Adsorption of oxygen on low-index surfaces of the TiAl<Subscript>3</Subscript> alloy

Method of the projector augmented waves in the plane-wave basis within the generalized-gradient approximation for the exchange-correlation functional has been used to study oxygen adsorption on (001), (100), and (110) low-index surfaces of the TiAl₃ alloy. It has been established that the sites that are most energetically preferred for the adsorption of oxygen are hollow (H) positions on the (001) surface and bridge (B) positions on the (110) and (100) surfaces. Structural and electronic factors that define their energy preference have been discussed. Changes in the atomic and electronic structure of subsurface layers that occur as the oxygen concentration increases to three monolayers have been analyzed. It has been shown that the formation of chemical bonds of oxygen with both components of the alloy leads to the appearance of states that are split-off from the bottoms of their valence bands, which is accompanied by the formation of a forbidden gap at the Fermi level and by a weakening of the Ti–Al metallic bonds in the alloy. On the Al-terminated (001) and (110) surfaces, the oxidation of aluminum dominates over that of titanium. On the whole, the binding energy of oxygen on the low-index surfaces with a mixed termination is higher than that at the aluminum-terminated surface. The calculation of the diffusion of oxygen in the TiAl₃ alloy has shown that the lowest barriers correspond to the diffusion between tetrahedral positions in the (001) plane; the diffusion of oxygen in the [001] direction occurs through octahedral and tetrahedral positions. An increase in the concentration of aluminum in the alloy favors a reduction in the height of the energy barriers as compared to the corresponding barriers in the γ-TiAl alloy.     

Impedance analysis of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric ceramic

AC impedance spectroscopy technique has been used to study electrical properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) ceramic. Complex impedance plots were fitted with three depressed semicircles, which are attributed to crystalline layer, plate boundary and grain boundary and all three were found to comprise of universal capacitance nature [C = C0w ⁿ⁻¹]. Grain boundary resistance and capacitance evaluated from complex impedance plots have larger values than that of plate boundary and crystalline layer. The activation energies (E _a) for DC-conductance in grain boundary, plate boundary and crystalline layer are 0.68 eV, 0.89 eV and 0.89 eV, respectively. Relaxation activation energies calculated from impedance plots showed similar values, 0.81 eV and 0.80 eV for crystalline layer and plate boundary, respectively. These activation energy values are found to be consistent with the E _a value of oxygen vacancies in perovskite materials. A mechanism is offered to explain the generation of oxygen vacancies in BLT ceramic and its role in temperature dependence of DC-conductance study.      

Electronic structure and energies of interatomic bonds in the TiSi<Subscript>2</Subscript> compound with a <Emphasis Type="Italic">C</Emphasis>49 crystal structure

Full-electron calculations of the electronic structure of the TiSi₂ compound in the structural modification C49 are performed using the augmented-plane-wave method. The total energy, the electronic band structure, and the density of states are calculated for an extended translational unit cell Ti₄Si₈, which is formed during the growth of a silicon nanowire on a p-Si substrate. Calculations are also carried out for two orthorhombic unit cells of the nonstoichiometric compositions Ti₃Si₉ and Ti₅Si₇. The energies of the interatomic bonds are determined to be E _Si-Si = 1.8 eV, E _Ti-Ti = 2.29 eV, and E _Ti-Si = 4.47 eV. The dependence of the total energy of the unit cell E _tot(V) on the unit cell volume V is obtained by optimizing the unit cell volume. The bulk modulus B ₀ = 132 GPa is determined from the Murnaghan equation of state for solids and the dependence E _tot (V). This value of the bulk modulus is used to estimate the activation energy for interstitial diffusion of silicon atoms Q _i(Si) ≈ 0.8 eV.     

Nonradiative relaxation of photoexcited O<Stack><Subscript>1</Subscript><Superscript>0</Superscript></Stack> centers in glassy SiO<Subscript>2</Subscript>

The processes involved in the excited-state relaxation of hole O ₁ ⁰ centers at nonbridging oxygen atoms in glassy SiO₂ were studied using luminescence, optical absorption, and photoelectron emission spectroscopy. An additional nonradiative relaxation channel, in addition to the intracenter quenching of the 1.9-eV luminescence band, was established to become operative at temperatures above 370 K. This effect manifests itself in experiments as a negative deviation of the temperature-dependent luminescence intensity from the well-known Mott law and is identified as thermally activated external quenching with an energy barrier of 0.46 eV. Nonradiative transitions initiate, within the external quenching temperature interval, the migration of excitation energy, followed by the creation of free electrons. In the final stages, this relaxation process becomes manifest in the form of spectral sensitization of electron photoemission, which is excited in the hole O ₁ ⁰ -center absorption band.     

Dynamics of ions produced by laser ablation of ceramic Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and Al at 193 nm

We study the dynamics of ions produced upon ablation of Al and ceramic Al₂O₃ targets using nanosecond laser pulses at 193 nm (6.4 eV) as a function of the laser fluence from threshold up to 12 J cm⁻². An electrical (Langmuir) probe located at 40 mm from the target surface has been used for determining the ion yield and calculating the kinetic energy distributions. The results for both targets show the existence of a significant amount of ions having kinetic energies >200 eV (≈20% around threshold fluence), and kinetic energies are up to >1.5 keV. The results are related with the existence of direct photonionization processes caused by the photon energy of the laser being higher than the ionization potential of Al (5.98 eV). Comparison of the ion yield when ablating the two types of targets for fluences above threshold to data reported in the literature suggests that the magnitude of the yield and its threshold are parameters depending on the thermal properties of the target rather than on the laser wavelength. Around threshold, the different behavior of ion yield when ablating Al and Al₂O₃ targets suggests that the threshold for neutral aluminium and ion species in the case of ablation of the Al₂O₃ target must be similar.     

Low energy electron attachment to C<Subscript>60</Subscript>

Low energy electron attachment to the fullerene molecule (C₆₀) and its temperature dependence are studied in a crossed electron beam–molecular beam experiment. We observe the strongest relative signal of C₆₀ anion near 0 eV electron energy with respect to higher energy resonant peaks confirming the contribution of s-wave capture to the electron attachment process and hence the absence of threshold behavior or activation barrier near zero electron energy. While we find no temperature dependence for the cross-section near zero energy, we observe a reduction in the cross-sections at higher electron energies as the temperature is increased, indicating a decrease in lifetime of the resonances at higher energies with increase in temperature.     

Microstructures and impedance studies of Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Microstructures and impedance characteristics of chemical-solution-derived Bi_3.15Nd_0.85Ti₃O₁₂ thin films were studied as functions of temperature. A dielectric anomaly was found at around 450°C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi₂Ta₂O₉ in terms of oxygen vacancy conductivity.     

Bias-voltage-induced decomposition of 2-methyl-1,4-naphthoquinone on Ag/AlO<Subscript>x</Subscript>/Al tunnel junction

Bias-voltage-induced decomposition of 2-methyl-1,4-naphthoquinone (MeNQ) dispersed in polystyrene on an Ag/AlO_x/Al tunnel junction is examined using IR reflection absorption spectroscopy. Under no bias voltage, IR bands due to MeNQ decrease only slightly. In contrast, when the Ag electrode is biased to -2.8 eV, which corresponds to the electronic absorption edge of MeNQ, the IR bands of MeNQ are significantly decreased in intensity. Bias voltages of +2.8 eV and ±1.5 eV promote the band-intensity reduction less. These results reveal that hot holes with appropriate energies promote the decomposition of MeNQ on the tunnel junction. PACS 68.47.De; 73.40.Rw; 78.30.-j     

氧原子在Zr(0001)表面附近的扩散

在密度泛函理论计算的基础上,利用微动弹性带（nudged elastic band）方法研究了氧原子在Zr（0001）表面附近的扩散.首先计算了氧原子从稳定的表面面心立方（SFCC）位置向表面六角密排位置的扩散激活能（0.77 eV）;然后计算了氧原子从稳定的SFCC位置扩散到表面下第1层与第2层之间的八面体间隙位置,再继续向表面下第2层与第3层之间的八面体间隙位置扩散的激活能,在此过程中氧原子需克服两个能垒,其激活能分别为2.14和2.57 eV.结果表明,氧原子在Zr（0001）表面上方的扩散比较容易,而氧原子向Zr（0001）表面下的扩散相对较难. 关键词： Zr（0001）表面 微动弹性带 氧的扩散     

Optical properties of thulium orthoferrite TmFeO<Subscript>3</Subscript>

Optical properties of the orthorhombic thulium orthoferrite TmFeO₃ were studied in the spectral range from 0.64 to 5.4 eV. In the weak absorption region, below 2.2 eV, the energies of localized optical transitions in the Tm³⁺ and Fe³⁺ ions were determined. The dispersion relations of the real and imaginary parts of the principal refractive indices along three crystallographic axes were found. In the region of strong absorption, above 2.2 eV, the energies of six charge-transfer transitions were determined. The experimental data fit well to the concept of charge-transfer transitions in the FeO ₆ ^9? octahedral complexes providing a dominant contribution to the optical properties of the orthoferrites. Optical birefringence and its temperature dependence were measured for the three principal directions of light propagation, and the anisotropic magnetic contribution to birefringence in the region of spin-orientational transitions was isolated.     

Photocatalytic ability of Bi<Subscript>6</Subscript>Ti<Subscript>3</Subscript>WO<Subscript>18</Subscript> nanoparticles with a mix-layered Aurivillius structure

Aurivillius phase layered perovskites Bi₆Ti₃WO₁₈ was prepared by the sol-gel citrate-complexation synthesis. The sample developed into the plate-like nanoparticles with the exposed (001) facets. The phase formation and structure have been verified via X-ray polycrystalline powder diffraction (XRD) Rietveld refinements. The nanoparticles were investigated via the measurements such as FE-SEM, TEM, EDS, and the surface analyses. UV–Vis absorption data revealed that the Aurivillius compound has a direct band characteristic with the band energy of 2.214 eV. The band structure of Bi₆Ti₃WO₁₈ nanoparticles was discussed on the base of the experiments and theoretical calculation. Bi³⁺-containing Aurivillius Bi₆Ti₃WO₁₈ shows efficient photocatalytic degradation for rhodamine B dye (RhB) with the visible light irradiation (λ?>?420 nm). Dynamic characteristic of the light-created excitons was measured by the luminescence and decay lifetime. The multivalent properties of W and Ti ions in the Aurivillius-like lattices of Bi₆Ti₃WO₁₈ photocatalyst were discussed.     

Effects of substitutional impurity Au and Si atoms on antiphase boundary energies in Ti3Al: A first principles study

Effects of substitutional impurity atoms Au and Si on the energies of antiphase boundaries (APBs) on {1100} and (0001) planes in a Ti₃Al intermetallic compound were examined using first principles calculations. Au additions reduce the energies of APBs on both {1100} and (0001) planes by up to more than 40%. The reduction tends to be more remarkable especially when the added Au atom has larger number of Al atoms on its second-nearest neighbor sites rather than on first-nearest neighbor ones. In addition, in the case of Si addition, a significant energy reduction was found only for APBs on (0001) planes, and no remarkable dependence of APB energies on the coordinating atoms was found even for APBs on (0001) planes. These results are crucial to both understanding of the effect of APBs on the impurity diffusivity and predicting the ability of impurity atoms to stabilize antiphase domain structure that increases the strength of Ti₃Al dramatically.     

Mobility and diffusion of oxygen isotopes in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6+<Emphasis Type="Italic">x</Emphasis></Subscript>: Monte carlo simulation

The self-diffusion (D₀) and isotope diffusion (D*) coefficients of oxygen in YBa₂Cu₃O_6+x are calculated as functions of the temperature (600–1200 K) and the oxygen content (0<x<1). The Monte Carlo simulation is performed with due regard for both the interaction of oxygen ions at lattice sites in the basal planes of YBa₂Cu₃O_6+x and the interaction between a jumping ion at a saddle point and the environment. Equilibrium thermodynamic characteristics (including the phase diagram and the heat capacity) are calculated in terms of the Hamiltonian of interaction between oxygen ions at the lattice sites. It is found that an increase in the oxygen content leads to a decrease in the diffusion coefficients D₀ and D*, an increase in the effective activation energies for diffusion by 0.3–0.5 eV, and a decrease in the Haven ratio from 1 to ～0.5.     

Features of the formation of an oxide layer on the surface of amorphous Zr<Subscript>41.2</Subscript>Ti<Subscript>13.8</Subscript>Cu<Subscript>12.5</Subscript>Ni<Subscript>10.0</Subscript>Be<Subscript>22.5</Subscript> alloy

Field investigations were performed into the nature of oxidation of Zr_41.2Ti_13.8Cu_12.5Ni_10.0Be_22.5 alloy (Vitreloy-1), a new alloy highly promising for in -vessel mirrors of the ITER (International Thermonuclear Experimental Reactor). The main methods of investigation were X-ray photoelectron spectroscopy and multi-angle ellipsometry. The resistance of the optical properties of Vitreloy-1 against radiation impact was explained by the oxidation of the surface layer, based on the features of the diffusion process in amorphous alloys and of interaction between amorphous metal alloys with hydrogen.     

Anisotropy of the Complex Permittivity of the Kagome-Staircase Compounds Co<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript> and Ni<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript>: Experiment and Ab Initio Calculations

The anisotropy of the components of the complex permittivity of vanadate Co₃V₂O₈ and Co₃V₂O₈ single crystals in the paramagnetic phase are studied by optical ellipsometry in the spectral region 0.5–5.0 eV. Our experimental results support the weak anisotropy of the optical response detected earlier for axes a and c. The optical properties are also investigated along axis b. The properties of both compounds are compared. The optical spectra of both compounds along axis b are shifted toward low energies as compared to axes a and c. The maximum of the main interband absorption band of Co₃V₂O₈ is shifted toward low energies by 0.25–0.3 eV as compared to Co₃V₂O₈. The electronic structure parameters of both compounds are determined. Optical function spectra are analyzed using the results of ab initio band calculations.     

Investigating the effects of phosphorus in a binary-phase TiAl-Ti<Subscript>3</Subscript>Al alloy by first-principles: from site preference,interfacial energetics to mechanical properties

We investigate the site preference of phosphorus (P) and its effects on the mechanicalproperties of the binary phase TiAl-Ti₃Al alloy using a first-principles method in combinationwith empirical criterions. We show that P is energetically sitting at the substitutionalAl site in the Ti₃Al layer of the TiAl/Ti₃Al interface, which can beunderstood from the difference of electronegativity between P and Ti/Al. Both the cleavageenergy (γ _cl ) and the unstablestacking fault energy (γ _us ) decrease withthe presence of P, which indicates the strength of the TiAl/Ti₃Al interface will be weaker andthe mobility of the dislocation will be easier induced by P. Further, we demonstrate thatthe ratio of γ _cl /γ _us of TiAl/Ti₃Alinterface with P is 5.03, 0.19% lower than that of the clean TiAl/Ti₃Al interface, suggesting thatthe P impurity will slightly reduce the ductility of the TiAl/Ti₃Al interface.     

Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

Impedance spectroscopy of vanadium modified BaBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics

In recent years a wide range of Aurivillius layered materials have been introduced. These novel materials are produced in many various forms such as fibers, thin films as well as bulk by using a number of processing routes. As advanced materials they are they have many interesting properties which include a number of useful electrical properties related to separated grain and grain boundary conductivity, impedance, activation energies, etc. In this paper these properties are described and discussed in detail. The electrical properties of the vanadium doped BaBi₂Nb₂O₉ ceramic was measured over a wide range of temperatures by impedance spectroscopy (IS). The separated grain activation energy, calculated from Arrhenius characteristics at temperatures between room temperature and 600 °C, was 1 eV for 0 at.% of vanadium dopant and 1.2 eV for 10 at.%, whereas the activation energies in the grain boundary region were 0.97 and 1.15 eV, respectively. The obtained results suggest the significant role of vanadium dopant, causing ordering the crystalline structure.     

Gap levels of Ti<Superscript>3+</Superscript> on Nb or Li sites in LiNbO<Subscript>3</Subscript>:(Mg):Ti crystals and their effect on charge transfer processes

The Ti dopant occupying Li or Nb sites and the charge transfer processes induced by thermochemical reduction and optical bleaching treatments have been investigated in LiNbO₃ systems using optical absorption and EPR. The Ti³⁺ centers, built preferentially at Nb sites in heavily Mg-codoped crystals, are shown to have absorption bands at 1.62±0.08 eV and 2.65±0.25 eV, which are similar or slightly redshifted compared to Ti³⁺ centers at Li sites in LiNbO₃:Ti crystals. The Ti_Nb^4+/3+ gap level plays an important role in the trapping of electron-polarons in LiNbO₃, double-doped with Mg and Ti; in particular, an enhanced optical detrapping sensitivity for pumping in the 1.3–2.8 eV range is observed, which may be relevant for applications in integrated optics. Evidence indicating the possible existence of bipolarons involving the Ti dopant is presented. PACS 77.84.Dy; 71.55.Ht; 71.38.-Mx; 78.40.Ha; 76.30.Fc