Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with Cr4+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, for the first time, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The pulse duration is obviously compressed in contrast to the actively acoustic-optic Q-switched laser. By considering the Gaussian transversal distribution of the intracavity photon density and the longitudinal distribution of the photon density along the cavity axis as well as the influence of turnoff time of the acoustic-optic (AO) Q-switch, we provide the coupled rate equations for a diode-pumped doubly Q-switched Nd:GdVO₄ laser with both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber. These coupled rate equations are solved numerically, and the dependence of pulse width, pulse energy and peak power on the incident pump power at different pulse repetition rates is obtained. The numerical solutions of equations agree well with the experimental results.This revised version was published online in August 2005 with a corrected cover date.     

High power diode-side-pumped rod Nd:GdVO4 laser

A compact high power diode-side-pumped Nd:GdVO₄ laser has been presented, which can generate an output power of 52 W at 1.063-μm for continuous-wave (CW) operation. The absorption characteristics of the Nd:GdVO₄ in different pump directions is measured, which were used to optimize the diode-side-pumped Nd:GdVO₄ laser head. The laser characteristics of both CW and Q-switched Nd:GdVO₄ and Nd:YAG in are compared and it was found that Nd:GdVO₄ may surpass Nd:YAG for high power laser application.     

Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained.     

Efficient passively Q-switched operation of a diode-pumped Nd:GGG laser with a Cr:YAG saturable absorber

The continuous-wave (cw) and passive Q-switching operation of a diode-end-pumped gadolinium gallium garnet doped with neodymium (Nd:GGG) laser at 1062 nm was realized. A maximum cw output power of 6.9 W was obtained. The corresponding optical conversion efficiency was 50.9%, and the slope efficiency was determined to be 51.4%. By using Cr⁴⁺:YAG crystals as saturable absorbers, Q-switching pulse with average output power of 1.28 W, pulse width of 4 ns and repetition rate of 6.2 kHz were obtained. The single-pulse energy and peak power were estimated to be 206 μJ and 51.6 kW, respectively. The conversion efficiency of the output power from cw to Q-switching operation was as high as 84.7%.     

Q-switched and continuous-wave mode-locking of a diode-pumped Nd:Gd0.64Y0.36VO4−Cr4+:YAG laser

We report on a diode-pumped passively mode-locked Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. Q-switched mode locking (QML) with 90% modulation depth was obtained. The peak power of the mode-locked pulse near the maximum of the Q-switched envelope was estimated to be about 1.7 MW at the pump power of 12 W. Besides QML, continuous-wave mode locking was also experimentally realized, for the first time to our knowledge, in the laser under a strong intracavity pulse energy fluence. The mode-locked pulse width is about 2.96 ps at a repetition rate of 161.3 MHz.     

Low-threshold diode-pumped CW passively mode-locked Nd:YVO4 laser

A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO₄ solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz.     

Passively Q-switched laser performance of c-cut Nd:Gd0.63Y0.37VO4 crystal

Passively Q-switched c-cut Nd:Gd_0.63Y_0.37VO₄ laser performance at 1.06 μm was demonstrated with Cr⁴⁺:YAG as saturable absorbers for the first time to our knowledge. This c-cut mixed crystal was found to have large energy storage capacity. The shortest pulse width, largest pulse energy, and highest peak power were obtained to be 6.6 ns, 201.7 μJ, and 30.6 kW, respectively.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

A passively Q-switched Yb:YAG microchip laser

We present a diode-pumped passively Q-switched Yb:YAG microchip laser, using a semiconductor saturable absorber mirror. We obtained pulses with 1.1-μJ energy, 530-ps duration, 1.9-kW peak power, and a repetition rate of 12 kHz. The laser is oscillating in a single longitudinal mode. Received: 23 October 2000 / Published online: 7 February 2001     

High efficiency TEM00 mode, diode-pumped, conduction-cooled, Nd:YAG zig-zag slab laser

We report a compact, conduction-cooled, highly efficient, continuous wave (CW) Nd:YAG slab laser in diode-side-pumped geometry. To achieve high efficiency, a novel laser head for Nd:YAG slab has been developed. For an absorbed pump power of 27.6 W, maximum output power of 10.4 W in multimode and 8.2 W in near-diffraction-limited beam quality has been obtained. Slope and optical-to-optical conversion efficiencies are 45.3% and 37.7% in multimode with beam quality factors (M²) in x and y directions equal to 32 and 8, respectively. TEM₀₀ mode operation was achieved in a hybrid resonator with slope and optical-to-optical conversion efficiencies of 43.2% and 29.7%, respectively. Beam quality factors in x and y directions are ?1.5 and ?1.6 for the whole output power range. The laser radiation was linearly polarized and polarization contrast ratios are >1200:1 in the multimode and 1800:1 in the TEM₀₀ mode operation. In passive Q-switching with Cr⁴⁺:YAG crystal of 68% initial transmission, 18 ns pulsewidth has been achieved with an average power of 2 W at a repetition rate of 16 kHz.     

Instability and satellite pulse of passively Q-switching Nd:LuVO4 laser with Cr:YAG saturable absorber

This work presents experimental results concerning a passively Q-switching Nd:LuVO₄ laser with a Cr⁴⁺:YAG saturable absorber operated in a three-element cavity. When the pump power exceeded 5.47 W, the system transfers stable pulse train into spatial-temporal instability. Furthermore, the chaotic pulse train accompanied the generation of a satellite pulse. The experimental results reveal that the mechanisms of instability and generation of the satellite pulse are governed by the multitransverse mode competition.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

Intracavity optical parametric oscillator at 1572-nm wavelength pumped by passively Q-switched diode-pumped Nd:YAG laser

An intracavity optical parametric oscillator (IOPO) based on bulk KTP crystal was constructed with a Nd:YAG slab as an active medium pumped by a 300-W diode array and Cr:YAG as a passive Q-switch. A signal pulse of 1.9-mJ energy at 1572-nm wavelength was demonstrated. In the cavity, optimized with respect to single-pulse energy, a five-fold shortening of signal-pulse duration with respect to 1064-nm pump radiation was observed. A twice as large level of signal peak power of 650 kW, compared to the pump laser in the same cavity without the IOPO, was achieved. A conversion efficiency of 44% with respect to the 1064-nm pump beam and 3.8% with respect to diode pump energy was demonstrated. Received: 15 October 2002 / Revised version: 19 February 2003 / Published online: 16 April 2003 RID="*" ID="*"Corresponding author. Fax: +48-22/666-8950, E-mail: wzendzian@wat.edu.pl     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

High-power continuous-wave diode-end-pumped intracavity-frequency-doubled Nd:GdVO4/LBO red laser

A high-power continuous-wave (CW) diode-end-pumped intracavity-frequency-doubled red laser is reported here. The laser consists of a 0.3 at.% Nd:GdVO₄ crystal as laser gain medium, a type II non-critical phase-matched (NCPM) LBO crystal or a type I critical phase-matched (CPM) LBO crystal as frequency-doubler, and a three-mirror-folded cavity. At incident pump power of about 41 W, maximum output powers of 3.8 W and 3 W at 671 nm are obtained with corresponding optical-to-optical conversion efficiency of 9.3% and 7.5%, respectively. During half an hour, the instability of the red beam is less than 3% at output of 3 W.     

High-peak-power diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser

We report on a passively Q-switched diode-pumped Nd:YVO₄ laser polarized along the a axis (corresponding to the smallest value of emission cross section at 1064 nm), generating 157-μJ pulses with 6.0-ns time duration (>20 kW peak power) and 3.6 W of average power at 1064 nm with good beam quality (M²<1.4). The selection of the polarization was performed by a novel technique relying on the birefringence of the laser crystal and on the misalignment sensitivity of the resonator. Received: 30 September 2002 / Revised version: 22 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +39-382/422583, E-mail: agnesi@ele.unipv.it     

Passively Q-switched Nd:YAG pumped UV lasers at 280 and 374 nm

Pulsed UV lasers at the wavelengths of 374 and 280 nm are realized by cascaded second harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd:YAG laser at 1123 nm. The Nd:YAG laser is longitudinally pumped and passively Q-switched, and it has a high peak power of 3.2 kW. The UV peak powers at 280 and 374 nm are 100 and 310 W, with pulse lengths of 6 and 8 ns, respectively. Spectral broadening of 374 nm laser by stimulated Raman scattering is studied in single mode pure silica core UV fiber. Realizations of UV lasers enabling compact design at 280 and 374 nm wavelengths are demonstrated.