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1.
    
Chemical Vapour Transport of Solid Solutions in the CuMoO4/ZnMoO4 System Two solid solutions exist in the system CuMoO4/ZnMoO4: Cu1‐xZnxMoO4 with x=0 to x=0.15 and x=0.20 bis x=1, respectively. Single crystals of Cu1‐xZnxMoO4 were obtained by chemical vapor transport in the temperature gradient 973K→873K using Cl2, Br2 or NH4Cl as transport agents. No difference of the Cu/Zn ratio between source and sink was observed for the transport agents Cl2 and NH4Cl. A slight shift to higher Zn amounts was observed for single crystals of Cu1‐xZnxMoO4 grown using Br2 as transport agent. The experimental results were compared with results of model calculations.  相似文献   

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Chemical Vapor Transport of Ternary Cadmium Molybdates The ternary phase diagram Cd/Mo/O at 923 K have been investigated. Single crystals of CdMoO4 and Cd2Mo3O8 have been obtained via chemical vapor transport using X2 and NH4X (X = Cl, Br, I) as transport agent. Deposition rates are very different: up to 10 mg/h for CdMoO4, maximum 10–3 mg/h for Cd2Mo3O8. The observed transport behaviour is compared with results of thermodynamical model calculations. The influence of source composition, transport agent and temperature gradient is described in detail.  相似文献   

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Chemical Transport of Solid Solutions. 8. Transport Phenomena and Ionic Conductivity in the In2O3/SnO2 System Chemical transport reactions are a suitable pathway to the preparation of In2O3‐rich and SnO2‐rich mixed crystals coexisting in the In2O3/SnO2 system (Cl2 as transport agent, 1050 → 900 °C). Experiments are consistent with thermodynamic calculations. The existence of other phases in the system In2O3/SnO2 could not be confirmed. The ionic conductivity of In2O3(SnO2) was investigated.  相似文献   

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The optical properties of CVD MoO3 films were studied by ellipsometry in the spectral range 280–820 nm. The films were deposited on silicon substrates by pyrolytic decomposition at atmospheric pressure of Mo(CO)6 at 150 and 200 °C. To optimize the film structure, annealing was performed at temperatures of 300 and 400 °C. The refractive index for as-deposited MoO3 films varies within 1.8–2.2 and the optical band gap energies in the range 2.87–2.98 eV. After annealing, the latter values slightly increase to 2.85–3.05 eV, depending on the annealing temperature. The band gap energies are typical for a polycrystalline material. Peaks in the spectral dependence of the absorption coefficient were observed. Their position and intensity are found to be affected by the process temperature. Electronic Publication  相似文献   

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Vibrational and optical properties of MoO3 thin films have been studied by Raman and infrared spectroscopy. The films were deposited onto Si substrates at a temperature of 150 °C by chemical vapor deposition of Mo(CO)6 at atmospheric pressure and different amounts of oxygen in the reactor. The Raman and IR spectral analyses show that the as-deposited films are in general amorphous. Post-deposition annealing at 300 and 400 °C leads to crystallization and the MoO3 film structure is a mixture of orthorhombic and monoclinic MoO3 modifications. Transformation of the monoclinic crystallographic modification to a thoroughly orthorhombic layered structure is observed for films heated at temperatures above 400 °C. Electronic Publication  相似文献   

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Chemical Vapor Transport of Solid Solutions. 11 Mixed Phases and Chemical Vapor Transport in the Systems CrIII/InIII/GeIV/O, GaIII/InIII/GeIV/O, MnIII/InIII/GeIV/O und FeIII/InIII/GeIV/O By means of chemical vapor transport methods the following mixed phases have been prepared: Cr0, 18In1, 82Ge2O7 (Cl2, 950 → 850 °C), (Ga0, 6In1, 4)2Ge2O7 (Thortveitit‐type, Cl2, 1050 → 950 °C), (Ga1, 9In0, 1)2Ge2O7 (Ga2Ge2O7‐type, 1050 → 950 °C), (In1, 9Mn0, 1)2Ge2O7 (Thortveiti‐type, Cl2, 1000 → 800 °C), mixed phase crystallizing in the Mn2Ge2O7‐structure showing a composition near MnInGe2O7 (Cl2, 1000 → 800 °C), Mn6, 5In0, 5GeO12 (Braunit‐type, Cl2, 1000 → 800 °C), (FexIn1‐x)Ge2O7 (Thortveitit‐type with x = 0…0, 94; Cl2, 840 → 780 °C). Changing the compositions of the starting materials showed no effect on the composition of the deposit except for the system Fe2O3‐In2O3‐GeO2.  相似文献   

9.
Chemical Vapor Transport of Intermetallic Systems. 8. Chemical Transport of Titaniumgermanides By means of chemical vapor transport using iodine as transport agent in the System Ti/Ge the compounds TiGe2 and Ti5Ge3 have been prepared in form of single crystals. Unexpectedly the phase Ti6Ge5 could not be deposited from the vapor phase. The experiments show in contrast to the literature that Ti6Ge5 is at 700 °C thermodynamic unstable. Chemical vapor transport is a suitable method to determine coexistence conditions of intermetallic compounds.  相似文献   

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Chemical Vapor Transport of Solid Solutions. 23 Chemical Vapor Transport of Mixed Phases in the System MoS2/MoSe2, MoS2/NbS2, MoSe2/NbSe2 and NbS2/NbSe2 X‐ray powder investigations have shown that MoS2/MoSe2, MoS2/NbS2, MoSe2/NbSe2 and NbS2/NbSe2 form mixed crystals without a miscibility gap. The mixed crystals can be prepared by heating the Elements for some days in the presence of small amounts of iodine as well as by chemical vapour transport. In the systems NbS2/NbSe2 and MoS2/MoSe2 the vapor transport occurs congruently, in the systems NbS2/MoS2 and NbSe2/MoSe2 however a strong enrichment of Niobium has been observed during the transport process. Mass spectrometric investigations and thermochemical calculations have shown that the transport occurs via NbI4(g) and MoI3(g).  相似文献   

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Chemical Vapor Transport of Solid Solutions. 8 The Chemical Vapor Transport of Ternary and Quarternary Cobalt and Nickel Germanates By means of chemical vapor transport methods using HCl as transport agent CoGeO3, Co2GeO4, and Ni2GeO4 have been prepared (1000 → 900 °C and 900 → 700 °C). In this system the formation of a continuous crystalline solid solution of Co2GeO4 and Ni2GeO4 was found as well as the deposition of the compound NiGeO3 which — although unknown as a pure solid — can be stabilized as a mixed crystal NixCo1—xGeO3 (0 < x < 0, 6).  相似文献   

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Chemical Transport of Bismuth Oxide Halides BiOX (X = Cl, Br, I) with X2, HX and H2O, and Determination of the Molar Enthalpies of BiOX By comparison of calculated and experimental chemical transport behaviour of BiOX (X = Cl, Br, I) with X2, HX, and H2O it was shown, that we understand the transport of BiOCl, BiOBr and BiOI with X2 and HX in terms of the well known gaseous spezies in the systems. The existence of gaseous complexes Bi(OH)2X is be concluded from high transport rates of BiOX with water, and their enthalpies and entropies were derived. The molar enthalpies and standard entropies of BiOX were determined by low temperature Cp measurements. (Data see Inhaltsübersicht)  相似文献   

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Chemical Vapor Transport of ZnS and CdS with Phosphorus — ZnS:P mixed Crystals The volality of ZnS and CdS is enlarged in the presence of Phosphorus vapor. This is due to the formation of PS(g). By means of chemical vapor transport (1000 → 900 °C) using phosphorous as transport agent ZnS:P mixed crystals (sphalerit type) have been prepared. Density measurements on these mixed crystals show that interstitial zinc atoms are the consequence of the substitution of sulfur by phophorus atoms.  相似文献   

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Chemical Vapor Transport of Solid Solutions. 7. Chemical Vapor Transport of FeS/MnS/ZnS Mixed Crystals By means of chemical vapor transport using iodine as transport agent (900 → 800 °C) it is possible to prepare in the quasiternary system FeS/MnS/ZnS the mixed crystals (Fe,Mn,Zn)S (sphalerite and wurtzite type), (Fe,Mn)S(ZnS) (NaCl type) and FeS(MnS,ZnS) (NiAs type) in form of single crystals. Based on the composition of these phases the phase diagram for the system FeS/MnS/ZnS at 800 °C was drawn up. The incongruent transport process leads to the accumulation of ZnS in the crystallization zone.  相似文献   

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On the Chemical Vapor Transport of Ternary Transition Metal‐ and Earth Alkaline Tungstates MWO4 with Chlorine The chemical vapor transport of transition metal tungstates MWO4 (M=Mn, Co, Ni, Cu, Zn, Cd) was investigated in dependence on mean transport temperature (923 K to 1223 K) and amount of transport agent Cl2. All tungstates migrate in a temperature gradient ΔT = 100 K from the region of higher temperature to the lower temperature with migration rates of 0.5 to 8 mg/h depending on experimental conditions. The transport behaviour was determined by continuous measurement of mass change during the transport experiments. The results were compared to thermo chemical calculations and the influence of moisture content discussed in detail. MgWO4 migrates under the influence of Cl2 in a temperature gradient 1273 K to 1173 K (migration rate 0.7 mg/h), CaWO4 and SrWO4 in a temperature gradient 1423 K to 1323 K (migration rate <0.1 mg/h).  相似文献   

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Mixed Crystals in the System CuMoO4/ZnMoO4 The existence of a complet solid solution serie Cu1–xZnxMoO4 (0 ≤ x ≤ 1) is confirmed. Single crystals were obtained by chemical transport with different transport agents. The compositions and structures were characterized by EDX analysis, photometic analysis, and X‐ray investigations on polycrystallin powders and single crystals. The substitution behaviour of (Cu1–xZnx)O6‐ and (Cu1–xZnx)O5‐polyhedra is different and the reason for deviations from the Vegards rule are near x = 0.25.  相似文献   

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On the Crystal Structure of CuInMo2O8 . Single crystals of CuInMo2O8 were prepared and investigated by X-ray work. It shows monoclinic symmetry, space group C—C2/c; a = 9.549 Å, b = 11.529 Å, c = 5.000 Å; β = 91.38(2)°, Z = 4. CuInMo2O8 represents a LiYbW2O8 related structure, characterised by zigzag-chains of MoO6-octahedrons and octahedrons around copper and indium. With respect to LiFeW2O8 the single and three-valent ions are in opposite distribution. There are strong evidence for molybdenum in lowered oxidation state.  相似文献   

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Chemical Vapor Transport of Intermetallic Systems. 10. Chemical Transport of Copper/Gallium and Silver/Gallium Phases The solid solution of gallium in copper and the ζ‐ and the γ‐phase can be prepared by CVT‐methods using iodine as transport agent. The solid solution of gallium in silver and the ζ‐phase and the ζ′‐phase can also prepared by CVT‐methods. Thermodynamic calculations allow to understand why these phases can be prepared by this manner.  相似文献   

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Chemical Vapor Transport of Intermetallic Systems. 9 Chemical Transport of Copper Germanides and Copper Silicides By means of chemical vapor transport using iodine and bromine as transport agents in the system Cu/Ge the compounds Cu3Ge (ϵ and ϵ1), Cu5Ge (ζ) and copper‐rich mixed crystals Cu(Ge) have been prepared in form of single crystals. Thermodynamic considerations allow to understand the CVT process, especially the unexpected low temperatures. Copper silicides can be prepared under similiar conditions. They are extremely disordered. Their crystallographic characterisation was therefore impossible.  相似文献   

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