Determination of the ionization coefficient of carbon on an example of silicate glasses analysis by secondary ion mass spectrometry (SIMS)

A method is proposed for the quantitative estimation of the carbon ionization coefficient followed by the determination of its concentration in silicate glasses by secondary ion mass spectrometry (SIMS). The method is based on the calculation of the sputtering ratio of carbon from the surface of silicate glasses. The dependence of the ionization coefficient on the NBO/T parameter (ratio of the number of nonbridging oxygen atoms to the number tetrahedrally coordinated silicon and aluminum ions), corresponding to the structure and composition of the matrix, is shown. The dependences obtained are calibration graphs for the determination of the ionization coefficient and for the subsequent quantitative estimation of carbon in a silicate sample for a particular SIMS instrument and experimental conditions.     

Characterization of high explosive particles using cluster secondary ion mass spectrometry

The use of secondary ion mass spectrometry (SIMS) for the detection and spatially resolved analysis of individual high explosive particles is described. A C(8) (-) carbon cluster primary ion beam was used in a commercial SIMS instrument to analyze samples of high explosives dispersed as particles on silicon substrates. In comparison with monatomic primary ion bombardment, the carbon cluster primary ion beam was found to greatly enhance characteristic secondary ion signals from the explosive compounds while causing minimal beam-induced degradation. The resistance of these compounds to degradation under ion bombardment allows explosive particles to be analyzed under high primary ion dose bombardment (dynamic SIMS) conditions, facilitating the rapid acquisition of spatially resolved molecular information. The use of cluster SIMS combined with computer control of the sample stage position allows for the automated identification and counting of explosive particle distributions on silicon surfaces. This will be useful for characterizing the efficiency of transfer of particulates in trace explosive detection portal collectors and/or swipes utilized for ion mobility spectrometry applications.     

An effect of residual gas component on detected secondary ions during TOF‐SIMS depth profiling and a method to estimate contained component

With regard to Secondary Ion Mass Spectroscopy (SIMS) measurement of atmospheric gas elements, a problem occurs that the detected signal includes background components caused by residual gas along with contained components. Relating to this issue, an available method to quantify the contained components by separating the background ones had been established for Dynamic SIMS. Time‐of‐Flight SIMS with sputtering ion gun has also applied for depth profiling as well as Dynamic SIMS. However, few studies have attempted to investigate the secondary ion behavior of the atmospheric gas elements for depth profiling by Time‐of‐flight SIMS, especially for low concentration levels. In this study, experimental examinations of the secondary ions of the atmospheric gas elements, such as oxygen, hydrogen, and carbon in the silicon substrate, has been conducted in various analytical conditions of TOF‐SIMS depth profiling mode. Under the analytical conditions of our study, it has been proved that the background intensity of these elements was correlated to the sputtering rate. For the analysis of Floating Zone Silicon substrate, the oxygen intensity of the background component was proportional to the inverse number of the sputtering rate. Based on these facts, the total detected intensity of the atmospheric gas elements was able to be separated into the contained components and background ones by changing the sputtering rate during TOF‐SIMS measurement. An experimental result has shown that the contained oxygen concentration in the Czochralsk Silicon substrate estimated by the “TOF‐SIMS Raster Change Method” has successfully agreed with the result by the Dynamic SIMS.     

Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams

We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time‐of‐flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar₇₀₀ and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials. Copyright © 2009 John Wiley & Sons, Ltd.     

Surface studies of halloysite nanotubes by XPS and ToF‐SIMS

This report provides detailed experimental results of thermal and surface characterization on untreated and surface‐treated halloysite nanotubes (HNTs) obtained from two geographic areas. Surface characterization techniques, including XPS and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) were used. ToF‐SIMS surface analysis experiments were performed with both atomic and cluster ion beams. Higher ion yields and more high‐mass ions were obtained with the cluster ion beams. Static ToF‐SIMS spectra were analyzed with principal component analysis (PCA). Morphological diversities were observed in the samples although they mainly contained tubular structures. Thermogravimetric data indicated that aqueous hydrogen peroxide solution could remove inorganic salt impurities, such as alkali metal salts. The amount of grafting of benzalkonium chloride of HNT surface was determined by thermogravimetic analysis. PCA of ToF‐SIMS spectra could distinguish the samples mined from different geographical locations as well as among surface‐treated and untreated samples. Copyright © 2010 John Wiley & Sons, Ltd.     

Reduction of matrix effects in TOF‐SIMS analysis by metal‐assisted SIMS (MetA‐SIMS)

We investigated reduction of the matrix effect in time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) analysis by the deposition of a small amount of metal on the sample surfaces (metal‐assisted SIMS or MetA‐SIMS). The metal used was silver, and the substrates used were silicon wafers as electroconductive substrates and polypropylene (PP) plates as nonelectroconductive substrates. Irganox 1010 and silicone oil on these substrates were analyzed by TOF‐SIMS before and after silver deposition. Before silver deposition, the secondary ion yields from the substances on the silicon wafer and PP plate were quite different due to the matrix effect from each substrate. After silver deposition, however, both ion yields were enhanced, particularly the sample on the PP plate, and little difference was seen between the two substrates. It was therefore found that the deposition of a small amount of metal on the sample surface is useful for reduction of the matrix effect. By reducing the matrix effect using this technique, it is possible to evaluate from the ion intensities the order of magnitude of the quantities of organic materials on different substrates. In addition, this reduction technique has clear utility for the imaging of organic materials on nonuniform substrates such as metals and polymers. MetA‐SIMS is thus a useful analysis tool for solving problems with real‐world samples. Copyright © 2005 John Wiley & Sons, Ltd.     

Secondary ion mass spectrometry in the characterisation of boron-based ceramics

A secondary ion mass spectrometry (SIMS) study of Zr- and Ti-based borides is reported: ZrB2 ceramic samples (with and without nickel addition) and a TiB2-Ni-B4C/Cu joint were investigated. For Zr-based samples, SIMS measurements show evidence for induced effects by the presence of nickel with regard to oxygen and hydrogen absorption and zirconia formation. In the case of the TiB2-Ni-B4C/Cu joint, the ceramic-metal interface region was analysed and the extent of Cu diffusion into the ceramic material was established. SIMS results were in agreement with previously obtained SEM-EDS data.     

Comparative investigations of the secondary ion emission of metal complexes under MeV and keV ion bombardment

A series of ionic and neutral Group VIII transition metal complexes with molecular masses up to 2500 u were analysed by time-of-flight secondary ion mass spectrometry (SIMS) and plasma desorption mass spectrometry (PDMS). The secondary ion emission, the secondary ion yields and the yield ratios Y(PDMS)/Y(SIMS) of 20 ionic and neutral metal complexes were determined. Both techniques generally provide both molecular and fragment ion information. Characteristic fragmentation patterns give useful data for structural characterization. Additionally, the stabilities of different secondary ion species were compared by their half-lives. Both PDMS and SIMS are very sensitive, yielding optimum spectra from total sample sizes as low as 5 nmol, and the sample consumption is negligible.     

Experimental shift allowance in the deconvolution of SIMS depth profiles

We study the deconvolution of the secondary ion mass spectrometry (SIMS) depth profiles of silicon and gallium arsenide structures with doped thin layers. Special attention is paid to allowance for the instrumental shift of experimental SIMS depth profiles. This effect is taken into account by using Hofmann's mixing‐roughness‐information depth model to determine the depth resolution function. The ill‐posed inverse problem is solved in the Fourier space using the Tikhonov regularization method. The proposed deconvolution algorithm has been tested on various simulated and real structures. It is shown that the algorithm can improve the SIMS depth profiling relevancy and depth resolution. The implemented shift allowance method avoids significant systematic errors of determination of the near‐surface delta‐doped layer position. Copyright © 2013 John Wiley & Sons, Ltd.     

ToF‐SIMS characterization of glyoxal surface oxidation products by hydrogen peroxide: A comparison between dry and liquid samples

As one of the simplest volatile organic compounds, glyoxal and its oxidation products were considered to be important precursors to aqueous secondary organic aerosol formation. Herein, we analyzed products from glyoxal oxidation by hydrogen peroxide in dry and liquid samples using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS). ToF‐SIMS spectra and spectral principal component analysis (PCA) were used to investigate surface oxidation products. Dry samples were prepared on clean silicon wafers. Liquid samples consisting of glyoxal and hydrogen peroxide (H₂O₂) were introduced to a vacuum compatible microfluidic reactor prior to UV illumination or dark aging followed by in situ liquid SIMS analysis. A number of reaction products were observed in both dry and liquid samples; different oligomers and carboxylic acids could be formed depending on reaction conditions. In addition, hydrolyzed products were observed in the liquid samples, but not in the dry samples. Although dry samples reveal some products of the aqueous process, they are not fully representative as results from those of the aqueous samples. Our findings suggest that the ability to characterize the liquid surface reaction products provides more realistic information of the reaction products associated with aqueous secondary organic aerosol formation in the atmosphere. Meanwhile, the high mass resolution spectra from the dry sample SIMS measurement are helpful to identify oxidation products in the liquid samples.     

Comparison of ICP-MS and SIMS techniques for determining uranium isotope ratios in individual particles

The determination of uranium isotope ratios in individual particles is of great importance for nuclear safeguards. In the present study, an analytical technique by inductively coupled plasma mass spectrometry (ICP-MS) with a desolvation sample introduction system was applied to isotope ratio analysis of individual uranium particles. In ICP-MS analysis of individual uranium particles with diameters ranging from 0.6 to 4.2 μm in a standard reference material (NBL CRM U050), the use of the desolvation system for sample introduction improved the precision of ²³⁴U/²³⁸U and ²³⁶U/²³⁸U isotope ratios. The performance of ICP-MS with desolvation was compared with that of a conventionally used method, i.e., secondary ion mass spectrometry (SIMS). The analysis of test swipe samples taken at nuclear facilities implied that the performance of ICP-MS with desolvation was superior to that of SIMS in a viewpoint of accuracy, because the problems of agglomeration of uranium particles and molecular ion interferences by other elements could be avoided. These results indicated that ICP-MS with desolvation has an enough ability to become an effective tool for nuclear safeguards.     

ToF‐SIMS characterisation of methane‐ and hydrogen‐plasma‐modified graphite using principal component analysis

Time of flight secondary ion mass spectrometry (ToF‐SIMS) has been used to determine the extent of surface modification of highly ordered pyrolytic graphite (HOPG) samples that were exposed to radio‐frequency methane and hydrogen plasmas. The ToF‐SIMS measurements were examined with the multivariate method of principal component analysis (PCA), to maximise the amount of spectral information retained in the analysis. This revealed that the plasma (methane or hydrogen plasma) modified HOPG exhibited greater hydrogen content than the pristine HOPG. The hydrogen content trends observed from the ToF‐SIMS studies were also observed in elastic recoil detection analysis measurements. The application of the ToF‐SIMS PCA method also showed that small hydrocarbon fragments were sputtered from the hydrogen‐plasma‐treated sample, characteristic of the formation of a plasma‐damaged surface, whereas the methane‐plasma‐treated surface sputtered larger hydrocarbon fragments, which implies the growth of a polymer‐like coating. Scanning tunnelling microscopy measurements of the modified surfaces showed surface features that are attributable to either etching or film growth after exposure to the hydrogen or methane plasma. Copyright © 2009 John Wiley & Sons, Ltd.     

Topography and field effects in secondary ion mass spectrometry Part II: insulating samples

A study is conducted on the effects of sample topography on the secondary ion mass spectrometry (SIMS) analysis of insulating samples, using poly(ethylene terephthalate) fibres (100 µm diameter) as a model system and simulations of the ion extraction field using finite element analysis. We focus on two significant issues: topographic field effects caused by the penetration of the extraction field into the sample, and the effect of charge compensation on the secondary ion images. Guidance is provided for setting the reflector voltage correctly for insulating fibres in reflectron SIMS instruments. The presence of the topographic sample distorts the extraction field, causing the secondary ions to be deflected laterally. This results in the severe loss of ion signals from the sides of the fibres because of the limited angular acceptance of the analyser. Strategies to reduce topographic field effects, including alternative sample mounting methods, are discussed. We also find that, in general, insulating samples are charged by the flood gun electrons resulting in a negative surface potential. This causes large variations in the SIMS images depending on the electron current, electron energy, raster mode and secondary ion polarity. Recommendations are given for analysts to obtain more reproducible images and reduce the effect of differential electron charging, for example by using a lower electron flood beam energy. © 2011 Crown copyright.     

Investigation of ionic liquids under Bi‐ion and Bi‐cluster ions bombardment by ToF‐SIMS

A systematic study of five different imidazolium‐based room temperature ionic liquids, 1‐butyl‐3‐methylimidazolium acetate, 1‐butyl‐3‐methylimidazolium nitrate, 1‐butyl‐3‐methylimidazolium iodide, 1‐butyl‐3‐methylimidazolium hexafluorophosphate and 1‐butyl‐3‐methylimidazolium bis(trifluoromethylsulfonyl)imide were carried out by means of time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) in positive and negative ion mode. The compounds were measured under Bi‐ion and Bi‐cluster ions (Bi_2–7⁺, Bi_{3, 5}²⁺) bombardment, and spectral information and general rules for the fragmentation pattern are presented. Evidence for hydrogen bonding, due to high molecular secondary cluster ions, could be found. Hydrogen bonding strength could be estimated by ToF‐SIMS via correlation of the anionic yield enhancement with solvent parameters. Copyright © 2010 John Wiley & Sons, Ltd.     

Quantitative depth profiling of argon in tungsten films by secondary ion mass spectrometry.

Depth profiling of Ar in Ar-implanted tungsten (W) films with an excellent detection limit was investigated by secondary ion mass spectrometry (SIMS). Depth profiles of Ar with the detection of Ar+ and ArCs+ secondary ions, which were produced by O2+ and Cs+ primary ions, respectively, were compared in view of the detection limit and the depth resolution. The detection limit of Ar monitoring Ar+ was limited by the carbon- and oxygen-containing molecular ion (C2O+) in the sample as well as in the SIMS instrument. It was observed that some of the Ar+ ions were produced in the vacuum above the sample surfaces, whereas the ionization of almost all C2O+ occurred at the samples. By using different energy spectra between Ar+ and C2O+, we showed that the energy-filtering technique is advantageous for suppressing C2O+ ion detection. It is also confirmed that the ArCs+ secondary ion is only slighting by the C2OCs+ mass-interference ion. A detection limit of 4 x 10(18) cm(-3) for monitoring Ar+ and 3 x 10(16) cm(-3) for monitoring ArCs+ was achieved under a primary-ion current density of 0.16 mA/cm2. The detection of ArCs+ ion rather than Ar+ was found to be superior in the detection limit and the depth resolution. We conclude that SIMS is useful for the determination of the Ar depth distribution in W films.     

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometer analysis of the grain boundary segregation/precipitation of boron in steel

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometry (FIB‐TOF‐SIMS) analysis was performed to investigate the grain boundary segregation/precipitation of boron in steel. To overcome the low secondary ion yield from the primary Ga⁺ source and the sensitivity using a high‐resolution Ga‐FIB source, a low energy oxygen ion beam was used prior to the Ga‐FIB‐TOF‐SIMS analysis. As a result, it was found that Ga‐FIB‐TOF‐SIMS is a very powerful tool for mapping boron segregation and/or precipitation in steel with a spatial resolution of ~200 nm. In addition, the results were strongly dependent on the surface composition. Copyright © 2014 John Wiley & Sons, Ltd.     

TOF‐SIMS matrix effects in mixed organic layers in Ar cluster ion depth profiles

Matrix effects are crucial for analyses using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) in terms of quantitative analysis, depth profiling and imaging. It is often difficult to predict how co‐existing materials will influence each other before such analysis. However, matrix effects need to be curtailed in order to assume the appropriate amount of a target material in a sample. First, matrix effects on different types of organic mixed samples, including a sample composed of Irganox 1010 and Irganox 1098 (MMK sample) and another composed of Irganox 1010 and Fmoc‐pentafluoro‐L‐phenylalanine (MMF sample), were observed utilizing ToF‐SIMS and the dependence of the secondary ion polarity of the matrix effects on the same sample was evaluated. Next, the correction method for the ToF‐SIMS matrix effects proposed by Shard et al. was applied to a comparison of the positive secondary ion results to the negative ones. The matrix effects on the positive ion data in both samples were different from those on the negative ion data. The matrix effect correction method worked effectively on both the negative and positive depth profiles. Copyright © 2017 John Wiley & Sons, Ltd.     

Comparative studies of SIMS and SNMS analyses during the build up of sputter equilibrium under oxygen and rare gas ion bombardment

Sputtering of solid surfaces by using a focused ion beam is the basis for secondary ion mass spectrometry (SIMS) and sputtered neutral mass spectrometry (SNMS). The ion bombardment initiates not only redistribution of sample atoms but also massive changes in the surface and near surface composition of the bombarded area due to the sputter process and implantation of the primary ions. Changes in the matrix-composition affects the secondary ion yields and therefore a steady state (sputter equilibrium) has to be reached before SIMS data can give quantifiable results. SNMS is much less affected by those yield effects and therefore a combination of SIMS and SNMS can establish a basis for interpretation of SIMS data before the steady state is reached. In order to determine the effects of primary ion incorporation, we applied different primary ion species successively to generate different equilibria. An oxygen ion beam oxidizes the sample surface and by using a rare gas primary ion (PI) this oxide can be removed and analyzed.     

Ionic Liquid Matrix-Enhanced Secondary Ion Mass Spectrometry: The Role of Proton Transfer

Room temperature ionic liquids (ILs) are effective matrices in secondary ion mass spectrometry (SIMS) and matrix assisted laser desorption ionization (MALDI). In this paper, we examine the role of proton transfer in the mechanism of secondary ion enhancement using IL matrices in SIMS. We employ hydrogenated and deuterated 1,2-dipalmitoyl-sn-glycero-3-phosphocholine (DPPC) as analytes to investigate the origin of proton transfer. The data indicate that protons from the IL anion transfer to the analyte in solution leading to an increase in the secondary ion intensity of the protonated molecular ion. The chemical identity of the matrix cation also affects analyte signal intensities. Using deuterated DPPC we observe that protons (deuterium) from the DPPC tail group react with the cation of the IL liquid leading to an increase in (cation + D)⁺ ion intensities. Further, the data suggest that the transfer kinetics of deuterium (hydrogen) is correlated with the secondary ion enhancements observed. The highest secondary ion enhancements are observed for the least sterically hindered cation. Neither the proton affinity nor the pK_a of the IL cation have a large effect on the analyte ion intensities, suggesting that steric factors are important in determining the efficacy of IL matrices for a given analyte.      

Static TOF‐SIMS — a VAMAS interlaboratory study. Part I. Repeatability and reproducibility of spectra

An interlaboratory study involving 32 Time‐of‐Flight Static SIMS instruments from 12 countries has been conducted. Analysts were supplied, by NPL, with a protocol for analysis together with three reference materials; a thin layer of polycarbonate (PC) on a silicon wafer, a thin layer of polystyrene (PS) oligomers on etched silver and poly(tetrafluoroethylene) (PTFE). The study involved static SIMS analysis of each reference material for both positive and negative polarity secondary ions. The option to test instrument suitability for G‐SIMS was also provided. The results of this study show that over 84% of instruments have excellent repeatabilities of better than 1.9%. Repeatabilities can be as good as 0.4%. A relative instrument spectral response (RISR) is calculated for each instrument for each reference material and ion polarity. The RISR is used to evaluate variations in spectral response between different generic types of SIMS instruments. Use of the RISR allows the identification of contamination, charge stabilisation problems and incorrectly functioning ion detectors. The high quality of the data presented here allows the RISR to reveal differences in individual operation of each instrument such as the use of apertures to remove metastables from the spectra and the use of different post‐acceleration voltages for ion detection. Spectral reproducibility can be measured, here, by the equivalence of RISRs between materials and ion polarities. It is found that reproducibilities are on average 10% but can be as good as 4% for the best instruments. This figure shows the consistency between instruments in measuring spectra from different samples. This study sets out the basic framework to develop static secondary ion mass spectrometry (SSIMS) as a reliable measurement method. © Crown Copyright 2005. Reproduced with the permission of Her Majestry's Stationery Office. Published by John Wiley & Sons, Ltd.