Effect of amplified spontaneous emission on semiconductor optical amplifier based all-optical logic

The performances of all-optical logic gates XOR, AND, OR, NOR and NAND based on semiconductor optical amplifier (SOA) have been simulated including the effects of amplified spontaneous emission (ASE). For the parameters used, all-optical logic gates using SOA are capable of operating at speed of 80 Gb/s.     

All-optical logic gates based on two-photon absorption in semiconductor optical amplifiers

When the two-photon absorption of a high intensity pump beam takes place in a semiconductor optical amplifier there is an associated fast phase change of a weak probe signal. A scheme to realize fast all-optical XOR logic function using two-photon absorption induced phase change has been analyzed. Rate equations for semiconductor optical amplifiers, for input data signals with high intensity, configured in the form of a Mach–Zehnder interferometer has been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The model shows that both XOR operation and pseudo-random binary sequence generation at 250 Gb/s with good signal to noise ratio is feasible.     

All-optical XNOR and AND gates simultaneously realized in a single semiconductor optical amplifier with improved dynamics

All-optical XNOR and AND logic gates using four-wave mixing (FWM) and cross-gain modulation (XGM) in a single semiconductor optical amplifier (SOA) with improved dynamics are simultaneously realized. By numerical simulation, the effects of the input optical wave powers and injection current on the critical factors of the logic gate performances, such as the ON--OFF contrast ratio, the power-output level of the logic `1', and the difference between power outputs of the logic `1', are investigated in detail. In addition, the effect of the counter-propagating CW pump on the gain recovery is analysed.     

All optical logic NAND gate based on two-photon absorption in semiconductor optical amplifiers

We propose a new scheme to realize all optical logic NAND operating at high speeds up to 250 Gb/s utilizing the ultrafast phase response during two-photon absorption (TPA) process in semiconductor optical amplifiers (SOA). NAND gate is important because other Boolean logic elements and circuits can be realized using NAND gates as basic building blocks. Rate equations for semiconductor optical amplifiers (for input data signals with high intensity) configured in the form of a Mach-Zehnder interferometer have been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The performance of this scheme is analyzed by calculating the quality factor of the resulting data streams. The results show that both AND and NAND operations at 250 Gb/s with good signal to noise ratio are feasible.     

All-optical microwave notch filter with flat passband based on semiconductor optical amplifier

An all-optical filter structure for interference mitigation of microwave signals is proposed and demonstrated. The structure is based on a recirculating delay line loop (RDLL) and a fiber Bragg grating. The RDLL is comprised of a semiconductor optical amplifier (SOA) followed by a tunable narrowband optical filter and an optical variable delay line. Negative tap is generated using wavelength conversion based on the cross-gain modulation of amplified spontaneous emission spectrum of the SOA. A negative band-pass filter and a broadband all-pass filter are synthesized to achieve a narrow notch filter with flat passband which can excise interference with minimal impact on the wanted signal over a wide microwave range. Experimental results show the notch rejection ratio of 30 dB, good shape factor and tunability.     

基于单个半导体光放大器的高速多功能逻辑门

采用半导体光放大器(SOA)中的非线性效应可以实现多种多样的高速全光信号处理. 利用SOA的非线性效应(包括四波混频、交叉增益调制、瞬态交叉相位调制等)实现了多种功能的逻辑运算,包括“与”、“或非”、“同或”、“或”和“非”. 由于SOA用于全光信号处理的调制速率受到增益恢复时间较慢的限制而无法实现高速的信号处理,在SOA后面级联一个带宽为0.32nm的失谐滤波器可以提高SOA的工作速率,仅用一个SOA实现了40Gbit/s的多功能逻辑门. 关键词： 半导体光放大器 全光逻辑门 瞬态交叉相位调制     

40 Gb/s all-optical logic NOR and OR gates using a semiconductor optical amplifier: Experimental demonstration and theoretical analysis

We experimentally and theoretically demonstrate 40 Gb/s all-optical logic NOR and OR gates based on a semiconductor optical amplifier (SOA) and a blue shifted optical bandpass filter (OBF). Two kinds of data formats are discussed, namely return-to-zero (RZ) format and nonreturn-to-zero (NRZ) format. The logic NOR and OR functions of RZ format are realized at the OBF detuning of −0.22 nm and −0.44 nm, respectively. The logic NOR function of NRZ format is realized at the OBF detuning of −0.24 nm. The simulation is in good agreement with the experimental results when the linewidth enhancement factor is 5.5. The simulation also shows that the SOA with large linewidth enhancement factor is preferred to achieve NOR and OR functions with good performance. The input data signal is of good pulsewidth-tolerance for NOR function, whereas not for OR function. The high Q factor could be obtained at narrow pulses injection.     

All-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity

A novel scheme for all-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity is proposed and investigated numerically. The results show, for a 2.5 GHz driving pulse train, it can be generated 5-25 GHz repetition rate pulse trains with low clock amplitude jitter, polarization independence and high peak power. Furthermore, the extraction of the clock signal from a pseudorandom bit sequence signal can be realized based on the proposed scheme.     

All-optical reconfigurable logic operations with the help of terahertz optical asymmetric demultiplexer

An all-optical reconfigurable logic operation essentially constitutes a key technology for avoiding complex and speed limited optoelectronics conversions and performing various processing tasks. All-optical reconfigurable logic operations with the help of terahertz optical asymmetric demultiplexer (TOAD) is proposed and described. The paper describes the all-optical reconfigurable logic operations using a set of all-optical multiplexer and optical switches. We have tried to exploit the advantages of TOAD-based switch to design an integrated all-optical circuit which can perform the different logic operations AND, XOR, NOR and NOT. Numerical simulation confirming described methods is given in this paper.     

Microwave photonic filter with multiple taps based on single semiconductor optical amplifier

A novel technique to implement a microwave photonic filter structure with multiple taps and arbitrary frequency response is presented. The proposed filter is based on Four-Wave Mixing (FWM) and Cross-Gain Modulation (XGM) in a semiconductor optical amplifier (SOA). Two-tap notch filter and three-tap bandpass filter with arbitrary bipolar tap generation, high rejection ratio, and widely tunability are successfully demonstrated in the experiment. Extensions to this concept by adding new probe light to provide more taps and improve the bandwidth to high frequency regime are also discussed.     

All-optical differentiator based on cross-gain modulation in semiconductor optical amplifier

A novel scheme for carrying out all-optical intensity differentiation is proposed and demonstrated based on the cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA). Because of the XGM, the mathematical definition of differentiation can be expressed by the combined power of the amplified pump pulse and the delayed modulated probe pulse at the output of the SOA. The final waveform and error evolution versus relative time delay between two pulses is investigated. Interestingly enough, it is shown that the acquisition of good differentiation is possible under zero time delay. A further study of zero time delay has been performed for various data rates and shows that the carrier recovery time of the SOA is a speed-limiting factor of the scheme.     

All-optical NOT and XOR logic operation at 2.5 Gb／s based on semiconductor optical amplifier loop mirror

All-optical XOR and NOT logic operations based on semiconductor optical amplifier loop mirror (SLALOM) aresimultaneously demonstrated theoretically and experimentally. Based on a segmented semiconductor optical amplifier model, the all-optical logic operation process is simulated theoretically. In an experimental study, 2.5 Gb/s all-optical XOR operation was achieved in the output port of SLALOM, while all-optical NOT operation was achieved in the input port through a circulator at the same time.     

Theoretical analysis and performance investigation of ultrafast all-optical Boolean XOR gate with semiconductor optical amplifier-assisted Sagnac interferometer

A comprehensive theoretical model of an ultrafast all-optical Boolean XOR gate implemented with a semiconductor optical amplifier (SOA)-assisted Sagnac interferometer is presented. The model accounts for the SOA small signal gain, linewidth enhancement factor and carrier lifetime, the switching pulses energy and width and the Sagnac loop asymmetry. By undertaking a detailed numerical simulation, the influence of these key parameters on the metrics that determine the quality of switching is thoroughly investigated and simple design rules are extracted for their proper selection so as to ensure optimum operation. The obtained results are in good agreement with the published experimental measurements and confirm the feasibility of realizing the gate at 10 Gb/s with fairly high performance. The model can be extended for studying more complex all-optical circuits of enhanced functionality in which the XOR gate is the basic building block.     

Numerical study of a harmonic mode-locked semiconductor optical amplifier fiber ring laser

An improved harmonic mode-locked Semiconductor optical amplifier (SOA) fiber ring lasers has been presented and numerically investigated based on the self-reproduction theory. The numerical result shows that a narrower optical pulse train with a more symmetrical-temporal shape can be obtained, when the modulation SOA is DC biased on high current, whereas the gain SOA is DC biased on the low current functions as a gain compensator in the experimental setup. Also, the system parameters effects on the characteristic of the harmonic mode-locked pulse have been investigated.     

Design optimization of all-optical actively mode-locked ring laser based on cross-gain modulation in a semiconductor optical amplifier

A complete and detailed model is presented that describes the main physical phenomena that occur in an actively mode-locked fiber ring laser based on cross-gain modulation in a semiconductor optical amplifier employed as both the gain medium and mode-locking element. The relationship between key laser parameters and the output pulse characteristics is numerically analyzed to provide simple design rules and derive a set of necessary operational conditions. The adoption of these rules and the satisfaction of these conditions enables the optimization of the laser performance and the generation of short and high energy mode-locked output pulses.     

All-optical XOR logic gate operating on inputs with different modulation formats

An all-optical logic gate which can perform logic exclusive-OR (XOR) between an intensity modulated signal and a phase modulated one, is proposed and numerically investigated. The working principle of this logic gate is based on cross phase modulation in a highly nonlinear fiber.     

On the output characteristics of a semiconductor optical amplifier driven by an ultrafast optical time division multiplexing pulse train

A comprehensive theoretical analysis of a semiconductor optical amplifier (SOA) that is subject to an ultrafast optical time division multiplexing pulse stream is presented with the help of a simple but efficient model developed for this purpose. The model combines the necessary set of mathematical equations with the appropriate simplifying assumptions to describe in the time domain gain saturation and recovery for the case of multiple incoming pulses. In this manner, analytical expressions can be obtained for the power and chirp profile of the amplified pulses, essentially extending the work that has been performed for a single pulse only. This allows to identify the critical operational parameters and to investigate and evaluate their effect on these two output characteristics. The derived simulation curves are thoroughly studied to specify the limitations imposed on the SOA small signal gain and carrier lifetime as well as on the full-width at half-maximum (FWHM) and energy of the input pulses and, based on a series of logical arguments, to extract useful rules concerning their selection so as to achieve improved performance with respect to the practical applications of all-optical switching and pulse compression. The obtained results indicate that due to the continuous insertion of pulses, the requirements for the SOA small signal gain and the input pulse energy are stringent than those for the case of isolated pulse amplification. The combination of these two parameters determines also the regime in which the amplifier must be biased to operate in order to ensure distortionless pulse amplification and enhanced chirp for efficient pulse compression and it has been found that low saturation is necessary for the former case whilst heavy saturation for the latter. The scopes of the corresponding requirements for the carrier lifetime and the FWHM are also tight but to a less extent and can be simply satisfied with the available photonics technology. These results are in good agreement with the available experimental data essentially proving the validity and robustness of the model. The model can be thus applied to predict the behavior of more complex all-optical circuits of enhanced functionality in which the SOA is the basic functional device.     

All-optical burst-mode clock extraction based on the thresholding operation of a modified terahertz optical asymmetric demultiplexer

To implement all-optical burst-mode clock extraction we adopt a modified terahertz optical asymmetric demultiplexer (MTOAD). The transmittance and reflectance of the MTOAD depend on the input intensity. For the MTOAD, two levels of pulse intensity can be chosen in such a way that while the pulses with similar intensity are reflected for both strong and weak pulses, only the strong pulse transmits. The device is useful, for example, for bit-level clock extraction from a packet, where strong and weak intensity pulses are assigned to ‘1' and ‘0', respectively. When the input optical signal power is fixed to −1.6 dBm and the intensity ratio between ‘1' and ‘0' is varied in the range of 0.2–0.5, the extinction ratio (ER) at the transmitted port is more than 10 dB and a clock amplitude jitter (CAJ) of the bit-level clock at the reflected port is less than 14%. Inversely, when the input power is varied in the range of −6–−1 dBm with fixed intensity ratio of 0.3, more than 11 dB of ER and less than 15% of CAJ are obtained.     

Parameter design and performance analysis of a ultrafast all-optical XOR gate based on quantum dot semiconductor optical amplifiers in nonlinear mach-zehnder interferometer

This paper presents the parameter design and performance analysis of a 160 Gb/s all-optical XOR gate based on cross-gain modulation (XGM) in a nonlinear Mach-Zehnder interferometer (MZI) with quantum dot semiconductor optical amplifiers (QD-SOAs). Detailed numerical simulations of the QD-SOA parameters and optical signal parameters are performed to elevate the gate performance. With the optimized parameters, a Q factor over 8 dB is obtained. The possibility of operating at higher speed of the XOR gate is demonstrated as well. The results will be helpful for the design and performance analysis of practical quantum dot devices.     

All-optical logic OR gate using SOA and delayed interferometer

All-optical OR operation has been demonstrated using a semiconductor optical amplifier (SOA) and delayed interferometer (DI) at 80 Gb/s. The DI is based on a polarization maintaining loop mirror. Q-factor of the operation is discussed through numerical simulations. The results show the OR gate operation rate is limited by the gain recovery time and input pulse energy.