Passive Q-switching of short-length Tm-doped silica fiber lasers by polycrystalline Cr:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm³⁺-doped silica fiber lasers near 2 μm pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr²⁺:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 μJ and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at ∼10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed.     

26.3-W continuous-wave, diode-double-end-pumped all-solid-state Nd:GdVO4 laser operating at 1.34 μm

A high-power continuous-wave (CW) all-solid-state Nd:GdVO₄ laser operating at 1.34 μm is reported here. The laser consists of a low doped level Nd:GdVO₄ crystal double-end-pumped by two high-power fiber-coupled diode lasers and a simple plane-parallel cavity. At an incident pump power of 88.8 W, a maximum CW output of 26.3 W at 1.34 μm is obtained with a slope efficiency of 33.7%. To the best of our knowledge, this is the highest output at 1.34 μm ever generated by diode-end-pumped all-solid-state lasers.     

Fiber laser annealing of nanocrystalline PZT thick film prepared by aerosol deposition

Nanocrystalline PZT thick films (1 mm square and over 10 μm thick) directly deposited onto stainless-steel substrates (PZT/SUS) by aerosol deposition (AD) technique and then annealed using focused laser beam with a fiber laser to suppress thermal damage to the back sides of the PZT/SUS and substrate near the film edge and to retain the dielectric and/or ferroelectric properties of the PZT/SUS. Compared with CO₂ laser annealing, fiber laser annealing suppressed thermal damage to the substrate. Compared with PZT/SUS annealed at 600 °C using an electric furnace, PZT/SUS annealed at 600 °C using a fiber laser showed superior properties, namely, dielectric constant ? > 1200 at a frequency of 100 Hz, remanent polarization P_r > 30 μC/cm², and coercive field strength E_c < 50 kV/cm at a frequency of 10 Hz. Furthermore, the grain growth for the PZT/SUS formed by AD technique and annealed by fiber laser irradiation was occurred within the laser spot size.     

Specialty Yb fiber amplifier for microchip Nd laser: Towards ∼1-mJ/1-ns output at kHz-range repetition rate

We demonstrate and optimize, for a mJ/ns release at the wavelength 1.064 μm, the operation of a compact laser system designed in the form of a hybrid, active-passive, Q-switched Nd³⁺:YAG/Cr⁴⁺:YAG microchip laser seeding an Yb-doped specialty multi-port fiber amplifier. As the result of the amplifier optimization, ∼1 mJ, ∼1 ns, almost single-mode pulses at a 1-10-kHz repetition rate are achieved, given by a gain factor of ∼19 dB for an 11-μJ input from the microchip laser. Meanwhile, a lower pulse energy, ∼120 μJ, but a much higher gain (∼25 dB) are eligible for the less powerful (0.35 μJ) input pulses.     

Simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm

Considering the reabsorption loss of the quasi-three level system and the unsaturable loss of the saturable absorber, we obtained the operating condition of a diode-pumped simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm. The dual-wavelength pulsed laser was realized successfully through adaptive coating design of the cavity mirrors. As much as 1.6 W total average output power of the dual-wavelength at 1.06 μm and 946 nm was achieved at the incident pump power of 14.2 W with an optical conversion efficiency of 11.3%.     

Optical emission spectroscopy investigation of an ultra-short laser induced titanium plasma reheated by a ns laser pulse

The dynamics of a titanium plasma species, induced in air by coupling a fs-ablating laser pulse with an orthogonal ns-reheating laser source placed at the fixed distance of 1.0 mm from the target surface, has been followed by temporally resolved emission spectroscopy. The temporal evolutions of plasma features such as excitation temperatures and electron densities have been evaluated by using two different laser energies of the first fs-ablating laser pulse (0.8 mJ and 3.0 mJ). Optimum inter-pulse delay times, experimentally determined, of 250 μs and 500 μs were used for the fs laser energy of 3.0 mJ and 0.8 mJ, respectively. By experimental inspections of the main plasma species electronic transitions so obtained, a strong enhancement was evaluated up to one and two orders of magnitude for Ti(I) and Ti(II), respectively. Independently from the fs laser energy employed, the plasma features showed the same temporal behaviour implying that the ns-reheating characteristics of this process belong to the reheating mechanism itself. The experimental results have been discussed and the excited species evolutions and elementary processes involved, as well as, the local thermodynamic equilibrium departures, have been outlined.     

Parametric analysis of the selective laser melting process

Selective laser sintering/melting (SLS/SLM) technology is used for manufacturing net-shaped objects from commercial Inox 904L powder with ≤20 μm particle size. Experiments were carried out on PHENIX-PM100 machine equipped with a 50 W cw fiber laser. Powder is layered by a roller over the surface of a 100 mm-diameter build cylinder. Optimal parameters of layer thickness and power input per unit speed for SLM were determined. It was shown that the greater the value of P/V ratio is, the larger is the remelted line (called as “vector”). Influence of the shifting of consecutive single vectors on the process of forming the first layer was studied. Different strategies for forming objects with less than 1 mm-sized inner structures were tested, as, for example, forming a 20 mm × 20 mm × 5 mm box with 140 μm-thick inner compartment walls.     

High efficiency and high energy parametric wavelength conversion using a large aperture periodically poled MgO:LiNbO3

We have demonstrated an efficient high energy 2 μm laser generation with a 36 mm long large aperture 5 mol% MgO-doped periodically poled LiNbO₃ (PPMgLN) nonlinear optical crystal. A high power Q-switched Nd:YAG laser (1.064 μm) was used to pump the quasi-phase matched (QPM) optical parametric oscillator (OPO). A total output energy of 186 mJ with 58% slope efficiency was obtained in two separate beams at 2 μm.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

41 mW high average power picosecond 177.3 nm laser by second-harmonic generation in KBBF

We report on the generation of high average power, high repetition rate, and picosecond (ps) deep-ultraviolet (DUV) 177.3 nm laser. The DUV laser is produced by second-harmonic generation of a frequency-tripled mode-locked Nd: YVO₄ laser (<15 ps, 80 MHz) with KBBF nonlinear crystal. The influence of different fundamental beam diameters on DUV output power and KBBF-SHG conversion efficiency are investigated. Under the 355 nm pump power of 7.5 W with beam diameter of 145 μm, 41 mW DUV output at 177.3 nm is obtained. To our knowledge, this is the highest average power for the 177.3 nm laser. Our results provide a power scaling by three times with respect to previous best works.     

Long-period fiber-gratings produced by exposure with a low-pressure mercury lamp and their sensing characteristics

A new production method of long-period fiber-gratings using neither a laser nor a fine-positioning system was proposed. A low-pressure mercury lamp emitting 254 nm ultraviolet light was used as a light source. Hydrogen-loaded Ge-B co-doped fiber was exposed to the emission of the lamp through an amplitude mask. A coupling loss up to 23 dB was obtained for a grating period of 212 μm. The maximum coupling loss for a grating period of 460 μm was 18 dB. The growth rate of the refractive index change by mercury-lamp exposure was 1.3 × 10⁻⁴/h. The temperature and strain characteristics were measured and compared with those fabricated by excimer-laser exposure. The temperature and strain sensitivities of long-period gratings with a period of 212 μm were higher than those of 460 μm. The temperature and strain sensitivities of those by mercury-lamp exposure were almost equal to those by excimer-laser exposure of the same fiber. The sensitivities of those by excimer-laser exposure of non-loaded fiber were higher than those of hydrogen-loaded fiber by mercury-lamp or excimer-laser exposures except for the temperature sensitivity of a grating period of 460 μm.     

Thermal-lens measurement in a side-pumped 1.3 μm Nd:YVO4 bounce laser

We investigated thermal-lensing effects in a side-pumped 1.3 μm Nd:YVO₄ slab laser amplifier having a bounce geometry. The thermal-lens power during 1.3 μm laser action was 1.3-times larger than that without laser action. Excited-state absorption is the main cause for increased heat loading during laser operation. The heat-loading formula in end-pumped 1.3 μm vanadate lasers having low Nd doping can be extended to account for heat generation in diode-side-pumped vanadate bounce lasers having high Nd doping.     

Practical optical frequency measurement system around 1.5 μm based on an acetylene-stabilized laser-locked optical frequency comb

We have developed a practical and precise frequency measurement system at 1.5 μm telecommunication band. An electro-optic-modulator based optical frequency comb is phase-locked to a dither-free acetylene-stabilized laser to realize an optical frequency comb with frequency uncertainty of 10 kHz (5 × 10⁻¹¹) and the linewidth of 15 kHz. The present frequency comb can be also used as an optical frequency reference grid defined by ITU-T (International Telecommunication Union, Telecommunication Standardization Sector). Using the present frequency measurement system, we have demonstrated the first optical frequency measurement of ¹²C¹⁶O overtone absorption lines around 1.56 μm with the uncertainty of lower than 900 kHz.     

Self-Q-switching and mode-locking in an all-fiber Er/Yb co-doped fiber ring laser

Using a section of un-pumped Er/Yb co-doped fiber (EYDF) as a saturable absorber, Self-Q-switching and self-mode-locking pulses have been obtained in an all-fiber EYDF ring laser. Such laser is with the self-Q-switched pulse threshold of 135.22 mW, the repetition rate of approximately 22.2 kHz, and the pulse duration of ∼2.8 μs, respectively. The self-mode-locked threshold is 591.8 mW. By incorporating the saturable absorption in an un-pumped EYDF and a Mach-Zehnder interferometer, when the pump power is increased to 1242.9 mW, the continuous-wave (CW) mode-locking with the pulse width of 26 ns has also been demonstrated experimentally for the first time.     

Tunable, μs-pulsed ytterbium fiber laser system with a linewidth below 2.7 GHz

We report on a widely tunable, pulsed laser system with narrow spectral linewidth based on a continuous wave ytterbium fiber oscillator, a pulse shaper and a power amplifier stage. The system is tunable from 1055 nm to 1085 nm and provides a maximum pulse energy of 155 μJ with a pulse duration of 1-5 μs. The linewidth is less than 2.7 GHz over the whole tuning range.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Nanostructures on SiC surface created by laser microablation

Silicon carbide (SiC), as it is well-known, is inaccessible to usual methods of technological processing. Consequently, it is important to search for alternative technologies of processing SiC, including laser processing, and to study the accompanying physical processes. The work deals with the investigation of pulsed laser radiation influence on the surface of 6H-SiC crystal. The calculated temperature profile of SiC under laser irradiation is shown. Structural changes in surface and near-surface layers of SiC were studied by atomic force microscopy images, photoluminescence, Raman spectra and field emission current-voltage characteristics of initial and irradiated surfaces. It is shown that the cone-shaped nanostructures with typical dimension of 100-200 nm height and 5-10 nm width at the edge are formed on SiC surface under nitrogen laser exposure (λ = 0.337 μm, t_p = 7 ns, E_p = 1.5 mJ). The average values of threshold energy density 〈W_thn〉 at which formation of nanostructures starts on the 0 0 0 1 and surfaces of n-type 6H-SiC(N), nitrogen concentration n_N ≅ 2 × 10¹⁸ cm⁻³, are determined to be 3.5 J/cm² and 3.0 J/cm², respectively. The field emission appeared only after laser irradiation of the surface at threshold voltage of 1000 V at currents from 0.7 μA to 0.7 mA. The main role of the thermogradient effect in the processes of mass transfer in prior to ablation stages of nanostructure formation under UV laser irradiation (LI) was determined. We ascertained that the residual tensile stresses appear on SiC surface as a result of laser microablation. The nanostructures obtained could be applied in the field of sensor and emitting extreme electronic devices.     

Laser-generated surface acoustic waves in a ring-shaped waveguide resonator

Surface acoustic wave (SAW) waveguide resonator is formed by a ring-shaped strip of copper 10 μm wide and ∼130 μm in diameter embedded into a 0.8 μm thick layer of silica on a silicon wafer. SAWs are excited at one side of the copper ring by a short laser pulse focused into a spatially periodic pattern and detected via diffraction of the probe laser beam overlapped with the excitation spot. SAW wavepackets with central frequency 460 MHz travel around the ring and are detected each time they make a full circle and pass trough the probe spot. Potential applications of ring resonators for SAWs are discussed.     

Influence of surface effects on the performance of lead-niobium-germanate optical waveguides

Lead-niobium-germanate planar waveguides have been produced by pulsed laser deposition. The composition of the waveguides is found to be relatively weakly dependent on the laser fluence, while their surface morphology is affected dramatically. Smooth surfaces are obtained for a narrow fluence range centered at 2.0 J/cm², while particulates having typical diameters of <0.5 μm or droplets with typical diameters of <10 μm are observed at lower and higher fluences, respectively. The refractive index of the waveguides increases with fluence up to 2.1 at 2.0 J/cm², which is close to the value of the bulk glass, and remains constant at higher fluences. Propagation losses show instead a minimum (≈6.5 dB/cm) at 2.0 J/cm². The characteristics of the ablation process that leads to the ejection of solid particulates or molten droplets as well as the increase of the waveguides density on increasing the fluence are discussed to be responsible for the observed optical behavior.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.