Structure evolution along the yrast-line in 101pd

High-spin states in 101Pd have been investigated experimentally via the 76Ge(28Si,3nγ)101Pd reaction.The previously known bands based on the d5/2 and h11/2 neutron orbitals have been extended to higher-spin states,and two new structures have been observed.Spin and parity were assigned to the levels on the basis of the experimental results of the angular distribution of γ rays deexciting the oriented states.For the ground-state band,the E-GOS(E-Gamma Over Spin) curve strongly suggests a structure transition from vibration to rotation while increasing spin.     

Electric-dipole transitions in ^165Er

High-spin states of ^165Er were studied using the ^160Gd（^9Be, 4n）reaction at beam energies of 42 and 45 MeV. The previously known bands based on the ν5/2^-[523] and ν5/2^＋[642] configurations have been extended to high-spin states. Electric-dipole transitions linking these two opposite parity bands were observed. Relatively large B（E1） values have been extracted experimentally and were attributed to octupole softness.     

Dipole bands in nucleus ^139Pm

High-spin states in nucleus ^139Pm have been studied using the reaction ^116Cd（^27Al, 4n）^139Pm. Two dipole cascades have been found. Spin and parity assignments were based on the Directional Correlation of Oriented Nuclei （DCO） ratios and systematic behavior in neighboring odd-proton nuclei. The level structures of ^139Pm are compared with those of the N = 78 isotone ^141Eu in which two dipole bands have been confirmed as magnetic rotational bands. The close similarity between them suggests that the dipole bands in ^139Pm may be magnetic rotational bands.     

Observation of High-j Two-Quasiparticle Bands in Odd-Odd ^174Re

High spin states in ^174Re have been investigated via the ^152Sm （^27 Al, 5nγ） ^174Re reaction. Gamma-ray excitation functions, x-γ and γ-γ coincidences have been measured. Two rotational bands built on the πh9/2 × vi13/2 and πh11/2 × vi13/2 configurations have been identified and extended up to high-spin states. The relative spin and parity of the band levels have been unambiguously fixed due to observations of several inter-band transitions. Both the bands show the low-spin signature inversion, which is consistent with systematic expectations for the high-j two-quasiparticle bands in the A = 170 mass region.     

Potential energy curves and analytical potential energy functions of the metastable states of B2^＋＋

The multi-reference configuration interaction method and aug-cc-pvqz （AVQZ） have been used to calculate potential energy curves （PECs） of the singlet and triplet states of the riu and rig symmetry of B2＋＋. All of the four states （^l∏u, ^1∏g, ^3∏u and ^3∏g） are found to be metastable states, though the potential well of ^3∏u symmetry is very shallow. Based on the PECs, the analytical potential energy functions （APEFs） of these states have been fitted using the least square fitting method and two models of function. The spectroscopic parameters of each state are also calculated, and are compared with other investigations in the literature. The credibility and veracity of the two functions are evaluated. Some ideas to improve the fitting accuracy are presented. Also the vibrational levels for each state are predicted by solving the SchrSdinger equation of nuclear motion.     

Structure and stability of various states of the EuC and EuC2 molecules

B3LYP level density functional theory （DFT） and multiconfiguration self-consistent-field （MCSCF） level ab initio method calculations have been performed on the basis of relativistic effective core potentials to investigate the nature of EuC and EuC2 molecules. The computed results indicate that the ground states of EuC and EuC2 are ^12∑^＋ and SA2, respectively. Dissociation potential energy curves of the low-lying electronic states of EuC have been calculated using the MCSCF method, and the same level calculation on EuC2 indicates that the dissociation energy of EuC2 of ground state compares well with the available experimental data. The bond characteristic is also discussed using Mulliken populations.     

Structure of the πg7／2[404]7／2^＋ Band in Odd Proton Nucleus ^123I

High spin states of the odd proton nucleus ^123I have been populated in the reaction ^116Cd(^14N, 5n2p) at a beamenergy of 65 MeV. Two previously known positive-parity △I = 2 sequences have been extended up to 31/2^ and41/2^ . In addition, a number of △I = 1 transitions linking the two △I = 2 sequences have been observed. It issuggested that both the △I = 2 sequences are built upon the oblate πg7/2[404]7/2^ Nilsson configuration.     

Study of the νi13/2－1 band in 189Pt

High-spin levels of ^189Pt have been studied with the in-beam T-spectroscopy method via the ^176Yb（^18O,5n） reaction at the beam energies of 88 and 95 MeV. The previously known ＂vi-1 13/2 band has been confirmed, and its unfavored signature branch extended up to the 31/2^＋ state. Within the framework of the triaxial particle-rotor model, the vi-1 13/2 band is suggested to be associated with the 11/2[615] configuration, and to have triaxial deformation.     

B（E2） value of even-even ^108-112Pd isotopes by interacting boson model-1

This work studies the systematic reduced transition probabilities B（E2）↓, intrinsic quadrupole moments and deformation parameters of Pd isotopes with even neutrons from N =62 to 66. The downward reduced transition probabilities B（E2）↓from gamma transition 8^＋to 6^＋, 6^＋ to 4^＋, 4^＋ to 2^＋ and 2^＋ to 0＋states of even-even108 112Pd isotopes were calculated by the Interacting Boson Model（IBM-1） and compared with the available previous experimental results. The ratio of the excitation energies of the first 4＋and the first 2＋excited states, R4/2, is also studied for the classification of symmetry of these nuclei. Furthermore we have studied systematically the transition rate R = B（E2： L＋ →（L 2）＋）/B（E2 ： 2＋ →0＋） of some of the low-lying quadrupole collective states in comparison with the available experimental data. The associated quadrupole moments and deformation parameters have been calculated. The results of this calculation are in good agreement with the corresponding available experimental data. The108 112Pd isotopes show the O（6） symmetry.     

Band Structures of the Nucleus 129Cs

High-spin states in ^129Cs are populated via the ^122Sn （^11B, 4n） reaction at beam energies of 55 and 60MeV. Two additional bands are placed in the level scheme and the previously known bands are extended to higher spins. The results are compared to the cranked shell model calculations and to the systematics of the adjacent Cs isotpoes. One of the new bands is interpreted as the 7-vibrational band built on the πh11/2 orbital. The possible configuration for another new band is discussed. Upbend caused by （Vh11/2）^2 alignment is observed both in the favored and unfavored sequences of the πh11/2 configuration. The band based on the πgτ/2 configuration at low spins forks around spin 17//2, and the two different S-bands are attributed to （Vh11/2）^2 and （πh11/2）^2 rotational alignments, respectively.     

Shape phase transition in neutron-rich even-even light nuclei with Z=20-28

The E-Gamma Over Spin (E-GOS) analysis method is applied to the study of the shape phase transition of neutron-rich even-even light nuclei with Z=20-28. Some valuable results are gained through analysing E-GOS curves of Ca, Ti, Cr, Fe and Ni nuclei.     

Evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistors by structure function method＊

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

A Complex Higher-Dimensional Lie Algebra with Real and Imaginary Structure Constants as Well as Its Decomposition

A new Lie algebra G of the Lie algebra sl（2） is constructed with complex entries whose structure constants are real and imaginary numbers. A loop algebra G corresponding to the Lie algebra G is constructed, for which it is devoted to generating a soliton hierarchy of evolution equations under the framework of generalized zero curvature equation which is derived from the compatibility of the isospectral problems expressed by Hirota operators. Finally, we decompose the Lie algebra G to obtain the subalgebras G1 and G2. Using the G2 and its one type of loop algebra G2, a Liouville integrable soliton hierarchy is obtained, furthermore, we obtain its bi-Hamiltonian structure by employing the quadratic-form identity.     

Global Structure Stability of Riemann Solution of Quasilinear Hyperbolic System of Conservation Law in Presence of Boundary： Shocks and Contact Discontinuities

In this paper, we investigate a class of mixed initial-boundary value problems for a kind of n × n quasilinear hyperbolic systems of conservation laws on the quarter plan. We show that the structure of the pieeewise C^1 solution u = u（t, x） of the problem, which can be regarded as a perturbation of the corresponding Riemann problem, is globally similar to that of the solution u = U（x/t） of the corresponding Riemann problem. The piecewise C^1 solution u = u（t, x） to this kind of problems is globally structure-stable if and only if it contains only non-degenerate shocks and contact discontinuities, but no rarefaction waves and other weak discontinuities.     

Studies on an S-band bunching system with hybrid buncher

Generally, a standard bunching system is composed by an SW pre-buncher, a TW buncher and a standard accelerating section. However, there is one way to simplify the whole system to some extent by using the hybrid buncher, which is a combined structure of the SW pre-buncher and the TW buncher. Here the beam dynamics studies on an S-band bunching system with the hybrid buncher is presented, and simulation results show that similar beam performance can be obtained at the linac exit by using this kind of bunching system rather than the standard one. In the meantime, the structure design of the hybrid buncher is also described. Furthermore, the standard accelerating section can also be integrated with the hybrid buncher, which can further simplify the usual bunching system and lower the construction cost.     

Theoretical XANES spectra for C76 isomers

Two isolated pentagon rule satisfying isomers of C76 are optimized. And 1（D2） isomer is reconfirmed to be the relative more stable one. The X-ray absorption near-edge structure （XANES） spectra are theoretically characterized by the hybrid density functional theory （DFT） method in combination with the full core-hole potentials. Isomer identification of XANES spectra for Cr6 is found and XANES spectra dependence on local structure of fullerene is discussed.     

Electronic Structure Analysis of USiO4

Uranium is a member of Actinides and plays important role in nuclear science and technology. Electronic and structural investigations of actinide compounds attract major interest in science. The electronic structure and chemical bonding of coffinite USiO4 are investigated by X-ray Absorption Fine Structure spectroscopy （XAFS）. U L3- edge absorption spectrum in USiO4 is compared with U L3-edge spectra in UO2 and UTe due to their different electronic and chemical structures. The study presents XANES （x-ray Absorption Near-Edge Structure） and Extended XAFS （EXAFS） calculations of USiO4 thin films. The full multiple scattering approach has been applied to the calculation of U L3 edge XANES spectra of USiO4, UO2 and UTe, based on different choices of one electron potentials according to Uranium coordinations by using the real space multiple scattering method FEFF 8.2 code.     

Physical Properties of III-Antiminodes -- a First Principles Study

A comprehensive first principles study of III-Antimonide binary compounds is hardly found in literature. We report a broad study of structural and electronic properties of boron antimonide （BSb）, aluminium antimonide （AlSb）, gallium antimonide （GaSb） and indium antimonide （InSb） in zineblende phase based on density functional theory （DFT）. Our calculations are based on Full-PotentiM Lineaxized Augmented Plane wave plus local orbitals （FP- L（APWq-lo）） method. Different forms of exchange-correlation energy functional and corresponding potential are employed for structural and electronic properties. Our computed results for lattice parameters, bulk moduli, their pressure derivatives, and cohesive energy are consistent with the available experimental data. Boron antimonide is found to be the hardest compound of this group. For band structure calculations, in addition to LDA and GGA, we used GGA-EV, an approximation employed by Engel and Vosko. The band gap results with GGA-EV are of significant improvement over the earlier work.     

A new gaseous detector — micro mesh gaseous structure

The structure and working principle of Micromegas （MICRO Mesh Gaseous Structure） is discussed. Some radiation sources of α and X rays are used to test this detector. The optimized electric-field intensity of the conversion gap is obtained. The transmission of electrons and the uniformity of the amplification gap are also presented. The energy resolution of the 5.9 keV peak is better than 27%.     

Structure distortion,optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl 3 to SbCl 3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550°C for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10 8 , 3.26×10 8 , 5.23×10 8 , and 6.97×10 8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.