Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Q-switched and continuous-wave mode-locking of a diode-pumped Nd:Gd0.64Y0.36VO4−Cr4+:YAG laser

We report on a diode-pumped passively mode-locked Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. Q-switched mode locking (QML) with 90% modulation depth was obtained. The peak power of the mode-locked pulse near the maximum of the Q-switched envelope was estimated to be about 1.7 MW at the pump power of 12 W. Besides QML, continuous-wave mode locking was also experimentally realized, for the first time to our knowledge, in the laser under a strong intracavity pulse energy fluence. The mode-locked pulse width is about 2.96 ps at a repetition rate of 161.3 MHz.     

Self-Q-switched and mode-locked Nd,Cr:YAG laser with 6.52-W average output power

Simultaneous self-Q-switched and mode-locked have been demonstrated in a diode-pumped Nd,Cr:YAG laser. For the first time as we know, almost 100% modulation depth has been achieved at an intracavity intensity of 5.6 × 10⁵ W/cm². The maximum average output power of 6.52 W corresponding to a slope efficiency of 30% is obtained at 1064 nm. The laser produces high-quality pulses in a TEM₀₀-mode at the pump power of 16.5 W. The pulse duration of the mode-locked pulses is about 600 ps with 136 MHz repetition rate.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Analysis of a laser-diode end-pumped intracavity frequency-doubled passively Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP laser with a semiconductor saturable absorber

A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO₄/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz.     

High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber

The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO₄ laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about 160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence, modulation depth, recovery time and damage threshold in semiconductors.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Low-threshold diode-pumped CW passively mode-locked Nd:YVO4 laser

A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO₄ solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz.     

Passive mode locking of a diode-pumped Nd:Gd 0.64 Y 0.36 VO 4 laser with a GaAs saturable absorber mirror

We report a diode-pumped Nd:Gd_0.64Y_0.36VO₄ laser passively mode locked by using a GaAs saturable absorber mirror. Both the Q-switched and continuous-wave (CW) mode locking were experimentally realized. The CW mode-locked pulses have a pulse width of about 8.8 ps at a repetition rate of 161.3 MHz. Limited by the available pump power, a maximum output power of 2.47 W was obtained for the CW mode-locked pulses with a slope efficiency of about 26.6%.     

Theoretical and experimental study of single mode-locking pulse generation with low repetition rate in a dual-loss-modulated QML YVO4/Nd:YVO4 laser with EO and GaAs

Using electro-optic (EO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser at 1.06 μm is realized. The experimental results show that the number of the mode-locking pulses underneath the Q-switched envelope decreased with increasing pump power. With an output coupling of 6.5 %, the single mode-locking pulse underneath the Q-switched envelope with 1 kHz repetition rate was obtained when the pump power exceeded 4.65 W. At a pump power of 8.25 W for an output coupling of 10 %, a stable mode-locking pulse train at a repetition rate of 1 kHz was achieved with pulse energy as high as 582 μJ and pulse duration of about 580 ps, corresponding to a peak power of 1 MW. Using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled rate equations for diode-pumped doubly QML YVO₄/Nd:YVO₄ laser are given and the numerical solutions of the equations are basically in accordance with the experimental results.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO₄ laser. With a 350-μm-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.