Atomic and electronic structure of group-IV adsorbates on the GaAs(0 0 1)-(1 × 2) surface

Ab initio calculations, based on pseudopotentials and density functional theory, have been performed to investigate the atomic and electronic structure of the group-IV adsorbates (C, Si, Ge, Sn, and Pb) on the GaAs(0 0 1)-(1 × 2) surface considered in two different models: (i) non-segregated Ga-IV-capped structure and (ii) segregated structure in which the group-IV atoms occupying the second layer while the As atom floats to the surface. The non-segregated structure is energetically more favorable than the segregated structure for Sn and Pb, whereas it is the other way around for C, Si, and Ge.     

Formation of a √3 × √3 surface on Si/Ge(1 1 1) studied by STM and LEED

We have performed a detailed study of the formation and the atomic structure of a √3 × √3 surface on Si/Ge(1 1 1) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a √3 × √3 periodicity but unlike the Sn/Ge(1 1 1) and the Sn/Si(1 1 1) surfaces, the Si/Ge(1 1 1) surface is not well ordered. There is no long range order on the surface and the √3 × √3 reconstruction is made up of double rows of silicon atoms separated by disordered areas composed of germanium atoms.     

The origin of inter-dimer-row correlated adsorption for NH3 on Si(0 0 1)

We discuss the interaction between adsorbing ammonia molecules and pre-adsorbed ammonia fragments on the Si(0 0 1) surface, searching for experimental evidence of a H-bonded precursor state predicted by modelling. While correlations along dimer rows have already been identified, these mix substrate-mediated effects due to dimer buckling with ammonia–adsorbate effects. Correlations between fragments on neighbouring dimer rows are not affected by substrate effects (in this system), allowing an analysis of direct ammonia–adsorbate effects. We present an analysis of cross-row correlations in existing high-coverage STM data which shows significant correlations between NH₂ groups on neighbouring dimer rows over a significant range, providing evidence for the H-bonded precursor state with a range of around 10 Å. We discuss implications for the interpretation of STM images of ammonia on Si(0 0 1).     

Metallization of Ge(0 0 1)-p(2 × 1) surface as result of thermal fluctuations

We present a theoretical study of the metallization of Ge(0 0 1)-p(2 × 1) surface which is observed in experimental data. We have considered the connection between thermal fluctuation of this surface structure and its metallic properties. To this end we have performed long-time MD-DFT simulations. The obtained results show that thermal fluctuation of the Ge(0 0 1)-p(2 × 1) structure may cause its metallization which in not necessary connected with a flip-flop motion of dimer atoms. It was shown that the metallization of the Ge(0 0 1)-p(2 × 1) surface takes place when the dimer buckling angle is reduced to around 11°. In the case of our simulations the considered surface system remained in the metallic state for 25% of the simulation time. We have also found that the metallic state of the fluctuating Ge(0 0 1)-p(2 × 1) surface is built up by dangling bonds of the dimer atoms shifted up (D_up) and down (D_down).     

Tetra-σ bonding adsorption of pyridine on Si(1 0 0)-2 × 1

We studied adsorption of pyridine on Si(1 0 0) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray adsorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, N 1s spectra of pyridine on Si(1 0 0) showed that pyridine is chemisorbed on Si(1 0 0)-2 × 1 through the formation of the tetra-σ-bonded structure with the N atom and three C atoms. NEXAFS was conducted to characterize the adsorption geometry of pyridine on Si(1 0 0). The π* orbital of CC bond showed a good angle dependence in C K-edge NEXAFS spectra, and we were able to estimate the adsorption angle between chemisorbed pyridine of CC bond and the Si(1 0 0) surface using an analytical solution of NEXAFS intensity. We find the coexistence of two different tight bridges with the adsorption angles 42 ± 2° and 45 ± 2° with almost equal abundance.     

STM observation of initial growth of Sn atoms on Ge(0 0 1) surface

We have studied initial growth of Sn atoms on Ge(0 0 1) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(0 0 1) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the 〈3 1 0〉 and the 〈1 1 0〉 directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the 〈3 1 0〉 direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(0 0 1) and Si(0 0 1) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface strain.     

Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)

Behavior of N atoms in atomic-order nitrided Si_0.5Ge_0.5(1 0 0) by heat treatment in Ar at 600 °C was investigated by X-ray photoelectron spectroscopy (XPS). For thermal nitridation by NH₃ at 400 °C, nitridation of surface Si atoms tends to proceed preferentially over nitridation of surface Ge atoms. It is also clear that, with the heat treatment, nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms. Angle-resolved XPS results show that Ge fraction beneath the surface nitrided layer increases significantly at 600 °C compared to the initial surface. These results indicate that preferential nitridation of Si atoms at surface over Ge atoms induces Ge segregation beneath the surface nitrided layer at higher temperatures above 400 °C.     

Initial stage of CdTe on Si(1 0 0) grown by MBE

The initial stage of CdTe growth on silicon has been investigated using angle-resolved photoemission and scanning tunneling microscopy (STM). In order to study initial stage of CdTe on Si, we have desorbed CdTe by annealing at 600 °C so that only one monolayer of Te remains on the Si(1 0 0) substrate. Te/Si(1 0 0)2×1 superstructure has been observed by LEED. Photoemission spectra indicate that Te atoms bond with the Si dangling bond. Atomically resolved STM images reveal that the Te atoms form dimers. It is observed that buckling direction of Te-dimer changes and the dimmers are broken in the site of some dimmer rows. It can be explained that the large lattice mismatch cause the switching of the buckling direction and the breaking of Te-dimer resulted surface relaxation.     

Discrimination of individual atoms on Ge/Si(1 1 1)-(7 × 7) intermixed surface

We have discriminated individual Ge atoms from the intermixed Ge/Si(1 1 1)-(7 × 7) surface using a non-contact atomic force microscope at a room temperature environment. In fact, Si-Ge (IV-IV) binary system is considered as one of the most difficult systems for atomic discrimination among atoms in the IV group because of the similarities in the electronic and chemical properties. However, in this study, we found one of the most attractive tools to discriminate a specific atom from the others even in the difficult Si-Ge system. Ge atoms are shown as dim spots in comparison to Si atoms with bright spots on the intermixed surface by a weak chemical bonding energy and/or a relaxation effect despite large atomic radius and high spatial position in both variable frequency shift and topographic images. The discrimination of individual atoms with respect to the chemical interaction variation will further provide a chance to manipulate different atomic species and assemble various nanostructures in near future.     

SiH4 adsorption on SiGe(0 0 1)

The adsorption process of silane (SiH₄) on a SiGe(0 0 1) surface has been investigated by using infrared absorption spectroscopy in a multiple internal reflection geometry. We have observed that SiH₄ dissociatively adsorbs on a SiGe(0 0 1) surface at room temperature to generate Si and Ge hydrides. The dissociation of Si- and Ge-hydride species is found to strongly depend on the Ge concentration of the SiGe crystal. At a low Ge concentration of 9%, Si monohydride (SiH) and dihydride (SiH₂) are preferentially produced as compared to the higher Si hydride, SiH₃. At higher Ge concentrations of 19%, 36%, on the other hand, monohydrides of SiH and GeH and trihyderide SiH₃ are favorably generated at the initial stage of the adsorption. We interpret that when SiH₄ adsorbs on the SiGe surface, hydrogen atoms released from the SiH₄ molecule stick onto Ge or Si sites to produce Si or Ge monohydrides and the remaining fragments of -SiH₃ adsorb both on Si and Ge sites. The SiH₃ species is readily decomposed to lower hydrides of SiH and SiH₂ by releasing H atoms at low Ge concentrations of 0% and 9%, while the decomposition is suppressed by Ge in cases of 19% and 36%.     

Ge(5 × 5) as a wetting layer on Si(1 1 1)

Ab initio total energy methods are used to investigate the effects on a Ge(1 1 1)-5 × 5 surface of the lateral compressive stress that would be due to a Si substrate, and the effects of intermixing at the interface with the substrate. The effects of stress due to the lattice mismatch between Si and Ge are studied on a Ge slab by changing the lattice constant in the surface plane from that of experimental bulk diamond Ge to that of Si. When this is done the height difference of the Ge adatoms in the faulted half-cell from those in the unfaulted half is accentuated. Effects on the Ge surface due to the presence of the Si-Ge interface were studied using a thin Ge layer on a Si substrate. The presence of the substrate leads to corrugations with significant height differences appearing among the faulted adatoms. The energetics of intermixing were investigated for Si-Ge single atom interchanges. Additional corrugations resulted from the shortened bondlengths due to the Si impurity in the wetting layer.     

Adsorption of Ag on Si(1 0 0) surface

The chemisorption of one monolayer Ag atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The adsorption energies (E_ad) of different sites are calculated. It is found that the adsorbed Ag atoms are more favorable on C site (fourfold site) than on any other sites on Si(1 0 0) surface, the polar covalent bond is formed between Ag atom and surface Si atom, a Ag and Si mixed layer does not exist and does form an abrupt interface at the Ag–Si(1 0 0) interface. This is in agreement with the experiment results. The layer-projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated. Comparing with the Au/Si(1 0 0) system, the interaction is weaker between Ag and Si than between Au and Si.     

Growth and characterization of CoSi2 films on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi₂ film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi₂. The CoSi₂ films prepared by this way are characterized by XTEM, XPS and AFM.     

Density-functional study of the CO chemisorption on bimetallic Pd–Sn(1 1 0) surfaces

We study the ordered PdSn c(2 × 2), (2 × 1), and PdSn₂ (3 × 1) overlayers deposited on Pd(1 1 0) by using first-principles density-functional calculations. It appears that the two PdSn structures are almost degenerate in the energy. Pd–Sn surfaces we consider do not display the marked buckling with Sn atoms displaced towards vacuum that is common for Pt–Sn surfaces. Low-coverage CO chemisorption at these overlayers and on analogous surface structures on Pd₃Sn is considered. It is shown that inclusion of an empirical correction to the CO adsorption energy changes the stable adsorption site from the long-bridge to the top one in most cases. The adsorption energy decreases with the number of Sn atoms in the vicinity of the adsorption site, and this property correlates well with the position of the centre of gravity of the local Pd d-electron band, and also with the variation of the local density of d-electron states at the Fermi level. The centre-of-gravity value is used to assess the core-level shifts for Pd atoms in various geometries. Most of the calculated data compare rather well with the recent measurements on Pd–Sn overlayers at Pd(1 1 0) as well as with other data on related bimetallic systems.     

Density functional study of the adsorption of aspirin on the hydroxylated (0 0 1) -quartz surface

In this study the adsorption geometry of aspirin molecule on a hydroxylated (0 0 1) α-quartz surface has been investigated using DFT calculations. The optimized adsorption geometry indicates that both, adsorbed molecule and substrate are strongly deformed. Strong hydrogen bonding between aspirin and surface hydroxyls, leads to the breaking of the original hydroxyl–hydroxyl hydrogen bonds (Hydrogenbridges) on the surface. In this case new hydrogen bonds on the hydroxylated (0 0 1) α-quartz surface appear which significantly differ from those at the clean surface. The 1.11 eV adsorption energy reveals that the interaction of aspirin with α-quartz is an exothermic chemical interaction.     

Theoretical investigation of Mn adsorbates aside self-organised Bi nanolines on hydrogenated Si(0 0 1) surface

We have theoretically investigated the atomic structure, magnetic behaviour, and electronic properties of Mn adsorbates on hydrogen passivated self-organised Bi nanolines on the Si(0 0 1)surface. It is found that the most stable geometry for monolayer (ML) coverage of Mn is just underneath the first Si(0 0 1) surface layer. The Mn atoms in the optimised configuration are seven-fold coordinated with their neighbouring Si atoms. Total energy calculations suggest that the Mn adsorbates form a degenerate state of ferromagnetic and anti-ferromagnetic lines parallel and adjacent to the self-assembled Bi lines. The density functional band structure calculation within the local-spin density approximation shows that the ferromagnetic system behaves like a metal in both spin channels. On the other side, the anti-ferromagnetic phase exhibits a half-metallic phenomenon with semiconducting character for the majority spin channel and semi-metallic character for the minority spin channel.     

A structural parallel between Ge- and Si-induced 4 × 4 and 3 × 3 reconstructions on SiC(0 0 0 1) drawn from comparative RHEED oscillations

The initial Ge growth stages on a (√3 × √3)R30°-reconstructed SiC(0 0 0 1) surface (√3) have been studied using a complete set of surface techniques such as reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), atomic force microscopy (AFM) and photoemission and compared with similar Si surface enrichments in place of Ge. The investigations essentially focus on the wetting growth-regimes that are favoured by the use of the √3 surface as a starting substrate, this surface being the closest to a smooth and ideally truncated Si-terminated face of hexagonal SiC(0 0 0 1). Depending on temperature and Ge or Si coverages, varying surface organizations are obtained. They range from unorganized layer by layer growths to relaxed Ge(1 1 1) or Si(1 1 1) island growths, through intermediate attempts of coherent and strained Ge or Si surface layers, characterized by 4 × 4 and 3 × 3 surface reconstructions, respectively. RHEED intensity oscillation recordings, as a function of Ge or Si deposited amounts, have been particularly helpful to pinpoint the limited (by the high lattice mismatch) existence domains of these interesting coherent phases, either in terms of formation temperature or surface coverages. Prominently comparable data for these two Ge- and Si-related reconstructions allow us to propose an atomic model for the still unexplained Ge-4 × 4 one. It is based on a same local organization in trimer and ad-atom units for the Ge excess as admitted for the Si-excess of the 3 × 3 surface, the higher strain nevertheless favouring arrangements, for the Ge-units, in 4 × 4 arrays instead of 3 × 3 Si ones. Admitting such models, 1.25 and 1.44 monolayers of Ge and Si, should, respectively, be able to lie coherently on SiC, with respective lattice mismatches near 30% and 25%. The experimental RHEED-oscillations values are compatible with such theoretical ones. Moreover, these RHEED coverage determinations (for layer completion, for instance) inform us in turn about the initial Si richness of the starting √3 reconstruction and help us to discriminate between earlier contradictory atomic models proposed in the literature.     

Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

Ground-state properties of arsenic deposited on the Ge(0 0 1)(2 × 1) surface

We present results of ab initio calculations of structural, electronic and vibrational properties of the Ge(0 0 1) surface covered with a monolayer of arsenic. The fully occupied π_u bonding and π_g antibonding electronic states due to the As-As dimer formation are quite close in energy and their ordering is same as that found on the Si(0 0 1) surface. Using our calculated atomic and electronic structures, surface lattice dynamics was studied by employing a linear response approach based on density functional perturbation theory. A comparison of the phonon spectrum of the Ge(0 0 1)/As(2 × 1) surface with that of the clean Ge(0 0 1)(2 × 1) surface indicates the presence of several new characteristic phonon modes due to adsorption of As atoms.     

Time-of-flight distributions of HD molecules abstracted at a Si(1 0 0) surface

We study the dynamics of D abstraction by 0.05 eV H atoms on a Si(1 0 0) surface. Time-of-flight (TOF) distributions of the abstracted HD molecules are measured using a quasi-random chopper/cross-correlation method. The measured TOF distribution is found to be broad and fast. The distribution is decomposed into two components being related to direct abstraction (ABS) and adsorption-induced-desorption (AID), which were revealed in the kinetics studies. The best curve fits yield mean kinetic energies of 1.15 ± 0.20 eV and 0.33 ± 0.05 eV for the ABS and AID components, respectively. Dynamics and kinetics of hydrogen abstraction at Si(1 0 0) surfaces are consistently understood.