硅钼蓝分光光度法测定硅肥中有效硅

本文采用硅钼蓝分光光度法测定硅肥中有效硅的含量,通过研究浸取剂、振荡频率以及称样量等条件对有效硅提取量的影响,确定了样品溶解方式。探讨了酸度、显色时间、波长等因素对硅钼蓝吸光度的影响。同时,对优化后的硅钼蓝分光光度法进行精密度和准确度试验,多次重复测定的极差小于0.60%,标准偏差小于0.20%,加标回收率在98.5%~101.3%之间。结果表明优化后的硅钼蓝分光光度法具有良好的重现性和精密度。     

硅烯

硅烯是有机化学中一类基本的反应活性中间体,本文从制备方法、化学反应以及它们的结构等几个方面对硅烯化学作简要的介绍。     

硅及硅基负极材料的研究进展

硅（Si）具有极高的理论容量、 较低的电压平台和丰富的自然资源, 有成为下一代高能量密度锂离子电池负极材料的潜力. 但Si不同于石墨, 其固有电导率低, 循环过程中体积变化巨大, 不宜直接作为负极材料. 因此出现了许多从维度结构、 复合材料、 黏结剂和电解质等方面改善或适配Si基负极材料的改性方案, 以使其满足商业化的要求. 本文综合评述了近年Si基负极材料的研究进展, 总结了不同方面的设计要素, 介绍了代表性材料的性能表现, 最后, 对目前Si基材料面临的问题进行了简要分析, 并展望了其作为锂离子电池负极的研究前景.     

锰硅合金中硅的测定

锰硅合金可作为炼钢脱氧剂。根据合金中含锰和含硅量不同 ,分为各种牌号的合金 ,所以合金中含硅量的数据也要求准确。锰硅合金中硅的测定 ,原采用锰铁合金中硅的分析方法进行测定 ,因锰硅合金中硅含量较锰铁合金中硅含量高 ,试样不易溶解完全 ,锰与铁也不易分离完全 ,至使分析结果偏高。后又采用铁 (镍 )坩埚碱熔 ,试样虽溶解完全 ,但在溶样过程中试样易溅出 ,造成损失 ,且碱熔时易将铁 (镍 )坩埚腐蚀而转入试液中 ,洗二氧化硅沉淀时难于洗净 ,至使结果偏高。为此 ,经试验 ,采用盐酸 -过氧化氢溶样 ,动物胶重量法测定锰硅合金中的硅 ,经试验…     

硅取代聚烷硅的合成与表征

硅取代聚烷硅的合成与表征;聚甲基硅烷;高分子反应     

硅有机化学

(一)硅有机物的发展及其工业意义硅有三种同位素(28,29,30)。自然界中的分布量仅次于氧而居第二位。它构成地壳的27%,并且为机体生存的必要组成之一。还在1811年已经制得了硅:SiF_4 Na→Si 4NaF在1825年首先制得四氯化矽:Si 2Cl_2(?)SiCl_4在1842年获得硅有机物:SiCl_4 4C_2H_5OH→Si(OC_2H_5)_4 4HCl到1890年的这一期间合成了某些硅化物 R_nSiX_(4-n)     

多孔硅研究进展

综述多孔硅的形成规律，介绍其各种物理、化学特性和形成机制等，并以多孔硅电致光发射器件的研制为主，讨论它的应用技术。     

硅与人类文明

硅是自然界中分布最广的元素之一。硅及其化合物的优良性能被科学家发现以后,它们推动了人类社会的发展,产生了一些新兴的学科,促进了新材料的发展。有机硅和新型硅胶的广泛使用,使人造人体器官有了实质性的进展。由于新型陶瓷的不断发现,人类将重返“石器”时代。     

阿硅正传

Silicon is the second most abundant element in the earth's crust, and its compounds are indispensable in our production and life. The application and prospect of Silicon and its compounds are described in this paper from the perspective of Silicon's past life, present life and future.     

稀土硅镁合金中硅的快速测定

该合金中硅的测定通常采用重量法,手续繁杂、费时,又需用铂器皿进行残渣处理。近年来,不少单位介绍用硅钼蓝比色法,手续虽简便、快速,但因显色时分取试样少引起误差较大,不易满足需要。本文采用氟硅酸钾容量法进行了试验,结果表明:该法以硝酸-氢氟酸分解试样反应剧烈,勿需加热,1—2分钟即能完全分     

ATR-FTIR Investigation of Hydrogen-terminated Si(111) Surface in Various NH4F-Based Solutions

Wet chemical cleaning of silicon is a critical step in the semiconductor manufacturing. Particles, contaminants, metallic impurities, roughness and native oxide on silicon surface after wet chemical cleaning deteriorate the reliability of transistor performance in integrated circuits^[1]. Wet chemical etching of Si(111) and Si(100) in fluoride and alkaline solutions has been extensively studied in the past few years by using scanning tunneling microscopy (STM) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR)^[2-11]. In the present work, we extend our study to Si(111) surface after treating with NH₄F/HCl mixtures. STM, X-ray photo spectroscopy (XPS), and ATR-FTIR are used to determine surface roughness, contamination and bond information on Si(111) surface after wet chemical cleaning with various NH₄F/HCl mixtures. The results are discussed in details by comparison to those treated with RCA and HF solutions, indicating that ultra-clean and flat Si(111) surface is obtained by treatment with NH₄F/HCl mixture.     

亚硫酸根离子在硅和二氧化硅的湿法腐蚀中的作用

运用光刻技术和原子力显微技术(AFM)研究了亚硫酸根离子对硅和二氧化硅在40％(w)氟化铵水溶液中腐蚀速率的影响.结果表明硅和二氧化硅的腐蚀速率和亚硫酸根离子浓度有关.高分辨X射线光电子能谱(XPS)分析在有/没有亚硫酸根的溶液中腐蚀后的硅和二氧化硅表面氟元素的结果表明在这两种溶液中腐蚀得到的表面化学成分是有差别的.实验结果证明亚硫酸根离子在硅和二氧化硅的湿腐蚀中不只是表现为一种除氧剂，还干预了表面腐蚀反应过程.     

火焰原子吸收光谱法测定铜冶炼渣中镍

通过对铜冶炼渣化学组成和性质的研究,确定了测定镍的实验方法。铜冶炼渣中二氧化硅含量在20%~40%,硫含量10%~20%,样品的分解具有一定的难度,必然影响镍的测定结果,因此需在样品分解过程中加入一定量的氟化氢铵、溴使二氧化硅生成四氟化硅、硫生成硫化氢挥发除去,溶液中其余共存元素主要有铜、银、铁、锌等元素不干扰测定结果,在硝酸(5%)介质中,用火焰原子吸收光谱法测定镍的含量,测定范围为0.01%~1%,加标回收率在99.5%~100.4%,测定结果的相对标准偏差(n=7)在0.61%~1.18%,检出限为0.004μg/mL,方法快速,简捷,能够满足日常生产检测需要。     

Synthesis of monodisperse high-aspect-ratio colloidal silicon and silica rods

We describe the synthesis and the physical properties of suspensions of colloidal silicon and silica rodlike particles. In addition to pure silicon and pure silica rods, we have also synthesized silicon rods with a silica shell and silica rods with a fluorescent silica layer. Pre-patterned p-type (100) silicon wafers were electrochemically etched in electrolyte solutions containing hydrogen fluoride. By the current density being varied while etching, macropores were etched with controllable modulated pore diameters. These silicon structures were transformed into rods with indentations 5.5 mum apart and with lengths up to 100 mum using iterative oxidation in air and dissolution of the silica by HF. Complete oxidation of these rods was also achieved. Sonication of the modulated rods resulted in monodisperse particles of 5.5 mum length and 300 nm width. A high yield of 10(12) particles, or more, is possible with this method. At high concentrations, these particles show nematic ordering in charge-stabilized suspensions. The oxidized silica outer layer of the silicon rods makes the further growth of silica in solution or on a wafer possible. This allows for control of the particles' interaction potential. Labeling with a fluorescent dye and index matching of the complete silica rods enable the study of concentrated dispersions quantitatively, on a single particle level, with confocal microscopy. Because of their high refractive index in the near-IR, the nematic phases of rods with a silica core are also interesting for photonic applications.     

Evolution of Etching Kinetics and Directional Transition of Nanowires Formed on Pyramidal Microtextures

Two‐scale roughened silicon (Si) textures are considered promising architectures for versatile applications because of their excellent self‐cleaning, light‐trapping, and biosensing capacities. In this study, we explore the directional control of nanowires formed on pyramidal microtextures through a single‐step metal‐assisted chemical etching (MACE). The measured current density of Si dissolution at catalytic etching enables quantitative monitoring of the etching kinetics of nanowire formation. The preferential orientation of fabricated nanowires on {111}‐plane pyramidal textures was found to positively correlate with the molar ratio of [AgNO₃] to ([AgNO₃]+[HF]), referred to as ρ. A distinct transition from <100> to <111> axial directions at ρ≥0.2 and ρ=0.07, respectively, was revealed. The <111>‐oriented nanowires on the pyramidal microtextures exhibited an excellent antireflection performance, with a reflectivity as low as 1.2 % at 600 nm. The results of this study may aid the design for the development of high‐performance Si‐based optoelectronic devices.     

Groove-spanning behavior of lipid membranes on microfabricated silicon substrates

We report on a spreading behavior of phospholipid membranes that arise from a lump of phospholipid (a lipid source) on topographically patterned substrates immersed in an aqueous solution. Microgrooves with well-defined shapes were prepared on Si111 surfaces by anisotropic etching in an alkaline solution. A spreading front that consists of membrane lobes and a single lipid bilayer was observed on the patterned silicon substrates by utilizing fluorescence interference contrast (FLIC) microscopy. FLIC images indicate that the membrane lobes span the microgrooves, while the underlying single lipid bilayer spread along the surface of the microgrooves. In fact, fluorescent polystyrene nanoparticles could be encapsulated in the microgrooves that were completely covered with the membrane lobes. The groove-spanning behavior of membrane lobes is discussed in terms of a balance between adhesion and bending energies of lipid bilayers.     

High-speed in situ surface X-ray diffraction studies of the electrochemical dissolution of Au(001)

We present in situ X-ray surface diffraction studies of interface processes with data acquisition rates in the millisecond regime, using the electrochemical dissolution of Au(001) in Cl-containing solution as an example. This progress in time resolution permits monitoring of atomic-scale growth and etching processes at solid-liquid interfaces at technologically relevant rates. Au etching was found to proceed via a layer-by-layer mechanism in the entire active dissolution regime up to rates of ～20 ML/s. Furthermore, we demonstrate that information on the lateral surface morphology and in-plane lattice strain during the electrochemical process can be obtained.     

Dissolution of copper oxide by the ethanolamine and ammonium fluoride in aqueous solution

Dissolution properties of copper oxide in aqueous solutions containing ethanolamine and/or ammonium fluoride have been evaluated at various pH ranges. The dissolution rate was strongly affected by the pH of the solution. The solution of ammonium fluoride showed good properties for the dissolution of copper oxide in the range of acidic conditions, whereas the solution containing ethanolamine showed a dissolution property within the basic condition. A mixture solution of ethanolamine and ammonium fluoride displayed enhanced dissolution property of copper oxide at acidic and basic conditions only. An expected synergy effect on the dissolution rate and selectivity could not be produced through a mixture of ethanolamine and ammonium fluoride in an aqueous solution. Copyright © 2011 John Wiley & Sons, Ltd.     

Iron adsorption on SiO2/Si(111)

The adsorption of ferric and ferrous iron onto the native oxide of the SiO₂/Si(111) surface has been evaluated using X‐ray photoelectron spectroscopy (XPS). Through a series of immersion experiments, performed at room temperature and pH 1, it has been shown that the ferric species is strongly adsorbed onto the hydrophilic surface, while ferrous iron remains in solution. Dehydroxylation of the silica surface by etching with hydrofluoric acid reduces the concentration of receptive Si‐OH groups, thereby limiting iron adsorption. The experiments were reproduced in a combined ultrahigh vacuum‐electrochemical system (UHV‐EC), which allowed a carbon‐free surface to be prepared before contacting the iron solutions, and confirmed the strong affinity of ferric iron towards the SiO₂/Si(111) surface. Copyright © 2007 John Wiley & Sons, Ltd.     

Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays

Photoluminescent, porous silicon pixel arrays were fabricated via a Pt-promoted wet etching of p-type Si(100) using a 1:1:1 EtOH/HF/H2O2 solution. The pixels were fabricated with micrometer-scale design rules on a silicon substrate that had been modified with an octadecyltrichlorosilane (OTS) monolayer patterned using microcontact printing. The printed OTS layer serves as an orthogonal resist template for the deposition of a Pt(0) complex, which preferentially deposits metal species in areas not covered with OTS. The Pt centers generate a localized oxidative dissolution process that pits the Si in the Pt-coated regions, resulting in the formation of a porous silicon microstructure that luminesces around 580 nm upon illumination with a UV source. Scanning electron microscopy and fluorescence microscopy images of the fabricated porous silicon structures showed that features in the size range of approximately 10-150 microm, and possibly smaller, can be generated by this catalytically amplified soft lithographic patterning method. Importantly, the OTS acts as an etch mask, so that, even with significant hole transport, etching is confined to areas coated with the Pt(0) complex.