Tunneling and electric-field effects on electron-hole localization in artificial molecules

I theoretically investigate the Stark shift of the exciton goundstate in two vertically coupled quantum dots as a function of the interdot distance. The coupling is shown to enhance the tuneability of the linear optical properties, including energy and oscillator strength, as well as the exciton polarizability. The coupling regime that maximizes these properties results from the detailed balance between the effects of the single-particle tunneling, of the electric field and of the carrier-carrier interaction. I discuss the relevance of these results to the possible implementation of quantum-information processing based on semiconductor quantum dots: in particular, I suggest the identification of the qubits with the exciton levels in coupled- rather than single-dots.     

Exciton in wurtzite GaN/AlxGa1−xN coupled quantum dots

Based on effective-mass approximation, we present a three-dimensional study of the exciton in GaN/Al_xGa_1−xN vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of wurtzite GaN/Al_xGa_1−xN coupled QDs is studied in detail. Our numerical results show that the strong built-in electric field in the GaN/Al_xGa_1−xN strained coupled QDs leads to a marked reduction of the effective band gap of GaN QDs. The exciton binding energy, the QD transition energy and the electron-hole recombination rate are reduced if barrier thickness L^AlGaN is increased. The sizes of QDs have a significant influence on the exciton state and interband optical transitions in coupled QDs.     

Anomalous electric-field dependence of excitonic Fano-resonance spectra in semiconductor quantum-wells

Optical absorption spectra due to Fano resonance (FR) of an exciton in a quantum well with an external electric field perpendicular to the layer plane are presented, based on multi-channel scattering calculations incorporating a hole-subband mixing effect. Peak values of the calculated FR spectra exhibit anomalous field-dependent changes. These cannot be accounted for by the commonly-known quantum-confined Stark effect (QCSE) that has been applied exclusively to bound state spectra. This behavior, ascribable to correlation between Fano couplings and the QCSE, is revealed just in high-resolution spectra, otherwise the field-dependence results in nothing but the same as that of the bound-state spectra.     

Electron-longitudinal-acoustic-phonon scattering in double-quantum-dot based quantum gates

We propose a nanostructure design which can significantly suppress longitudinal-acoustic-phonon-electron scattering in double-quantum-dot based quantum gates for quantum computing. The calculated relaxation rates vs. bias voltage exhibit a double-peak feature with a minimum approaching ¹⁰⁵ s⁻¹. In this matter, the energy conservation law prohibits scattering contributions from phonons with large momenta; furthermore, increasing the barrier height between the double quantum dots reduces coupling strength between the dots. Hence, the joint action of the energy conservation law and the decoupling greatly reduces the scattering rates. The degrading effects of temperatures can be reduced simply by increasing the height of the barrier between the dots.     

Exciton states and interband optical transitions in ZnO/MgZnO quantum dots

Within the framework of the effective-mass approximation, the exciton states confined in wurtzite ZnO/MgZnO quantum dot (QD) are calculated using a variational procedure, including three-dimensional confinement of carriers in the QD and the strong built-in electric field effect due to the piezoelectricity and spontaneous polarizations. The exciton binding energy and the electron-hole recombination rate as functions of the height (or radius) of the QD are studied. Numerical results show that the strong built-in electric field leads to a remarkable electron-hole spatial separation, and this effect has a significant influence on the exciton states and optical properties of wurtzite ZnO/MgZnO QD.     

Stability of neutral and negative donor impurity in a semiconductor cylindrical quantum dot

The stability of neutral (D⁰) and negative charged donor (D⁻) on- and off-center in anisotropic cylindrical quantum dot (CQD) is studied by use of a variational approach. Two-parameter anisotropic trial wave function which includes electron-correlation effects is utilized, to explore strong and weak confinement regions. A comparison between one and two-parameter trial wave functions results is introduced. The finite barrier height and the CQD dimensions, dependence of the “stability and the binding energy” of the D⁰ and the D⁻ is obtained. It has been shown that the donor's stability dependent on CQD dimensions and the confinement potential in strong confinement region but in weak confinement region, the stability of D⁰ and D⁻ is dependent strongly on the quantum dot (QD) radius R. It has been found that the donors D⁰ and D⁻ off-center are less stable than the on-center impurities, and also the off-center donors more stable in small CQDs. It has shown that the stability of D⁻ depends on the energy of the excess electron.     

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Within the framework of the effective-mass approximation and variational approach, we present calculations of the bound exciton binding energy, due to an ionized donor, in wurtzite In_xGa_1−xN/GaN strained quantum dots (QDs), considering three-dimensional confinement of the electron and hole in the QDs and the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Our results show that the position of the ionized donor, the strong built-in electric field, and the structural parameters of the QDs have a strong influence on the donor binding energy. The variation of this energy versus position of the donor ion is in double figures of milli-electron volt. Realistic cases, including the donor in the QD and in the surrounding barriers, are considered.     

Exciton condensation in coupled quantum wells

Bound electron-hole pairs—excitons—are Bose particles with small mass. Exciton Bose-Einstein condensation is expected to occur at a few degrees Kelvin—a temperature many orders of magnitude higher than for atoms. Experimentally, an exciton temperature well below 1 K is achieved in coupled quantum well (CQW) semiconductor nanostructures. In this contribution, we review briefly experiments that signal exciton condensation in CQWs: a strong enhancement of the indirect exciton mobility consistent with the onset of exciton superfluidity, a strong enhancement of the radiative decay rate of the indirect excitons consistent with exciton condensate superradiance, strong fluctuations of the indirect exciton emission consistent with critical fluctuations near the phase transition, and a strong enhancement of the exciton scattering rate with increasing concentration of the indirect excitons revealing bosonic stimulation of exciton scattering. Novel experiments with exciton condensation in potential traps, pattern formation in exciton system and macroscopically ordered exciton state will also be reviewed briefly.     

Optical phonons in semiconductor quantum rods

Surface polar-optical phonons are analyzed for semiconductor quantum rods (QR). The cylindrical symmetry is modelled in the form of a prolate spheroid where the aspect-ratio is identified with the corresponding ratio of the ellipsoid semiaxes. Using a theory based on the dielectric continuum approach, we consider a single CdSe QR inserted in a host material, assumed as an infinite dielectric, and viewed as an inactive rigid medium to the oscillations. Our results for CdSe are discussed, together with the differences from spherical and quasi-spherical quantum dots. We believe these are important steps to help the understanding of future experiments in this new class of materials.     

Polarization catastrophe in nanostructures doped in photonic band gap materials

In the presence of the dipole-dipole interaction, we have studied a possible dielectric catastrophe in photonic band gap materials doped with an ensemble of four-level nanoparticles. It is found that the dielectric constant of the system has a singularity when the resonance energy lies within the bands. This phenomenon is known as the dielectric catastrophe. It is also found that this phenomenon depends on the strength of the dipole-dipole interaction.     

Four-wave mixing in coupled semiconductor quantum dots

We present a theoretical analysis of four-wave mixing in coupled quantum dots subject to inhomogeneous broadening. For the biexciton transitions, a clear signature of interdot-coupling appears in the spectra. The possibility of experimental observation is discussed.     

Discrete quantum Fourier transform in coupled semiconductor double quantum dot molecules

In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible unitary transformations. The current scheme would be a useful step towards the realization of complex quantum algorithms in the quantum dot system.     

The trion as an exciton interacting with a carrier

The X⁻ trion is essentially an electron bound to an exciton. However, due to the composite nature of the exciton, there is no way to write an exciton-electron interaction potential. We can overcome this difficulty by using a commutation technique similar to the one we introduced for excitons interacting with excitons, which allows to take exactly into account the close-to-boson character of the excitons. From it, we can obtain the X⁻ trion creation operator in terms of excitons and electrons. We can also derive the X⁻ trion ladder diagram between an exciton and an electron. These are the basic tools for future works on many-body effects involving trions.     

Theory of spin precession monitored by laser pulse

We first predict the splitting of a spin degenerate impurity level when this impurity is irradiated by a circularly polarized laser beam tuned in the transparency region of a semiconductor. This splitting, which comes from different exchange processes between the impurity electron and the virtual pairs coupled to the pump beam, induces a spin precession around the laser beam axis, which lasts as long as the pump pulse. It can thus be used for ultrafast spin manipulation. This effect, which has similarities with the exciton optical Stark effect we studied long ago, is here derived using the concepts we developed very recently to treat many-body interactions between composite excitons and which make the physics of this type of effects quite transparent. They, in particular, allow to easily extend this work to other experimental situations in which a spin rotates under laser irradiation.     

Proposal of structures possessing high exciton concentration

The possibility of achievement of high exciton concentrations is analyzed. It is shown that high concentrations can be achieved in a three-layer thin molecular film due to the autoreduction processes taking place in it. Shortly, the appearance of high concentrations is the consequence of boundary conditions in film and of the magnitude of matrix elements of dipol-dipol interactions. The autoreduction takes place in the cases when matrix elements characterizing exciton transfer are less than statistical matrix elements. Based on numerical analysis, it was found that optical quanta concentrations of a three-layer film can achieve values of about 5×10⁻². The structures possessing so high concentration do not exist in nature, thus they have to be synthesised. For the current state of nanotechnology, it is not a problem. Fortunately achieving high concentrations requires only certain ratios of relevant characteristics of the film with a two-level exciton scheme, but not their single values.     

Barrier D centers in a quantum disc

The bound states of the barrier D⁻ center, which consists of a positive ion located on the z-axis at a distance λ from the two-dimensional quantum disc plane with a confined parabolic potential and two electrons in the disc plane bound by the ion, are studied under a perpendicular homogeneous magnetic field. The binding energies of the three lowest bound states are calculated as a function of the applied magnetic field strength γ. Discontinuous ground state transitions induced by an external magnetic field have been obtained. We have investigated the effect of the impurity position and found that the transition of the ground-state occurs for finite λ with increasing γ.     

Laser-induced operations with charge qubits in a double-well nanostructure

We present the results of theoretical studies on operations with charge qubits in the system composed of two tunnel-coupled semiconductor quantum dots whose two lowest states (localized in different dots) define the logical qubit states while two excited states (delocalized between the dots) serve for the electron transfer from one dot to another under the influence of the laser pulse. It is shown that in the case of small energy separation between the excited levels, the optimal (from the viewpoint of minimal single-qubit operation time and maximum operation fidelity) strategy is to tune the laser frequency between the excited levels. The pulse parameters for implementation of the quantum NOT operation are determined. Analytical results obtained in the rotating-wave approximation are confirmed by rigorous numerical calculations.     

Quantification of continuous variable entanglement with only two types of simple measurements

Here we propose an experimental set-up in which it is possible to obtain the entanglement of a two-mode Gaussian state, be it pure or mixed, using only simple linear optical measurement devices. After a proper unitary manipulation of the two-mode Gaussian state only number and purity measurements of just one of the modes suffice to give us a complete and exact knowledge of the state’s entanglement.     

Nonresonant two-photon generation of excitonic matter in a CuCl pellet

A pressed CuCl pellet is optically excited at 2 K using an excitation energy in the range from 1892 to 2843 meV, which is far below the bandgap. The steady-state population dynamics unambiguously indicates an unusual two-photon generation of ground-state excitons. At high-excitation levels, the observed spectra exhibit rich spectral features arising from electron-hole plasma and electron-hole droplets formation. This nonresonant two-photon excitation is presumably assisted by impurity bands due to grain boundaries and surfaces in this random semiconductor.