Splitting and storing excitons in strained coupled self-assembled quantum dots

We present a novel self-assembled quantum dot structure designed to spatially separate and store photo-generated electrons and holes in pairs of strain coupled quantum dots. The spatial separation of electron–hole pairs into quantum dots and strain-induced quantum dots has been investigated and verified by photoluminescence experiments. Results from time-resolved PL demonstrates that at low temperatures (3 K) the electron–hole pair can be stored for several seconds.     

Coupling of superconductivity with low-dimensional electron systems in mesoscopic geometries

We describe effects seen in coupled superconductor–semiconductor hybrid systems in various mesoscopic geometries. The hybrid structures consist of niobium films on high mobility InAs:GaSb quantum wells which form high transparency, low-resistance interfaces exhibiting a variety of effects in their resistive transitions and differential resistance scans. Grating structures show effects arising out of the confinement of quasiparticles while dot arrays show evidence of proximity induced superconductivity scaling as the density of dots. Superconducting dots deposited on narrow semiconductor channels show suppression of Andreev reflection which we attribute to interdot diffuse scattering from the walls of the channel.     

Antiresonance of electron tunneling through a quantum dot array

Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e²/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength.     

Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer

By a computer simulation we study the real space and energy distributions of 0D electrons bound in a planar array of quantum dots, including both intra-dot charging and inter-dot Coulomb interaction effects, size fluctuations, as well as the screening by a parallel gas of 2D electrons.It is demonstrated that the mutual Coulomb shifts between different dots cause pronounced many-body correlation effects and in-plane potential fluctuations, which can be significant for experiments such as capacitance and tunneling spectroscopy. In addition we investigate the influence of charged dot scattering on the mobility of a conducting channel parallel to the dot layer.     

Effect of topology on the transport properties of two interacting dots

The transport properties of a system of two interacting dots, one of them directly connected to the leads constituting a side-coupled configuration (SCD), are studied in the weak and strong tunnel-coupling limits. The conductance behavior of the SCD structure has new and richer physics than the better-studied system of two dots aligned with the leads (ACD). In the weak coupling regime and in the case of one electron per dot, the ACD configuration gives rise to two mostly independent Kondo states. In the SCD topology, the inserted dot is in a Kondo state while the side-connected one presents Coulomb blockade properties. Moreover, the dot spins change their behavior, from an antiferromagnetic coupling to a ferromagnetic correlation, as a consequence of the interaction with the conduction electrons. The system is governed by the Kondo effect related to the dot that is embedded into the leads. The role of the side-connected dot is to introduce, when at resonance, a new path for the electrons to go through giving rise to the interferences responsible for the suppression of the conductance. These results depend on the values of the intra-dot Coulomb interactions. In the case where the many-body interaction is restricted to the side-connected dot, its Kondo correlation is responsible for the scattering of the conduction electrons giving rise to the conductance suppression.Received: 7 February 2004, Published online: 24 September 2004PACS: 73.63.-b Electronic transport in nanoscale materials and structures - 73.63.Kv Quantum dots     

Crystallization and quantum melting of few electron system in a spherical quantum dot: quantum Monte Carlo simulation

Spherical quantum dots with a few charged Fermi particles (electrons or holes) are studied for different total spins. Simulation by quantum path integral Monte Carlo method is performed. The dependence of the electron correlations in the quantum dot is studied at different mean interelectron separation controlled by number of electrons in the quantum dot and by steepness of electron confinement (the latter parameter can be changed by the gate voltage). The ‘cold’ melting—quantum transition from Wigner crystal-like state (i.e. from regime of strongly correlated electrons) to a Fermi liquid-like state—driven by the steepness of electron confinement is studied. The pair correlation function and radial function characterizing electron quantum delocalization are analyzed.     

Γ<Subscript>8</Subscript>-band electron momentum relaxation involving a mixed-valence iron ion system,and electronic transport in HgSe: Fe at low temperatures

Specific features of Γ₈-band electron scattering on a spatially correlated mixed-valence iron ion system in HgSe: Fe crystals are investigated. The s-p hybridization and Bloch wave function amplitudes are taken into account in calculating the probability of electron scattering by mixed-valence iron ions. The relaxation time and mobility of Γ₈-band electrons in HgSe and HgSe: Fe at low temperatures are calculated, and the energy dependence of the electron relaxation time is analyzed. This dependence for Γ₈-band electrons is shown to change radically when mixed-valence iron ions are ordered in space.     

Temperature effect on spatial correlations of impurity ions in HgSe: Fe crystals

The spatial correlations in the arrangement of iron ions in HgSe: Fe compounds are described by the pair correlation function calculated within the hard sphere model. The temperature effect is taken into account by substituting the thermodynamic mean for the correlation sphere radius. The thermodynamic averaging is performed using the Einstein approach. The temperature dependences of the mobility of electrons scattered by a spatially correlated distribution of iron ions are calculated, and the results of these calculations are compared with the experimental data.     

Quantum coherence in quantum dot—Aharonov–Bohm ring hybrid systems

We investigate coherent transport through hybrid systems of quantum dots and Aharonov–Bohm (AB) rings. Strong coherence over the entire system leads to the Fano effect, which originates from the interference and the phase shift caused by the discrete states in the dots. The high controllability of the system parameters reveals that the Fano effect in mesoscopic transport can be a powerful tool for detecting the phase shift of electrons. We apply it to detect electrostatic phase modulation and the phase shift in a quantum wire with a side-coupled dot. Finally, we provide an experimental answer to the problem of “neighboring in-phase Coulomb peaks”.     

Role of dynamic depolarization for the intersubband resonance in the localization regime

We investigate the electronic intraband absorption in quantum wells with a strong lateral random potential, realized for example by modulation doping with a thin spacer layer. In such systems, electrons become in-plane localized in isolated potential minima and behave like an inhomogeneous array of natural quantum dots. When excited with a coherent light field, the dots respond as individual oscillators, which are however coupled by dynamic dipole–dipole interactions. The absorption spectrum is then determined by the interplay of the single dot properties (related to the disorder potential) and the many-particle Coulomb interactions. Using a simple model for the single-particle states, we calculate the absorption spectrum as a function of the electron density. In the case of light polarized perpendicular to the layer, we find with increasing density a dramatic line narrowing (associated with a collective excitation of the electrons) and a depolarization blue shift. For in-plane polarized light, the peak is shifted to the red. Our theory also applies to far-infrared absorption experiments in artificial quantum dot arrays.     

Spin excitations in few-electrons AlGaAs/GaAs quantum dots probed by inelastic light scattering

We present recent studies of electronic excitations in nanofabricated AlGaAs/GaAs semiconductor quantum dots (QDs) by resonant inelastic light scattering. The resonant light scattering spectra are dominated by excitations from parity-allowed inter-shell transitions between Fock–Darwin levels. In QDs with very few electrons the resonant spectra are characterized by distinct charge and spin excitations that reveal the strong impact of both exchange and correlation effects. A sharp inter-shell spin excitation of the triplet spin QD state with four electrons is identified.     

Quantum dots with even number of electrons: kondo effect in a finite magnetic field

We show that the Kondo effect can be induced by an external magnetic field in quantum dots with an even number of electrons. If the Zeeman energy B is close to the single-particle level spacing Delta in the dot, the scattering of the conduction electrons from the dot is dominated by an anisotropic exchange interaction. A Kondo resonance then occurs despite the fact that B exceeds by far the Kondo temperature T(K). As a result, at low temperatures T相似文献   

Investigations of backscattering peaks and of the nature of the confining potential in open quantum dots

The properties of open quantum dots are examined in magneto-transport. The quantum dots are prepared from a two-dimensional electron system (2DES) in AlGaAs/GaAs by lateral gate structures. These quantum dots are open, i.e. they are still connected to the surrounding 2DES regions. The low magnetic field magnetoresistance shows peak structures. These structures can be related to semi-classical ballistic trajectories in the confining potential of a dot. The calculations of different confining potentials (abrupt “hard-wall” and parabolic “soft-wall”) are compared with the experimental results. The experiments are better described by a soft-wall potential.     

Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots

We explore the Coulomb binding of electrons to holes confined to type-II GaSb self-assembled quantum dots. We demonstrate that at low laser power electrons are more weakly bound to holes trapped by the dots than to holes in the wetting layer. On the other hand, at high laser power the hydrogenic binding energy of dot excitons increases by more than a factor of two, and so exceeds that of wetting layer excitons. We attribute this to the strong binding of ‘core’ electrons to dots that are highly charged with holes by optical pumping.     

Density of states in the impurity d band and inelastic electron scattering by a system of mixed-valence iron ions in HgSe: Fe crystals

The resistivity and the Hall coefficient of HgSe: Fe crystals with various iron content are experimentally studied in the temperature range 1.3≤T≤300 K and in magnetic fields up to 60 kOe. The temperature dependences of the density and mobility of conduction electrons in these crystals are determined. The influence of spatial charge ordering in the system of mixed-valence iron ions on impurity states in HgSe: Fe crystals is considered. The density of states in the impurity d band is theoretically analyzed, and inelastic electron scattering in which bi-and trivalent iron ions are recharged is discussed. It is shown that the experimentally detected features in the dependence of the density and mobility of electrons on temperature and iron impurity content can be explained by the influence of Coulomb correlations in the mixed-valence iron ion system on the structure of the impurity d band.

     

Millisecond fluorescence in InAs quantum dots embedded in AlAs

The temperature dependence of steady-state and time-resolved photoluminescence from self-assembled InAs quantum dots embedded in AlAs has been studied. Millisecond-long nonexponential photoluminescence decay is observed in the temperature range of 4.2–50 K. At higher temperatures, the decay time decreases to a few nanoseconds. The experimental results are interpreted using a model of singlet–triplet splitting of exciton levels in small dots in a dense quantum dot system with local carrier transfer between dots.     

Ultrafast carrier dynamics of resonantly excited InAs/GaAs self-assembled quantum dots

We study theoretically the time development of electronic relaxation in quantum dots. We consider the process of relaxation of the state with an electron prepared at the beginning of relaxation in the electronic ground state. We obtain a fast (in picoseconds) increase of electronic population in the excited state. Also, we consider the process of relaxation of an electron from an excited state in the dot. Here we obtain an incomplete depopulation of the electron from the excited state. We compare these results to experiments in which a fast decrease of luminescence is reported during the first period of relaxation after resonant excitation of the ground state. We estimate numerically the role of electron–LO–phonon (Fröhlich's coupling) mechanism in these processes. We show that this effect may be attributed to the influence of multiple scattering of quantum dot electrons on LO phonons. A single-electron two-energy-level quantum dot model is used to demonstrate this effect in an isolated semiconductor quantum dot.     

Study on the coupled multiple nanocrystal quantum-dot system

We have studied excess electron filling rule in the coupled multiple nanocrystal quantum-dot systems, i.e. quantum chain and quantum pattern, by the unrestricted Hartree–Fock–Roothaan method. Assuming each quantum dot of quantum pattern to be confined in a three-dimensional spherical potential well of finite depth, we have studied the intradot and interdot electron Coulomb and exchange interactions. By varying the center distance d between the coupled quantum dots, the transition from the strong- to weak-coupling situation is realized. For the systems in question, our results show that, with the filling of excess electrons into the quantum pattern, the corresponding chemical potentials form quasi-band structure, which is similar to the energy-band structure of crystal material. In each chemical-potential band of quantum pattern, the number of chemical-potential curves is equal to the number of quantum dots, and the distributions of them depend strongly on the quantum-dot arrangement structure of quantum pattern.     

Delocalization energy probed by asymmetry of Coulomb diamond in double dot system

We present results of measurements of the I–V characteristics of a unique parallel double dot where the current flows vertically but the coupling is lateral. Probed by asymmetry of Coulomb diamonds in the standard double-dot honeycomb stability diagram, we are able to discern in what sequence electrons are added in the two dots.     

Electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

We present atomistic theory of electronic and optical properties of a single InAs quantum dot grown on a pyramidal InP nanotemplate. The shape and size of the dot is assumed to follow the nanotemplate shape and size. The electron and valence hole single particle states are calculated using atomistic effective–bond–orbital model with second nearest-neighbor interactions. The electronic calculations are coupled to separately calculated strain distribution via Bir–Pikus Hamiltonian. The optical properties of InAs dots embedded in InP pyramids are calculated by solving the many-exciton Hamiltonian for interacting electron and hole complexes using the configuration–interaction method. The effect of quantum-dot geometry on the optical spectra is investigated by a comparison between dots of different shapes.