用于直流回复退磁的脉冲装置电容电压选择研究

脉冲装置用于直流回复退磁时其电容电压值不易把握.利用试验法得到使铁磁体剩磁方向翻转的临界电压为最佳退磁电压,通过计算反向峰值磁场和脉冲电路参数得到电容电压公式,结合公式与实验规律能够快速获得退磁需要的电容电压.     

利用电荷-电压李萨如图形法测量介质阻挡放电参量

采用电荷-电压李萨如图形法，设计了大气压介质阻挡放电参量测量实验装置.利用Matlab GUI编写了计算软件，可实现实验数据的快速处理.利用该装置测量了电源频率为4.5～9.0 kHz时介质等效电容、气隙等效电容和放电功率等参量，测量结果表明：电源频率为5.75 kHz时，介质等效电容最高；电源频率为5.5 kHz时，气隙等效电容最低；电源频率为5.0 kHz时，放电功率最高.     

基于silvaco-TCAD的In0.53Ga0.47As/InP红外探测器的仿真

采用silvaco-TCAD研究In0.53Ga0.47As/InP SAGCM-APD光电探测器,对探测器的结构参数对器件的电场分布、击穿电压和贯穿电压的影响进行仿真分析。研究表明电荷层对器件内部电场起到更好的调节作用,但过高的电荷层面密度会导致APD探测器的击穿电压与贯穿电压之差减小。倍增层厚度的增加使击穿电压先减小后增高,贯穿电压线性增加,同时耗尽层宽度变大,使器件电容减小。当倍增区厚度1 μm、偏压为-5 V时,器件电容密度达到了4.5×10-17 F/μm。反向偏置电压为30 V时,APD探测器在1.31 μm和1.55 μm波长下的响应度分别达到1 A/W和1.1 A/W     

便携式谐振倍压电容充电电源的设计

对输入电压为24 V,输出电压3 kV的便携式谐振倍压电容充电电源进行了设计与验证。针对高变压比的特点,电源采用串联谐振拓扑与倍压整流相结合的拓扑结构,避免了高频变压器副边匝数过多、分布参数过大可能造成的不利影响。对高频变压器、谐振电容、开关器件等核心元件进行了设计和调试。最后采用该电源进行电容充电实验,其测试结果验证了设计的正确性。     

非简谐振动对石墨烯量子电容和热稳定性的影响

采用固体物理理论和方法,研究了单层石墨烯的量子电容和它的温度稳定性随温度和电压的变化规律,探讨原子非简谐振动对它的影响.结果表明:(1)当电压一定时,单层石墨烯的量子电容和温度稳定性系数均随温度升高发生非线性变化,电压小于2.3 V时,量子电容随温度升高而增大,温度稳定性系数随温度升高由缓慢变化到很快增大,电压高于2.3 V时,量子电容随温度升高先增大后减小,而其温度稳定性系数随温度升高由缓慢变化到很快减小.温度一定时,量子电容只在电压值为0.4～2.8 V范围内才变化较小,而电压值大于2.8 V时,量子电容迅速减小并趋于0;(2)与简谐近似相比,非简谐项会使石墨烯量子电容有所增大,且温度愈高,两者的差愈大,非简谐效应愈显著,温度为300 K时,非简谐的量子电容要比简谐近似的值大0.33%,而温度为1 000 K时,差值增大到1.47%;(3)电压在1.5～1.8 V之间,而温度低于800 K时,石墨烯量子电容的温度稳定性系数最小且不随温度而变,储能性能的温度稳定性最好;(4)非简谐项会使它的量子电容热稳定性系数比简谐近似的值增大,且增大的情况与温度有关,当温度为400 K时量子电容热...     

紧凑的非链式脉冲HF激光器

研究了气体组分和峰化电容对紫外光预电离脉冲HF激光器性能的影响.实验发现最佳气体混合比为SF₆/C₂H₆=20:1,峰化电容和主放电电容的最佳比为C_p/C_s=0.3,在最佳气体混合比时,最大激光脉冲峰值功率和对应的总气压随充电电压的提高而增大.同时得到了E/P值和激光能量的关系.整个器件的最大激光输出为400mJ,脉冲峰值功率为1.5MW,最大电光转换效率约为2.2%.     

充氩弗兰克-赫兹实验研究

为了研究氩原子的激发电位,对充氩弗兰克-赫兹管在不同的灯丝电压、栅极电压和加速电压下进行了实验,分析了获得的实验曲线;得到使用该弗兰克-赫兹管实验时的最佳参数为灯丝电压3.2 V、栅极电压1.0 V、拒斥电压10.0 V.在该参数下测得氩原子的激发电位为11.61 V,并进行了详细的讨论;表明该值本质上应为氩原子第一亚稳态的激发电位,或两个亚稳态激发电位的一定概率比.     

肖特基结的制备与势垒测量

采用磁控溅射方法在Nb07％-SrTiO3基片上制作Au薄膜接触,并在氧气气氛下750℃退火30 min,在室温环境下测量电流电压和电容电压等特性曲线,观测整流特性,根据相应实验数据采用饱和电流法、电容C-2与反偏电压V成线性关系计算肖特基势垒的大小.     

用激光点火辅助火花诱导击穿光谱技术实现铝合金的高灵敏元素分析

报道了采用激光点火辅助火花诱导击穿光谱技术分析铝合金中痕量元素时的分析行为。用低能量激光脉冲聚焦于样品表面并在放电电极之间产生等离子体来触发高压火花放电以改善火花诱导击穿光谱技术的分析行为。在当前空间几何配置下,研究得到了最佳的放电电压和储能电容等参数并在最佳实验条件下分析了样品中的铜元素,其检出限达到0.7 ppm。激光点火的辅助手段改善了火花诱导击穿光谱技术在元素分析时信号的稳定性、提高了分析精度。同时它还能够有效地降低放电电压,改善其空间分辨本领。研究表明激光点火辅助火花诱导击穿光谱技术具有灵敏度高、稳定性好以及具有较好的空间分辨本领的特点,非常适合于各种合金中的痕量元素分析。     

阳加速器水传输线D-dot的设计、标定和实验

 应用D-dot探测器进行了阳加速器水传输线电压测量,利用探头与高压电极之间的结构电容获得脉冲电压的微分信号,通过RC积分取得电压信号。利用Pspice软件的瞬态分析功能模拟结合实验结果估算了探测器的杂散参数,进行了幅频响应特性分析;运用频响分析解释了测试结果。在加速器低电压短路实验状态下,用电阻分压器对其进行了在线标定。测量结果表明D-dot探测器获取了正确的电压波形,且工作稳定可靠。     

150 kV全固态高压脉冲发生器设计

设计了一种基于全固态MOSFET半导体开关器件的Marx脉冲发生器。充电回路用快恢复二极管代替充电电阻,减小了充电部分功率损耗;将主电路和驱动电路集成在一起,采用自取电模式给驱动电路供电;由光纤传输驱动信号,抑制了放电回路对触发信号的干扰;采用顺/逆时针方向环形分布的紧凑型拓扑结构,不仅减小了回路电感,而且实现了脉冲发生器的小型化与模块化。所设计的Marx发生器充电部分仅需提供900 V低压,用180级单元串联,获得最高幅值为150 kV、脉宽1~5 s可调的高压快脉冲,前沿控制在500 ns以内。利用该脉冲发生器在50 k电阻和5 pF电容并联的等效负载上进行了一系列实验;比较分析了脉冲发生器工作过程中影响脉冲上升沿的几个主要因素,包括回路电感、MOSFET驱动电压及主回路分布电容等,并讨论了提升脉冲前沿的技术措施。     

强脉冲X射线辐照Si-SiO2界面对C-V 和I-V特性曲线的影响

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了C-V曲线和I-V曲线。实验发现，经过强脉冲X射线对Si-SiO₂界面进行的辐照，使C-V曲线产生了正向漂移，这一点与低剂量率辐射结果不同；辐射后，感生I-V曲线产生畸变；特别地，从I-V曲线上还反映出强脉冲X射线辐照的总剂量效应造成电特性 参数明显退化，最后甚至失效。讨论了强脉冲X射线辐照对Si-SiO₂界面产生损伤的机理，并对实验结果进行了解释。     

On Optimization of a Power-Supply System of a Magneto-Plasma Compressor

The operation of a miniature magneto-plasma compressor with low-voltage power-supply system was studied experimentally and the current and voltage drop under discharge were measured. It was found that the voltage drop remains practically constant during discharge and amounts to a few tens of volts. The performed electrotechnical analysis made it possible to determine the efficiency of the power-supply system depending on the initial voltage of the energy storage, the discharge burning voltage and the discharge circuit parameters (capacitance, inductance, and resistance).     

Synthesis and characterization of DSSC by using Pt nano-counter electrode: photosensor applications

Pt electrode prepared by chemical method has been employed as counter electrode in dye-sensitized solar cell. TiO₂ nanomaterial was deposited on fluorine-doped tin oxide substrate to be used as photoanode. Structure of the TiO₂ and Pt films was investigated by atomic force microscope. The effect of illumination intensity on the photovoltaic parameters such as open circuit voltage, short circuit current density, output power, fill factor and efficiency of these cells was investigated in the range 2.5–130 mW/cm^?2. The cell efficiency is stable above 70 mW/cm². The fill factor is almost constant all over the studied range of illumination intensity. Impedance spectroscopy of the studied device as the summary measurements of the capacitance–voltage, conductance–voltage and series resistance–voltage characteristics were investigated in a wide range of frequencies (5 kHz–1 MHz). At low frequencies, the capacitance has positive values with peak around the origin due to the interfaces. At 200 and 300 kHz, the capacitance is inverted to negative with further increasing of the positive biasing voltage. Above 400 kHz, C–V profile shows complete negative behavior. Also, the impedance–voltage and phase–voltage characteristics were investigated. This cell shows a new promising device for photosensor applications due to high sensitivity in low and high illuminations.     

Quantum capacitance: A microscopic derivation

We start from microscopic approach to many body physics and show the analytical steps and approximations required to arrive at the concept of quantum capacitance. These approximations are valid only in the semi-classical limit and the quantum capacitance in that case is determined by Lindhard function. The effective capacitance is the geometrical capacitance and the quantum capacitance in series, and this too is established starting from a microscopic theory.     

Implanted silicon varactor for TV tuner

Ion implanted silicon planar varactor diodes of large capacitance variation ratio have been developed for UHF/VHF TV tuner circuits. The ratio of the capacitance variation achieved at 3 V to 25 V is between 6 and 7 with devices exhibiting low leakage and a required breakdown voltage of 30 V. Ion implantation has been used to introduce phosphorus into n-type silicon in the predeposition cycle. The device fabrication is completed using conventional diffusion techniques which also include thermal annealing. The fabrication process involves a minimum number of processing steps to produce low-cost devices. These diodes were used in a VHF TV tuner to obtain gain between 18 and 32 db in different bands, indicating high values of the quality factor of the varactors.     

基于SOI工艺的扭转式微机械扫描光栅设计及制作

为实现微型光谱仪在工程领域的广泛应用,研究了其核心器件扭转式微机械扫描光栅的结构与制作方法。利用SOI工艺,设计一种无需启动电极的静电梳齿驱动结构,可以使扭转式微机械扫描光栅具有低频驱动、制作工艺简单、扫描范围广等优点。通过设计的制作工艺方法,研制出了能够初步满足性能要求的扭转式微机械扫描光栅样件。测试结果表明:该微扫描光栅在驱动电压为25 V时最大转角可达到4.8,对应的光学扫描角为19.2。     

On the Role of Capacitance Determination Accuracy for the Electrical Characterization of Pulsed Driven Dielectric Barrier Discharges

A dielectric barrier discharge (DBD) of coaxial geometry has been investigated. The discharge cell was filled by 100 mbar of argon and driven by positive square voltage pulses with a rise time of 20 ns and 75 ns. The internal discharge characteristics such as the discharge current, the gas gap voltage, the instantaneous power and energy have been determined from measured current and voltage waveforms. The peculiarities of the experimental evaluation of the discharge parameters are discussed in detail. Special attention is paid to the accurate experimental determination of the key capacitance values of the DBD, namely the capacitance of the reactor cell C_cell and the capacitance of the dielectric barriers C_d. The influence of the capacitance value accuracy on precision of electrical characterization is demonstrated and it is shown that a small uncertainty in the C_d value leads to large errors in the evaluation of the gas gap voltage. Nevertheless, the obtained accuracy of the capacitance values allows the reliable comparison of the electrical DBD parameters. These are sensitive to the mode of discharge excitation. The shortening of the voltage rise time leads to the increase of the total and instantaneous energy as well as the peak power dissipated into the discharge. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical parameters of Schottky contacts in CaCu3Ti4O12 thin film capacitors

CaCu₃T_i4O₁₂ (CCTO) thin films were grown by pulsed laser deposition on Pt and La_0.9Sr_1.1NiO₄ (LSNO) bottom electrodes. The electrical characteristics of the CCTO/Pt and CCTO/LSNO Schottky junctions have been analyzed by impedance spectroscopy, capacitance–voltage (C–V) and current–voltage (I–V) measurements as a function of frequency (40 Hz–1 MHz) and temperature (300–475 K). Similar results were obtained for the two Schottky diodes. The conduction mechanism through the Schottky junctions was described using a thermionic emission model and the electrical parameters were determined. The strong deviation from the ideal I–V characteristics and the increase in capacitance at low frequency for ?0.5 V bias are in agreement with the presence of traps near the interfaces. Results point toward the important effect of defects generated at the interface by deposition of CCTO.