Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser

Silicon doping into GaAs has been performed with the combination of pulsed XeCl excimer laser (wavelength: 308 nm) and silane gas (SiH₄). Sheet resistances and depth profiles of the Si-doped GaAs as the functions of laser fluence, the number of laser pulses and gas pressure have been measured in order to make clear the relation between properties of doped GaAs and irradiation conditions. The secondary ion mass spectroscopy (SIMS) has revealed that the depth of Si in GaAs is limited in such a very shallow region (30–110 nm) that might be controlled easily by irradiation conditions. The efficiency for carrier generation of Si in GaAs with laser fluence is discussed.     

Novel mid-IR laser based on hybrid AlGaAsSb/InAs/CdMgSe heterostructure

We report on the development of a novel design of a mid-IR laser combining III–V and II–VI compounds in a “hybrid” double heterostructure. It possesses large (1.5 eV) potential barriers both for injected electrons and holes, suppressing their leakage from the active region, and provides strong optical confinement. An AlGaAsSb/InAs/CdMgSe laser diode with a III–V/II–VI heterovalent interface at the 0.6 μm-InAs active region has been grown by molecular beam epitaxy on an InAs substrate. Despite a far from optimal defect density at the CdMgSe/InAs interface and high losses inherent for bulk active region of the laser, the structure demonstrates lasing at 2.8 μm (up to 100 K) in the pulsed regime with a threshold current density of 3–4 kA/cm². Type II InSb monolayer insertions into an InAs layer show bright photoluminescence at 3.8 μm (77 K), confirming the great potential of the InAs-based nanostructure active region for longer wavelength applications.     

Mechanism of silicon implant-deposition for surface modification of stainless steel 304 using KrF-excimer laser

Simultaneous implantation and deposition of Si by KrF-excimer-laser (248 nm) irradiation in an ambient silane (SiH₄) gas realize the surface modification of stainless steel (SUS) 304 at room temperature. This process is referred to as the Laser Implant-Deposition (LID). Depth profiles of Si concentration in the modified layers and the total quantities of supplied Si (Si dose) are analyzed by Rurtherford Backscattering Spectroscopy (RBS) measurements. The Si supply mechanism of LID is discussed with variations of the Si dose as a function of laser fluence, gas pressure, and the number of laser pulses. The calculation of temperature along the depth during the LID process suggests that the Si atoms diffuse into the SUS304 in a liquid phase. Fitting of the calculated depth profile to the experimental data, using the interdiffusion theory, gives an interdiffusion coefficient between Si and SUS304 as high as 2.8×10^–6 cm²/s. A simplified model for simulation, by which well agreed depth profiles of Si can be simulated for various experimental conditions, is proposed.     

Electrical behaviour of laser-damaged silicon photodiodes

A measurement of the electrical parameters degradation of Si photodiodes irradiated by laser visible light has been performed. The laser is a Q-switched Nd:YAG, frequency doubled, operated in single pulse mode of 4 ns duration. The applied fluence levels range up to 90 J/cm². Two kinds of irradiation process were applied: either a part of the detector active area was irradiated in single pulse mode, or a scanning of the whole detector active area was performed with successive identical pulses. It has been shown that the fluence necessary to induce significant changes (local decrease of 35%) in responsivity is several times the surface melting threshold fluence (0.5 J/cm²). Conversely, the dark current is the most sensitive parameter, increasing by about four times for high irradiation. The in-depth dopant distribution is altered by high fluence irradiation in a way that cannot be explained by simple thermal modelling.     

Laser plasma monitored by silicon carbide detectors

The excellent physical and chemical properties and the radiation hardness of silicon carbide (SiC) render this material particularly suitable for the realization of radiation detectors. In this paper we describe the main properties of SiC and the processes needed to realize good performance detectors. To this purpose, we made SiC Schottky diodes that were electrical characterized by using different techniques. In order to test the radiation hardness, the diodes were irradiated with different ion beams and the analysis of the electrical measurements allowed to identify the defects responsible of the device degradation. These detectors have been used to monitor the multi-MeV ions of the plasma emitted by irradiation of various targets with 300-ps laser at high intensity (10¹⁶?W/cm²). These measurements highlighted that the use of SiC detectors enhances the sensitivity to ions detection due to the cutting of the visible and soft ultraviolet radiation emitted from plasma. The small rise time and the proportionality to ion energy evidence that these detectors are a powerful tool for the characterization of ion generated by high-intensity pulsed laser.     

Ash characteristics in controlled diode laser pyrolysis of chlorinated rubber

This paper describes the effects of 60 W High Power Diode Laser (HPDL) beams on the removal of chlorinated rubber (CR) paint from concrete surfaces and the ash particles generated from this process. The physical characteristics, including shape and size distribution of the removed and collected airborne CR particles, down to a size of around 1 μm in diameter, were determined using optical microscopy and image analysis. The shape of the particles observed was highly irregular, displaying no symmetry. The size distribution of the collected particles was found to range between 1–2000 μm, with the maximum concentration being found between 29 and 60 μm. The chemical characteristics of the CR ash particles were investigated by means of ESEM and EDX techniques. From a comparative analysis, it was found that the concentration of chlorine within the CR material was significantly reduced after HPDL treatment. This, together with DTA/TGA results indicated a combustive degradation of the CR polymer through the interaction with the process gas, oxygen, and the laser irradiation. Also, a strong correlation between laser power and average particle sizes has been found, with higher powers generally producing larger particle sizes. Opposite effects have been found by changing the oxygen flow rate, with higher oxygen flow producing, on average, smaller particles. An interpretation of the combustion process, as well as a brief discussion on operational safety and environmental impact of the products is attempted.     

Excimer-laser etching on silicon

Studies have been made of poly- and single Si etching induced by excimer-laser irradiation of the silicon surfaces in halogenated gases. Etching was investigated for different conduction types, impurity concentrations and crystallographic planes. Chlorine atoms accept electrons generated in photoexcited, undoped p-type Si, thus becoming negative ions which are pulled into the Si. However, the n⁺-type Si is etched spontaneously by Cl^– as a result of the availability of conduction electrons. Fluorine atoms, with the highest electronegativity, take in electrons independent of whether the material is n- or p-type. And thus, the easy F^– ion penetration into Si causes spontaneous etching in both types. New anisotropic etching for n⁺ poly-Si is investigated because of its importance to microfabrication technology. Methyl methacrylate (MMA) gas, which reacts with Cl atoms, produces a deposition film on the n⁺ poly-Si surface. The surface, from which the film is removed by KrF (5 eV) laser irradiation, is etched by Cl atoms, while the film remains on the side wall to protect undercutting. However, with the higher photon energy for the ArF (6.4 eV) laser, the Si-OH bonds are broken and electron traps are formed. These electrontrapping centers are easily annealed out in comparison to the plasma-induced centers. Pattern transfer etching for n⁺ poly-Si has been realized using reflective optics. The problems involved in obtaining finer resolution etching are discussed.     

Manufacturing of nanoscale thickness gold lines by laser curing of a discretely deposited nanoparticle suspension

The present work is focused on a novel method for the manufacturing of electric microconductors for semiconductors and other devices. Three different technologies are combined in this technique: controlled (drop on demand) printing, laser curing, and the employment of nanoparticles of matter, possessing markedly different properties (here, melting point) than their bulk counterparts. A modified on demand ink jet process is utilized to print electrically conducting line patterns from a suspension of gold nanoparticles in toluene. Microdroplets of 60–100 μm diameter are generated and deposited on a moving substrate such that the droplets form continuous lines. Focused laser irradiation is utilized in order to evaporate the solvent, melt the metal nanoparticles in the suspension, and sinter the suspended particles to form continuous, electrically conducting gold microlines on a substrate. The ultrafine particles in the suspension have a diameter size range of 2–5 nm. Due to curvature and surface effects of such small particles, the melting point is markedly lower than that of bulk gold (1063 C). Atomic force microscopy and scanning electron microscopy have been employed to investigate the topology of the cured line. In situ visualization of the curing process has been conducted. Results on the effect of the laser irradiation power on the topology and width of the cured line, which is directly related to the electrical conductivity, are reported.     

The application of ultrasound radiation to the synthesis of nanocrystalline metal oxide in a non-aqueous solvent

Highly crystalline metal oxide nanoparticles of TiO₂, WO₃, and V₂O₅ were synthesized in just a few minutes by reacting transition metal chloride with benzyl alcohol using ultrasonic irradiation under argon atmosphere in a non-aqueous solvent. The sonochemical process was conducted at a relatively low temperature, 363 K. A unique crystallization process of these nanoparticles has been observed and characterized by powder X-ray diffraction (PXRD), high resolution scanning electron microscopy (HRSEM), and BET. The particles’ size and shape measured from HRSEM reveal “quasi” zero-dimensional, spherical TiO₂ particles in the range of 3–7 nm. The V₂O₅ particles have a “quasi” one-dimensional ellipsoidal morphology, with lengths in the range of 150–200 nm and widths varying between 40 and 60 nm. The WO₃ particles were obtained as “quasi” two-dimensional platelets with square shapes having facets ranging from 30 to 50 nm. The thickness of these platelets was between 2 and 7 nm. The mechanism of the reactions leading to these three metal oxide nanoparticles in a non-aqueous system is substantiated by Nuclear Magnetic Resonance (NMR), and Electron Spin Resonance (ESR).     

Processing of W/Si and Si/W bilayers and multilayers with single and multiple excimer-laser pulses

Interdiffusion phenomena, thermal damage and ablation of W/Si and Si/W bilayers and multilayers under XeCl-excimer laser (=308 nm) irradiation at fluences of 0.15, 0.3 and 0.6 J/cm² were studied. Samples were prepared by UHV e-beam evaporation onto oxidized Si. The thickness of W and Si layers and the total thickness of the structures were 1–20 nm and 40–100 nm, respectively. 1 to 300 laser pulses were directed to the same irradiation site. At 0.6 J/cm² the samples were damaged even by a single laser pulse. At 0.3 J/cm² WSi₂ silicide formation, surface roughening and ablation were observed. The threshold for significant changes depends on the number of pulses: it was between 3–10 pulses and 10–30 pulses for bilayers with W and Si surfaces, respectively, and more than 100 pulses for multilayers with the same total thickness of tungsten. At 0.15 J/cm² the periodicity of the multilayers was preserved. Temperature profiles in layered structures were obtained by numerical simulations. The observed differences of the resistance of various bilayers and multilayers against UV irradiation are discussed.     

An “instantaneous” distribution of the ionization-passive electrons and holes under irradiation of a dielectric by intense electron or laser beams

A method is worked out for calculation of an “instantaneous” energy distribution of the ionization-passive electrons and holes resulting from the electron-electron collisions before the onset of electron-phonon relaxation under 10⁻¹⁵–10⁻¹⁴ s irradiation of a dielectric by an intense electron or laser beam. The method is based on the solution of a system of integral-differential kinetic equations of general form. The Auger and impact ionization as well as hole recoil due to the momentum conservation law are taken into account in calculations. The “instantaneous” distribution is calculated in NaCl under irradiation of the sample by a high-density electron beam. The “instantaneous” distribution of ionization-passive electrons and holes is the initial one in solutions of all kinetic equations describing further relaxation of electron excitations in irradiated materials.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 15–22, November, 2004.     

Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion method

A process methodology has been adopted to bond GaN thin films to Si(100) substrates using the combination of laser lift-off and direct wafer fusion. Using optimum excimer laser conditions, 2–10 μm of GaN is lifted-off from sapphire. The lifted-off thin film is cleared from gallium residual and then suitably treated in a hydrofluoric, nitric and acetic acid mixture to render the surface hydrophilic. This treatment provides van der Waals bonds to immediately contact bond with SiO₂–Si(100) substrate at room temperature. The bonds are further strengthened by a high temperature annealing at 650 C for 2 h. The structural and mechanical characteristics of the bonded structure reveal uniform and high quality bonding. The optical characteristics of the transferred bonded film on SiO₂–Si(100) substrate exhibit similar properties to that of GaN on sapphire. In a similar manner, high-brightness blue LEDs were transferred from sapphire to SiO₂–Si(100) substrate with no deterioration in the electrical and optical performance of the device.     

Experimental study of flame stabilization in low Reynolds and Dean number flows in curved mesoscale ducts

Flame stabilization during non-premixed combustion in curved ducts with a diameter of the order of magnitude of the premixed flame thickness of the reactants was investigated experimentally, since it has been established that this is a configuration with potential advantages in the context of “micro”-combustion. It was shown that, in such “mesoscale” tubes, a stable flame oscillation including extinction/re-ignition phenomena can be established for steady boundary conditions. These oscillations lead, under appropriate conditions, to sound emission in the 50–350 Hz range. This was a mode of stabilization in addition to the “classical” steady flamelet, stabilized through thermal losses to the duct walls at higher values of the Reynolds number. Curvature of the duct was shown to have minimal effect on reactant mixing, which was diffusion-controlled, but significantly affected flame thickness and stabilization. To probe the fuel-oxidizer mixing in the U-shaped, optically accessible tubes, laser induced fluorescence of acetone fuel dopant was used, and the flame structure was studied using OH PLIF. The various stabilization regimes are discussed in terms of the Reynolds and Dean numbers of the tube flow.     

Acceleration and mitigation of carrier‐induced degradation in p‐type multi‐crystalline silicon

Recently, a new carrier‐induced defect has been reported in multi‐crystalline silicon (mc‐Si), and has been shown to be particularly detrimental to the performance of passivated emitter and rear contact (PERC) cells. Under normal conditions, this defect can take years to fully form. This Letter reports on the accelerated formation and subsequent passivation of this carrier‐induced defect through the use of high illumination intensity and elevated temperatures resulting in passivation within minutes. The process was tested on industrial mc‐Si PERC solar cells, where degradation after a 100 hour stability test was suppressed to only 0.1% absolute compared to 2.1% for non‐treated cells. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Laser irradiation of chemisorbed oxygen on Si(111): Electronic states and clump formation of SiO2

The laser annealed Si(111) 1×1 surface with chemisorbed oxygen at submonolayer coverages and its irradiation with a ruby laser has been studied with ultraviolet photoelectron spectroscopy and high-resolution electron-energy-loss spectroscopy. The surface oxide which forms directly upon O₂ exposure is found to be similar to that which forms on the Si(111) cleaved 2×1 and the 7×7 reconstructed surfaces. Ruby-laser irradiation converts this surface oxide at submonolayer coverages into clumps of silicon dioxide and regions of clean silicon. Both surface oxides show electronic transitions in the visible and ultraviolet energy region which may be related to known network and point defects in vitreous and crystalline silicon dioxide.     

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

Si quantum dots (QDs) embedded in SiO₂ can be normally prepared by thermal annealing of SiO_x (x < 2) thin film at 1100 °C in an inert gas atmosphere. In this work, the SiO_x thin film was firstly subjected to a rapid irradiation of CO₂ laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100 °C for 1 h as usual. The photoluminescence (PL) intensity of Si QD was found to be enhanced after such pre-annealing treatment. This PL enhancement is not due to the additional thermal budget offered by laser for phase separation, but attributed to the production of extra nucleation sites for Si dots within SiO_x by laser irradiation, which facilitates the formation of extra Si QDs during the subsequent thermal annealing.     

Selective removal and patterning of a Co/Cu/Co trilayer created by femtosecond laser processing

The selective removal and patterning of a typical pseudo-spin-valve structure, consisting of a Co(20 nm)/ Cu(6 nm)/Co(3 nm) trilayer, by femtosecond laser has been examined in terms of irradiation parameters and layer structure. Ablation thresholds of the individual Co and Cu thin films and the SiO₂/Si substrate have been measured for single-shot irradiation with a 200 femtosecond (fs) laser pulses of a Ti:sapphire laser operating at 775 nm. Ablation of the entire trilayer structure was characterized by a sequential removal of the layers at a threshold level of fluence of 0.28 J/cm². Atomic Force Microscopy, optical microscopy, profilometry and Sputtered Neutral Mass Spectroscopy were employed to characterize the laser-induced single-shot laser selective removal and patterned areas. As a result, two phenomena were found to characterize the laser process: (i) selective removal of the Co and Cu layer due to the change of the laser fluence and (ii) regular pillars’ area of Co/Cu/Co could be achieved in a regular manner with the lowest pillar width size of 1.5 μm. Ablation through the layers was accompanied by the formation of bulges at the edges of the pillars, which was the biggest inconvenience in lowering the pillar size through the femtosecond laser process.     

Direct writing of micro/nano-scale patterns by means of particle lens arrays scanned by a focused diode pumped Nd:YVO4 laser

A practical approach to a well-known technique of laser micro/nano-patterning by optical near fields is presented. It is based on surface patterning by scanning a Gaussian laser beam through a self-assembled monolayer of silica micro-spheres on a single-crystalline silicon (Si) substrate. So far, the outcome of this kind of near-field patterning has been related to the simultaneous, parallel surface-structuring of large areas either by top hat or Gaussian laser intensity distributions. We attempt to explore the possibility of using the same technique in order to produce single, direct writing of features. This could be of advantage for applications in which only some areas need to be patterned (i.e. local area selective patterning) or single lines are required (e.g. a particular micro/nano-fluidic channel). A diode pumped Nd:YVO₄ laser system (wavelength of 532 nm, pulse duration of 8 ns, repetition rate of 30 kHz) with a computer-controlled 3 axis galvanometer beam scanner was employed to write user-defined patterns through the particle lens array on the Si substrate. After laser irradiation, the obtained patterns which are in the micro-scale were composed of sub-micro/micro-holes or bumps. The micro-pattern resolution depends on the dimension of both the micro-sphere’s diameter and the beam’s spot size. The developed technique could potentially be employed to fabricate photonic crystal structures mimicking nature’s butterfly wings and anti-reflective “moth eye” arrays for photovoltaic cells.     

Pulsed laser deposition vs. matrix assisted pulsed laser evaporation for growth of biodegradable polymer thin films

Thin films of poly (lactide-co-glycolide) (PLGA), a biodegradable polymer, were deposited on Si wafers by both conventional pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) using chloroform (CHCl₃) as a matrix solvent. This research represents an initial study to investigate the deposition characteristics of each technique at comparable conditions to gain insight into the transport and degradation mechanisms of each approach. The deposited materials were characterized by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), proton nuclear magnetic resonance (¹H NMR), and gel permeation chromatography (GPC) with refractive index (RI) detection. While FTIR and NMR results do not show a measurable departure from the native, in sharp contrast GPC results show a significant change (up to 95%) in molecular weight for both deposition methods. This result makes it clear that it is possible to overlook substantial degradation when incomplete chemical analysis is conducted.Optical transmission measurements of the starting MAPLE targets yielded laser penetration depths on the order of 0.362 cm and 0.209 cm for pure CHCl₃ and 1 wt. % PLGA in CHCl₃, respectively. Straightforward application of the Beer–Lambert law for laser energy deposition predicts a negligible temperature rise of less than 1 K at the target surface, which is in clear contradiction with ablation rates of 1.85 μm/pulse experimentally measured for polymer loaded samples. With an ablation process of this magnitude, the material ejection is likely due to contributions of nonlinear or non-homogeneous laser light absorption rather than evaporation. Severe non-uniformity of the final surface morphologies of the MAPLE films, similar to solvent wicking artifacts found in spin casting supports the spallation scenario in MAPLE. PACS 81.15.Fg; 79.20.Ds; 78.66.Qn; 42.70Jk     

Low-temperature laser processes for synthesizing (100)-textured Pb(Zr,Ti)O3 thin films on Si substrate

High-performance Pb(Zr,Ti)O₃, PZT, thin films were synthesized on Si substrates by using low-temperature laser-assisted processes, which combine pulsed laser deposition (PLD), laser lift-off (LLO) and laser-annealing (LA) processes. The PZT films were first grown on sapphire substrates at 400 °C, using Ba(Mg_1/3Ta_2/3)O₃, BMT, as seeding layer, by the PLD process, and were then transferred to Si substrates at room temperature by a LLO transferring process. Utilization of the BMT layer is of critical importance in those processes, since it acted as a nucleation layer for the synthesis of the PZT thin films on the sapphire substrates and, at the same time, served as a sacrificial layer during laser irradiation in the LLO process. After the LLO process, the surfaces of the PZT films were recovered by the LA process for removing the damage induced by the LLO process. A thin BMT (∼30 nm) layer is randomly oriented, resulting in non-textured PZT films with good ferroelectric properties, viz. P_r=20.6 μC/cm² and E_c=126 kV/cm, whereas a thick BMT (∼100 nm) layer is (100) preferentially oriented, leading to (100)-textured PZT films with markedly better ferroelectric properties, viz. P_r=34.4 μC/cm² and E_c=360 kV/cm. PACS 81.15.Fg; 77.84.-s