Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)<Emphasis Type="Italic">A</Emphasis> substrates

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.     

Epitaxial low-temperature growth of In<Subscript>0.5</Subscript>Ga<Subscript>0.5</Subscript>As films on GaAs(100) and GaAs(111)<Emphasis Type="Italic">A</Emphasis> substrates using a metamorphic buffer

A complex investigation of epitaxial In_0.5Ga_0.5As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In_0.5Ga_0.5As film were matched using the technology of step-graded metamorphic buffer. The electrical and structural characteristics of the grown samples have been studied by the van der Pauw method, atomic force microscopy, scanning electron microscopy, and transmission/ scanning electron microscopy. The surface morphology is found to correlate with the sample growth temperature and doping with silicon. It is revealed that doping of low-temperature In_0.5Ga_0.5As layers with silicon significantly reduces both the surface roughness and highly improves the structural quality. Pores 50–100 nm in size are found in the low-temperature samples.     

Phase transitions in compounds with the Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> structure

Possible structural changes described by the group-subgroup relationships in the Ca₃Ga₂Ge₄O₁₄-type structure (sp. gr. P321) are considered. The most probable phase transitions seem to be those accompanied by lowering of the symmetry to the maximal non-isomorphic subgroups P3 and C2. It is shown that only destructive phase transitions accompanied by symmetry rise up to the minimal non-isomorphic supergroups for the given structure type can take place. The change of the trigonal symmetry to monoclinic is revealed in La₃SbZn₃Ge₂O₁₄, whose crystal structure is refined as a derivative structure of the Ca₃Ga₂Ge₄O₁₄ structure type within the sp. gr. A2 (C2). At ～250°C, La₃SbZn₃Ge₂O₁₄ undergoes a reversible phase transition accompanied by symmetry rise, A2 ? P321. Similar phase transitions, P321 ? A2, are also observed in La₃Nb_0.5Ga_5.5O₁₄ and La₃Ta_0.5Ga_5.5O₁₄ under the hydrostatic pressures 12.4(3) and 11.7(3) GPa, respectively. The mechanisms of compression and phase transition are based on the anisotropic compressibility of a layer structure. With the attainment of the critical stress level in the structure, the elevated compressibility in the (ab) plane gives rise to a phase transition accompanied by the loss of the threefold axis. Attempts to reveal low-temperature phase transitions in a number of representatives of the langasite family have failed.     

Growth and structure of La<Subscript>3</Subscript>Zr<Subscript>0.5</Subscript>Ga<Subscript>5</Subscript>Si<Subscript>0.5</Subscript>O<Subscript>14</Subscript> crystals

The complete X-ray structure determination of Czochralski grown La₃Zr_0.5Ga₅Si_0.5O₁₄ single crystals with the Ca₃Ga₂Ge₄O₁₄ structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo K_α1 radiation, 1920 crystallographically independent reflections, R = 0.0166, R_w = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (～1.2%) from the 3e to 6g position may give rise to the formation of structural defects.     

Gallium vacancy ordering in Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin layers on Si(100), Si(111), and Si(123) substrates

Thin Ga₂Se₃ layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga₃Se₄(100)с(2 × 2) and Ga₂Se₃(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.     

Crystal structure and microtwinning of monoclinic La<Subscript>3</Subscript>SbZn<Subscript>3</Subscript>Ge<Subscript>2</Subscript>O<Subscript>14</Subscript> crystals of the langasite family

The crystal structure of monoclinic La₃SbZn₃Ge₂O₁₄ crystals from the langasite family is determined by X-ray diffraction analysis [a = 5.202(1) Å, b = 8.312(1) Å, c = 14.394(2) Å, β = 90.02(1)°, sp. gr. A2, Z = 2, and R/R _w = (5.2/4.6)%]. The structure is a derivative of the Ca₃Ga₂Ge₄O₁₄-type structure (a = 8.069 Å, c = 4.967 Å, sp. gr. P321, Z = 1). The crystal studied is a polysynthetic twin with the twin index n = 2, whose monoclinic components are related by pseudomerohedry by a threefold rotation axis of the supergroup P321.     

Crystal chemistry of KCuMn<Subscript>3</Subscript>(VO<Subscript>4</Subscript>)<Subscript>3</Subscript> in the context of detailed systematics of the alluaudite family

The crystal structure of new manganese potassium copper vanadate KCuMn₃(VO₄)₃, which was prepared by the hydrothermal synthesis in the K₂CO₃–CuO–MnCl₂–V₂O₅–H₂O system, was studied by X-ray diffraction (R = 0.0355): a = 12.396(1) Å, b = 12.944(1) Å, c = 6.9786(5) Å, β = 112.723(1)°, sp. gr. C2/c, Z = 4, ρ_calc = 3.938 g/cm³. A comparative analysis of the crystal-chemical features of the new representative of the alluaudite family and related structures of minerals and synthetic phosphates, arsenates, and vanadates of the general formula A(1)A(1)′A(1)″A(2)A(2)′M(1)M(2)₂(TO₄)₃ (where A are sites in the channels of the framework composed of MО₆ octahedra and TО₄ tetrahedra) was performed. A classification of these structures into subgroups according to the occupancy of A sites is suggested.     

Stabilization of lattice period in quinary solid solutions of the <Emphasis Type="Italic">A</Emphasis><Superscript>3</Superscript><Emphasis Type="Italic">B</Emphasis><Superscript>5</Superscript> compounds

The stabilizing effect of elastic strains on the lattice period of a quinary solid solution is considered. The expression for the stabilization factor for quinary solid solutions of the A_xB_1?xC_yD_zE_1?y?z type is derived. It is shown that the stabilizing influence of the substrate sharply increases in the vicinity of the region of the chemical spinodal. The stabilization factors are calculated for the Ga_xIn_1?xP_yAs_zSb_1?y?z and A1_xGa_yIn_1?x?yP_zAs_1?z quinary solid solutions isoperiodic to InAs, GaSb, and GaAs. It is shown that in the region of thermodynamic instability the stabilization factor has negative values. The changes in the composition of the above elastically strained quinary solid solutions are analyzed with respect to the equilibrium composition. It is also shown that stabilization of the lattice period does not signify the stabilization of its composition.     

Recombinant formate dehydrogenase from <Emphasis Type="Italic">Arabidopsis thaliana</Emphasis>: Preparation,crystal growth in microgravity,and preliminary X-ray diffraction study

Crystals of high-purity recombinant NAD⁺-dependent formate dehydrogenase from the higher plant Arabidopsis thaliana (AraFDH) were grown in microgravity in the Modul’-1 protein crystallization apparatus on the International Space Station. The space-grown crystals have larger sizes than those grown on Earth. X-ray diffraction data suitable for determining the three-dimensional structure were collected from the space-grown crystals to a resolution of 1.22 Å using an X-ray synchrotron source. The crystals belong to sp. gr. P4₃2₁2; the unit-cell parameters are a = b = 107.865 Å, c = 71.180 Å, α = β = γ = 90°.     

The synthesis and crystal structure of (4<Emphasis Type="Italic">E</Emphasis>)-5(3-chlorophenyl)-<Emphasis Type="Italic">N</Emphasis>-(4-chlorophenyl)-2-diazo3-oxopent-4-enoic acid amide

(4E)-5-(3-Chlorophenyl)-N-(4-chlorophenyl)-2-diazo-3-oxopent-4-enoic acid amide (5) was synthesized from p-chloroaniline to N-(4-chlorophenyl)-2-diazo-3-oxo-butyramide (4) with 3-chlorobenzaldehyde. The yielded product 5 was investigated with X-ray crystallographic, NMR, MS, and IR techniques. Compound 5 (C₁₇H₁₁Cl₂N₃O₂, Formula wt = 360.19), crystallizes in the monoclinic space group P21/c with unit cell parameters a = 10.516(2), b = 17.996(4), c = 8.902(2) Å, α = 90.00, β = 105.36(3), γ = 90.00^°. V = 1624.5(6) ų, Z = 4, D _x = 1.473 Mg m^?3. The final R was 0.0511.     

Crystal structure of the new radical cation salt (<Emphasis Type="Italic">DOET</Emphasis>)<Subscript>4</Subscript>[Fe(CN)<Subscript>5</Subscript>NO]<Subscript>1.25</Subscript>(C<Subscript>6</Subscript>H<Subscript>5</Subscript>Cl)<Subscript>0.75</Subscript>

A new radical cation salt based on 4,5-(1,4-dioxanediyl-2,3-dithio)-4′,5′-ethylenedithiotetrathiafulvalene (DOET) with the photochromic anion [Fe(CN)₅NO]^2?, namely, (DOET)₄[Fe(CN)₅ NO]_1.25(C₆H₅Cl)_0.75, is synthesized. Single crystals of this salt are studied using X-ray diffraction [a = 10.398(2) Å, b = 11.168(2) Å, c = 18.499(4) Å, α = 103.14(3)°, β = 92.80(3)°, γ = 106.02(3)°, V = 1996.3(7) ų, space group \(P\bar 1\), and Z = 1]. In the structure, radical cation layers alternate with anion layers along the c axis. The centrosymmetric dimers are formed by DOET radical cations in the donor layer with packing of the β type. Like the vast majority of DOET-based salts, the new salt possesses semiconductor properties.     

Synthesis and structure of oxovanadium(IV) complexes [VO(<Emphasis Type="Italic">Acac</Emphasis>)<Subscript>2</Subscript>] and [VO(<Emphasis Type="Italic">Sal</Emphasis>: <Emphasis Type="Italic">L</Emphasis>-alanine)(H<Subscript>2</Subscript>O)]

Bis(acetylacetonato)oxovanadium C₁₀H₁₄O₅V (I) and (S)-[2-(N-salicylidene)aminopropionate]oxovanadium monohydrate C₁₀H₉NO₅V (II) are synthesized. The crystal structures of compounds I and II are determined using single-crystal X-ray diffraction. Crystals of compound I are triclinic, a = 7.4997(19) Å, b = 8.2015(15) Å, c = 11.339(3) Å, α = 91.37(2)°, β = 110.36(2)°, γ = 113.33(2)°, Z = 2, and space group \(P\bar 1\). Crystals of compound II are monoclinic, a = 8.5106(16) Å, b = 7.373(2) Å, c = 9.1941(16) Å, β = 101.88(1)°, Z = 2, and space group P2₁. The structures of compounds I and II are solved by direct methods and refined to R₁ = 0.0382 and 0.0386, respectively. The oxovanadium complexes synthesized are investigated by vibrational spectroscopy.     

Raman spectroscopy study of the structure of gallium nitride epitaxial layers of different orientations

The composition nonstoichiometry and structural quality of undoped gallium nitride layers grown by the hydride vapor phase epitaxy on sapphire substrates of different orientations have been estimated using Raman spectroscopy. It is found for the first time that the peak position of the phonon mode E₂(high) in the Raman spectra of gallium nitride films at a wave vector of 572 cm^–1 depends on the initial orientation of sapphire substrate and is low-frequency shifted when passing from Ga-polar to partially N-polar orientation. Additional modes are found in the spectra of GaN layers grown on substrates with m and r orientations. It is shown that a decrease in the composition deviation from stoichiometry, caused by reducing the HCl flow through the gallium source during the growth of GaN layers, leads to an increase in the phonon-mode intensity in the Raman spectrum.     

Absolute structure of La<Subscript>3</Subscript>Ga<Subscript>5</Subscript>SiO<Subscript>14</Subscript> langasite crystals

The absolute structure of La₃Ga₅SiO₁₄ piezoelectric crystals (a = 8.1746(6) Å, c = 5.1022(4) Å, space group P321, Z = 1) with the positive sense of rotation of the plane of polarization is refined using X-ray diffraction analysis (R = 1.37%, R _w = 1.71%, 2413 unique reflections, max sinθ/λ = 1.15 Å^?1). The contributions from the anharmonicity of thermal vibrations of lanthanum atoms are calculated with the use of the components of the third-and fourth-rank tensors. It is demonstrated that these contributions can have a significant effect.     

Crystallization and Preliminary X-ray Diffraction Study of Purine Nucleoside Phosphorylase from the Thermophilic Bacterium <Emphasis Type="Italic">Thermus thermophilus</Emphasis> Strain HB27

Recombinant purine nucleoside phosphorylase from the thermophilic Thermus thermophilus strain encoded by the TT_C0194 gene was purified to homogeneity. The crystallization conditions for the enzyme were found by the vapor-diffusion technique. The crystals of the enzyme suitable for X-ray diffraction were grown under microgravity conditions by the capillary counter-diffusion method. The crystals belong to sp. gr. P2₁2₁2₁ and have the following unit-cell parameters: a = 89.9 Å, b = 121.0 Å, c = 215.7 Å, α = β = γ = 90°. The X-ray diffraction data set suitable for the determination of the three-dimensional structure of purine nucleoside phosphorylase was collected from the grown crystals at the SPring-8 synchrotron facility to 2.5 Å resolution.     

New multicell model for describing the atomic structure of La<Subscript>3</Subscript>Ga<Subscript>5</Subscript>SiO<Subscript>14</Subscript> piezoelectric crystal: Unit cells of different compositions in the same single crystal

Accurate X-ray diffraction study of langasite (La₃Ga₅SiO₁₄) single crystal has been performed using the data obtained on a diffractometer equipped with a CCD area detector at 295 and 90.5 K. Within the known La₃Ga₅SiO₁₄ model, Ga and Si cations jointly occupy the 2d site. A new model of a “multicell” consisting of two different unit cells is proposed. Gallium atoms occupy the 2d site in one of these cells, and silicon atoms occupy this site in the other cell; all other atoms correspondingly coordinate these cations. This structure implements various physical properties exhibited by langasite family crystals. The conclusions are based on processing four data sets obtained with a high resolution (sin θ/λ ≤ 1.35 Å^–1), the results reproduced in repeated experiments, and the high relative precision of the study (sp. gr. P321, Z = 1; at 295 K, a = 8.1652(6) Å, c = 5.0958(5) Å, R/wR = 0.68/0.68%, 3927 independent reflections; at 90.5 K, a = 8.1559(4) Å, c = 5.0913(6) Å, R/wR = 0.92/0.93%, 3928 reflections).     

Crystal-structure refinement of Sr<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript>

The accurate X-ray diffraction study of a Sr₃Ga₂Ge₄O₁₄ crystal was performed based on two X-ray diffraction data sets collected on a diffractometer equipped with a CCD area detector (a = 8.2776(2), c = 5.0415(1) Å, sp. gr. P321, Z = 1, R/wR = 0.78/0.69%, 3645 independent reflections). The structure of Sr₃Ga₂Ge₄O₁₄ is characterized by the presence of two mixed cation sites, which is accompanied by the anharmonic motion not only of cations, but also of two oxygen atoms in general positions. The structures and electromechanical characteristics of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ were compared. The Sr₃Ga₂Ge₄O₁₄ structure is characterized by a larger elongation of the Sr polyhedron along the a axis and, simultaneously, by the smaller unit-cell parameter a compared with Sr₃TaGa₃Si₂O₁₄, which correlates with the ratio of the piezoelectric coefficients d ₁₁. The absence of thermally stable directions in the crystals of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ is consistent with the absence of the anomalous temperature dependence of the dielectric constant ?₃₃.     

Study of structural properties of In<Subscript>x</Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As/In<Subscript>y</Subscript>Al<Subscript>1−<Emphasis Type="Italic">y</Emphasis></Subscript>As heterosystems on InP substrates

The structural properties of In_xGa_1?xAs/In_yAl_1?yAs samples on InP substrates are studied as functions of growth conditions by the method of high-resolution diffractometry. The results obtained and the photoluminescence spectroscopy data are used to optimize the technology of preparation of high-quality heterostructures with sharp interfaces. The parameters of the two-dimensional electron gas of such heterostructures measured at 77 and 300 K are comparable with the best world standards in this field, so these heterostructures may be used to manufacture transistors and integral amplifiers operating at the frequency 40 GHz and even higher.     

Synthesis and crystal structure of the [Co<Subscript>2</Subscript>(Nicotinamide)<Subscript>4</Subscript>(C<Subscript>4</Subscript>H<Subscript>9</Subscript>COO)<Subscript>4</Subscript>(H<Subscript>2</Subscript>O)] complex

The [Co₂ L ₄(C₄H₉COO)₄(H₂O)] coordination compound of cobalt(II) valerate with nicotinamide (L) is synthesized and studied by IR spectroscopy. The crystal structure of the synthesized compound is determined. The crystals are triclinic, and the unit cell parameters are as follows: a = 10.2759(10) Å, b = 16.3858(10) Å, c = 16.4262(10) Å, α = 100.538(10)°, β = 101.199(10)°, γ = 90.813 (10)°, Z = 2, and space group P \(\bar 1\). The structural units of the crystal are dimeric molecular complexes in which pairs of cobalt atoms are linked by triple bridges formed by oxygen atoms of two bidentately coordinated valerate anions and a water molecule. The octahedral coordination of each cobalt atom is complemented by the pyridine nitrogen atoms of two nicotinamide ligands and the oxygen atom of the monodentate valerate group. The hydrocarbon chains of the valerate anions are disordered over two or three positions each.     

Synthesis and structure of (Rb<Subscript>0.50</Subscript>Ba<Subscript>0.25</Subscript>)[UO<Subscript>2</Subscript>(CH<Subscript>3</Subscript>COO)<Subscript>3</Subscript>]

A new compound (Rb_0.50Ba_0.25)[UO₂(CH₃COO)₃] is synthesized and its crystal structure is studied by X-ray diffraction. The compound crystallizes in the form of yellow plates belonging to the cubic crystal system. The unit cell parameter a = 17.0367(1) Å, V = 4944.89(5) ų, space group I \(\bar 4\)3d, Z = 16, and R = 0.0182. The coordination polyhedron of the uranium atom is a hexagonal bipyramid with oxygen atoms of three acetate groups and the uranyl group in the vertices. The crystal chemical formula of the uranium-containing group is AB ₃ ⁰¹ (A = UO ₂ ²⁺ , B ⁰¹ = CH₃COO^?). The oxygen atoms of the acetate groups that enter the coordination polyhedron of uranium are bound to barium and rubidium atoms.