首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 0 毫秒
1.
2.
The mobility of low-angle grain boundaries in pure metals is reviewed and several theoretical treatments are provided. The approach that provides the best agreement with the available experimental data is one in which the mobility is controlled by vacancy diffusion through the bulk to (and from) the dislocations that comprise the boundary that are bowing out between pinning points. The pinning points are presumed to be extrinsic dislocations swept into the boundaries or grown in during the prior processing of the material. This approach yields a mobility that is constant with respect to misorientation angle, up to the transition to the high-angle regime. For small misorientations of the order 1°, however, the mobility appears to increase with decreasing misorientation angle.  相似文献   

3.
A theoretical model that describes split grain-boundary dislocations in low-angle tilt boundaries of high-temperature superconductors is suggested. It is shown that the dissociation of dislocations in low-angle tilt boundaries is usually accompanied by a decrease in their elastic energy and causes an increase in the critical current density across the boundaries in high-temperature superconductors.  相似文献   

4.
In this article, we examine the conditions that favour the emission of Shockley partial dislocations (SPDs) that standoff from a grain boundary (GB) plane by a few lattice parameters as part of the atomic structure of some GBs. To do so, we consider GBs to be formed by the operation of arrays of intrinsic grain boundary dislocations (GBDs) that create the tilt and twist misorientation, and the lattice mismatch between the two crystal grains adjoining the GB. The conditions to be considered that favour SPDs are the following: (1) Frank’s rule, (2) the proper sequential arrangement of partial dislocations to bound an intrinsic stacking fault and (3) the equilibrium stand-off distance (ESD). We apply an isotropic elasticity analysis to compute the ESD, in the absence of an applied stress, for SPDs emerging from asymmetric tilt GBs in two FCC metals, Cu and Al. The ESD is shown to be dependent on the glide plane orientation relative to the GB plane and on the position of the glide planes, relative to the position of the GBDs. An applied stress increases the ESD up to a critical stress that removes the SPDs without limit from the GB. We examine the effect of the stacking fault energy on the ESD and critical stress. The critical stress is effectively linearly dependent on the stacking fault energy. Finally, we present results of atomistic simulations of asymmetric tilt Σ11[1?0?1]{4?1?4}||{2?5?2} GBs in Cu bicrystal models subject to shock loading that behave in a manner similar to the elasticity predictions. The atomistic simulations reveal additional behaviour associated with elastic incompatibility between the two grains in the bicrystal models.  相似文献   

5.
The wetting phase transition at low-angle intercrystallite grain boundaries has been experimentally observed. In contrast to the high-angle grain boundaries with the misorientation angels θ > 15°, the low-angle grain boundaries (θ < 15°) are not continuous two-dimensional defects, but constitute a discrete wall (network) of lattice dislocations (edge and/or helical). The theory predicts that, depending on θ, either a continuous layer of the liquid phase or a wall (network) of microscopic liquid tubes on wetted dislocation nuclei is formed at completely wetted low-angle grain boundaries. It has been shown that the continuous liquid layers at low-angle grain boundaries in the Cu-Ag alloys appear at the temperature T wminL = 970°C, which is 180°C higher than the onset temperature T wmin = 790°C and 50°C lower than the finish temperature of the wetting phase transition at high-angle grain boundaries, T wmax = 1020°C.  相似文献   

6.
The use of a classic phase retrieval algorithm has been previously used to determine the local critical current Jc(x) along the length of grain boundary Josephson junctions that can be characterized using a standard s-wave model. The phase retrieval approach has been modified for use with d-wave dominated superconductors to allow for negative local currents along the boundary. In general solutions to the 1-D phase problem are not unique, however in the present work special constraints are employed experimentally to ensure uniqueness. The various current distribution solutions and their possible uniqueness are explored. The solutions are consistent with most existing d-wave Josephson junction boundary models and can be used to understand the basic current distribution along 45° YaBa2Cu3O7−x grain boundary junctions as well as providing a means for mapping the location of self-generated flux cores.  相似文献   

7.
The relaxation of the extrinsic grain boundary dislocation (EGBD) stresses, created by interaction of lattice dislocations with grain boundaries (GBs), is a phenomenon which plays an important role in recrystallization and high temperature deformation of materials. The kinetics of this phenomenon, controlled by GB diffusion, are relatively well established. On the contrary, the processes which operate in order the GBs return to equilibrium are still controversed in vicinal and general GBs.The decomposition in discrete products and the rapid motion of the glissile components observed by High Resolution Electron Microscopy (HREM) in symmetrical tilt GBs support the recent incorporation model of EGBD accommodation. But, until now, these observations and this model are restricted to GBs described by the Structural Unit/Grain Boundary Dislocation (SU/GBD) model. Otherwise, the Spreading phenomenon generally observed by Transmission Electron Microscopy (TEM) in vicinal and general GBs is not clearly understood.This paper is an attempt to review the different EGBD accommodation models and to raise up the question of their relevance to account for the stress relaxation in any grain boundary.  相似文献   

8.
A theoretical model is proposed to describe the emission of partial dislocations by grain boundaries in nanocrystalline materials during plastic deformation. Partial dislocations are assumed to be emitted during the motion of grain-boundary disclinations, which are carriers of rotational plastic deformation. The ranges of the parameters of a defect structure in which the emission of partial dislocations by grain boundaries in nanocrystalline metals are energetically favorable are calculated. It is shown that, as the size of a grain decreases, the emission of partial dislocations by its boundary becomes more favorable as compared to the emission of perfect lattice dislocations.  相似文献   

9.
10.
A theoretical model that effectively describes stress-driven migration of low-angle tilt grain boundaries in nanocomposites with nanocrystalline or ultrafine-grained metallic matrices containing ensembles of coherent nanoinclusions has been developed. Within this model, low-angle tilt boundaries have been considered as walls of edge dislocations that, under the influence of stress, slip in the metallic matrix and can penetrate into nanoinclusions. The dislocation dynamics simulation has revealed three main regimes of the stress-driven migration of low-angle grain boundaries. In the first regime, migrating grain boundaries are completely retarded by nanoinclusions and their migration is quickly terminated, while dislocations forming grain boundaries reach equilibrium positions. In the second regime, some segments of the migrating grain boundaries are pinned by nanoinclusions, whereas the other segments continue to migrate over long distances. In the third regime, all segments of grain boundaries (except for the segments located at the boundaries of inclusions) migrate over long distances. The characteristics of these regimes have been investigated, and the critical shear stresses for transitions between the regimes have been calculated.  相似文献   

11.
Helium bubble formation was observed in austenitic stainless steels by transmission electron microscopy following implantation of 30 to 1000 appm helium at room temperature and annealing at 700 to 800°C. Helium bubble distributions at dislocations and at various grain boundaries and precipitates were studied. It was found that interfacial dislocations play a dominant role in bubble nucleation at grain and interphase boundaries but not at Tic-matrix interfaces. Particularly high trapping of helium was observed at Tic precipitate-matrix interfaces which is attributed to an inhomogeneous ripening mechanism.  相似文献   

12.
Low-angle grain boundaries (GBs) in superconductors exhibit intermediate Abrikosov vortices with Josephson cores, whose length l along GB is smaller than the London penetration depth, but larger than the coherence length. We found an exact solution for a periodic vortex structure moving along GBs in a magnetic field H and calculated the flux flow resistivity R(F)(H), and the nonlinear voltage-current characteristics. The predicted R(F)(H) dependence describes well our experimental data on 7 unirradiated and irradiated YBa(2)Cu(3)O(7) bicrystals, from which the core size l(T), and the intrinsic depairing density J(b)(T) on nanoscales of a few GB dislocations were measured for the first time. The observed J(b)(T) = J(b0)(1-T/T(c))(2) indicates a significant order parameter suppression on GB.  相似文献   

13.
A theoretical model is suggested which describes phason imperfections (specific excitations) in a quasiperiodic grain boundary in a polycrystalline solid as dilatation flexes. In the framework of the model, an elastic stress field of the quasiperiodic grain boundary is calculated as a stress field created by an ensemble of dilatation flexes (phason imperfections) located in the boundary. It is shown that there is a special elastic interaction between crystal lattice defects and quasiperiodic grain boundaries comprising phason imperfections. The strengthening effect in plastically deformed polycrystalline solids is quantitatively described which is related to the special elastic interaction between lattice dislocations and quasiperiodic grain boundaries. Received: 29 October 1996 / Revised: 22 August 1997 / Accepted: 13 November 1997  相似文献   

14.
The X-ray-beam-induced current (XBIC) method is used to calculate the contrasts of dislocations and grain boundaries perpendicular to a surface as a function of the diffusion length of minority charge carriers and the X-ray probe width. The results are compared with the contrasts of the same defects determined via the electron-beam-induced current (EBIC) techniques. It is demonstrated that the XBIC contrasts of grain boundaries and dislocations can be several times greater than those obtained in the EBIC mode in the case of a rather narrow X-ray beam. The XBIC contrast always exceeds that of EBIC in semiconductors with a large diffusion length even if the X-ray beam is rather wide.  相似文献   

15.
Strong correlations are known to severely reduce the mobility of charge carriers near half filling and thus have an important influence on the current carrying properties of grain boundaries in the high-T(c) cuprates. In this Letter we present an extension of the Gutzwiller projection approach to treat electronic correlations below as well as above half filling consistently. We apply this method to investigate the critical current through grain boundaries with a wide range of misalignment angles for electron- and hole-doped systems. For the latter excellent agreement with experimental data is found. We further provide a detailed comparison to an analogous weak-coupling evaluation.  相似文献   

16.
17.
A Bean model-based program (“Trazacorrientes”®) has been used to simulate the current distribution in the saturated remanent state of type-II superconducting bicrystal-like squared samples. The grain boundary was modeled by a set of periodically spaced holes geometrically defining the current transparency. Current simulations performed as a function of the boundary transparency, width and geometry are analyzed. Current distributions agree qualitatively with previously reported imaging measurements, while quantitative results can be obtained with an accuracy of 5% due to present computing resolution limits. Thanks to “Trazacorrientes”® easy way of implementing irregular defects, meandering grain boundaries formed by straight facets of different local transparency could be simulated. The advantages and disadvantages of the program for the simulation of type-II superconductors with defects, among which GB’s, are discussed.  相似文献   

18.
The effect of dilatational stresses of grain boundaries on the atomic structure rearrangement near these boundaries in high-temperature superconductors is discussed. The concentration profiles characterizing the spatially inhomogeneous distribution of oxygen near small-angle tilt boundaries in Bi-Sr-Ca-Cu-O superconductors are calculated.  相似文献   

19.
In terms of two-dimensional dislocation-disclination dynamics, a theoretical model is developed to describe the decay of a low-angle tilt boundary in a deformed nanocrystalline material under the action of an externally applied elastic stress and of the elastic field of a neighboring decayed boundary. The critical external stresses are calculated at which the boundary decays and the dislocations making up this boundary either are trapped by the boundary that decayed earlier or break away from both boundaries. The decay of a low-angle tilt boundary is shown to result in a substantial decrease in the critical decay stresses for the neighboring boundaries, which can cause an avalanche-like chain decay of low-angle boundaries yielding high-density ensembles of mobile dislocations capable of carrying substantial plastic deformations and of forming shear bands in deformed nanocrystalline materials.  相似文献   

20.
A numerical method of solution of the Peierls-Nabarro integro-differential eqation for a given force law(f) is proposed. The solution, i.e., the disregistryf(x) or the dislocation densityq(x)=df/dx is found in a form which describes the splitting of a dislocation into the chosen number of partial dislocations. The method is applied to the study of planar cores of 1/2111 dislocation in b.c.c. metals on {112} and on {110} planes. The force laws(f) are derived from the dependence of the stacking fault energy on disregistryf; the(f) curves calculated by Vítek (1969) for-Fe for two different interatomic potentials are used. In all cases, the solution is well represented by splitting into three partials.Na Slovance 2, Praha 8, Czechoslovakia.The authors are indebted to Dr. J. Moudrý for his help in programming for the computer Minsk 22.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号