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1.
The betaspectra of 12B and 12N have been measured with a NaI crystal as spectrometer. Assuming a shape correction factor 1 + aW + bW2 and b = 1.106 × 10−4 MeV−2, b+ = −1.397 × 10−4 MeV−2, the spectra yield a = (+0.91 ± 0.11) × 10−2 MeV−1 and a+ = (−0.07 ± 0.09) × 10−2 MeV. the aa+ = (+0.98 ± 0.09) × 10−2 MeV−1 is in agreement with the weak magnetism prediction.  相似文献   

2.
The results of the impedance spectroscopy measurements on eutectic samples based on zirconium oxide are presented here. Samples of CaZrO3---ZrO2(cubic) and MgO---ZrO2(cubic) have been grown by a directional solidification procedure such that the different phases appear nearly oriented along the growth direction (lamellae in the system of CaZrO3-ZrO2(cubic) and fibers of MgO in a ZrO2 matrix in the other system). The DC electrical conductivity has been measured by impedance spectroscopy along and across the growth axis. For CaZrO3---ZrO2 the coductivity is clearly anisotropic. The following values for σT have been obtained: the conductivity at 600 °C equals 2.0 × 10−6 Ω−1 cm−1 perpendicular to the fiber axis and 1.4 × 10−5 Ω−1 cm−1 parallel to it and with an activation energy of 1.3 eV for σT. For MgO---ZrO2(cubic) the isotropic value of the conductivity at 600 °C is 10−4 Ω−1 cm−1 with activation energy for σT of 1.5 eV. The anisotropic conductivity in the CaZrO3---ZrO2 (cubic) system has been explained by a model of an ordered stacking of oxygen conducting (cubic ZrO2) and non-conducting (CaZrO3 or MgO) phases.  相似文献   

3.
Polycrystalline (1−x)Ta2O5xTiO2 thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO2 layer was formed at the (1−x)Ta2O5xTiO2/Si interface. Thin films with 0.92Ta2O5–0.08TiO2 composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×1011 cm−2 eV−1, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm2 was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10−9 A/cm2 up to an applied electric field of 6 MV/cm.  相似文献   

4.
By undertaking AC electrochemical impedance experiments on yttria stabilised zirconia electrolytes with polished Y1Ba2Cu3O7−x electrodes, the activation energy for oxygen ion transport within the bulk of Y1Ba2Cu3O7−x, in air, over the temperature range 823 K–1043 K, was determined to be 1.50 ± 0.05 eV. At 1000 K the oxygen ionic conductivity was calculated to be around one order of magnitude lower than that in yttria stabilised zirconia. Typical calculated values were σ=5×10−5 (ω cm)−1 and 6×10−3 (ω cm)−1 at the respective temperatures 823 K and 1043 K. By employing a similar cell but with Y1Ba2Cu3O7−x paste electrodes, oxygen transfer between the Y1Ba2Cu3O7−x and the electrolyte was found to occur via a surface diffusional processes. Over the temperature range 873 K–1098 K, in air, the activation energy for in-diffusion at the surface was found to be 1.4±0.1 eV and that for out-diffusion at the surface to be 1.76±0.05 eV.  相似文献   

5.
D.-S. Choi  R. Gomer 《Surface science》1990,230(1-3):277-282
The diffusion of W on a (211) plane of a W field emitter has been re-examined by means of the fluctuation autocorrelation method. Diffusion along channels yielded E = 16.8 ± 0.5 kcal, D0 = (3 ± 1) × 10−5 cm2 s−1. For diffusion across channels E =6.6 kcal, D0 = 4 × 10−9cm2 s−1 at T < 752 K, and E = 24 kcal, D0 = 5 × 10−4 cm2 s−1 at T > 752 K. The results for diffusion along channels yield E and D0 values intermediate between recent results by Wang and Ehrlich [Surf. Sci. 206 (1988) 451] using field ion microscopy (E = 19 kcal, D0 = 7.7 × 10−3 cm2 s−1) and Tringides and Gomer [J. Chem. Phys. 84 (1986) 4049], using the same method as the present work but a larger slit (E = 13.3 kcal, D0 = 7 × 10−7 cm2 s−1). The results for cross channel diffus good agreement with those of Tringides and Gomer below 752 K, where these authors stopped. The new high temperature results suggest that the channel wall exchange mechanism postulated by Tringides and Gomer for cross channel diffusion at low T gives way to diffusion by climbing over the channel walls with higher E but also higher D0 above 752 K. Possible reasons for the discrepancies between these three sets of results and the absence of cross channel diffusion in the work of Wang and Ehrlich are briefly discussed.  相似文献   

6.
The sessile-drop method is used to measure the surface tension and density of liquid indium and uranium under high vacuum. Measurements are made over the temperature range 156–500°C for In and at the melting point for U. Surface oxides are efficiently removed with a glow discharge system. Drop profiles are captured by photograph and processed using nonlinear regression to yield the surface tension and density. In this regression procedure, normal distances from calculated profiles to data points are minimized. For indium, the density and surface tension measurements yield mp = 7.05 × 103kg/m3, d/dT = −0.776 kg/m3·°C, and γmp = 0.568 N/m, dγ/dT = −9.45 × 10−5 N/m·°C. The results for uranium at the melting point are mp = 17.47 × 103 kg/m3 and γmp = 1.653 N/m.  相似文献   

7.
The lifetimes of the Cd+ 52P3/2 and 52P1/2 states have been measured by the Hanle effect. The Cd+ ions are produced in a d.c. discharge in cadmium vapor, with helium as buffer gas. The results are: τ(52P3/2) = (2.60±0.20) ×10−9sec, and τ(52P1/2) = (3.05 ± 0.13) × 10−9sec.

We measured also the cross sections for the destruction of the orientation in the 52P1/2Cd+ state (<5Å2), of the orientation (18±10Å2) and of the alignment (46±10Å2) in the 52P3/2 state due to collisions with the helium atoms.  相似文献   


8.
Optical nonlinearities and photo-excited carrier lifetime in CdS at 532 nm   总被引:2,自引:0,他引:2  
Bound-electronic and free-carrier optical nonlinearities, and relaxation of photo-excited free carriers in CdS have been investigated by the use of a single-beam Z-scan technique at 532 nm. Under pulsed radiation of 35-ps duration with the input irradiances up to 4.8 GW/cm2, the two-photon absorption coefficient, the bound-electron nonlinear refractive index, the free-carrier absorption cross-section, and the change in the refractive index per unit carrier density are determined to be 5.4±0.8 cm/GW, −(5.3±0.8)×10−13 cm2/W, (3.0±0.5)×10−17 cm2 and −(0.8±0.1)×10−21 cm3, respectively. By using these values in the open-aperture Z-scans conducted with 7-ns laser pulses, the carrier recombination time is extracted to be 3.6±0.7 ns. The measured parameters are compared to theoretical calculations.  相似文献   

9.
Novel hyperbranched polymer, poly[bis(diethylene glycol)benzoate] capped with a 3,5-bis[(3′,6′,9′-trioxodecyl)oxy]benzoyl group (poly-Bz1a), was prepared, and its polymer electrolyte with LiN(CF3SO2)2, poly-Bz1a/LiN(CF3SO2)2 electrolyte, was all evaluated in thermal properties, ionic conductivity, and electrochemical stability window. The poly-Bz1a/LiN(CF3SO2)2 electrolyte exhibited higher ionic conductivity compared with a polymer electrolyte based on poly[bis(diethylene glycol)benzoate] capped with an acetyl group (poly-Ac1a), and the ionic conductivity of poly-Bz1a/LiN(CF3SO2)2 electrolyte was to be 7×10−4 S cm−1 at 80 °C and 1×10−6 S cm−1 at 30 °C, respectively. The existence of a 3,5-bis[(3′,6′,9′-trioxodecyl)oxy]benzoyl group as a branching unit present at ends in the base polymer improved significantly ionic conductivity of the hyperbranched polymer electrolytes. The polymer electrolyte exhibited the electrochemical stability window of 4.2 V at 70 °C and was stable until 300 °C.  相似文献   

10.
The ionic conductivity of the bulk phase of bonded hydronium NASICON (HyceramTM) was measured at equilibrium with an H2O/N2 and then a D2O/N2 atmosphere, each at 100% relative humidity and 75% relative humidity over the temperature range 25°C to 50°C. At 100% relative humidity and 25°C, the protonic system had a bulk conductivity of 5.0×10−4 S/cm and an activation energy of 17.3kJ/mole; the same sample, when deuterated, had a bulk conductivity of 2.2×10−4 S/cm and an activation energy of 19.3kJ/mole. At 75% relative humidity and 25°C, the conductivity of the protonated system decreased to 1.4×10−4S/cm with an activation energy of 24.1 kJ/mole. The deuterated sample at 75% relative humidity had a bulk conductivity of 5.4×10−5 S/cm with an activation energy of 26.0 kJ/mole. The isotope effect suggested a proton hopping (Grotthus) mechanism as the means by which the protons pass through the lattice.  相似文献   

11.
Thin films of MnO were deposited by electron beam evaporation using a MnO or MnO2 source. The thin films were charaterized by X-ray and electron diffraction. The Coulomb titration curve reveals a potential plateau of 2.9 V over the composition range 0.05<x<2.0. The chemical diffusion coefficient of lithium in thin films at 15°C is 2.7×10−14 cm2/s for 0<x<0.01 and 2.2×10−15 cm2/s for 0.02<x<0.06. Good reversibility for lithium insertion and extraction is demonstrated by cyclic voltammetry.  相似文献   

12.
Absolute yields of the metastable excited atoms desorbed from the surfaces of solid Ne and Ar by the creation of surface and bulk excitons have been measured using monochromated synchrotron radiation as a selective excitation source. We have obtained the absolute yields of (2.3 ± 0.7) × 10−3, (1.4 ± 0.4) × 10−3, and (7.8 ± 2.3) × 10−4 atoms/photon at the excitation of S1, B1 and S′ exciton for Ne, respectively, and 1 × 10−5 atoms/photon at S1 excitation for Ar. The probability for metastable atom desorption is found to be about 2 to 10% at the excitation of S1 exciton on the surface of solid Ne.  相似文献   

13.
Cluster decay of 242Cm with emission of 34Si-particles was measured using track-recording phosphate glass detectors. The corresponding partial half-life is (1.4±0.3)×1023 s. The branching ratio relative to decay is 1.0×10−16 and relative to spontaneous fission 1.6×10−9.  相似文献   

14.
Impedance spectroscopy was used to study the oxygen reaction kinetics of La0.8Sr0.2MnO3 (LSM)-based electrodes on Y2O3-stabilized ZrO2 (YSZ) electrolytes. Three types of electrodes were studied: pure LSM, LSM–YSZ composites, and LSM/LSM–YSZ bilayers. The electrodes were formed by spin coating and sintering on single-crystal YSZ substrates. Measurements were taken at temperatures ranging from 550 to 850°C and oxygen partial pressures from 1×10−3 to 1 atm. An arc whose resistance Rel had a high activation energy, Ea=1.61±0.05 eV, and a weak oxygen partial pressure dependence, (PO2)−1/6, was observed for the LSM electrodes. A similar arc was observed for LSM–YSZ electrodes, where Rel(PO2)−0.29 and the activation energy was 1.49±0.02 eV. The combination of a high activation energy and a weak PO2 dependence was attributed to oxygen dissociation and adsorption rate-limiting steps for both types of electrodes. LSM–YSZ composite cathodes showed substantially lower overall interfacial resistance values than LSM, but exhibited an additional arc attributed to the resistance of YSZ grain boundaries within the LSM–YSZ. At 850°C and low PO2, an additional arc was observed with size varying as (PO2)−0.80 for LSM and (PO2)−0.57 for LSM–YSZ, suggesting that diffusion had become an additional rate limiting step. Bilayer LSM/LSM–YSZ electrodes yielded results intermediate between LSM and LSM–YSZ. The results showed that most of the improvement in electrode performance was achieved for a LSM–YSZ layer only ≈2 μm thick. However, a decrease in the grain-boundary resistance would produce much better performance in thicker LSM–YSZ electrodes.  相似文献   

15.
β-γ(CP) correlation measurements have been carried out on the sequence in the decay of the ground state of 49Ca to the (presumed) anti-analogue state at 3.105 MeV excitation in 49Sc. An asymmetry parameter of A = −0.132 ± 0.017 was obtained, making any spin-parity assignment other than very unlikely for the 3.105 MeV state. The deduced Fermi matrix element for the decay is |Mv| = |1.4 ± 9.7| × 10−3, which leads to an isospin impurity ( ) corresponding to the mixing of the analogue state (at 11.6 MeV) and the 3.105 MeV state of ||2 1.6 × 10−5. This leads in turn to an effective Coulomb matrix element of |Hc| = |3.9 ± 27.4| keV, a low value compared to the value of 100 keV obtained from a theoretical estimate based on simple shell-model wave functions for the single-particle states involved.  相似文献   

16.
The diffusion process of copper through grain boundaries of 500 nm thick ion-plated Ag-12at%Sn films was studied in the temperature range 100–250°C. The method is based on the determination of the time of first appearance of Cu on the Ag---Sn surface using Auger electron spectroscopy for determining trace amounts of Cu. An activation energy of Ea = 0.53 eV and a diffusivity of Do = 1.3 × 10−7cm2s−1 was obtained. For comparison, diffusion studies of Cu through ion-plated pure Ag layers have been performed. In this case an activation energy of Ea = 0.68 eV and a diffusivity of Do = 2.3 × 10−5cm2s−1 have been found.  相似文献   

17.
Absolute wavenumbers of 140 lines belonging to ν3 band of 16O12C32S, around 2060 cm−1, are measured under vacuum with a high resolution Fourier Spectrometer, within ±0.11 × 10−3 cm−1 (3.1 MHz) . They achieve a 20-fold improvement in accuracy over previous measurements and are consequently proposed as secondary infrared standards. Molecular constants are reported.  相似文献   

18.
An application of our developed silicon photodiode detector for radon progeny measurements is presented in this paper. It was determined the deposition velocity for free (3.6 ± 0.7) × 10−3 m s−1 and attached (1.0 ± 0.5) × 10−5 m s−1 fraction of short living radon progeny.  相似文献   

19.
Well-crystallized Ba0.5Sr0.5TiO3 thin films with good surface morphology were prepared on MgO(1 0 0) substrates by pulsed laser deposition technique at a deposition temperature of 800 °C under the oxygen pressure of 2 × 10−3 Pa. X-ray diffraction and atomic force microscopy were used to characterize the films. The full width at half maximum of the (0 0 2) Ba0.5Sr0.5TiO3 rocking curve and the root-mean-square surface roughness within the 5 μm × 5 μm area were 0.542° and 0.555 nm, respectively. The nonlinear optical properties of the films were determined by a single beam Z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that Ba0.5Sr0.5TiO3 thin films exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n2 = 5.04 × 10−6 cm2/kW and β = 3.59 × 10−6 (m/W), respectively.  相似文献   

20.
In our work single crystals of Mg4.5Na7(P2O7)4 were prepared, pulverized, pressed into pellets and sintered in order to measure the electrical conductivity of polycrystalline specimens. The conductivity was also measured on glassy specimens obtained by the melting of previously prepared crystals. The electrical conductivities at 25°C with values of the order of 10−16 Ω−1 cm−1 for polycrystalline samples and a value of the order of 10−14 Ω−1 cm−1 for glass, show that the glassy phase of Mg4.5Na7(P2 because of its greater molar volume and loosely packed structure, is a better matrix for ionic motion.  相似文献   

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