Growth and spectral properties of Tm/Er:NaGd(MoO4)2 single crystal

The Tm³⁺/Er³⁺:NaGd(MoO₄)₂ crystal with dimensions of Φ22×30 mm³ was grown by Czochralski method. Polarized spectra and fluorescence lifetime for the ⁴I_13/2(Er³⁺)→⁴I_15/2(Er³⁺) transition at room temperature were investigated. Based on the Judd-Ofelt theory, the spontaneous transition probabilities, the fluorescent branching ratios and the radiative lifetimes were calculated. The fluorescence lifetime was measured to be 1.81 ms. The detailed excited-transition mechanism with 800 nm radiation is also discussed.     

Structural and spectroscopic studies of Lu2O3/Eu nanocrystallites embedded in SiO2 sol-gel ceramics

Preparation and optical properties of Lu₂O₃/Eu³⁺ nanocrystals embedded in silica gel glass are described. The structure of the obtained ceramics was determined by XRD and transmission electron microscopy. It was found that with increasing sintering temperature the Lu₂O₃/Eu³⁺ nanocrystallites underwent transformation into monoclinic Lu₂Si₂O₇ nanocrystallites. The fluorescence properties were investigated as a function of thermal treatment of the samples. It was found that after sintering at 1250 °C the fluorescence lifetime increased to 1.5 ms at room temperature. The material studied in this work exhibits a very high intensity of fluorescence with potentials for display application.     

Waveguiding and photoluminescence in Er-doped Ta2O5 planar waveguides

The optimization of erbium-doped Ta₂O₅ thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4 dB/cm at 633 nm have been obtained before post-annealing. The samples, when pumped at 980 nm yielded a broad photoluminescence spectrum (FWHM∼50 nm) centred at 1534 nm, corresponding to ⁴I_13/2-⁴I_15/2 transition of Er³⁺ ion. The samples were annealed up to 600 °C and both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4 ms was achieved, yielding promising results for compact waveguide amplifiers.     

Optical detection of near infrared femtosecond laser-heating of Er-doped ZnO-Nb2O5-TeO2 glass by green up-conversion fluorescence of Er ions

The green up-conversion fluorescence of Er³⁺ ions doped in an nonlinear optical ZnO-Nb₂O₅-TeO₂ glass was observed by using 800 nm excitation from a regenerative femtosecond (fs) Ti:Sapphire laser. The detailed analysis on two fluorescence lines at 526 nm (²H_11/2-⁴I_15/2) and 548 nm (⁴S_3/2-⁴I_15/2) revealed the fs laser heating of the multi-component TeO₂-based glass, which was possibly due to its nonlinear absorption of the host glass via the imaginary part of the third-order optical susceptibility (χ⁽³⁾). The result was compared with that of a Er³⁺-doped aluminosilicate glass under the same irradiation condition. When the fs laser was irradiated to the multicomponent TeO₂-based glass in the power density of 150 TW/cm², the laser spot was heated up to ∼520 K, which however was still less than the glass transition temperature (T_g=688 K). This technique provides a useful sensing method of laser spot temperature even inside transparent materials.     

Effect of Ce on the spectroscopic properties in Er doped TeO2-GeO2-Nb2O5-Li2O glasses

The Ce³⁺ ion was introduced into Er³⁺ doped TeO₂-GeO₂-Nb₂O₅-Li₂O (TGNL) glass to improve the 1.5 μm fluorescence characteristics. As increasing of Ce³⁺ concentration, the lifetime of Er³⁺:⁴I_11/2 level is shortened form 360 to 225 μs, while the Er³⁺:⁴I_13/2 level remains unchanged. Accordingly, the upconversion fluorescence (blue, green and red) was quenched. Improved 1.5 μm emission is obtained and the reason is ascribed to the increase of nonradiative rate between the ⁴I_11/2 and ⁴I_13/2 level of the Er³⁺ ions.     

Spectroscopic investigation of Tm:TeO2-WO3 glass

We studied the spectroscopic characteristics of telluride glass with the host composition (0.85)TeO₂-(0.15)WO₃, containing 0.25 and 1.0 mol% thulium oxide (Tm₂O₃). By analyzing the absorption spectra with the Judd-Ofelt theory, the average radiative lifetimes of 305±7.5 μs and 1.95±0.02 ms were determined for the ³F₄ and ³H₄ levels, respectively. Measured fluorescence lifetime of the ³F₄ level decreased from 218 to 51 μs for the 0.25 and 1.0 mol% Tm₂O₃ doped samples, respectively, indicating the effect of boosted non-radiative decay at higher doping concentrations. A similar trend was observed for the ³H₄ level, where the fluorescence lifetime decreased from 1.86 ms to 350 μs at these concentrations. The quenching of the 1460 nm (³F₄→³H₄) emission in favor of the 1800 nm (³H₄→³H₆) emission due to cross relaxation was further evident in the fluorescence spectra of the samples. The calculated stimulated emission cross sections (3.73±0.1×10⁻²¹ cm² at 1460 nm and 6.57±0.07×10⁻²¹ cm² at 1808 nm) reveal the potential importance of the Tm³⁺:(0.85)TeO₂-(0.15)WO₃ glass for applications in fiber-optic amplifiers and fiber lasers.     

Role of Ti in the luminescence process of Al2O3:Si,Ti

Al₂O₃:Si,Ti, prepared under oxidizing condition at high temperature, gives PL emission around 430 nm when excited with 240 nm. The Al₂O₃:C, TL/OSL phosphor, also shows emission around 430 nm, which corresponds to characteristic emission of F-center. Thus, to identify the exact nature of luminescent center in Al₂O₃:Si,Ti, fluorescence lifetime measurement studies were carried out along with the PL,TL and OSL studies. The PL and TL in Al₂O₃:Si,Ti show emission around 430 nm and the time-resolved fluorescence studies show lifetime of about 43 μs for the 430 nm emission, which is much smaller than the reported lifetime of ∼35 ms for the 430 nm emission (F-center emission) in Al₂O₃:C phosphor. Therefore, the emission observed in Al₂O₃:Si,Ti phosphor was assigned to Ti⁴⁺ charge transfer transition. Fluorescence studies of Al₂O₃:Si,Ti do not show any traces of F and F⁺ centers. Also, Ti⁴⁺ does not show any change in the charge state after gamma-irradiation. On the basis of the above studies, a mechanism for TSL/OSL process in Al₂O₃:Si,Ti is proposed.     

The ν1 + 3ν2 + 3ν3 and 4ν1 + ν2 + ν3 bands of ozone by CW-cavity ring down spectroscopy between 5900 and 5960 cm

The absorption spectrum of ozone, ¹⁶O₃, has been recorded in the 5903-5960 cm⁻¹ region by high sensitivity CW-cavity ring down spectroscopy (α_min ∼ 5 × 10⁻¹⁰ cm⁻¹). The ν₁ + 3ν₂ + 3ν₃ and 4ν₁ + ν₂ + ν₃ A-type bands centred at 5919.15 and 5947.07 cm⁻¹ were newly observed. A set of 173 and 168 energy levels could be experimentally determined for the (1 3 3) and (4 1 1) states, respectively. Except for a few K_a = 5 levels of the (4 1 1) state, the rotational structure of the two states was found mostly unperturbed. The spectroscopic parameters were determined from a fit of the corresponding line positions by considering the (1 3 3) and (4 1 1) states as isolated. The determined effective Hamiltonian and transition moment operators were used to generate a list of 785 transitions given as Supplementary Material.     

Fluorescence enhancement of oxide fluoride glass co-doped with TbF3 and SmF3

The fluorescence property of xTbF₃-BaF₂-AlF₃-GeO₂+ySmF₃ (x=0.01-40 mol%, y=0-5 wt%) glasses were investigated. The enhancement of Sm³⁺ fluorescence was recognized in the presence of Tb³⁺. Increasing Tb³⁺ content, the emission color changed from green to orange. When the intensity of fluorescence at 540 nm originated from Tb³⁺ is compared with that at 600 nm originated from Sm³⁺, the information about the concentration quenching of Tb³⁺ and Sm³⁺ was obtained. From these results, rare earth ions were dispersed identically in the glasses. After heating to 673 K or cooling to 77 K, the emission color of 20TbF₃-20BaF₂-10AlF₃-50GeO₂/mol%+0.05 wt% SmF₃ glass was reversibly changed from orange to green. In addition, while the emission from 10TbF₃-20BaF₂-10AlF₃-60GeO₂+0.01 wt% SmF₃ glass was green, its crystallized sample, prepared by annealing at 1073 K, exhibited an orange emission due to Sm³⁺ at room temperature.     

Hydroxylated α-Al2O3 (0 0 0 1) surfaces and metal/α-Al2O3 (0 0 0 1) interfaces

X-ray photoelectron spectroscopy was applied to study the hydroxylation of α-Al₂O₃ (0 0 0 1) surfaces and the stability of surface OH groups. The evolution of interfacial chemistry of the α-Al₂O₃ (0 0 0 1) surfaces and metal/α-Al₂O₃ (0 0 0 1) interfaces are well illustrated via modifications of the surface O1s spectra. Clean hydroxylated surfaces are obtained through water- and oxygen plasma treatment at room temperature. The surface OH groups of the hydroxylated surface are very sensitive to electron beam illumination, Ar⁺ sputtering, UHV heating, and adsorption of reactive metals. The transformation of a hydroxylated surface to an Al-terminated surface occurs by high temperature annealing or Al deposition.     

Improvement of Er:I11/2→Ce:F5/2 energy transfer rate in Er/Ce co-doped TeO2-ZnO-Na2O-Nb2O5 glasses

The B₂O₃ component was introduced into Er³⁺/Ce³⁺ co-doped TeO₂-ZnO-Na₂O-Nb₂O₅ glass to improve energy transfer rate of Er³⁺:⁴I_11/2→Ce³⁺:²F_5/2 phonon-assisted cross-relaxation process. With the 6 mol% substitution of B₂O₃ for TeO₂, the energy transfer rate increased from 1300 to 1831 s⁻¹ and the fluorescence intensity increased by about 13.4%. However, the more B₂O₃ substitution in the same glass system reduced the quantum efficiency of Er³⁺:⁴I_13/2→⁴I_15/2 transition due to the higher OH⁻ group concentration. The results show that an appropriate amount of B₂O₃ component can be used to improve the phonon-assisted energy transfer rate and enhance 1.53 μm fluorescence emission by increasing the phonon energy of host glass. The effect of B₂O₃ on the energy transfer process, the lifetimes of the ⁴I_11/2 and ⁴I_13/2 levels, and the upconversion emission have also been investigated.     

Characterization of Er-doped fluoride glass ceramics waveguides containing LaF3 nanocrystals

Highly Er³⁺-doped fluoride glass ceramics planar waveguides containing LaF₃ nanocrystals have been fabricated by physical vapor deposition (PVD). The solubility of Er³⁺ in the segregated nanocrystals can reach 30 mol% which is much larger than the value found in LaF₃-oxide glass ceramics. A quantitative analysis of the photoluminescence of the 1.54 μm emission band of Er³⁺ ions has demonstrated that erbium ions are partitioned in both crystals and vitreous phase. The short lifetime (2.2 ms) measured for erbium incorporated in LaF₃ crystal lattice is a consequence of concentration quenching while the lifetime is close to 10 ms in the glassy phase. The emission bandwidth has been found to be greater than that of the precursor glass (71 nm at the half-height width). The high Er³⁺ concentration and spectral width could make this nanostructured fluoride material suitable for planar amplifier in the C telecommunication band.     

Conversion of infrared radiation into visible emission in NaY(WO4)2:Yb, Ho crystal

The spectroscopic characteristics and fluorescence dynamics for Yb³⁺/Ho³⁺:NaY(WO₄)₂ crystal were investigated. The parameters of oscillator strengths, the spontaneous transition probabilities, the fluorescence branching ratios, the radiative lifetimes and the stimulated emission cross sections have been calculated based on Judd-Ofelt theory and Füchtbauer-Ladenburg method. The energy transfer efficiency from Yb³⁺ to Ho³⁺ was 65.85%. The green emission (530-570 nm) corresponding to (⁵F₄, ⁵S₂)→⁵I₈ transition, red emission (640-670 nm) due to ⁵F₅→⁵I₈ transition and NIR emission (740-770 nm) attributed to (⁵F₄, ⁵S₂)→⁵I₇ transition were observed on 974 nm excitation at room temperature. Under low pump power, the intensity of green light emission is weaker than that of the red light, while under high pump power, the case is on the contrary. The upconversion is based on the two-photon process either the energy transfer from Yb³⁺ ions or by the excited state absorption. The proposed mechanisms of upconversion emissions were provided.     

Investigation on spectral features of tungsten ions in PbO-Bi2O3-As2O3 glass matrix

Lead bismuth arsenate glasses mixed with different concentrations of WO₃ (ranging from 0 to 6.0 mol%) were synthesized. Differential thermal analysis (DTA), optical absorption, ESR and IR spectral studies have been carried out. The results of DTA have indicated that there is a gradual decrease in the resistance of the glass against devitrification with increase in the concentration of WO₃ upto 4.0 mol%.The optical absorption spectra of these glasses exhibited a relatively broad band peaking at about 880 nm identified due to d_xy→d_x²_−y² transition of W⁵⁺ ions; this band is observed to be more intense in the spectrum of glass containing 4.0 mol% of WO₃. Further, two prominent kinks attributed to ³P₀→¹S₀, ¹D₂ transitions of Bi³⁺ ions have also been located in the absorption spectra. The ESR spectra of these glasses recorded at room temperature exhibited an asymmetric signal at g_⊥∼1.71 and g_ll∼1.61. The intensity of the signal is observed to be maximal for the spectrum of the glass W₄. The quantitative analysis of optical absorption and ESR spectral studies have indicated that there is a maximum reduction of tungsten ions from W⁶⁺ state to W⁵⁺ state in the glass containing 4.0 mol% of WO₃. The IR spectral studies have indicated that there is a increasing degree of disorder in the glass network with increase in the concentration of WO₃ upto 4.0 mol%.     

Impacts of compressive strain on phase diagram of epitaxial Pr0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)

Series Pr_0.5Sr_0.5MnO₃ (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO₃ using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition at a temperature of ∼190 K. Such a FMM-AFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain.     

Characterization of hybrid electrolytes prepared from the Li2S-P2S5 glasses and alkanediols

Inorganic-organic hybrid electrolytes were prepared by the mechanochemical method using the Li⁺ ion conductive 70Li₂S·30P₂S₅ glass and various alkanediols. Local structure of the prepared electrolytes was analyzed by FT-IR and Raman spectroscopy. The effects of the proportion and chain length of alkanediols on conductivity of the hybrid electrolytes were investigated. The hybrid electrolyte with 2 mol.% of 1,4-butanediol exhibited the conductivity of 9.7 × 10^− 5 S cm^− 1 at room temperature and the unity of lithium ion transference number. The use of alkanediols with shorter chain length was effective in increasing conductivity of hybrid electrolytes. The electrolyte using ethyleneglycol showed the highest conductivity of 1.1 × 10^− 4 S cm^− 1 at room temperature. Lowering glass transition temperature by incorporation of alkanediols is responsible for the enhancement of conductivity of hybrid electrolytes.     

Investigation on nonradiative decay of I13/2→I15/2 transition of Er-doped oxide glasses

Nonradiative decay of ⁴I_13/2→⁴I_15/2 transition of Er³⁺ has been investigated in a series of oxide glasses. For Er³⁺-doped glass samples, the Judd-Ofelt analysis on absorption spectra was performed and the fluorescence lifetime was determined by extrapolating to zero Er³⁺ concentration limit. Infrared spectra were measured in order to investigate the influence of OH⁻ groups in different glasses. The effects of glass matrix on the decay rate were discussed from the viewpoint of phonon energy, variations of effective fields, and OH⁻ groups. Compared to other glasses, phosphate glass presents low quantum efficiency and large nonradiative decay rate due to its high phonon energy and hygroscopic behavior.     

Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)

Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in reactive atmospheres of O₂ and Ar, at working pressure of 8 × 10⁻² Pa. Film stoichiometry was determined in the range from Fe_2.95O₄ to Fe_2.97O₄. Randomly oriented polycrystalline thin films were grown on GaAs(1 0 0) while for the Al₂O₃(0 0 0 1) substrates the films developed a (1 1 1) preferred orientation. Interfacial Fe³⁺ diffusion was found for both substrates affecting the magnetic behaviour. The temperature dependence of the resistance and magnetoresistance of the films were measured for fields up to 6 T. Negative magnetoresistance values of ∼5% at room temperature and ∼10% at 90 K were obtained for the as-deposited magnetite films either on GaAs(1 0 0) or Al₂O₃(0 0 0 1).     

Spectra and intensity parameters of Tm ion in YAlO3 crystal

High quality Tm-doped YAlO₃ (Tm:YAlO₃) single crystals were obtained along crystallographic b-axis by the Czochralski technique. Optical absorption and fluorescence spectra for Tm³⁺ in YAlO₃ crystals were investigated at room temperature. Based on Judd-Ofelt approach, the intensity parameters Ω_t (t = 2, 4, 6) of Tm:YAlO₃ were calculated to be Ω₂ = 0.93 × 10⁻²⁰  cm², Ω₄ = 2.23 × 10⁻²⁰ cm², and Ω₆ = 1.12 × 10⁻²⁰ cm². The spectral parameters such as experimental and theoretical oscillator strengths, radiative transition probabilities, radiative lifetime and the fluorescence branching ratio were also obtained. All results indicate that Tm:YAlO₃ is a potential candidate for compact, efficient mid-infrared lasers with laser diode pumping.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.