Up-conversion and population of excited erbium levels in LiY1−x ErxF4 (x=0.003–1) crystals under CW InGaAs laser-diode pumping

Formation of the inverse population of working levels of 3-μm laser transition in LiY_1−x Er_xF₄ (x=0.003–1) crystals under CW InGaAs laser-diode pumping (0.967–0.982 μm) was investigated. Dependences of population of the ⁴ I _11/2 and ⁴ I _13/2 levels on the dopant concentration and pump power were studied theoretically and experimentally. Relative changes in populations of the studied levels were experimentally monitored by measuring the steady-state spectra of IR crystal luminescence in the wavelength range corresponding to ⁴ I _11/2→⁴ I _13/2 (2.7–2.8 μm), ⁴ I _11/2→⁴ I _15/2 (0.96–1.04 μm), and ⁴ I _13/2→⁴ I _15/2 (1.45–1.65 μm) transitions. Theoretical and experimental estimates of the rates of intracenter and intercenter relaxation processes (migration, self-quenching, and up-conversion) with allowance for statistics of coupling of impurity centers in the system were used to determine the energy-transfer mechanisms, elucidate the predominant mechanisms, and obtain microparameters and concentration dependences of the energy-transfer rates and nonlinear coupling. Dependences of the steady-state population of the levels of laser transition ⁴ I _11/2→⁴ I _13/2 on the dopant concentration and pumping power density were calculated within the context of rate balance equations for the scheme with the five lowest excited states of erbium. Good agreement between theory and experiment was obtained. __________ Translated from Optika i Spektroskopiya, Vol. 92, No. 1, 2002, pp. 73–88. Original Russian Text Copyright ? 2002 by Tkachuk, Razumova, Mirzaeva, Malyshev, Gapontsev.     

SPECTROSCOPIC INVESTIGATION ON THE PROPERTIES OF VISIBLE AND NEAR INFRARED EMISSIONS IN Tm3+, Ho3+ Co-DOPED YVO4 CRYSTALS

With the help of absorption and fluorescence spectra, the spectroscopic properties of Tm³⁺, Ho³⁺:YVO₄ crystals have been investigated under different dopant concentrations. The absorption results show that the maximum absorption in the spectral range of currently available powerful laser diodes (LD) is at 796 nm, corresponding to the transition ³H₆→³H₄ of Tm³⁺ in the crystals. Upon the excitation with a LD at 808 nm, we have detected ten fluorescence bands in the spectral range spanning from visible to infrared. In visible region 4 upconversion bands have been observed centered at 475, 547, 660, and 701 nm. Discussions of the energy transfer processes suggest that cross relaxations and excited absorptions with the involvement of Tm^{3+ 3}F₄, ³H₅ and Ho^{3+ 7}I₅ states are responsible for the four upconversion emissions. Comprising the relative integrated intersities of 2 μm (Ho³⁺: ⁵I₇→⁵I₈) and 1.8 μm (Tm³⁺: ³F_4→³H₆) bands we have observed an efficient energy transfer from Tm³⁺ (³F₄) to Ho³⁺ (⁵I₇). Examination of the ratios of the intensity of 2 μm band to that of 1.8 μm band as a function of the ratios of Tm³⁺ concentration (c_Tm) to Ho³⁺ concentration (c_Ho) indicates that small concentration ratios (c_Tm/c_Ho) lead to high efficient energy transfers of Tm³⁺(³F₄)→Ho³⁺(⁵I₇).     

Investigations of spectroscopic parameters and molecular constants for X1Σg+, w3Δu, and W1Δu electronic states of P2 molecule

The potential energy curves (PECs) of three low-lying electronic states (X¹Σ_g⁺, w³Δ_u, and W¹Δ_u)of P₂ molecule are investigated using the full valence complete active space self-consistent field (CASSCF) method followed by the highly accurate valence internally contracted multireference configuration interaction (MRCI) approach in conjunction with the correlation-consistent basis set in the valence range. The PECs of the electronic states involved are modified by the Davidson correction and extrapolated to the complete basis set (CBS) limit. With these PECs, the spectroscopic parameters of the three electronic states are determined and compared in detail with the experimental data. The comparison shows that excellent agreement exists between the present results and the available experimental data. The complete vibrational states are computed for the w³Δ_u, and W¹Δ_u electronic states when the rotational quantum number J equals zero and the vibrational level G(v), the inertial rotation constant B_v, and the centrifugal distortion constant D_v of the first 30 vibrational states are reported, which accord well with the experimental data. The present results show that the two-point extrapolation scheme can obviously improve the quality of spectroscopic parameters and molecular constants.     

Frequency dispersion of dielectric coefficients of layered TlGaS<Subscript>2</Subscript> single crystals

Frequency dependence of the dissipation factor tanδ, the permittivity ɛ, and the ac conductivity σ_ac across the layers in the frequency range f=5×10⁴−3×10⁷ Hz was studied in layered TlGaS₂ single crystals. A significant dispersion in tanδ was observed in the frequency range 10⁶−3×10⁷ Hz. In the range of frequencies studied, the permittivity of TlGaS₂ samples varied from 26 to 30. In the frequency range 5×10⁴−10⁶ Hz, the ac conductivity obeyed the f ^0.8 law, whereas for f>10⁶ Hz σ_ac was proportional to f ². It was established that the mechanism of the ac charge transport across the layers in TlGaS₂ single crystals in the frequency range 5×10⁴−10⁶ Hz is hopping over localized states near the Fermi level. Estimations yielded the following values of the parameters: the density of states at the Fermi level N _F=2.1×10¹⁸ eV⁻¹ cm⁻³, the average time of charge carrier hopping between localized states τ=2 μs, and the average hopping distance R=103 ?. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 6, 2004, pp. 979–981. Original Russian Text Copyright ? 2004 by Mustafaeva.     

Spectroscopic properties of Nd—doped phosphate glass with a high emission cross section

Neodymium doped phosphate glasses have been prepared by the semi-continuous melting technique. Their absorption and emission spectra have been recorded at room temperature. The Judd－Ofelt theory has been applied to evaluate the stimulated emission cross sections of ⁴F_3/2→⁴I_11/2 transition for Nd³⁺. The higher stimulated emission cross section, 4.0×10^-20cm², is obtained. The fluorescence decays of the ⁴F_3/2→⁴I_11/2 transition of Nd³⁺ are measured for the samples doped (0.7－10) wt% of Nd₂O₃ at room temperature. The concentration quenching of Nd-doped phosphate glass is mainly attributed to cross-relaxation and energy migration. The site-dependent properties of fluorescence spectra and the fluorescence lifetime of the Nd³⁺-doped phosphate glass (with 2.2wt%Nd₂O₃) are studied using laser-induced fluorescence line narrowing techniques, and the site-to-site variations of optical properties are observed at low temperature.     

Synthesis, structure, and dielectric properties of KH2PO4 fractal aggregates

Macroscopic fractal aggregates of KH₂PH₄ (KDP) measuring up to 500 μm have been obtained. The fractal structure forms as a result of the precipitation of KDP particles from a supersaturated aqueous solution in the presence of a temperature gradient followed by a diffusioncontrolled mechanism of aggregation. The electron-microscopic analysis performed has shown that the fractals are formed predominantly from crystallites of the tetragonal modification measuring ∼1 μm. The dielectric constant (ɛ) of fractal KH₂PO₄ has been measured in the temperature range 80–300 K. A characteristic anomaly has been discovered on the ɛ(T) curve in the vicinity of 122 K, which attests to a ferroelectric phase transition. The absolute value of ɛ is significantly smaller than the components ɛ ₁₁ and ɛ ₃₃ for KH₂PO₄. Fiz. Tverd. Tela (St. Petersburg) 41, 2059–2061 (November 1999)     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

Optoelectronic effects in p-CdGeAs2 single crystals and structures based on them

Spectra of inelastic light scattering by optical phonons in p-CdGeAs₂ single crystals were obtained for the first time. The observed clear polarization dependence and the absence of any appreciable dependence of the intensity and frequency of the observed lines when the sample is swept in ≈300 μm steps indicates these CdGeAs₂ single crystals grown by directional crystallization from a near-stoichiometric flux, are of high quality and homogeneous. The type of symmetry of the observed phonon lines is interpreted and it is shown that the force constants in CdGeAs₂ and CdSnP₂ crystals differ slightly. Temperature dependences of the electrical conductivity and the Hall constant were studied in oriented homogeneous p-CdGeAs₂ single crystals. It was established that the conductivity of these crystals is determined by the deep acceptor level E _A=0.175 eV and has the degree of compensation 0.5–0.6. The temperature dependence of the Hall mobility reflects the competition between impurity and lattice mechanisms of hole scattering. The photosensitivity of In/CdGeAs₂ surface barrier structures reaches 20 μA/W at T=300 K and remains at this level within the fundamental absorption of CdGeAs₂. It is concluded that these structures may be used as wide-band photoconverters for natural light and as selective photoanalyzers for linearly polarized radiation. Fiz. Tverd. Tela (St. Petersburg) 40, 212–216 (February 1998)     

Spectroscopic properties in Er Er3+/Yb3+Co-doped fluorophosphate glass

Using the technique of high-temperature melting, a new Er³⁺/Yb³⁺ co-doped fluorophosphate glass was prepared. The absorption and fluorescence spectra were investigated in depth. The effect of Er³⁺ and Yb³⁺ concentration on the spectroscopic properties of the glass sample was also discussed. According to the Judd-Ofelt theory, the oscillator strength was computed. The lifetime of ⁴I_13/2 level (τ_m) of Er³⁺ ions was 8.23 ms, and the full width at half maximum of the dominating emission peak was 68 nm at 1.53 τ_m. The large stimulated emission cross section of the Er³⁺ was calculated by the McCumber theory. The spectroscopic properties of Er³⁺ ion were compared with those in different glasses. The full width at half maximum and σ_e are larger than those of other glass hosts, indicating this studied glass may be a potentially useful candidate for high-gain erbium-doped fiber amplifier.     

1,3-二烷基咪唑离子液体-水二元混合物的溶致显色参数和优先溶剂化行为

Binary mixtures of 1,3-dialkylimidazolium based ionic liquids (ILs) and water were selected as solvent systems to investigate the solute-solvent and solvent-solvent interactions on the preferential solvation of solvatochromic indicators at 25℃. Empirical solvatochromic parameters, dipolarity/polarizability (π^*), hydrogen-bond donor acidity (α), hydrogen-bond acceptor basicity (β), and Reichardt''s polarity parameters (E_T^N) were measured from the ultraviolet-visible spectral shifts of 4-nitroaniline, 4-nitroanisole, and Reichardt''s dye. The solvent properties of the IL-water mixtures were found to be influenced by IL type and IL mole fraction (x_IL). All these studied systems showed the non-ideal behavior. The maximum deviation to ideality for the solvatochromic parameters can be obtained in the xIL range from 0.1 to 0.3. For most of the binary mixtures, the π^* values showed the synergistic effects instead of the E_T^N, α and β values. The observed synergy extent was dependent on the studied systems, such as the dye indicator and IL type. A preferential solvation model was utilized to gather information on the molecular interactions in the mixtures. The dye indicator was preferentially solvated on the following trend: IL >IL-water complex >water.     

Study of crystals in medium-and long-wavelength IR ranges by surface-electromagnetic-wave spectroscopy

First observation of excitation of surface electromagnetic waves (SEW) is reported in the reststrahlen region in for biaxial crystal KTiOPO₄ (KTP) using a tunable CO₂ laser around 10 μm, and for CaF₂, BaF₂, MgO (cubic crystals), and LiNbO₃ (uniaxial crystal) in the far IR using ith a free-electron laser. The parameters of SEW propagation in these crystals have been obtained by the interference method of SEW phase spectroscopy, and the possibility of determining the complex dielectric permittivity of crystals from the SEW propagation parameters demonstrated in the range of SEW existence. Fiz. Tverd. Tela (St. Petersburg) 40, 237–241 (February 1998)     

Low temperature laser absorption spectra of methane in the near-infrared at 1.65 μm for lower state energy determination

Direct absorption spectra of the 2v₃ band of methane (CH₄) from 6038 to 6050 cm^-1 were studied at different low temperatures using a newly developed cryogenic cell in combination with a distributed feedback (DFB) diode laser. The cryogenic cell can operate at any stabilized temperature ranging from room temperature down to 100 K with temperature fluctuation less than ±1 K within 1 hour. In the present work, the CH₄ spectra in the range of 6038-6050 cm^-1 were recorded at 296, 266, 248, 223, 198, and 176 K. The lower state energy E″ and the rotational assignment of the angular momentum J were determined by a “2-low-temperature spectra method” using the spectra recorded at 198 and 176 K. The results were compared with the data from the GOSAT and the recently reported results from Campargue and co-workers using two spectra measured at room temperature and 81 K. We demonstrated that the use of a 2-low-temperature spectra method permits one to complete the E″ and J values missed in the previous studies.     

Multiferroic properties of solben gel derived Bi5Fe1-xCoxTi3O15 thin films

Co-doped Bi₅FeTi₃O₁₅ thin films (BFCT-x, Bi₅Fe_1-xCo_xTi₃O₁₅) were prepared using a sol—gel technique. XRD patterns confirm their single phase Aurivillius structure, and the corresponding powder Rietveld analysis indicates the change of space group around x=0.12. The magnetic hysteresis loops are obtained and ferromagnetism is therefore confirmed in BFCT-x thin films. The remanent magnetization (M_r) first increases and reaches the maximum value of 0.42 emu/cm³ at x=0.12 due to the possible Fe³⁺—O—Co³⁺ ferromagnetic coupling. When x = 0.25, the M_r increases again because of the dominant Fe³⁺—O—Co³⁺ ferromagnetic coupling. The remanent polarization (2P_r) of BFCT-0.25 was measured to be as high as 62 μC/cm², a 75% increase when compared with the non-doped BFCT-0 films. The 2P_r remains almost unchanged after being subjected to 5.2 × 10⁹ read/write cycles. Greatly enhanced ferroelectric properties are considered to be associated with decreased leakage current density.     

Optical parameters of Nd3＋：Er3＋：yb3＋ co-doped borosilicate glasses and their energy transfers at high temperature

This paper reports that a series of Nd³⁺:Er³⁺:Yb³⁺ co-doped borosilicate glasses have been prepared and their absorption spectra measured. The J--O intensity parameters Ω_k (k=2, 4, 6), spontaneous radiative lifetime τ_rad, spontaneous transition probability A, fluorescence branching ratio β and oscillator strength f_ed of the Nd³⁺ ions at room temperature are calculated based on Judd--Ofelt (J--O) theory. The temperature dependence of the up-conversion photoluminescence characteristics in a Nd³⁺:Er³⁺:Yb³⁺ co-doped sample is studied under a 978 nm semiconductor laser excitation, and the energy transfer mechanisms among Yb³⁺, Er³⁺ and Nd³⁺ ions are analysed. The results show that the J--O intensity parameters Ω₂ increase when the Nd³⁺ concentration of the Nd³⁺:Er³⁺:Yb³⁺ co-doped borosilicate glasses increases. The possibility of spontaneous transition is small and lifetimes are long at levels of ⁴F_5/2 and ⁴F_3/2. The intensity of Nd³⁺ emissions at 595, 691, 753, 813 and 887 nm are markedly enhanced when the sample temperature exceeds 400 K. The reasons being the cooperation of the secondary sensitization from Er³⁺ to Nd³⁺ and the contribution of a multi-phonon.     

Comparative studies of microwave absorption in the singlet paramagnets HoVO<Subscript>4</Subscript> and HoBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> in strong pulsed magnetic fields

Microwave absorption in the tetragonal singlet paramagnets HoVO₄ (zircon structure) and HoBa₂Cu₃O _x (x ≈ 6, layered perovskite structure) is studied and compared in pulsed magnetic fields up to 40 T at low temperatures. These paramagnets are characterized by a singlet-doublet scheme of the low-lying levels of the Ho³⁺ ion in a crystal field. In a magnetic field directed along the tetragonal axis, HoVO₄ exhibits resonance absorption lines at wavelengths of 871, 406, and 305 μm, which correspond to electron transitions between the low-lying levels of the Ho³⁺ ion in the crystal field. The positions and intensities of these absorption lines in HoVO₄ are well described in terms of the crystal-field formalism with the well-known interaction parameters. The absorption spectra of HoBa₂Cu₃O _x at a wavelength of 871 μm exhibit broad resonance absorption lines against the background of strong nonresonance absorption. The effects of low-symmetry (orthorhombic, monoclinic) crystal-field components, the deviation of a magnetic field from a symmetry axis, and various pair interactions on the absorption spectra of the HoVO₄ and HoBa₂Cu₃O _x crystals are discussed. Original Russian Text ? Z.A. Kazeĭ, V.V. Snegirev, M. Goaran, L.P. Kozeeva, M.Yu. Kameneva, 2008, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 133, No. 3, pp. 632–645.     

Properties of erbium luminescence in bulk crystals of silicon carbide

The infrared luminescence of Er³⁺ ions has been studied in bulk crystals of silicon carbide 6H-SiC doped with erbium in the process of their growth. The erbium centers of different symmetry in the crystals are revealed by the EPR technique. A number of intense luminescence bands of erbium ions are observed at a wavelength of about 1.54 μm. The luminescence can be excited by the light with quantum energies above and below the band gap of SiC. It is found that the luminescence exhibits unusual temperature behavior: as the temperature increases, the luminescence intensity abruptly rises starting with 77 K, passes through a maximum at ∼240 K, and, in the vicinity of ∼400 K, decreases down to the values observed at 77 K. The activation energies for the flare-up and quenching of the Er³⁺ luminescence are estimated at E _A ≈130 and ≈350 meV, respectively. The mechanisms of the flare-up and quenching of the Er³⁺ luminescence in SiC are discussed. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 5, 2000, pp. 809–815. Original Russian Text Copyright ? 2000 by Babunts, Vetrov, Il’in, Mokhov, Romanov, Khramtsov, Baranov.     

Relation between oxidation microstructure and the maximum energy product loss of a Sm2Co17 magnet oxidized at 500 ℃

The oxidation microstructure and maximum energy product (BH)_max loss of a Sm(Co_0.76, Fe_0.1, Cu_0.1, Zr_0.04)₇ magnet oxidized at 500 ℃ were systematically investigated. Three different oxidation regions were formed in the oxidized magnet: a continuous external oxide scale, an internal reaction layer, and a diffusion zone. Both room-temperature and high-temperature (BH)_max losses exhibited the same parabolic increase with oxidation time. An oxygen diffusion model was proposed to simulate the dependence of (BH)_max loss on oxidation time. It is found that the external oxide scale has little effect on the (BH)_max loss, and both the internal reaction layer and diffusion zone result in the (BH)_max loss. Moreover, the diffusion zone leads to more (BH)_max loss than the internal reaction layer. The values of the oxidation rate constant k for internal reaction layer and oxygen diffusion coefficient D for diffusion zone were obtained, which are about 1.91 × 10^-10 cm²/s and 6.54 × 10^-11 cm²/s, respectively.     

Semiconducting properties of CoO thin films

This paper reports electrical properties of CoO thin films of different thickness in the range 0.375 – 7.95 μm. Both electrical conductivity and thermopower were measured at elevated temperatures (1223 – 1423 K) and under controlled oxygen partial pressure (5 − 2.1x10⁴ Pa). It was found that at low p(O₂) the electrical conductivity decreases with film thickness. The activation energy of the electrical conductivity (E_a) in air decreases with the oxide thickness from 0.56 eV at 0.375 μm to 0.52 eV for massive CoO while at low p(O₂)=5 Pa the E_a is independent of the thickness (E_a = 0.46 eV). The reciprocal of the p(O₂) exponent of the electrical conductivity (n_δ) in the range 1223 K – 1373 K is close to four for the 7,95 μm film and is about 3.5–3.7 for the 0.375 μm film. The electrical properties of the CoO thin films are considered assuming different defect structures in the bulk phase and the surface layer.     

Edge photoluminescence spectra and the intensity of the intracenter <Emphasis Type="Italic">f</Emphasis>-<Emphasis Type="Italic">f</Emphasis> transitions in Er-and Sm-doped GaN crystals

Doping of GaN crystals prepared by various methods (HVPE and MOCVD) with various degrees of perfection of the mosaic structure, using rare-earth (RE) ions has been studied. An analysis of the shape of the photoluminescence spectra obtained before and after the doping showed that, as the defect concentration decreases, the intracenter f-f transitions characteristic of RE ions, at 1.54 and 0.54 μm in Er³⁺ and 0.72 μm in Sm²⁺, become observable. The intracenter f-f transitions of RE ions are seen, as a rule, in epitaxial layers with well-aggregated and relaxed domains and are absent in the case of a mosaic structure containing domains in the near-surface part of the epitaxial layer that are not fully coalesced. RE doping of the crystals under study was observed to initiate defect gettering. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 5, 2004, pp. 814–819. Original Russian Text Copyright ? 2004 by Krivolapchuk, Lundin, Mezdrogina, Nasonov, Rodin, Shmidt.     

Spectroscopic investigations on NO+(x1∑+,a3∑+,A1Ⅱ) ion using multi-reference configuration interaction method and correlation-consistent sextuple b

Three low-lying electronic states (x¹∑⁺,a³∑⁺,and A¹Ⅱ) of NO⁺ ion are studied using the complete active space self-consistent-field (CASSCF) method followed by highly accurate valence internally contracted multi-reference configuration interaction (MRCI) approach in combination of the correlation-consistent sextuple basis set augmented with diffuse functions, aug-cc-pV6Z. The potential energy curves (PECs) of the NO⁺(x¹∑⁺,a³∑⁺,A¹Ⅱ) are calculated. Based on the PECs, the spectroscopic parameters R_e, D_e, ω_e, ω_eχ_e, α _e, B_e, and D₀ are reproduced, which are in excellent agreement with the available measurements. By numerically solving the radial Schrödinger equation of nuclear motion using the Numerov method, the first 20 vibrational levels, inertial rotation and centrifugal distortion constants of NO⁺(x¹∑⁺,a³∑⁺,A¹Ⅱ) ion are derived when the rotational quantum number J is equal to zero (J = 0) for the first time, which accord well with the available measurements. Finally, the analytical potential energy functions of these states are fitted, which are used to accurately derive the first 20 classical turning points when J = 0. These results are compared in detail with those of previous investigations reported in the literature.