Nonlinear optical studies of a newly synthesized copolymer containing oxadiazole and substituted thiophenes

We investigated the third-order nonlinear optical properties of a newly synthesized soluble copolymer containing oxadiazole and thiophene units using Z-scan and Degenerate Four Wave Mixing (DFWM) techniques. The measurements were performed at 532 nm with 7 ns pulses from a Nd:YAG laser. We found a good agreement between the values of χ⁽³⁾ determined from both experiments. Z-scan results indicate a negative nonlinear refractive index, n₂, whose magnitude is of the order of 10⁻¹⁰ esu. The copolymer exhibits strong nonlinear absorption and good optical limiting properties at 532 nm, and hence may be a potential material for optical limiting applications.     

Preparation and characterization of Tb and Tb(sal)3·nH2O doped PC:PMMA blend

Tb doped polycarbonate:poly(methyl methacrylate) (Tb-PC:PMMA) blend was prepared with varying proportions of PC and PMMA. Thermal and spectroscopic properties of the doped polymer have been investigated employing Fourier Transform Infrared (FTIR) absorption and differential scanning calorimetric (DSC) techniques. PC:PMMA blend (with 10 wt% PC and 90 wt% PMMA) shows better miscibility. Optical properties of the dopant Tb³⁺ ions have been investigated using UV-vis absorption and fluorescence excited by 355 nm radiation. It is seen that luminescence intensity of Tb³⁺ ion depends on PC:PMMA ratio and on Tb³⁺ ion concentration. Concentration quenching is seen for TbCl₃·6H₂O concentration larger than 4 wt%. Addition of salicylic acid to the polymer blend increases the luminescence from Tb³⁺ ions. Luminescence decay curve analysis affirms the non-radiative energy transfer from salicylic acid to Tb³⁺ ions, which is identified as the reason behind this enhancement.     

Synthesis and luminescence properties of mesophase silica thin films doped with in-situ formed europium complex

Mesophase silica thin film doped with in-situ formed ternary Eu complex was synthesized by adding ligands (DBM=dibenzoylmethane, phen=1,10-phenanthroline), Eu ions (EuCl₃·6H₂O), and Pluronic P123 triblock copolymer into hydrolyzed tetramethoxy-silane (TMOS). The structure of this inorganic/organic film was characterized as a 2d-hexagonal structure by X-ray diffraction (XRD) and TEM analysis. The excitation spectra (λ_em=612 nm) and emission spectra (λ_ex=325 nm) indicated that the ternary complex, Eu-DBM-phen, was formed in-situ during the formation of the film. The mesophase silica thin film doped with the in-situ formed Eu complex showed a higher quantum efficiency compared to a pure Eu(DBM)₃phen complex and a mesophase silica thin film doped with in-situ formed binary Eu-phen complex.     

IR laser ablation of doped poly(methyl methacrylate)

We investigate the TEA CO₂ laser ablation of films of poly(methyl methacrylate), PMMA, with average M_W 2.5, 120 and 996 kDa doped with photosensitive compounds iodo-naphthalene (NapI) and iodo-phenanthrene (PhenI) by examining the induced morphological and physicochemical modifications. The films casted on CaF₂ substrates were irradiated with a pulsed CO₂ laser (10P(20) line at 10.59 μm) in resonance with vibrational modes of PMMA and of the dopants at fluences up to 6 J/cm². Laser induced fluorescence probing of photoproducts in a pump and probe configuration is carried out at 266 nm. Formation of naphthalene (NapH) and phenanthrene (PhenH) is observed in NapI and PhenI doped PMMA, respectively, with relatively higher yields in high M_W polymer, in similarity with results obtained previously upon irradiation in the UV at 248 nm. Above threshold, formation of photoproducts is nearly complete after 200 ms. As established via optical microscopy, bubbles are formed in the irradiated areas with sizes that depend on polymer M_W and filaments are observed to be ejected out of the irradiated volume in the samples made with high M_W polymer. The implications of these results for the mechanisms of polymer IR laser ablation are discussed and compared with UV range studies.     

Structural, optical properties and VCNR mechanisms in vacuum evaporated iodine doped ZnSe thin films

Iodine doped ZnSe thin films were prepared onto uncoated and aluminium (Al) coated glass substrates using vacuum evaporation technique under a vacuum of 3 × 10⁻⁵ Torr. The composition, structural, optical and electrical properties of the deposited films were analyzed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and study of I-V characteristics, respectively. In the RBS analysis, the composition of the deposited film is calculated as ZnSeI_0.003. The X-ray diffractograms reveals the cubic structure of the film oriented along (1 1 1) direction. The structural parameters such as crystallite size, strain and dislocation density values are calculated as 32.98 nm, 1.193 × 10⁻³ lin⁻² m⁻⁴ and 9.55 × 10¹⁴ lin/m², respectively. Spectroscopic ellipsometric (SE) measurements were also presented for the prepared iodine doped ZnSe thin films. The optical band gap value of the deposited films was calculated as 2.681 eV by using the optical transmittance measurements and the results are discussed. In the electrical studies, the deposited films exhibit the VCNR conduction mechanism. The iodine doped ZnSe films show the non-linear I-V characteristics and switching phenomena.     

Analysis on fluorescence of dual excitable Eu(TTA)3DPBT in toluene solution and PMMA

Photoluminescence of Eu(TTA)₃DPBT (TTA=thenoyltrifluoro-acetonate DPBT=2-(N,N-diethylanilin-4-yl)-4,6-bis(3,5-dimethylpyrazol-1-yl)-1,3,5-triazine) in toluene and PMMA thin film are measured with excitation at 350 and 404 nm, respectively, and analyzed using Judd-Ofelt theory. Under excitation at 350 nm, it is found that Eu(TTA)₃DPBT in toluene has a larger Ω₂ value (14.33×10⁻²⁰ cm²) than that (12.70×10⁻²⁰ cm²) of Eu(TTA)₃Phen (Phen=1,10-phenanthroline) in the same solvent, and has a smaller Ω₂ value (12.70×10⁻²⁰ cm²) in PMMA than that (Ω₂=14.09×10⁻²⁰ cm²) of Eu(TTA)₃Phen in PMMA. At the same time, it can be seen that under excitation at 350 nm Ω₂ value of Eu(TTA)₃DPBT in toluene is larger than that in PMMA. Excited by 404 nm, Ω₂ of Eu(TTA)₃DPBT obtained in toluene and in PMMA are the same as that excited at 350 nm. The transition probability (A), emission cross-section (σ) and the fluorescence branching ratio (β) are also evaluated. The lifetime of ⁵D₀ metastable state is measured on 350 and 404 nm excitation, respectively. For the former situation, it is 455 μs in toluene and 640 μs in PMMA, for the latter it is 460 μs in toluene and 664 μs in PMMA. By comparing absorptions with excitations, it can be found that DPBT is more efficient than TTA as an energy donor. Phosphorescence spectra are also measured to estimate the lowest triplet level and analyze the energy transfer for DPBT and TTA, from which it is found that the energy transfer from TTA to DPBT occurs in the luminescent process.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Doped thin metal oxide films for catalytic gas sensors

TiO₂ and Pt doped TiO₂ thin films were grown by pulsed laser deposition on 〈0 0 1〉 SiO₂ substrates. The doped films were compared with undoped ones deposited in similar experimental conditions. An UV KrF* (λ = 248 nm, τ_FWHM ≅ 20 ns, ν = 2 Hz) excimer laser was used for the irradiation of the TiO₂ or Pt doped TiO₂ targets. The substrate temperatures were fixed during the growth of the thin films at values within the 300-500 °C range. The films’ surface morphology was investigated by atomic force microscopy and their crystalline quality by X-ray diffractometry. The corresponding transmission spectra were recorded with the aid of a double beam spectrophotometer in the spectral range of 400-1100 nm. No contaminants or Pt segregation were detected in the synthesized anatase phase TiO₂ thin films composition. Titania crystallites growth inhibition was observed with the increase of the dopant concentration. The average optical transmittance in the visible-infrared spectral range of the films is higher than 85%, which makes them suitable for sensor applications.     

Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Absolute line intensities of HONO and DONO in the far-infrared and re-determination of the energy difference between the trans- and cis-species of nitrous acid

Relative line intensities of trans- and cis-HONO and -DONO have been measured using absorption spectra in the far-infrared previously recorded by high-resolution Fourier-transform spectroscopy [A. Dehayem-Kamadjeu, O. Pirali, J. Orphal, I. Kleiner, P.-M. Flaud, J. Mol. Spectrosc. 234 (2005) 182-189]. These relative, experimental line intensities (120 lines for trans-HONO and 94 for cis-HONO, as well as 46 lines for trans-DONO and 31 for cis-DONO) were then least-squares fitted leading to the determination of “relative” permanent dipoles moments (b-component) and their rotational corrections for the trans- and cis-HONO and -DONO species. Then these “relative” permanent dipoles moments and their rotational corrections were scaled to the absolute values derived from Stark effect measurements [M. Allegrini, J.W.C. Johns, A.R.W. McKellar, P. Pinson, J. Mol. Spectrosc. 79 (1980) 446-454] and used to generate “absolute” line intensities. These “absolute” line intensities were used to derive the concentrations of the trans- and cis-species in the absorption cell. It was then possible, assuming thermodynamic equilibrium, to use the ratio of the concentrations of the trans- and cis-species to re-determine the energy differences (ΔE) between the ground vibrational states of trans- and cis-HONO: these energy differences are 99 ± 25 cm⁻¹ for HONO and 136 ± 30 cm⁻¹ for DONO. Finally applying zero-point-energy corrections we report an average value for ΔE_HONO of 107 ± 26 cm⁻¹. This value is in good agreement with previous experimental studies and with recent high-level ab initio calculations.     

Optical limiting action of C60 doped poly(dimethylacetylendicarboxylate)

The optical limiting action of poly(dimethylacetylendicarboxylate) polymer doped with fullerene C₆₀ has been investigated under irradiation with 10 ns laser pulses at 532 nm. The optical limiting measurements were performed at four different dopant concentrations. The threshold limiting fluence at 0.3 J/cm² was observed at high doping concentrations, with transmission of about 55%. An explanation based on the combination of two-photon absorption and reverse saturable absorption was proposed for its nonlinear optical absorption behavior.     

Preferential surface segregation of homopolymer and copolymer blend films

Surface film properties of the homopolymers polystyrene (PS), poly(methyl methacrylate) (PMMA), poly(butyl methacrylate) (PBMA) and the copolymer poly(methyl methacrylate)-co-poly(butyl methacrylate) (PMMA-co-PBMA) and their blends with PS have been examined by atomic force microscopy (AFM) and contact angle measurements. The total and the Lifshitz-van der Waals, acid and base components of the surface free energy together with the work of adhesion and its components, the cohesive energy density and the solubility parameters of the homopolymer, copolymer and blend films were determined. Films of about 3 μm were considered. The results are discussed in terms of surface migration mechanisms based on surface free energy and solubilities of the polymers in the solvent, toluene in this paper. AFM imaging and contact angles revealed surface enrichment at the air polymer interface of PBMA for both the PS/PBMA blend and the copolymer PMMA-co-PBMA, whereas the PS/PMMA and PS/PMMA-co-PBMA blend film surfaces show island-like phase-separated structure of typical size 27.4-86.5 nm in diameter and 6.9-15.6 nm in height for PS/PMMA, while for PS/ PMMA-co-PBMA film surface the typical size is 49.6-153.3 nm in diameter and 1.6-14.2 nm in height.     

Optical properties of La2O3 doped diamond-like carbon films

A novel kind of La₂O₃ doped diamond-like carbon (DLC) films with thickness of 100-120 nm were deposited by unbalanced magnetron sputtering. Raman spectra and photoluminescence properties were measured by Raman spectrometer operated by 325 nm He-Cd laser and 514 nm Ar⁺ laser, respectively. The intensities of Raman spectra and photoluminescence are higher than those of pure DLC films. The La₂O₃ doped DLC films have the potential promising for the application of solar cell coatings.     

New heteroleptic cyclometalated iridium(III) complexes containing 2-(2′,4′-difluorophenyl)-4-methylpyridine for organic light-emitting diode applications

Two phosphorescent iridium(III) complexes (dfpmpy)₂Ir(ppc) and (dfpmpy)₂Ir(prz) [dfpmpy=2-(2′,4′-difluorophenyl)-4-methylpyridine, ppc=pipecolinate, prz=2-pyrazine carboxylate] were synthesized from the reaction of the chloro-bridged dimeric complex [(dfpmpy)₂Ir(μ-Cl)]₂ and the ancillary ligand. Their structures and photoluminescence properties were investigated and device performances for application in organic light-emitting diodes (OLEDs) were studied. The complexes adopt a distorted, octahedral geometry around the iridium metal, exhibiting cis C-C and trans N-N arrangements. The photoluminescent (PL) properties reveal that (dfpmpy)₂Ir(ppc) emits in the blue-green region (λ_max=497 nm), whereas (dfpmpy)₂Ir(prz) shows red phosphorescence (λ_max=543 nm) in the film state (5% wt. doped in PMMA). The (dfpmpy)₂Ir(ppc)- and (dfpmpy)₂Ir(prz)-based OLEDs exhibited sky-blue and greenish-yellow electroluminescence with similar current-voltage characteristics, repectively. Maximum current efficiency of (dfpmpy)₂Ir(ppc) and (dfpmpy)₂Ir(prz) were 4.4 and 7.4 cd/A, respectively. Maximum luminance values were approximately 10,000 cd/m² for the both compounds.     

Effect of gamma ray irradiation on optical properties of Nd doped phosphate glass

The effect of gamma irradiation in the dose range of 5-500 kGy on the optical absorption and luminescence spectra of Nd doped phosphate glass is reported. The spectral absorption of this glass before and after gamma irradiation was measured in the spectral range 300-900 nm at room temperature using spectrophotometer and synchrotron beamline. Drastic increase in absorption was noted below 600 nm after gamma irradiation, which was dependent on the dose of irradiation. Additional absorption (AA) spectra of irradiated sample shows generation of two absorption bands below 600 nm, which finally became one very broad band peak with increased intensity at irradiation dose of 500 kGy. AA spectra also show the presence of negative peaks at the location of absorption peaks of Nd³⁺. Photoluminescence of Nd doped phosphate glass shows two strong bands which decreases to a very low intensity with a red shift after gamma irradiation. These results indicate that irradiation produces different kinds of defects in the glass material along with conversion of valence state of Nd³⁺ to Nd²⁺. This change was found irreversible at room temperature.     

Well-confined Yb:GdVO4 laser waveguide formed by MeV C ion implantation

The planar waveguide in x-cut Yb:GdVO₄ crystal has been fabricated by 6.0 MeV carbon ion implantation with the fluence of 1 × 10¹⁴ ions/cm² at room temperature. The modes of the waveguide were measured by the prism-coupling method with the wavelength of 633 nm and 1539 nm, respectively. An enhanced ordinary refractive index region was formed with a width of about 4.0 μm beneath the sample surface to act as a waveguide structure. By performing a modal analysis on the observed transverse magnetic polarized modes, it was found that all the transverse magnetic polarized modes can be well-confined inside the waveguide. Strong Yb-related photoluminescence in Yb:GdVO₄ waveguide has been observed at room temperature, which reveals that it exhibits possible applications for integrated active photonic devices.     

Effect of swift heavy ion irradiation on photoluminescence properties of ZnO/PMMA nanocomposite films

We report a study on the SHI induced modifications on structural and optical properties of ZnO/PMMA nanocomposite films. The ZnO nanoparticles were synthesized by the chemical route using 2-mercaptoethanol as a capping agent. The structure of ZnO nanoparticles was confirmed by XRD, SEM and TEM. These ZnO nanoparticles were dispersed in the PMMA matrix to form ZnO/PMMA nanocomposite films by the solution cast method. These ZnO/PMMA nanocomposite films were then irradiated by swift heavy ion irradiation (Ni⁸⁺ ion beam, 100 MeV) at a fluence of 1×10¹¹ ions/cm². The nanocomposite films were then characterized by XRD, UV-vis absorption spectroscopy and photoluminescence spectroscopy. As revealed from the absorption spectra, absorption edge is not changed by the irradiation but the optical absorption is increased. Enhanced green luminescence at about 527 nm and a less intense blue emission peak around 460 nm were observed after irradiation with respect to the pristine ZnO/PMMA nanocomposite film.     

Femtosecond laser embedded grating micromachining of flexible PDMS plates

We report on the femtosecond laser micromachining of photo-induced embedded diffraction grating in flexible Poly (Dimethly Siloxane) (PDMS) plates using a high-intensity femtosecond (130 fs) Ti: sapphire laser (λ_p = 800 nm). The refractive index modifications with diameters ranging from 2 μm to 5 μm were photo-induced after the irradiation with peak intensities of more than 1 × 10¹¹ W/cm². The graded refractive index profile was fabricated to be a symmetric around from the center of the point at which femtosecond laser was focused. The maximum refractive index change (Δn) was estimated to be 2 × 10⁻³. By the X-Y-Z scanning of sample, the embedded diffraction grating in PDMS plate was fabricated successfully using a femtosecond laser.     

Flexible gratings fabricated in polymeric plate using femtosecond laser irradiation

Flexible gratings embedded in poly-dimethlysiloxane (PDMS) were fabricated using femtosecond laser pulses. Photo-induced gratings in a flexible PDMS plate were directly written by a high-intensity femtosecond (130 fs) Ti: Sapphire laser (λ_p=800 nm). Refractive index modifications with 4 μm diameters were photo-induced after irradiation of the femtosecond pulses with peak intensities of more than 1×10¹¹ W/cm². The graded refractive index profile was fabricated to be symmetric around the center of the focal point. The diffraction efficiency of the grating samples is measured by an He-Ne laser. The maximum value of refractive index change (Δn) in the laser-modified regions was estimated to be approximately 3.17×10⁻³.     

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl₄In₃GaS₈-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52 eV, respectively. The rate of change of the indirect band gap with temperature dE_gi/dT=-6.0×10⁻⁴ eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48×10¹³ m⁻² and 2.55, respectively.