Temperature dependent ultrasonic properties of aluminium nitride

Hexagonal wurtzite structured aluminium nitride has been characterized by the theoretical calculation of ultrasonic attenuation, ultrasonic velocity, higher order elastic constants, thermal relaxation time, acoustic coupling constants and other related parameters in temperature range 200-800 K for wave propagation along the unique axis of the crystal. Higher order elastic constants of AlN at different temperatures are calculated using Lennard-Jones potential for the determination of ultrasonic attenuation. A decrease in ultrasonic velocity with temperature has been predicted, which is caused by reduction in higher order elastic constants with temperature. The temperature dependent ultrasonic properties have been discussed in correlation with higher order elastic constants, thermal relaxation time, thermal conductivity, acoustic coupling constants and thermal energy density. Anomalous behaviour of the attenuation is found at 400 K. On the basis of attenuation, the ductility and performance of AlN have been studied.     

Metallic-like conductivity of asymmetric <Emphasis Type="Italic">p</Emphasis>-In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As quantum wells

The temperature dependence of the conductivity of the two-dimensional hole gas in an asymmetric GaAs/In _x Ga_{1 ? x} As/GaAs quantum well has been investigated. It is shown that fast spin relaxation leads to metallic-like behavior of the temperature dependence of the conductivity.     

Effect of Miniband Dispersion on Inelastic Scattering of Superlattice Electrons by Acoustic Phonons

Within the framework of the Boltzmann equation, formulas for calculating the effective relaxation time and mobility of superlattice electrons are derived with allowance for inelastic scattering on acoustic phonons and dispersion of the miniband energy spectrum depending on the longitudinal wave vector. The dependences of longitudinal and transverse mobilities of the nondegenerate electronic gas of the GaAs/Al_0.36Ga_0.64As superlattice with the quantum well 5 nm wide on the potential barrier width and temperature are analyzed numerically. It is demonstrated that inelasticity of scattering and miniband dispersion significantly increase the electron mobility, and its temperature dependence becomes more pronounced at low temperatures.     

Temperature dependence of the spin-lattice relaxation time for quadrupole nuclei under conditions of NMR line saturation

The contributions of different mechanisms of nuclear spin-lattice relaxation are experimentally separated for ⁶⁹Ga and ⁷¹Ga nuclei in GaAs crystals (nominally pure and doped with copper and chromium), ²³Na nuclei in a nominally pure NaCl crystal, and ²⁷Al nuclei in nominally pure and lightly chromium-doped Al₂O₃ crystals in the temperature range 80–300 K. The contribution of impurities to spin-lattice relaxation is separated under the condition of additional stationary saturation of the nuclear magnetic resonance (NMR) line in magnetic and electric resonance fields. It is demonstrated that, upon suppression of the impurity mechanism of spin-lattice relaxation, the temperature dependence of the spin-lattice relaxation time T₁ for GaAs and NaCl crystals is described within the model of two-phonon Raman processes in the Debye approximation, whereas the temperature dependence of T₁ for corundum crystals deviates from the theoretical curve for relaxation due to the spin-phonon interaction.     

Temperature dependence features of the photoluminescence spectral distribution of Li2B4O7 and Li2B4O7:Cu

The temperature dependence of the photoluminescence (PhL) spectral distributions has been reported for the lithium tetraborate Li₂B₄O₇ (LTB) and Li₂B₄O₇:Cu (LTB:Cu) single crystals and for glassy LTB:Cu. It was found that the emission peaks of the LTB and LTB:Cu single crystals are non-elementary and splittable by temperature increase into several elementary peaks. By the sample heating the temperature quenching of PhL as well as the redistribution of the PhL intensity among elementary peaks was observed. Heating of the LTB:Cu single crystal samples caused no shift of the spectral maxima of the individual PhL peaks. The curve describing the temperature dependency of individual PhL peaks for the LTB:Cu single crystal is characterized by maxima resulting from combination of PhL and thermostimulated luminescence (TSL). The PhL intensity for glassy LTB:Cu is significantly lower than that for LTB:Cu single crystal with the equivalent copper dopant content. As compared to the LTB:Cu single crystal, the PhL spectral maximum for glassy LTB:Cu is wider and shifted to the lower energy range. Heating of the glassy LTB:Cu sample results in the PhL temperature quenching without any shift of the spectral maximum.     

Dielectric and AC ionic conductivity investigations in K3H(SeO4)2 single crystal

Optical observation under the polarizing microscope and DSC measurements on K₃H(SeO₄)₂ single crystal have been carried out in the temperature range 25-200 °C. It reveals a high-temperature structural phase transition at around 110 °C. The crystal system transformed from monoclinic to trigonal. Electrical impedance measurements of K₃H(SeO₄)₂ were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The temperature dependence of electrical conductivity indicates that the sample crystal became a fast ionic conductor in the high-temperature phase. The frequency dependence of conductivity follows the Jonscher's universal dynamic law with the relation σ(ω)=σ(0)+Aωⁿ, where ω is the frequency of the AC field, and n is the exponent. The obtained n values decrease from 1.2 to 0.1 from the room temperature phase to fast ionic phase. The high ionic conductivity in the high-temperature phase is explained by the dynamical disordering of protons between the neighboring SeO₄ groups, which provide more vacant sites in the crystal.     

Structural, vibrational, thermal, and conductivity studies on proton-conducting polymer electrolyte based on poly (N-vinylpyrrolidone)

The proton-conducting polymer electrolytes based on poly (N-vinylpyrrolidone) (PVP), doped with ammonium chloride (NH₄Cl) in different molar ratios, have been prepared by solution-casting technique using distilled water as solvent. The increase in amorphous nature of the polymer electrolytes has been confirmed by XRD analysis. The FTIR analysis confirms the complex formation of the polymer with the salt. A shift in glass transition temperature (T _g) of the PVP/NH₄Cl electrolytes has been observed from the DSC thermograms which indicates the interaction between the polymer and the salt. From the AC impedance spectroscopic analysis, the ionic conductivity of 15?mol% NH₄Cl-doped PVP polymer complex has been found to be maximum of the order of 2.51?×?10^?5?Scm^?1 at room temperature. The dependence of T _g and conductivity upon salt concentration has been discussed. The linear variation of the proton conductivity of the polymer electrolytes with increasing temperature suggests the Arrhenius type thermally activated process. The activation energy calculated from the Arrhenius plot for all compositions of PVP doped with NH₄Cl has been found to vary from 0.49 to 0.92?eV. The dielectric loss curves for the sample 85?mol% PVP:15?mol% NH₄Cl reveal the low-frequency ?? relaxation peak pronounced at high temperature, and it may be caused by side group dipoles. The relaxation parameters of the electrolytes have been obtained by the study of Tan?? as a function of frequency.     

Ultrasonic relaxation in Zinc-Borate glasses

Borate glasses in the system (1 − x) [29Na₂O − 4Al₂O₃ − 67B₂O₃] − x ZnO with (x = 0, 5, 10, 15, 20, 25, 30, and 35 mol%), have been prepared by the melt quenching technique. The longitudinal ultrasonic attenuation of the prepared sample has been measured using the pulse echo technique at ultrasonic frequencies 2, 4, 6 and 8 MHz in the temperature range between 160 and 300 K. The results showed well-defined peak whose position shifts toward higher temperature with increasing frequency. The mean activation energy is strongly composition sensitive. The position and overall shape of the loss peaks in dependence on composition were analyzed in terms of an assumed loss of standard linear solid type with low dispersion, and a broad distribution of Arrhenius-type relaxation with temperature independent relaxation strength. The dependence of ultrasonic attenuation on temperature has been interpreted in terms of a thermally activated relaxation process which arises when ultrasonic waves disturb the equilibrium of an atom moving in a double-well potential in the glass network. The dependence of activation energy on composition suggests that the structure of these glasses changes at 15 mol% ZnO concentration.     

Dielectric property of CaCu3Ti4O12 thin film grown on Nb-doped SrTiO3(100) single crystal

Thin film of CaCu₃Ti₄O₁₂ (CCTO) has been deposited on Nb-doped SrTiO₃(100) single crystal using pulsed laser deposition. The dielectric constant and AC conductivity of CCTO film in the metal–insulator–metal capacitor configuration over a wide temperature (80 to 500 K) and frequency (100 Hz to 1 MHz) range have been measured. The small dielectric dispersion with frequency observed in the lower temperature region (<300 K) indicates the presence of small defects in the deposited CCTO thin film. The frequency-dependent AC conductivity at lower temperature indicates the hopping conduction. The dielectric dispersion data has been analyzed in the light of both conductivity relaxation and Debye type relaxation with a distribution of relaxation times. Origin of dielectric dispersion is attributed to the distribution of barrier heights such that some charge carriers are confined between long-range potential wells associated with defects and give rise to dipolar polarization, while those carriers which do not encounter long-range potential well give rise to DC conductivity.     

空位所引起的晶体弹性常数的改变

认为具有少量空位的晶体是一个均匀的晶体,把完整与不完整晶体的区别,归结为势函数的修改。应用Morse函数推导出弹性常数c₁₁和c₁₂的变化率与空位浓度的关系。因为空位邻近的原子有松弛,考虑了由松弛而改变了的相互作用对弹性常数的影响。首先求得铝中空位的第一和第二最近邻的位移百分率各为1.61和-0.32,这里的正号和负号各表示向空位移进和移出。其次,进行了具体的计算,在铜晶体中,估计1％的空位浓度使弹性常数减小1.3—1.4％。然而,铝晶体中的空位对弹性常数的影响     

Propagation of ultrasonic waves in neptunium monochalcogenides

The ultrasonic attenuation and acoustic coupling constants due to phonon–phonon interaction and thermoelastic relaxation mechanisms have been studied for longitudinal and shear waves in B₁ structured neptunium monochalcogenides NpX (X: S, Se, Te) along 〈1 0 0〉 direction in the temperature range 100–300 K. The second and third order elastic constants (SOEC and TOEC) of the chosen monochalcogenides are also computed for the evaluation of ultrasonic parameters. The ultrasonic attenuation due to phonon–phonon interaction process is predominant over thermoelastic relaxation process in these materials. The ultrasonic attenuation in NpTe has been found lesser than other materials NpS, NpSe and GdY (Y: P, As, Sb and Bi). The semiconducting or semimetallic nature of neptunium monochalcogenides can be well understood with the study of thermal relaxation time. Total ultrasonic attenuation in these materials is found to be quadratic function of temperature. The nature of NpTe is very similar to semimetallic GdP. The mechanical and ultrasonic study indicates that NpTe is more reliable, perfect, flawless material.     

Mechanical detection of nuclear spin relaxation in a micron-size crystal

A room temperature nuclear magnetic resonance force microscope (MRFM), fitted in a 1 tesla electromagnet, has been used to measure the nuclear spin relaxation of ¹H in a micron-size (70 ng) crystal of ammonium sulfate. NMR sequences, combining both pulsed and continuous wave radio-frequency fields, have allowed us to measure mechanically T₂ and T₁, the transverse and longitudinal spin relaxation times. Because two spin species with different T₁ values are measured in our 7 μm thick crystal, magnetic resonance imaging of their spatial distribution inside the sample section have been performed. To understand quantitatively the measured signal, we carefully study the influence of spin-lattice relaxation and non-adiabaticity of the continuous-wave sequence on the intensity and time dependence of the detected signal. Received 23 February 2000     

Ultrasonic wave propagation in IIIrd group nitrides

The ultrasonic attenuation in hexagonal structured (wurtzite) third group nitrides (GaN, AlN and InN) has been evaluated at 300 K for an ultrasonic wave propagating along the unique axis of the crystal. Higher order elastic constants of these materials are calculated using the Lennard-Jones potential for the determination of ultrasonic attenuation. The ultrasonic velocity, Debye average velocity, thermal relaxation time and acoustic coupling constant are evaluated along the z-axis of the crystal using the second order elastic constants and other related parameters. The contributions of the elastic constants, thermal conductivity, thermal energy density, ultrasonic velocity and acoustic coupling constant to the total attenuation are studied. On the basis of the ultrasonic attenuation, it can be concluded that the AlN is more ductile than either GaN or InN at 300 K. Orientation dependent characterization has been achieved by calculation of the orientation dependent ultrasonic velocity, Debye average velocity and thermal relaxation time for the materials.     

A phenomenological theory of ultrasonic attenuation in ferroelectrics

The complex damping constant of an ultrasonic wave in a ferroelectric crystal which is non-piezoelectric above the Curie temperature was calculated in the hydrodynamic approximation. The interaction of the ultrasound with polarization waves is expressed in terms of electrostrictive constants. Ferroelectrics both of the relaxation and displacive type are treated in an unified way. The frequency and temperature dependence of the sound attenuation constant and frequency shift was studied in detail for two typical representatives of ferroelectrics, i.e. barium titanate and tri-glycine sulphate.The author gratefully acknowledges the help of Dr. L. Murtinová with some calculations.     

Dependence of the intrinsic line width of surface states on the wave vector: The Cu(111) and Ag(111) surfaces

The dependence of the intrinsic line width Γ of electron and hole states due to inelastic scattering on the wave vector k _∥ in the occupied surface state and the first image potential state on the Cu(111) and Ag(111) surfaces has been calculated using the GW approximation, which simulates the self-energy of the quasiparticles by the product of the Greens’s function and the dynamically screened Coulomb potential. Different contributions to the relaxation of electron and hole excitations have been analyzed. It has been demonstrated that, for both surfaces, the main channel of relaxation of holes in the occupied surface states is intraband scattering and that, for electrons in the image potential states, the interband transitions play a decisive role. A sharp decrease in the intrinsic line width of the hole state with an increase in k _∥ is caused by a decrease in the number of final states, whereas an increase in Γ of the image potential state is predominantly determined by an increase of its overlap with bulk states.     

Cu 表面性质的第一性原理分析

采用第一性原理赝势平面波方法, 计算并详细分析了面心立方Cu晶体及其 (100), (110) 和 (111) 这3个低指数表面的原子结构、 表面能量及表面电子态密度. 表面能的计算结果表明, Cu (111) 表面的结构稳定性最好, Cu (100) 表面次之, Cu (110)表面的结构稳定性最差. 3个表面的表面原子弛豫量随着层数的增加而逐渐减弱. Cu (110) 表面的最表层原子相对收缩最大, Cu (100)表面次之, Cu (111) 表面的最表层原子相对收缩最小. 表面原子弛豫不仅引起表面几何结构的变化, 而且使表面层原子的电子态密度峰形相对晶体内部发生变化, 这是表面能产生的主要原因, 而Cu (110)表面相对于Cu (100)与Cu (111)表面具有高表面活性的主要原因则源于其表面层原子电子态密度在高能级处的波峰相对晶体内部显著的升高. 关键词： Cu 晶体 表面结构 表面能 态密度     

Surface size effects under plastic deformation of microcrystals and nanocrystals

The size effects associated with the crystal surface as an effective sink for moving dislocations in a thin crystal and as a barrier for these dislocations in the presence of a high-strength film or a special hardened layer on the surface, which favor the accumulation of dislocations in the crystal, have been considered theoretically in terms of the kinetic equation for the density of dislocations concentrated in the crystal in the critical lengths of single-ended (unipolar) dislocation sources. The theoretical results have been illustrated by the experimental data available in the literature for microcrystals and nanocrystals of copper and aluminum. It has been found in accordance with these data that the dependence of the yield stress ??_2% of the crystal on the crystal transverse size D has the form ??_2% ?? D ^?0.75 when there is a free crystal surface for the escape ofthe dislocations and ??_2% ?? D ^?0.5 when there is a high-strength layer on the lateral surface of the crystal..     

非晶态快离子导体(AgI)x(Ag4P2O7)1-x的声学性质

用液氮骤冷方法制备了(AgI)_x(Ag₄P₂O₇)_1-x系列非晶态快离子导体。对AgI摩尔浓度x=0.50,0.60,0.67,0.75,0.80的样品,在77—300K温度范围及2,5,10,15MHz的频率上测量了纵波和横波的超声衰减和声速。发现在200—240K附近存在一个异常强的弛豫型超声吸收峰,随AgI含量的增加,该峰的位置向低温方向移动,且峰的高度增大。在实验的温度范围内,观察到纵波和 关键词：     

Acoustic properties of multiferroic BiFeO<Subscript>3</Subscript> over the temperature range 4.2–830 K

The longitudinal acoustic wave velocity and attenuation in BiFeO₃ ceramics have been measured by ultrasonic pulse-echo technique at a frequency of 10 MHz in the temperature range from 4.2 K to 830 K. The anomalies observed in the sound velocity and attenuation behavior versus temperature are attributed to the assumed relaxation in the temperature range 200–500 K and antiferromagnetic phase transition at higher temperatures. Order parameter fluctuations along with magnetostriction are discussed as the factors determining the acoustic wave velocity anomaly in the vicinity of the antiferromagnetic phase transition point.     

NMR study of KCuF3 at low temperatures

The NMR of F¹⁹ nuclei in KCuF₃ has been measured in the a-type single crystal at 1.7 K. Two types of magnetic domains exist; one occupies most part of the crystal and has easy axis along <110>, and the other occupies the rest of the crystal and has easy axis along <100>. In both domains the moment directions are distributed around the easy axes over a considerable angular range. The spin-flop begins with nearly zero applied field in the <110>;-domain. When the magnetic field is rotated in the c-plane, an angular dependence has been observed for those F¹⁹ nuclei which lie on the c-axis. This dependence arises from the alternate stacking of the ground state wave functions of Cu²⁺ ions.