Drag of ballistic electrons by an ion beam

Drag of electrons of a one-dimensional ballistic nanowire by a nearby one-dimensional beam of ions is considered. We assume that the ion beam is represented by an ensemble of heavy ions of the same velocity V. The ratio of the drag current to the primary current carried by the ion beam is calculated. The drag current turns out to be a nonmonotonic function of velocity V. It has a sharp maximum for V near v _nF/2, where n is the number of the uppermost electron miniband (channel) taking part in conduction and v _nF is the corresponding Fermi velocity. This means that the phenomenon of ion beam drag can be used for investigation of the electron spectra of ballistic nanostructures. We note that whereas observation of the Coulomb drag between two parallel quantum wires may in general be complicated by phenomena such as tunneling and phonon drag, the Coulomb drag of electrons of a one-dimensional ballistic nanowire by an ion beam is free of such spurious effects.     

Diffusionless crystal growth in a eutectic system during rapid solidification

Experiments on nonequilibrium rapid eutectic growth are surveyed. The applicability limits of the modern theoretical models describing rapid solidification of binary systems are assessed. A problem of rapid eutectic growth when the local equilibrium is violated in the solute diffusion field (in the bulk liquid and at the solid-liquid interface) is formulated. An analytical solution to the problem of rapid lamellar eutectic growth under local nonequilibrium conditions in the solute diffusion field is found. It is shown that the diffusion-limited growth of a eutectic pattern ceases as soon as a chemically homogeneous crystalline phase begins to grow when the critical point V=V _D is achieved (V is the solid-liquid interface velocity and V _D is the solute diffusion speed in the bulk liquid). At V ≥ V _D, eutectic decomposition is suppressed and the nascent homogeneous crystalline phase has the initial (nominal) chemical composition of the binary system.     

Zur Chronologie des alten Ägypten

The velocityv of the propagation of discharge along the anode of a self-quenchingG—M-counter is a function of total pressureP, pressure of the quenching gasP _D, radius of the cathoder _a and of the anoder _i andV _ü the difference between working- and starting-potential. For the mixtures argon-methylal, argon-alcohol and helium-alcohol isv=v ₀·exp[k·(V _ü/V _e)^1/2] withv ₀ the velocity at the starting potentialV _e v ₀=(a+b·P _D/P)·V _n ^1/2 ·exp [(c?d·P_D/P·V _n ^?1/2 ] andV _n=V _e·(lnr _a/r _i)^?1.k, a, b, c andd are characteristical constants of the filling gas.     

Elastic properties of D<Subscript>2</Subscript>O ices in solid-state amorphization and transformations between amorphous phases

Nonequilibrium phase transformations in D₂O ices, including the solid-state amorphization of ice 1h (1h-hda) and the heating-induced transition cascade hda-lda-1c-1h from high-density amorphous (hda) ice to low-density amorphous (lda) ice followed by crystallization in cubic ice 1c and phase transition to ordinary hexagonal ice 1h, were studied using an ultrasonic technique. It has been shown that, as in H₂O ice, the softening of a crystal lattice or an amorphous network precedes nonequilibrium transformations. However, noticeable isotopic differences in the behavior of the elastic properties of H₂O and D₂O, in particular, their 1h and hda modifications, call for a more detailed study of the structural features of these H₂O and D₂O phases.     

Photoinduced semiconductor-metal phase transition in the surface layer of vanadium dioxide

The photoinduced semiconductor-metal phase transition occurring for a time Δt < 1 ps in the surface layer of vanadium dioxide is studied theoretically. A nonthermal mechanism of instability development is considered. An equation for the order parameter ξ of the photoinduced semiconductor-metal phase transition is derived. It is shown that the transition of the surface layer of VO₂ to the metallic state requires irradiation by a laser pulse whose energy density W exceeds a critical value W _c. The phase transition is initiated at the surface, after which the interface propagates deep into the sample. The critical energy density W _c, the velocity of propagation of the metal-semiconductor interface, the thickness z ₀, and the characteristic time Δt of formation of the metal layer are calculated. The theoretical results obtained are in agreement with the experimental data on irradiation of vanadium dioxide single crystals by high-intensity laser pulses.     

Electro-optical properties of strontium-barium niobate crystals and their relation to the domain structure of the crystals

The electro-optical coefficients r _ij and half-wave voltage V_λ/2 of strontium-barium niobate crystals poled in the ferroelectric phase are shown to vary along the polar axis. The r _ij (z) and V_λ/2(z) dependences indicate the presence of a residual domain density D(z) and clearly depend on the sign of the polarizing field, with r _ij being minimum (D being maximum) near the negative electrode. This character of the D(z) distribution and, hence, the r _ij (z) and V_λ/2(z) coordinate dependences can be explained by predominant domain nucleation near the negative electrode, which is revealed when the switching processes are studied using 90° (Rayleigh) light scattering from domain walls.     

Crystallization and melting of spin-polarized<Superscript>3</Superscript>He

The melting and growth of³He crystals, spin-polarized by an external magnetic field, are different in nature depending on whether the temperature is higher or lower than the characteristic ordering temperatures in the crystal (the Neel temperatureT _N ) and in the liquid (the superfluid transition temperatureT _c ). In the high-temperature region (T≥T _N ,T _c ) the liquid which appears upon melting has a high nonequilibrium spin density. In the low-temperature region (T?T _N ,T _c ) the melting and growth are accompanied by spin supercurrents both in the liquid and in the crystal in addition to mass supercurrents in the liquid. The crystallization waves at the liquid-solid interface should exist in the low-temperature region. With increasing magnetic field the waves change in nature, because the spin currents begin to play a dominant role. The wave spectrum becomes linear with a velocity inversely proportional to the magnetic field. The attenuation of the waves at low enough temperatures is mainly due to the interaction of the moving crystal-liquid interface with thermal spin waves in the crystal. The waves could be weakly damped at temperatures below a few hundreds microkelvins.     

Influence of local nonequilibrium on the rapid solidification of binary alloys

A local-nonequilibrium model of the diffusion of a solute during the rapid solidification of a binary alloy is considered. The model has two characteristic parameters: the diffusion velocity through the interface V _Di and the diffusion velocity in the bulk of the liquid phase V _D. The influence of local nonequilibrium on the separation of an impurity, the stability of the interface, and the dependence of the temperature of the interface on the velocity of the solidification front is investigated. A comparison with experiment is made. Zh. Tekh. Fiz. 68, 45–52 (March 1998)     

Metastable <Emphasis Type="Italic">X</Emphasis> centers in cadmium telluride single crystals

A model is proposed for metastable DX centers formed through Jahn-Teller distortion of the crystal lattice of cadmium telluride, i.e., through the displacement of a D _Cd residual donor impurity atom (where D is a Group III element of the periodic table) to the region of a nearest neighbor interstice. The configuration-coor-dinate diagram for a V _Cd-D _i associated defect is constructed with due regard for the tetrahedral and hexagonal positions of interstitial atoms. The Stokes shift, n-type conductivity, location of the Fermi level, specific features of photoluminescence, and some other effects are explained in terms of the configuration-coordinate diagram. The results of experimental investigations of the energy spectrum of DX centers in cadmium telluride single crystals are in agreement with available theoretical data.     

Correlation of the molecular structure of discotic nematic liquid crystals with their orientational order and specific features of the nematic-isotropic phase transition

The orientational order parameter S of molecules in high-temperature discotic nematic liquid-crystal phases of triphenylene derivatives is investigated as a function of the length of side flexible molecular chains at different temperatures. It is established that the orientational order parameters S in the range of the transition from the nematic phase to the isotropic liquid phase (the N _D -I transition) are smaller than those predicted from the molecular-statistical theory and computer simulation. It is shown that the N _D -I transition is close to both the isolated Landau point and the tricritical point (regardless of the chemical structure of the molecules and the anisotropy of dispersion intermolecular interactions). Consistent explanations are offered for a number of experimental findings, such as the anomalously small changes in the enthalpy and entropy upon the N _D -I transition (as compared to those revealed upon the N-I transition in calamitic nematic liquid crystals), the anomalously strong response of the isotropic phase of discotic nematic liquid crystals to external fields (thermodynamically conjugate to the order parameter S) and the long relaxation times of this response, and the formation of cybotactic discotic molecular clusters in the isotropic phase in the vicinity of the N _D -I transition.     

On wave and rheidity properties of the Earth’s crust

The properties of the Earth’s solid crust have been studied on the assumption that this crust has a block structure. According to the rotation model, the motion of such a medium (geomedium) follows the angular momentum conservation law and can be described in the scope of the classical elasticity theory with a symmetric stress tensor. A geomedium motion is characterized by two types of rotation waves with shortand long-range actions. The first type includes slow solitons with velocities of 0 ≤ V_sol ≤ c0, max = 1–10 cm s^–1; the second type, fast excitons with V₀ ≤ V_ex ≤ V_S–V_P. The exciton minimal velocity (V₀ = 0) depends on the energy of the collective excitation of all seismically active belt blocks proportional to the Earth’s pole vibration frequency (the Chandler vibration frequency). The exciton maximal velocity depends on the velocities of S (V_S ≈ 4 km s^–1) and/or P (V_P ≈ 8 km s^–1) seismic (acoustic) waves. According to the rotation model, a geomedium is characterized by the property physically close to the corpuscular–wave interaction between blocks that compose this medium. The possible collective wave motion of geomedium blocks can be responsible for the geomedium rheidity property, i.e., a superplastic volume flow. A superplastic motion of a quantum fluid can be the physical analog of the geomedium rheid motion.     

Interacting Generalized Ghost Dark Energy in Non-isotropic Background

In this work, the generalized Quantum Chromodynamics (QCD) ghost model of dark energy in the framework of Einstein gravity is investigated. At first, the non-interacting generalized ghost dark energy in a Bianchi type I (BI) background is discussed. Then the equation of state parameter, ω _D = p _D /ρ _D , the deceleration parameter, and the evolution equation of the generalized ghost dark energy are obtained. It was found that, in this case, ω _D cannot cross the phantom line (ω _D >?1) and eventually the universe approaches a de-Sitter phase of expansion (ω _D →?1). Then, this investigation was extended to the interacting ghost dark energy in a non-isotropic universe. It was found that the equation of state parameter of the interacting generalized ghost dark energy can cross the phantom line (ω _D <?1) provided the parameters of the model are chosen suitably. It was considered a specific model which permits the standard continuity equation in this theory. Besides Ω_Λ and Ω _m in standard Einstein cosmology, another density parameter, Ω _σ , is expected by the anisotropy. The anisotropy of the universe decreases and the universe transits to an isotropic flat FRW universe accommodating the present acceleration.     

Almost mobility edges and the existence of critical regions in one-dimensional quasiperiodic lattices

We study a one-dimensional quasiperiodic system described by the Aubry–André model in the small wave vector limit and demonstrate the existence of almost mobility edges and critical regions in the system. It is well known that the eigenstates of the Aubry–André model are either extended or localized depending on the strength of incommensurate potential V being less or bigger than a critical value V _c , and thus no mobility edge exists. However, it was shown in a recent work that for the system with V < V _c and the wave vector α of the incommensurate potential is small, there exist almost mobility edges at the energy E _c±, which separate the robustly delocalized states from “almost localized” states. We find that, besides E _c±, there exist additionally another energy edges E _c′±, at which abrupt change of inverse participation ratio (IPR) occurs. By using the IPR and carrying out multifractal analyses, we identify the existence of critical regions among |E _c±|?≤?|E|?≤?|E _c′±| with the mobility edges E _c± and E _c′± separating the critical region from the extended and localized regions, respectively. We also study the system with V > V _c , for which all eigenstates are localized states, but can be divided into extended, critical and localized states in their dual space by utilizing the self-duality property of the Aubry–André model.     

Growth of (GaAs)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(ZnSe)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solution films and investigation of their structural and some photoelectric properties

Single-crystal films of the substitutional solid solution (GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) on GaAs substrates have been grown using liquid phase epitaxy. The X-ray diffraction patterns, photoluminescence spectra, and current-voltage characteristics of the n-(GaAs)-p-(GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) heterostructures prepared have been investigated. The lattice parameters of the film a _f = 5.6544 Å and the substrate a _s = 5.6465 Å have been determined, and the profile of the molecular distribution of the solid solution components has been obtained. The photoluminescence spectrum of the (GaAs)_{1 ? x} (ZnSe) _x (0 ≤ x ≤ 0.80) films exhibits a narrow peak (against the background of the broad luminescence band) with a maximum in the luminescence intensity at a photon energy of 2.67 eV due to the presence of Zn-Se bonds in the structure (ZnSe is covalently bonded to the tetrahedral lattice of the GaAs matrix). It has been shown that the direct branch of the current-voltage characteristics of the structures under investigation is described by an exponential dependence I = I ₀exp(qV/ckT) at low voltages (V > 0.3 V) and by a power-law dependence I ～ V ^α with exponents α = 4 at V = 0.4–0.8 V, α = 2 at V = 0.8–1.4 V, and α = 1.5 at V > 2 V. The experimental results have been explained in the framework of the double-injection model for the n-p-p ⁺ structure under the condition that the concentration distribution of nonequilibrium charge carriers has a minimum.     

Calculation of the diffusion coefficient in acoustic turbulence

The first (Born) approximation commonly used to calculate the diffusion coefficient D_T of a passive scalar in acoustic turbulence is shown to be insufficient. Even for a small main parameter—the Mach number, M?1—the next approximation gives a larger contribution to D_T than does the first approximation, but negative in sign. We present a procedure for correctly calculating D_T based on the solution of a nonlinear DIA (direct interaction approximation) equation for the mean Green’s function of the problem. We include an additional term in the general formula for D_T that directly describes the compressibility of acoustic turbulence. This term has not been known previously and has been disregarded even in the Born approximation. A positive value was obtained for D_T=CM³u₀/p₀. The spectrum E(x) was assumed to be smooth at distances Δ x～M²?1.     

Superconducting properties of superlattices containing ferromagnetic layers

Using the microscopic theory formulated by de Gennes and extended by Takahashi and Tachiki, we calculate the transition temperatureT _c and the pair functionF for the superlattices consisting of superconducting and ferromagnetic layers. Superconducting layers. (s) and ferromagnetic layers (f) are modeled byV _s ≠0 andI _m,s =0 andV _f =0 andI _m,f ≠0, whereV _s .(V _f ) is the BCS coupling constant andI _m,s (I _m,f ) is the molecular field fors (f) layers.     

Electronic structure and energies of interatomic bonds in the TiSi<Subscript>2</Subscript> compound with a <Emphasis Type="Italic">C</Emphasis>49 crystal structure

Full-electron calculations of the electronic structure of the TiSi₂ compound in the structural modification C49 are performed using the augmented-plane-wave method. The total energy, the electronic band structure, and the density of states are calculated for an extended translational unit cell Ti₄Si₈, which is formed during the growth of a silicon nanowire on a p-Si substrate. Calculations are also carried out for two orthorhombic unit cells of the nonstoichiometric compositions Ti₃Si₉ and Ti₅Si₇. The energies of the interatomic bonds are determined to be E _Si-Si = 1.8 eV, E _Ti-Ti = 2.29 eV, and E _Ti-Si = 4.47 eV. The dependence of the total energy of the unit cell E _tot(V) on the unit cell volume V is obtained by optimizing the unit cell volume. The bulk modulus B ₀ = 132 GPa is determined from the Murnaghan equation of state for solids and the dependence E _tot (V). This value of the bulk modulus is used to estimate the activation energy for interstitial diffusion of silicon atoms Q _i(Si) ≈ 0.8 eV.     

Ein experimenteller Beitrag zu der durch langsame Primärelektronen ausgelösten Sekundärelektronenemission

The energy distribution of secondary electrons emitted from a highly degassed polycristalline Pt surface was investigated as a function of low energy (V _p ) primary electrons 5<V _p <150eV. The measurements were carried out in an UHV of better than 10^?10 mm Hg. The dependence of the numberN _S ^(Ev) of secondary electrons of a fixed energyE _v (3<E _v <12eV) on the energyV _p of the primaries (=isochromates) is studied. A lot of observations can be detected:

1. I.
   The exit depth of true secondary electrons is strongly dependent of their energy.