

Dependence of the Daily <Emphasis Type="Italic">N</Emphasis><Subscript><Emphasis Type="Italic">m</Emphasis></Subscript>F2 Values over Mid-Latitude Stations on the Solar and Geomagnetic Activity

The results of studies of the dependence of the daily electron concentration at maximum of the F2 ionospheric layer in January 2008–2015 on the solar and geomagnetic activity are presented. The solar radio emission flux density indices F_10.7 and geomagnetic activity indices A _p were averaged over 27 days, and 〈F_10.7〉₂₇ and 〈A _p 〉₂₇, respectively, were obtained. Based on the data of three stations, 27-day median (with the middle of January 15) daily N _m F2 variations were obtained for 2008–2015. Based on these data, the following paradox was discovered: in January 2014, when the values of the solar activity index F_10.7 were larger than in 2015, the dailyN _m F2 values were smaller. Averaging over four hours of local daytime (10:00–14:00 LT) gave the daily average January 〈N _m F2〉 values for each selected station for each year. To solve this paradox, a double linear regression of 〈N _m F2〉 on 〈F_10.7〉₂₇ and 〈A _p 〉₂₇ was constructed. Due to this, it was concluded that the contribution of geomagnetic activity to daily January 〈N _m F2〉 values is positive. A comparison of the mean square errors of the linear and double linear regressions for 〈F_10.7〉₂₇ and 〈F_10.7〉₈₁ showed that the use of 〈F_10.7〉₂₇ led to smaller errors than the use of 〈F_10.7〉₈₁.     

Using a chiral anomaly to determine the number of colors

The N_c dependence of PPPγ vertices, where P is a pseudoscalar meson and N_c is the number of colors, is analyzed with allowance for the N_c dependence of the quark charges. It is shown that the reactions Kγ → Kπ and π^±γ → π^±η and the decay η → π⁺π^?γ are the best processes for determining N_c. The cross section σ(π^?γ → π^?η) as measured by using the VES facility at IHEP agrees with the value of N_c=3.     

Charge state of a transition metal impurity in II–VI semiconductors

The results of calculating the electronic structure of semiconductor compounds A^IIB^VI: 3d(A = Zn; B = S, Se, Te; 3d = Sc-Cu) at a low content of 3d impurities are discussed. The excess charge of an impurity ion with respect to the charge of the zinc ion is determined for the whole series of 3d impurities. It is found that the excess charge gradually varies from +0.6|e| for the scandium impurity to ?0.2|e| for the copper impurity. Photoionization of an impurity ion is simulated by adding a hole or an electron to the impurity center. The added charge is redistributed between the impurity ion and its nearest neighbors, thus decreasing or increasing the total excess charge of the impurity center by a magnitude of ～ 0.2|e|.     

Stability of the two-dimensional Fermi polaron

A system composed of an ideal gas of N fermions interacting with an impurity particle in two space dimensions is considered. The interaction between impurity and fermions is given in terms of two-body point interactions whose strength is determined by the two-body binding energy, which is a free parameter of the model. If the mass of the impurity is 1.225 times larger than the mass of a fermion, it is shown that the energy is bounded below uniformly in the number N of fermions. This result improves previous, N-dependent lower bounds, and it complements a recent, similar bound for the Fermi polaron in three space dimensions.