Electron-microscopic study of microcracks in single-crystal Ti<Subscript>3</Subscript>Al

Microcracks in a Ti₃ Al alloy subjected to indentation at room temperature were studied by transmission electron microscopy. The microcracks are shown to grow on \(\{ 0\overline 1 11\} \) pyramidal planes and in the slip bands of 2c + a superdislocations on \(\{ 20\overline 2 1\} \) and \(\{ 11\overline 2 1\} \) pyramidal planes. It is found that, due to the formation of a slip band in the basal plane at a microcrack tip, the propagating microcrack becomes steplike rather than straight. It is shown that a microcrack can nucleate at the line of intersection of \(\{ 11\overline 2 1\} \) pyramidal and \(\{ 0\overline 1 10\} \) prismatic planes.     

Experimental and theoretical investigations of the brittle fracture of Ti<Subscript>3</Subscript>Al

The formation of microcracks upon dislocation interactions was studied by means of TEM analysis. The types of microcracks were classified depending on the orientation of deformation axes in single crystals. The Griffith surface energy was simulated, and the energy of unstable stacking faults was calculated by the molecular dynamics method using the N-particle EAM potentials of the interatomic interaction for Ti₃Al. The Rice—Thompson model was used to study the relationship between the tendency toward cleavage and the plastic relaxation of stresses near a crack tip by the emission of dislocations in Ti₃Al single crystals.     

Formation of microcracks in an indented Ti<Subscript>3</Subscript>Al intermetallic compound

Microcracks in the Ti₃Al alloy indented at room temperature have been analyzed by electron microscopy. Analysis of the microstructure has revealed that microcracks propagate in the {0\(\overline 1 \)11} pyramidal planes and in the slip bands of the 2c + a superdislocations in the {20\(\overline 2 \)1} and {11\(\overline 2 \)1} pyramidal planes. It is found that the formation of a slip band in the basal plane at the microcrack tip leads to a change in the character of microcrack propagation from straight-line to steplike.     

High-temperature deformation and specific features of dislocation structure of Ti<Subscript>3</Subscript>Al

The transmission electron microscopy was used to examine the dislocation structure of intermetallic Ti₃Al after deformation at temperatures T = 1073–1273 K. It is established that its microstructure contains mobile 2c + a and superdislocations. Possible models describing the destruction of barriers associated with 2c + a superdislocations in pyramidal planes are discussed using the results of computer simulation of the superdislocation core structure in Ti₃Al.     

Nucleation of microcracks during dislocation interactions in a Ti<Subscript>3</Subscript>Al single crystal

Reactions between superdislocations involved in deformation in the basal, prismatic, and type-I and II pyramidal planes in single-crystal Ti₃Al are considered. The types of dislocation interactions are established that result in the formation dislocation barriers (microcrack nuclei). The force and energy conditions for microcracks to arise are found. The interaction between a and 2c + a superdislocations results in microcracks with the plane of opening lying in basal and pyramidal planes; the interaction of 2c + a superdislocations in different pyramidal planes results in the formation of microcracks in prismatic and pyramidal planes; and the interaction of a superdislocations in basal and/or pyramidal planes does not cause the formation of dislocation barriers. The types of microcracks are classified in terms of the orientation of deformation axes of single crystals, and the regions of the stereographic triangle are determined characterized by a preferential type of crack opening.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Preparation and electrochemical properties of Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript>/Ti<Subscript>4</Subscript>O<Subscript>7</Subscript> composite for lithium-ion batteries

In order to improve the rate capability of Li₄Ti₅O₁₂, Ti₄O₇ powder was successfully fabricated by improved hydrogen reduction method, then a dual-phase composite Li₄Ti₅O₁₂/Ti₄O₇ has been synthesized as anode material for lithium-ion batteries. It is found that the Li₄Ti₅O₁₂/Ti₄O₇ composite shows higher reversible capacity and better rate capability compared to Li₄Ti₅O₁₂. According to the charge-discharge tests, the Li₄Ti₅O₁₂/Ti₄O₇ composite exhibits excellent rate capability of 172.3 mAh g^?1 at 0.2 C, which is close to the theoretical value of the spinel Li₄Ti₅O₁₂. More impressively, the reversible capacity of Li₄Ti₅O₁₂/Ti₄O₇ composite is 103.1 mAh g^?1 at the current density of 20 C after 100th cycles, and it maintains 84.8% of the initial discharge capacity, whereas that of the bare spinel Li₄Ti₅O₁₂ is only 22.3 mAh g^?1 with a capacity retention of 31.1%. The results indicate that Li₄Ti₅O₁₂/Ti₄O₇ composite could be a promising anode material with relative high capacity and good rate capability for lithium-ion batteries.     

Phase transition in Bi<Subscript>8</Subscript>Fe<Subscript>6</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> multiferroic ceramics

The polycrystalline Bi₈Fe₆Ti₃O₂₇ compound was prepared by a high-temperature solid-state reaction technique. Preliminary structural analysis by X-ray diffraction (XRD) confirms the formation of a single-phase compound in an orthorhombic crystal system at room temperature. The elemental content of the compound was analyzed by EDAX microanalysis. Microstructural analysis by scanning electron microscopy (SEM) shows that the compound has well defined grains, which are distributed uniformly throughout the surface of the pellet sample. Detailed studies of temperature-dependent dielectric response at various frequencies show dielectric anomalies at 380, 389 and 403°C for 10 kHz, 100 kHz, and 1 MHz respectively. The hysteresis loop observed by applying an electric field of 12 kV/cm on the poled sample with smaller remanent polarization supports the existence of ferroelectricity in this material. The value of d₃₃ of the compound was found to be 19 pC/N.      

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Nanosecond photoelectric effects in all-oxide p-n junction of La<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>MnO<Subscript>3</Subscript>/SrNb<Subscript>0.01</Subscript>Ti<Subscript>0.99</Subscript>O<Subscript>3</Subscript>

Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La_0.9Sr_0.1MnO₃/SrNb_0.01Ti_0.99O₃ for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La_0.9Sr_0.1MnO₃ thin film in the p-n junction was irradiated by a laser of ≈20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/MJ for a 308 nm laser pulse.     

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk     

Impedance analysis of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric ceramic

AC impedance spectroscopy technique has been used to study electrical properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) ceramic. Complex impedance plots were fitted with three depressed semicircles, which are attributed to crystalline layer, plate boundary and grain boundary and all three were found to comprise of universal capacitance nature [C = C0w ⁿ⁻¹]. Grain boundary resistance and capacitance evaluated from complex impedance plots have larger values than that of plate boundary and crystalline layer. The activation energies (E _a) for DC-conductance in grain boundary, plate boundary and crystalline layer are 0.68 eV, 0.89 eV and 0.89 eV, respectively. Relaxation activation energies calculated from impedance plots showed similar values, 0.81 eV and 0.80 eV for crystalline layer and plate boundary, respectively. These activation energy values are found to be consistent with the E _a value of oxygen vacancies in perovskite materials. A mechanism is offered to explain the generation of oxygen vacancies in BLT ceramic and its role in temperature dependence of DC-conductance study.      

Processing and some properties of biferroic Bi<Subscript>5</Subscript> Ti<Subscript>3</Subscript> FeO<Subscript>15</Subscript> ceramics

Bi₅Ti₃FeO₁₅ (BTF) is an example of bifferoic Aurivillius phase with perovskite layered structure. Materials on the basis BTF are of substantial interest for new types of magnetoelectric device applications. In this review we discuss technology of preparation biferroic ceramic with composition Bi₅Ti₃FeO₁₅. The ferroelectric layered Bi₅Ti₃FeO₁₅ (BTF) Aurivillius phases were synthesized by solid-phase synthesis reaction from the conventional mixture of oxides, viz. Bi₂O₃, Fe₂O₃, TiO₂. Thermal analysis and mass change efect were used to investigate synthesis effects in the stoichiometric mixture of powders. The crystalline structure was checked by X-ray diffraction method at room temperature. Microstructure was investigated by scanning electron microscopy.     

On the magnetism of Ln<Subscript>2/3</Subscript>Cu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> (Ln = lanthanide)

The magnetic and thermodynamic properties of the complete Ln_2/3Cu₃Ti₄O₁₂ series were investigated. Here Ln stands for the lanthanides La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb. All the samples investigated crystallize in the space group Im[`3]Im\bar{3} with lattice constants that follow the lanthanide contraction. The lattice constant of the Ce compound reveals the presence of Ce⁴⁺ leading to the composition Ce_1/2Cu₃Ti₄O₁₂. From magnetic susceptibility and electron-spin resonance experiments it can be concluded that the copper ions always carry a spin S = 1/2 and order antiferromagnetically close to 25 K. The Curie-Weiss temperatures can approximately be calculated assuming a two-sublattice model corresponding to the copper and lanthanide ions, respectively. It seems that the magnetic moments of the heavy rare earths are weakly coupled to the copper spins, while for the light lanthanides no such coupling was found. The 4f moments remain paramagnetic down to the lowest temperatures, with the exception of the Tm compound, which indicates enhanced Van-Vleck magnetism due to a non-magnetic singlet ground state of the crystal-field split 4f manifold. From specific-heat measurements we accurately determined the antiferromagnetic ordering temperature and obtained information on the crystal-field states of the rare-earth ions.     

Microstructures and impedance studies of Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Microstructures and impedance characteristics of chemical-solution-derived Bi_3.15Nd_0.85Ti₃O₁₂ thin films were studied as functions of temperature. A dielectric anomaly was found at around 450°C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi₂Ta₂O₉ in terms of oxygen vacancy conductivity.     

Microcrack formation upon interaction of superdislocations belonging to different slip planes in Ti<Subscript>3</Subscript>Al

The interaction reactions between the superdislocations accomplishing deformation in the basal, prismatic, and pyramidal (I and II types) planes in Ti₃Al single crystals have been investigated. The types of interactions leading to the formation of dislocation barriers (microcrack nuclei) are established. The microcrack types are classified according to the orientations of the deformation axes of single crystals. Stereographic triangle regions, characterized by a preferred type of crack opening, are found.     

Adsorption of oxygen on low-index surfaces of the TiAl<Subscript>3</Subscript> alloy

Method of the projector augmented waves in the plane-wave basis within the generalized-gradient approximation for the exchange-correlation functional has been used to study oxygen adsorption on (001), (100), and (110) low-index surfaces of the TiAl₃ alloy. It has been established that the sites that are most energetically preferred for the adsorption of oxygen are hollow (H) positions on the (001) surface and bridge (B) positions on the (110) and (100) surfaces. Structural and electronic factors that define their energy preference have been discussed. Changes in the atomic and electronic structure of subsurface layers that occur as the oxygen concentration increases to three monolayers have been analyzed. It has been shown that the formation of chemical bonds of oxygen with both components of the alloy leads to the appearance of states that are split-off from the bottoms of their valence bands, which is accompanied by the formation of a forbidden gap at the Fermi level and by a weakening of the Ti–Al metallic bonds in the alloy. On the Al-terminated (001) and (110) surfaces, the oxidation of aluminum dominates over that of titanium. On the whole, the binding energy of oxygen on the low-index surfaces with a mixed termination is higher than that at the aluminum-terminated surface. The calculation of the diffusion of oxygen in the TiAl₃ alloy has shown that the lowest barriers correspond to the diffusion between tetrahedral positions in the (001) plane; the diffusion of oxygen in the [001] direction occurs through octahedral and tetrahedral positions. An increase in the concentration of aluminum in the alloy favors a reduction in the height of the energy barriers as compared to the corresponding barriers in the γ-TiAl alloy.     

Features of the formation of an oxide layer on the surface of amorphous Zr<Subscript>41.2</Subscript>Ti<Subscript>13.8</Subscript>Cu<Subscript>12.5</Subscript>Ni<Subscript>10.0</Subscript>Be<Subscript>22.5</Subscript> alloy

Field investigations were performed into the nature of oxidation of Zr_41.2Ti_13.8Cu_12.5Ni_10.0Be_22.5 alloy (Vitreloy-1), a new alloy highly promising for in -vessel mirrors of the ITER (International Thermonuclear Experimental Reactor). The main methods of investigation were X-ray photoelectron spectroscopy and multi-angle ellipsometry. The resistance of the optical properties of Vitreloy-1 against radiation impact was explained by the oxidation of the surface layer, based on the features of the diffusion process in amorphous alloys and of interaction between amorphous metal alloys with hydrogen.     

Effect of thermal strain on structure and polarization fatigue of CSD-derived PbZr<Subscript>0.53</Subscript>Ti<Subscript>0.47</Subscript>O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> hetero-structures

PbZr_0.53Ti_0.47O₃/LaNiO₃ (PZT/LNO) hetero-structures have been successfully deposited on MgO, SrTiO₃, Al₂O₃ and Si substrate by chemical solution routes, respectively. The X-ray diffraction measurements show that out-of-plane lattice parameters of PZT increase as increase of thermal expansion coefficient of substrate. Polarization fatigues of Pt/PZT/LNO capacitors are strongly affected by the thermal strain caused by difference of thermal expansion coefficient between PZT and substrate materials. High fatigue resistance of Pt/PZT/LNO can be obtained by using substrate with similar thermal expansion coefficient as PZT. PACS 77.84.Dy; 78.20.Ci; 81.20.Fw