Fast bistable all-optical switch and memory on a silicon photonic crystal on-chip

We demonstrate extremely low-power all-optical bistability by utilizing silicon photonic crystal nanocavities, based on the plasma effect of carriers generated by two-photon absorption. Owing to the high quality factor and the small volume of the nanocavities, the photon density inside the cavity becomes extremely high, which leads to a large reduction in operation power. Optical bistable operation in a single nanocavity permits optical read-write memory operation, which opens the possibility of an integrated optical logic circuit on a single chip, based on photonic crystals. The demonstrated bistable threshold power is 0.4 mW with a set pulse energy of 74 fJ, at a switching speed of <100 ps.     

Photonic logic NOR gate based on two symmetric microring resonators

We demonstrate an all-optical NOR logic gate based on symmetric GaAs-AlGaAs microring resonators whose resonances are closely matched. Two input pump data streams are tuned close to one resonance of the symmetric microrings to switch a probe beam tuned to another resonance by two-photon absorption. The switching energy of the gate is 20 pJ/pulse, and the switching window is 40 ps, limited by the carrier lifetime. The use of two rings provides for better cascading in photonic logic circuits because of the higher number of available ports.     

Simulation of two photon absorption in silicon wire waveguide for implementation of all optical logic gates

All optical switching action of silicon wire waveguide for the design of the proposed logic gates is simulated. This is one possible building block of the future all optical computer or photonic devices. All optical logic gates NOT, NAND and AND gates using two photon absorption in silicon wire waveguide are presented. Use of ultra short pulse has negligible free carrier absorption effect; hence the operating speed of the gates is very high and has potential application in photonic processing. NAND gate is universal one and thus one can perform any logical operation using this. The device (Si wire WG) requires low energy pulse and is ultrafast one.     

All optical switching in henna thin film

The optical nonlinearity in henna (Lawson (2- hydroxyl-1,4 naphthoquinone) film was utilized to demonstrate all optical switching. The nonlinear absorption of the henna film was calculated by measuring the transmission of the laser beam (λ = 488 nm) as a function of incident light intensities. The observed nonlinear absorption is attributed to a two-photon absorption process. The pump and probe technique was used to demonstrate all optical switching. The switching characteristics can be utilized to generate all-optical logic gates such as simple inverter switches (NOT) NOR, AND NAND logic functions.     

Pump power dependence of the electron-hole plasma luminescence in Ga-doped ZnO film

Time resolved two-photon absorption induced electron-hole plasma (EHP) luminescence of Ga-doped ZnO thin film was measured by an ultrafast optical Kerr gate (OKG) in femtosecond time regime. Experimental results showed that the buildup time of the EHP luminescence was strongly dependent on the excitation fluence. The dependence of the buildup time of EHP on excitation fluence probably arose mainly from the relaxation of the hot carriers due to the carrier-carrier interaction, which increased with the increase of excitation fluence.     

磁性量子元胞自动机逻辑电路的转换特性研究

本文研究了磁性量子元胞自动机反相器和择多逻辑门等基本逻辑电路在不同纳磁体厚度和间距下的转换特性.采用单畴近似LLG方程对纳磁体以及电路进行了建模和仿真,结果表明更厚的纳磁体需要更大的转换磁脉冲,大厚度纳磁体逻辑电路表现出较慢的转换;相同厚度和间距下,择多逻辑门比反相器的转换时间略长.此外,模拟结果还表明纳磁体间距对反相器的转换过程影响明显,而对择多逻辑门则影响较小. 关键词： 磁性量子元胞自动机 转换特性 厚度和间距 逻辑电路     

All-optical high speed logic gates using SOA

In this paper a novel and simple structure of a high speed optical logic gate based on bulk semiconductor optical amplifier (SOA) is presented. The gain dynamic and phase response of bulk SOA using rate equations including the dynamics of carrier heating (CH) and spectral-hole burning (SHB) is investigated numerically. The operation of NOR gate is analyzed by using the presented numerical method, and a NOR gate that can operate up to 1 Tbps is designed. By using the proposed structure, high speed logic gates based on bulk SOA can be realized.     

Two-photon absorption-induced self-phase modulation in GaAs-AlGaAs waveguides for surface-emitted second-harmonic generation

Performance-limiting asymmetric distortion is observed in the spectra of fundamental pulses transmitted through GaAs-Al(0.9)Ga(0.1)As multilayer waveguides designed for surface-emitted second-harmonic generation. This behavior is attributed to refractive-index changes resulting from the accumulation of free carriers created by two-photon absorption in the GaAs layers. Numerical simulations of the intensity-dependent spectra by use of the separately measured two-photon absorption coefficient are shown to be in good agreement with the observed spectra.     

All optical logic NAND gate based on two-photon absorption in semiconductor optical amplifiers

We propose a new scheme to realize all optical logic NAND operating at high speeds up to 250 Gb/s utilizing the ultrafast phase response during two-photon absorption (TPA) process in semiconductor optical amplifiers (SOA). NAND gate is important because other Boolean logic elements and circuits can be realized using NAND gates as basic building blocks. Rate equations for semiconductor optical amplifiers (for input data signals with high intensity) configured in the form of a Mach-Zehnder interferometer have been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The performance of this scheme is analyzed by calculating the quality factor of the resulting data streams. The results show that both AND and NAND operations at 250 Gb/s with good signal to noise ratio are feasible.     

All-optical time-division demultiplexing and spatial pulse routing with a GaAs/AlGaAs microring resonator

We report what is to our knowledge the first demonstration of all-optical time-division demultiplexing and spatial pulse routing in a compact nonlinear GaAs/AlGaAs microring resonator operating at 1.55 microm . Switching is through the refractive-index change induced by two-photon absorption. The switching time of the device, limited by the ring-charging time and the recombination time of the induced carriers, is measured to be 30 ps. The switching on-off contrast, limited by the slight mismatch between the input and output coupling coefficients, exceeds 8 dB. The device can be used for time-division multiplexing as well.     

Analytical and simulative studies on optical NOR and controlled NOR logic gates with semiconductor optical amplifier

Semiconductor optical amplifier (SOA) is used for different successful frequency based switching operations. In this paper the authors describe the simulation study of the performances of SOA in various optical switches like frequency conversion, add-drop multiplexer and frequency encoded optical NOR gate, which is one the most important gates in logic family as it is known as one of the universal logic gates. Again, the controlled optical NOR logic operation with semiconductor optical amplifier is also proposed in this paper.     

An optically bistable absorption scheme with additional lateral feedback loops

An optically bistable absorption system involving several feedback loops formed by the lateral supply of a fraction of light energy passed through a semiconductor with single-and two-photon absorption is analyzed. It is shown that multistability can be realized in the case of two-photon absorption. The use of several loops makes it possible to significantly reduce energy expenditures on switching and to reduce the switching time by approximately a factor of 10. A method of switching the system from one state to another by varying the reflectivities of side mirrors is proposed.     

Nonresonant and Resonant Nonlinear Absorption of CdSe-Based Nanoplatelets

We present a comprehensive understanding of the nonlinear absorption characteristics of CdSe-based nanoplatelets(NPLs) synthesized by the solution-phase method and the colloidal atomic layer deposition approach through Z-scan techniques at 532 nm with picosecond pulses. The CdSe NPLs exhibit strong two-photon induced free carrier absorption(effective three-photon absorption) upon the nonresonant excitation, resulting in a remarkable optical limiting behavior with the limiting threshold of approximately 75 GW/cm~2. A nonlinear optical switching from saturable absorption(SA) to reverse saturable absorption(RSA) with increasing the laser intensity is observed when coating CdSe NPLs with a monolayer of CdS shell to realize the resonant absorption. The SA behavior originates from the ground state bleaching and the RSA behavior is attributed to the free carrier absorption.These findings explicitly demonstrate the potential applications of CdSe-based NPLs in nonlinear optoelectronics such as optical limiting devices, optical pulse compressors and optical switching devices.     

All-optical logic gates based on two-photon absorption in semiconductor optical amplifiers

When the two-photon absorption of a high intensity pump beam takes place in a semiconductor optical amplifier there is an associated fast phase change of a weak probe signal. A scheme to realize fast all-optical XOR logic function using two-photon absorption induced phase change has been analyzed. Rate equations for semiconductor optical amplifiers, for input data signals with high intensity, configured in the form of a Mach–Zehnder interferometer has been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The model shows that both XOR operation and pseudo-random binary sequence generation at 250 Gb/s with good signal to noise ratio is feasible.     

半导体光放大器的稳态增益饱和特性

高速全光逻辑门是实现光分组交换、光计算和未来高速大容量光传输的关键器件,近年来受到广泛的关注。半导体光放大器（SOA）因为具备体积小、工作波长范围宽、响应时间短及良好的非线性特性等优点,成为研制高速全光逻辑器件的首选。采用分段模型分析了SOA的稳态增益饱和特性,通过数值求解载流子速率方程和光传输方程对其特性进行了仿真实现。结果表明,SOA在入射光功率不同时会表现出明显的非线性;在一定范围内增加光功率,SOA增益持续增加,继续增加入射光功率,SOA逐渐进入饱和吸收状态,增益反而降低。     

Self-starting mode locking of a Nd:glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs

We present a diode-pumped Nd:glass fiber laser, emitting at 1060 nm, that is passively mode locked by fast nonlinear loss in low-temperature-grown GaAs (LT-GaAs). This new mode-locking mechanism is based on intensity-dependent defocusing in LT-GaAs that occurs after nonresonant generation of free carriers by two-photon absorption. Mode locking is self-starting and produces pulses as short as 4.1 ps.     

Performance of all-optical XOR gate based on two-photon absorption in semiconductor optical amplifier-assisted Mach–Zehnder interferometer with effect of amplified spontaneous emission

The performance of all-optical XOR gate is simulated and investigated. This Boolean function is realized by using a Mach–Zehnder interferometer (MZI) and exploiting the nonlinear effect of two-photon absorption (TPA) in semiconductor optical amplifier (SOA) incorporated in the MZI arms. By adjusting the input pulse intensities to be high enough, the TPA-induced phase change can be larger than the regular gain-induced phase change and hence support ultrafast operation in dual rail switching mode. The numerical study is carried out by taking into account the effect of amplified spontaneous emission (ASE). The dependence of the output quality factor ( \(Q\) -factor) on critical data signals and SOAs parameters is examined and assessed. The obtained results confirm that the XOR gate implemented with the proposed scheme is capable of operating at a data rate of 250 Gb/s with logical correctness and high output \(Q\) -factor.     

Ultrafast optical nonlinearity in the quasi-one-dimensional mott insulator Sr2CuO3

We report strong instantaneous photoinduced absorption in the quasi-one-dimensional Mott insulator Sr2CuO3 in the IR spectral region. The observed photoinduced absorption is to an even-parity two-photon state that occurs immediately above the absorption edge. Theoretical calculation based on a two-band extended Hubbard model explains the experimental features and indicates that the strong two-photon absorption is due to a very large dipole coupling between nearly degenerate one- and two-photon states. Room temperature picosecond recovery of the optical transparency suggests the strong potential of Sr2CuO3 for all-optical switching.     

Two-photon absorption in the vicinity of the exciton absorption in CdS

The two-photon absorption spectrum of CdS in the wavelength region of the free and bound exciton lines has been measured using a pulsed dye laser and a differential transmittance technique. An intense absorption band is observed which is possibly due to the interference of the contributions of different intermediate states to the interband two-photon absorption. No absorption is observed which can be attributed to the formation of free excitonic molecules.     

双光子光学多稳态理论

本文系统地研究了双光子共振作用的光学多稳态理论。在平均场近似下求出的状态方程包含了动态斯塔克效应及弛豫时间参数。指出了在平均场近似下,F-P腔与单向环形腔的状态方程有基本相同的形式。分析了双光子光学多稳态的两种物理机构——克尔效应与饱和吸收效应。在一定条件下这两种效应的共同作用可导致双稳态、双双稳态及三稳态。进一步还给出了区分双稳态、双双稳态及三稳态的判别式。最后还研究了双光子四波混频位相复共轭反射率的双稳态及多稳态。 关键词：