Effect of dehydration on the viscosity of sol-gel processed silica

For short times and low temperatures, the dehydration of silica gels is limited by the diffusion of water species. For long times and temperatures 600°C and higher, dehydration shows first order kinetics. That is dehydration rates decrease with increasing temperature where silica gels have less surface area and consequently fewer hydroxyls.

For comparison with samples treated isothermally, samples were heated to 600, 700, 800 and 850°C at 100°C intervals and held 4 h at each temperature starting with 500°C. Comparison of isothermal and multistep treatments shows the contributions of structural relaxation and dehydration to the viscosity. At a given temperature, two gels of different water content may show the same viscosity, because the difference in water is matched by the difference in degree of structural relaxation. More complete dehydration is accomplished by constant rate heating to a single isothermal treatment rather than heating in steps.     

The stability and surface reactivity of gallium phosphide nanocrystals

The stability and surface reactivity of Gal? nanocrystals were characterized by TG-DTA, XRD and XPS measurements. The samples were heated in O₂ and N₂ atmospheres respectively. The experimental curve which describes the mass change as a function of temperature shows that the mass decreases under 330°C but increases in two stages between 33°C and 550°C. The curves obtained in O₂ and N₂ are obviously different. The results of XPS indicate that the density of oxygen atoms bonded chemically to the gallium atoms on the surface increases when the sample is heated in O₂ up to 200°C, whereas the density of nitrogen atoms increased when heated to 330°C in N₂. It can be concluded that the N₂ could be activated on the surface of GaP nanocrystals at a rather low temperature, and highly reactive nitrogen atoms formed. Our result obtained makes it possible to synthesize a series of nitrogen-containing compounds in N₂ gas under moderate conditions.     

Sintering of silica gel derived from the alkoxysilane solution containing N,N-dimethylformamide

The sintering of three kinds of dried gels with different microstructures prepared from the tetramethoxysilane (TMOS) solutions containing N,N-dimethylformamide (DMF) with varying [H₂O]/[TMOS] mole ratios and different catalysts was investigated by measuring the pore size distribution, the Vickers hardness, the linear shrinkage and the apparent density of the gels heated to various temperatures. The marked shrinkage of the pores started at temperatures above 900 °C. The temperature required for the conversion of a gel to a pore-free silica glass depended on the average size of the pores contained in the dried gels; the average pore sizes of about 50 Å, 75 Å and 100 Å corresponded to 1040 °C, 1060°C and 1080°C, respectively. The Vickers hardness, the linear shrinkage and the density of the gel showed a corresponding change with a change in heating temperature.     

Modelling of Cu thin film growth by MOCVD process in a vertical reactor

Transport phenomena in a vertical reactor for metalorganic chemical vapor deposition (MOCVD) of copper thin films have been analyzed by numerical simulation of the process. The equations of the mathematical model were solved numerically using the Galerkin finite element method, Newton-Raphson iterations and the frontal algorithm for the gas flow structure, temperature distribution and concentration distribution of the reacting species. Deposition rates of copper thin films using Cu(hfac)VTMS as a precursor were estimated from numerical solutions. Standard process conditions were selected as: a reactor pressure of 1 Torr, a substrate temperature and inlet gas temperature of 200°C and 70°C, respectively, and an inlet gas flow rate of 50 sccm. Under standard conditions, the deposition rates of copper were in the range of 160–230 Å/min. The effects of the process conditions, reactor geometry and shower head structure on the deposition rate and thickness uniformity were examined. It has been demonstrated that numerical simulation can be used for improving the film thickness uniformity and the utilization of source gas.     

Structural transformation of the TiO2---SiO2 system gel during heat-treatment

The gel formation of the (100-x)TiO₂·xSiO₂ (x = 0–10 mol%) system has been studied. The progressive elimination of residues was followed by DTA and TGA curves. DTA curves showed that the formation of anatase during heat treatment could be sensibly slowed down with the increase of SiO₂. The relationship between the gel composition and crystallization temperature of anatase has been systematically investigated. The X-ray diffraction spectra demonstrated that the crystallization temperature of anatase is 400°C for TiO₂ gel and 430°C for 90TiO₂ - 10SiO₂ gel. The infrared absorption spectra were used to follow the structural transformation of gels heat-treated at different temperatures. With the help of EPR it is evident that titanium ions exist only in tetravalence.     

Influence of solution constituents, solution conditioning and seeding on the crystalline phase of aluminium hydroxide using in situ X-ray diffraction

Filtering, drying and aging of crystalline solids can affect crystalline phase(s) and therefore ex situ X-ray diffraction is not necessarily indicative of the in situ crystalline components. This paper examines some of the factors affecting the crystallised phase of aluminium hydroxides in highly caustic solutions. Caustic aluminate solutions were prepared using several different methodologies. Where solutions were prepared from aluminium metal, gibbsite and bayerite were observed to be the crystallisation products. Where gibbsite was used as the aluminium source in the liquors, the crystallised phase was found to be a function of solution conditioning. Solutions prepared at 100°C and at atmospheric pressure crystallised to form only gibbsite. These same solutions subsequently heated to 160°C for 16 h crystallised as gibbsite and bayerite. It has been concluded from these results that the caustic aluminate solutions made using gibbsite were not dissolved on the molecular scale (although optically clear) if the solutions were heated to only 100°C. Further heating at elevated temperatures completed the dissolution process so that the species in solution were similar to those found in solutions made from aluminium metal. Solutions seeded with either bayerite or gibbsite crystallised to form only gibbsite. Only crystallisation in the bulk solution and not on the seed surfaces was recorded. In some cases seeding altered the expected crystallisation products, i.e. from gibbsite and bayerite to only gibbsite.     

Hydrolytic resistance of Na2O---B2O3---SiO2 gels prepared by sol-gel process

Alkoxide derived gels were prepared in the system Na₂O---B₂O₃---SiO₂. The gel compositions were situated in the liquid-liquid immiscibility area of the phase equilibrium diagram.

Hydrolytic resistance tests were performed on the gels heat-treated at temperatures ranging between 120 to 850 °C. The Na₂O, B₂O₃ and SiO₂ extracted from the attack gels were analyzed. The experimental results indicate that the amount of B₂O₃ has a significant influence on the chemical durability of the heat-treated gels. At temperatures of 850 °C the greater the B₂O₃ mol% the greater are the amounts of Na₂O and B₂O₃ extracted. Different behaviour was observed for gels heat-treated at 600 °C where the amounts of B₂O₃ and Na₂O extracted slightly increases as the B₂O₃ mol% increases. Small amounts of extracted SiO₂ were always observed.

These results are complemented with other measurements so that an explanation of the controlling mechanism is given.     

Stability of lithium silicate gels

Lithium silicate gels with 15 mol% Li₂O were prepared by combining a lithium nitrate solution with partially hydrolyzed tetraethyl orthosilicate (TEOS). Using low pH and high water levels, samples were cast, gelled, and dried to form cylinders 30 mm in length and 5 mm in diameter in about a week. The dried gels had a uniform lithium content throughout. Lithium disilicate crystals and quartz crystals appeared in samples heated above 600°C.     

A study of growth and morphological features of TiOxNy thin films prepared by MOCVD

The growth and morphological features of MOCVD TiO_xN_y films have been characterized to evaluate the effect of various process parameters on film growth. XRD analysis of the films deposited at 600°C on Si(1 1 1) and mica show a TiN(1 1 1) peak at 2θ=36.6°, but only anatase peaks are detected below 550°C. Above 650°C, both anatase and rutile peaks are detected. The presence of ammonia is not effective below 550°C as the deposited film is mostly TiO₂. Also, ammonia does not play any role in homogeneous nucleation in the gas phase, as evident by the deposition of anatase/rutile particles above 650°C. The following changes in the morphological features are observed by varying process parameters. By increasing the ratio of titanium-isopropoxide to ammonia flow, the cluster shape changes from angular to rounded; dilution of the flow results in larger elongated clusters; increase in flow rate at constant precursor to ammonia ratios, changes the cluster shape from rounded to elongated and the cluster size deceases. Deposition at higher temperatures results in finer clusters with a slower growth rate and eventually results in a very thin film with particle deposition at 650°C and above.     

Hydrogenated amorphous silicon with substrate-dependent structure

Hydrogenated amorphous silicon (a-Si:H) thin films grown at 250°C on (1 0 0) crystalline substrate using plasma-enhanced chemical vapor deposition (PECVD) with SiH₄/H₂ gas flow ratio equal to 5/1 (sccm) are investigated by transmission electron microscopy. It is found that the thin film is totally amorphous when grown on a glass substrate. But when the substrate is changed to crystalline silicon, some crystalline grains are found embedded in the amorphous structure in certain regions even if the thickness of the film reaches 600 nm. It is suggested that the amorphous silicon film grown on a crystalline silicon substrate at a temperature of 250°C without heavy H₂ dilution is a mixed network of a small amount of crystalline silicon and the major portion of amorphous silicon.     

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

Epitaxial ZnO thin films have been grown on Si(1 1 1) substrates at temperatures between 550 and 700 °C with an oxygen pressure of 60 Pa by pulsed laser deposition (PLD). A ZnO thin film deposited at 500 °C in no-oxygen ambient was used as a buffer layer for the ZnO growth. In situ reflection high-energy electron diffraction (RHEED) observations show that ZnO thin films directly deposited on Si are of a polycrystalline structure, and the crystallinity is deteriorated with an increase of substrate temperature as reflected by the evolution of RHEED patterns from the mixture of spots and rings to single rings. In contrast, the ZnO films grown on a homo-buffer layer exhibit aligned spotty patterns indicating an epitaxial growth. Among the ZnO thin films with a buffer layer, the film grown at 650 °C shows the best structural quality and the strongest ultraviolet (UV) emission with a full-width at half-maximum (FWHM) of 86 meV. It is found that the ZnO film with a buffer layer has better crystallinity than the film without the buffer layer at the same substrate temperature, while the film without the buffer layer shows a more intense UV emission. Possible reasons and preventive methods are suggested to obtain highly optical quality films.     

Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

We have studied the impact of several Si selective epitaxial growth (SEG) process on the agglomeration of ultra-thin, patterned silicon-on-insulator (SOI) layers. Through a careful analysis of the effects of the in situ H₂ bake temperature (that followed an ex situ “HF-last” wet cleaning) and of the silicon growth temperature on the SOI film quality, we have been able to develop a low-temperature SEG process that allows the growth of Si on patterned SOI layers as thin as 3.4 nm without any agglomeration or Si moat recess at the Si window/shallow trench isolation edges. This process consists of an in situ H₂ bake at 650 °C for 2 min, followed by a ramping-up of the temperature to 750 °C, then some SEG of Si at 750 °C using a chlorinated chemistry (i.e. SiH₂Cl₂+HCl).     

Characterization and chemical durability of 70Ph2SiO·30TiO2 coating prepared by the sol-gel process

70Ph₂SiO·30TiO₂ coatings on slide glass and phosphate glass substrates have been prepared by the sol-gel process. Experimental results on the characterization and chemical durability of the coatings are presented. It is shown that the coatings heated at 150°C have reasonably good acid and water resistance while their alkali durability is very poor. The XPS results are used to verify the different corrosion behaviors of the coating in pure water and 1N HC1 solutions. The chemical durability of phosphate glass can be significantly improved by this coating.     

Structure and optical properties of amorphous silicon oxide thin films with different porosities

Amorphous silicon oxide thin films were prepared by evaporation of a silicon oxide powder. Samples were prepared under ultrahigh vacuum, under a flow of hydrogen ions or under a molecular hydrogen atmosphere. Two others sets of samples were prepared using deuterium instead of hydrogen. These five groups of samples were then annealed to different temperatures up to 950 °C and were exposed to the ambient air. The samples present different densities and microstructures. The sample prepared under ultrahigh vacuum is dense, hydrogen free and OH-bond free. Samples prepared under atomic hydrogen and deuterium flows contain Si–H and Si–D bonds, respectively, and are OH-bond free. The sample prepared under a molecular hydrogen atmosphere is very similar to that prepared under a molecular deuterium atmosphere. Both samples are porous and contain Si–H bonds and OH-groups coming from the exposure to the air. All the samples show visible photoluminescence attributed to isolated silicon clusters. The photoluminescence intensity increases with thermal annealing post-treatments up to an optimal annealing temperature. This maximum value is equal to 650 °C for the unhydrogenated sample and the sample prepared under an atomic hydrogen flow and to 800 °C for the sample prepared under a molecular hydrogen atmosphere. This difference is correlated to the different microstructures of the samples. Moreover the strongest photoluminescence intensity is obtained for the porous sample.     

Raman and infrared spectra on silica gel evolving toward glass

Infrared and Raman spectra of gels obtained from specially prepared solutions of Si(OC₂H₅)₄ (TEOS) which have been thermally treated in the 40–800°C temperature range, are reported and discussed with reference to the spectra of fused quartz.The results show that the gel to glass transformation is an hydrolytic polycondensation process, which takes plase gradually and is practically completed in the samples treated at 800°C.Particularly revealing is the behaviour of the bands due to OH (associated and/or unassociated H-bonded) stretching modes, including those of water, which are weakened by increasing temperature; the behaviour of the band due to the SiOH stretching mode; the behaviour of the network bands, some of which become more intense with increasing temperature, due to asymmetric and symmetric stretching and the bending SiOSi modes.In the Raman spectra of gels heated at different temperatures two peaks also appear at ≈600 and ≈490 cm^?1, which are also present in the Raman spectrum of fused quartz, they are related to network defects of the glass structure, for which no definite interpretation has yet been given in the literature.     

Physical properties of Ag-doped cadmium telluride thin films fabricated by closed-space sublimation technique

Cadmium telluride (CdTe) thin films were prepared by the closed-space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the annealed films at 450 °C for 30 min were dipped in AgNO₃–H₂O solution at room temperature. These films were again annealed at 450 °C for 1 h to obtain silver-doped samples. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrically i.e. DC electrical resistivity as well as photo resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum, and spectrophotometry. The electron microprobe analyzer (EMPA) results showed an increase of Ag content composition in the samples by increasing the immersion time of films in solution. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by doping of Ag. A significant change in the shape and size of the CdTe grains were observed.     

Formation of LiNbO3 films by hydrolysis of metal alkoxides

Homogeneous, crack-free, thin films of crystalline LiNbO₃ were synthesized above 250°C on Si(100) substrates by the dip-coating method using a double alkoxide solution. The coating solution, which was prepared by the controlled partial hydrolysis of the double alkoxide, gave stoichiometric LiNbO₃ crystalline films at temperatures as low as 250°C. The concentration of the alkoxide solution influenced both of thickness and quality of films. Crystallinity of thin film top-coated directly on the substrate affected the crystallization state of films coated on the film remarkably. Films crystallized on -Al₂O₃(0001) showed preferred orientation along the c-axis, while the preferred orientation could not be observed on Si(100) substrates.     

Densification kinetics of porous colloidal P2O5-doped silica gels using constant heating rate measurements

Commercially available fumed colloidal silica was gelled in an aqueous solution containing PO₄H₃. Instantaneous gelation was obtained by adding several drops of HF (48 wt%). The objective of this paper was to study the gel-to-glass conversion of these colloidal gels using constant heating rate (CHR) experiments.

Gel densification was measured at temperatures ranging from 50 to 1550°C at different heating rates (1 to 10°C/min) using a dilatometer.

Shrinkage and shrinkage rate as a function of temperature were measured and CHR equations were used to derive information on the densification mechanisms.

The experimental results show that small additions of PO₄H₃ into pure silica dispersions give rise to gels which densify to high silica glass at much lower temperatures than pure colloidal silica gels. The bloating effects produced by pure colloidal silica gels at temperatures above 1280°C were also eliminated. For these P₂O₅-doped silica gels maximum shrinkage rates were found at temperatures between 1050 and 1150°C according to the heating rate used.

The CHR analysis showed that several different mechanisms seem to operate in a complex interdependence in the whole range of temperature studied. This CHR analysis was compared with those results obtained from isothermal shrinkage experiments in the range where viscous sintering is the predominant shrinkage-controlling mechanism (between 1000 and 1100°C).     

A novel strategy for the preparation of yttria-stabilized zirconia powders: Deposition and scratching of thin films obtained by the sol-gel method

In the present work, an alternative to the traditional sol-gel method is reported. The gel is deposited on a wide flat glassy surface so that a very thin film of solid is obtained after evaporation of the solvent. The yttria-stabilized zirconia powders are recovered by removing the referred film from the glassy surface and subsequent milling. The samples have been characterized by Scanning Electron Microscopy (SEM), nitrogen adsorption at −196 °C and Fourier Transform Infrared (FT-IR) spectroscopy. The experimental results show that the 3 mol% yttria-stabilized zirconia (3YSZ) powders prepared by drying of thin films at 100 °C exhibit extremely low values of specific surface area and pore volumes. Furthermore, the proportion of solvent or the type of alcohol used in the preparation of the powders play a very important role in the textural properties of the 3YSZ powders. In this connection, for samples prepared by varying the propanol proportion an increase in the volume of this solvent leads to larger values of specific surface area and pore volumes. On the other hand, an increase in the molecular size of the alcohol used as the solvent leads to a noticeable development of the textural parameters.     

Sodium borosilicate glasses prepared by the sol-gel process

A sodium borosilicate gel of composition 80SiO₂·15B₂O₃·5Na₂O (wt%) was prepared from tetraethyl orthosilicate, trimethyl borate, sodium methylate, H₂O, and HCl as the catalyst. Variation of specific surface area and porosity as a function of heating temperature indicated that closed pores were opened at temperatures lower than 400°C and collapsed above 450°C. From TG and DTA curves, about 19% Si and B atoms are evaluated to have −OH bonds. X-ray diffraction patterns indicated crystallization of low-cristobalite out of the gel when it was heated at 700°C for 5 h, showing a difference from a melt-quenched glass of the same composition.