Temporal dissipative structures in cyclically deformed metallic alloys

cyclically deformed metallic alloys. The model employs quasi-chemical reactions of multiplication, annihilation and positive feedback among the populations of mobile, immobile, and Cottrell-type dislocations [1]. Three major types of loading have been simulated, namely, pure sinusoidal, “creep fatigue”, and ramp loading. Computer movies of the temporal evolution of stress serrations and dislocation densities have been produced as an aide for analysis and illustration. It has been demonstrated that the model successfully reproduces strain bursts and stress serrations in fatigued metallic alloys in terms of the underlying dislocations mechanisms, thus establishing the fundamental connection between micro- and macromechanics of cyclic deformation. Received: 20 June 1996/Accepted: 6 October 1996     

On the derivation and analysis of the “machine equation” in finite deformations

Received: 23 June 1998/Accepted: 15 July 1998     

TEM investigation of the interaction between dislocation and nitride precipitates in deformed high manganese-chromium austenitic steels

The interaction between dislocations and nitride precipitates during high-temperature creep deformation of high manganese austenitic steels has been investigated by transmission electron microscopy. Most of the dislocations activated by applied stress were dissociated into Shockley partials. The fine TiN precipitates are pinning and/or incorporating the bow-type moving dislocations and they turned out to be more effective than the coarser TaN in disturbing the dislocation movement.     

Multilayer model of interlayer spacing in graphite intercalation compounds

The elastic deformation of host layers is calculated by constructing a model where the host layers, regarded as continuous two-dimensional elastic sheets, are infinitely stacked and compressible intercalants, represented by harmonic springs, are intercalated into them. If we treat the intercalants as being rigid relative to the soft host layers in the stage-1 graphite intercalation compound, Li_xC₆ (0≤x≤1), the calculated average gallery spacing agrees well with the experiments, without using any adjustable parameter. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 23 August 2000     

Elastic theory of icosahedral quasicrystals - application to straight dislocations

In quasicrystals, there are not only conventional, but also phason displacement fields and associated Burgers vectors. We have calculated approximate solutions for the elastic fields induced by two-, three- and fivefold straight screw- and edge-dislocations in infinite icosahedral quasicrystals by means of a generalized perturbation method. Starting from the solution for elastic isotropy in phonon and phason spaces, corrections of higher order reflect the two-, three- and fivefold symmetry of the elastic fields surrounding screw dislocations. The fields of special edge dislocations display characteristic symmetries also, which can be seen from the contributions of all orders. Received 21 February 2001 and Received in final form 27 June 2001     

Molecular dynamics simulations of the interaction between 60° dislocation and self-interstitial cluster in silicon

Molecular dynamics simulations are performed to investigate the interaction between 60° shuffle dislocation and tetrainterstitial (I₄) cluster in silicon, using Stillinger-Weber (SW) potential to calculate the interatomic forces. Based on Parrinello-Rahman method, shear stress is exerted on the model to move the dislocation. Simulation results show that the I₄ cluster can bend the dislocation line and delay the dislocation movement. During the course of intersection the dislocation line sections relatively far away from the I₄ cluster accelerate first, and then decelerate. The critical shear stress unpinning the 60° dislocation from the I₄ cluster decreases as the temperature increases in the models.     

Special interaction between quasiperiodic grain boundaries and lattice dislocations in crystalline solids

A theoretical model is suggested which describes phason imperfections (specific excitations) in a quasiperiodic grain boundary in a polycrystalline solid as dilatation flexes. In the framework of the model, an elastic stress field of the quasiperiodic grain boundary is calculated as a stress field created by an ensemble of dilatation flexes (phason imperfections) located in the boundary. It is shown that there is a special elastic interaction between crystal lattice defects and quasiperiodic grain boundaries comprising phason imperfections. The strengthening effect in plastically deformed polycrystalline solids is quantitatively described which is related to the special elastic interaction between lattice dislocations and quasiperiodic grain boundaries. Received: 29 October 1996 / Revised: 22 August 1997 / Accepted: 13 November 1997     

The microstructure of local strain nuclei observed for Zr alloy in the stage of parabolic work hardening

The dislocation structure of the deforming Zr+1% Nb alloy in the stage of parabolic work hardening was examined by the technique of transmission electron microscopy (TEM). The faulted structure of the material is found to vary both qualitatively and quantitatively in the regions corresponding with the zones of local strain maxima and minima. The data on the density of different types of defect in the above zones have been analyzed. Received: 19 December 2000 / Accepted: 20 December 2000 / Published online: 23 March 2001     

Stochastic effects on dislocation structure development under cascade-damage irradiation

Received: 28 January 1998/Accepted: 24 March 1998     

Dislocation emission from an elliptically blunted crack tip with surface effects

The explicit expressions for critical stress intensity factors are derived for edge dislocation emission from an elliptically blunt crack with surface effects under mode I and mode II loadings. The influence of surface effects on dislocation emission criterion is analyzed. The result indicates the impact of the surface stress becomes remarkable for nanoscale blunted cracks and some particular materials, which cannot only affect the value of the critical stress intensity factors for dislocation emission, but also alter the emission angle.     

Evolution of dislocations in perylene films with thickness and deposition rate

The growth of perylene films on an amorphous oxide bottom layer is investigated. The perylene films show clear spiral growth and formation of screw dislocations. As a function of deposition rate and film thickness the densities of screw dislocations, grains as well as the roughness and the lateral correlation length are determined from AFM images. The evolution of microstrain as calculated from an XRD peak profile analysis corresponds to the dislocation density. The simultaneous decrease of grain density and dislocation density with film thickness is explained by considering the overgrowth of grains due to loss of dislocations acting as growth spirals. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

     

Molecular beam epitaxy of GaN on a substrate of MoS2 layered compound

The feasibility of MoS₂ layered compound as a substrate for GaN growth was investigated. GaN films were successfully grown on MoS₂ by plasma-enhanced molecular beam epitaxy and the crystal quality of GaN on MoS₂ was compared with that on Al₂O₃. For GaN grown on MoS₂ substrate, it was found that the surface flatness observed by atomic force microscopy, stress in the film measured by Raman spectroscopy, optical properties measured by photoluminescence spectroscopy, and threading dislocation density observed by transmission electron microscopy show superior properties compared with that grown on Al₂O₃. These results suggest the layered compound such as MoS₂, which has no dangling bonds on the surface and has lattice mismatching of 0.9% to GaN, has high potential for a substrate of GaN growth. Received: 1 March 1999 / Accepted: 8 March 1999 / Published online: 26 May 1999     

Strain relaxation at cleaved surfaces studied by atomic force microscopy

Atomic force microscopy (AFM) in air is used to study the (110) cleaved surface of strained (100) In_xGa_1-xAs/ InP heterostructures for different compositions and thicknesses of the ternary compound layers. We find that the elastic strain relaxation induces a surface undulation of a few ? amplitude, even for very small misfits, provided the layers are thick enough. Using finite-element calculations of the strain relaxation near the cleaved edge, we reproduce quantitatively the AFM observations for compressive- as well as for tensile-strained layers with an accuracy better than 0.1 nm. This demonstrates the ability of AFM to quantify strain distributions by making use of surface profile measurements. Received: 9 November 1998 / Accepted: 11 March 1999 / Published online: 7 July 1999     

On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

14 cm^-3 in FZ-Si was obtained. Received: 2 June 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999     

A mobile positron-lifetime spectrometer for field applications based on β+-γ coincidence

+ -γ coincidence measurement, which has been applied to in-situ examinations of microstructural evolution processes during the fatigue of copper single crystals, is described. Since no sandwich-type geometry is required, it is applicable to all specimen geometries commonly used in materials testing and to the non-destructive testing of engineering parts in service. As a radioactive source ⁷²Se generates the positron-emitting ⁷²As, which provides two positron spectra with maximum energies of 2.5 MeV and 3.3 MeV and a prompt γ quantum of 835 keV. The positrons emitted in the direction towards the specimen pass through a fast plastic scintillator and produce a scintillation signal, thereby losing about 150 keV of their energy. This signal serves as a start signal for the positron-lifetime measurement and is measured in coincidence with the subsequent 511 keV annihilation quantum. After passage through the plastic scintillator the remaining positron energy is still high enough to penetrate deep into the material and to allow for real bulk examinations. The prompt γ quantum may serve as an on-line control of the stability of the electronic system which will be useful under non-constant service conditions in a proposed field application. Received: 8 January 1997/Accepted: 14 March 1997     

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

54 , 2512 (1996)]. The trapping coefficient of single-negative silicon vacancies was also derived. Received: 25 August 1997/Accepted: 27 March 1998     

Intrinsic weak link originating from tilt in contacts between dx2-y2 wave superconductors

x²-y² wave superconductors, which form a contact at a tilt angle. The contact is a weak link or a Josephson junction, with properties determined by the misalignment angle. Complementing existing theories that discuss the influence of d_x2-y2 symmetry on the charge transfer across junctions, the ideas presented provide insights into the origin of the junction formed in such configurations. The mechanism discussed is of relevance for the understanding of the electronic properties of grain boundaries in superconductors, including the angular dependence of the critical current density. Received: 5 July 1996/Accepted: 7 January 1997     

X-ray diffraction imaging investigation of silicon carbide on insulator structures

A new process was recently developed to manufacture silicon carbide on insulator structures (SiCOI). The process consists of several steps: (i) hydrogen implantation into an oxidised SiC wafer, (ii) bonding the oxidised surface of this wafer to an oxidised silicon substrate and (iii) high temperature splitting of a thin SiC film from the SiC wafer at the depth of the maximum hydrogen concentration and further annealing of the splitted film. The defect generation occurring during this process was investigated by synchrotron radiation X-ray diffraction topography, with special emphasis on to the last two steps. Various X-ray topographic techniques were used to characterise the lattice defects inside the SiC wafer, to quantify the strong lattice distortion near the edges of the splitted SiC film and to reveal SiC film regions lost during the splitting process. Moreover, we show that the strain fields of dislocations, observed in the silicon substrate after high temperature splitting and annealing of the splitted structure, induce a corresponding deformation in the thin SiC overlayer, despite the presence of the sandwiched oxide film. The defect density is much lower in the central region of the SiCOI structure. Received: 29 June 2001 / Accepted: 8 November 2001 / Published online: 20 March 2002     

Surface acoustic waves in interaction with a dislocation

A surface acoustic wave can interact with dislocations that are close to the surface. We characterize this interaction and its manifestations as scattered surface acoustic waves for different orientations with respect to the surface of an edge dislocation. For dislocations that are parallel or perpendicular to the free surface, we present an analytical result for short dislocations with respect to the wave-length that reproduce qualitatively the main features observed for dislocations of various sizes.     

Structure and topography modifications of austenitic steel surfaces after friction in sliding contact

Friction experiments between two austenitic stainless steel (AISI 304L) surfaces in sliding contact were carried out under very low loads in two liquid environments, namely demineralized water and methanol, in order to study the correlation between surface damage (wear and surface topography) and structural modifications (phase formation and microstructure). The particularity of our approach was to perform the tests under Hertzian pressures, which were several orders of magnitude lower than the elastic limit of stainless steel. The structural modifications produced during friction were analysed by X-ray diffraction and transmission electron microscopy and the surface topography was studied by scanning electron microscopy and three-dimensional (3D) profiling. Whatever the experimental conditions investigated, the morphology of the damage observed on both surfaces consisted of very fine, smooth and parallel grooves typical of an abrasive wear process of a ductile material caused by the ploughing action of hard particles. From the beginning of the tests, the transformation of austenite into martensite was observed in the superficial layers and the dominant presence of martensite was identified in the wear debris. These results suggest that, under our experimental conditions, abrasion is the dominant mechanism of material removal. Received: 12 March 2002 / Accepted: 3 May 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +33-5/4949-6692, E-mail: jean.paul.riviere@univ-poitiers.fr