Comparison of intrinsic zero-energy loss and Shirley-type background corrected profiles of XPS spectra for quantitative surface analysis: Study of Cr, Mn and Fe oxides

The intrinsic zero-energy loss profiles of transition metal 2p and 3p XPS spectra for Cr, Mn, and Fe oxides are obtained by spectral deconvolution and compared with Shirley-type background corrected profiles. The metal core level spectra are deconvoluted by O 1s spectra as the response function of each oxide. As the O 1s spectra include intrinsic and extrinsic energy loss parts, the background corrected core level spectra are zero-energy loss spectra. The good agreement of the deconvoluted spectra with the reported spectra obtained by the many body effect theory indicates that the background subtraction method is accurate. A comparison of the deconvoluted with the background corrected spectra of the Shirely-type subtraction reveals that almost all the spectra coincide with each other except for Fe 3p with -Fe₂O₃. The good coincidence of the Shirley-type corrected spectra with the deconvoluted and calculated spectra indicates that Shirley-type background correction can be used for daily quantitative surface analysis.     

Influence of vacancies on the electronic structure of Co ZrSn Heusler alloys

The electronic structure of the Co_2-xZrSn Heusler alloys has been studied by X-ray photoelectron spectroscopy (XPS). XPS valence band spectra can be compared with ab initio electronic structure calculations using the linearized muffin-tin orbital (LMTO) method. The calculated magnetic moments per Co atom agree well with the moments obtained from experiment. The LMTO calculations also show the energy shifts of the Co, Zr and Sn valence electron states towards the Fermi level when the concentration of vacancies increases in these alloys. Received 9 March 1999 and Received in final form 6 May 1999     

Investigation of impurity phase formation for (ZnO)1−x(TMO)x bulk samples formed by ball milling

Structural, compositional, optical and magnetic properties have been studied for polycrystalline (ZnO)_0.90(TMO)_0.10 bulk samples, where TM (transition metal ions) = Mn, Fe, and Co. The quantitative Rietveld analysis showed relatively higher percentage of impurity (spinel and oxide) phases of about 33.76, 52.38 and 55.61% for Mn, Fe and Co doped ZnO samples, respectively. The de-convolution of XPS spectra indicated the presence of different phases. The appearance of shaking satellites in XPS spectra confirmed the presence of different valence states of dopant ions. The red shift in energy band gap, estimated from reflectance UV-vis spectroscopy, was observed for all TM doped bulk samples. For Mn doping, paramagnetic behavior was obtained while for Co and Fe, weak ferromagnetic behavior was observed at room temperature.     

Electronic structure of PdO studied by photoemission (XPS,UPS)

In this paper we present the results of photoemission studies (XPS and UPS) performed on a polycrystalline surface of PdO. The electron density of states (EDOS) deduced both from XPS and UPS (He_I and He_II) are very similar. The valence band of PdO, which differs significantly from the Pd one, can be built up by four structures located at 0.5 eV, 2.2eV, 4.5 eV and 6.5 eV below E_F. The various electronic contributions (p or d) in the band are considered and, in order to explain our spectra, we discuss several hypothesis taking into account the possible existence of satellite lines or crystal field effects. Our XPS and UPS spectra show that the energy bands of PdO are narrow (～ 2–3 eV), moreover the energy shift of the core levels (|ΔE^F_B| = 2 eV) is important : these results suggest that the correlations between the d electrons may be important in PdO.     

Electronic structure of CdTe probed by Cd and Te M4,5 X-ray emission spectra

We have investigated the bulk electronic structure of CdTe focusing on the Cd 5p and Te 5p valence states by X-ray emission spectroscopy (XES). Despite the very low fluorescence yields the Cd and Te M_4,5 (5p → 3d_3/2,5/2) spectra have been recorded successfully. A good correspondence has been found between the valence band XES and X-ray photoelectron spectra (XPS) by comparison on a common binding energy scale. We also performed a density functional theory calculation of the CdTe valence band, obtaining the Cd 4d, 5s, 5p and Te 5s, 5p local partial densities of states. The experimental Cd 5p and Te 5p derived from the X-ray emission spectra are in good agreement with the calculation. The intensity ratio of the Cd M_4,5 to the Te M_4,5 spectrum is obtained to be 0.25, in agreement with the ratio of the calculated Cd 5p to the Te 5p density of states in the CdTe upper valence band (0.22).     

I. XPS study of 3d-metal ions dissolved in aluminium

The core and valence band spectra of diluteAlMn,AlNi andAlCu alloys have been investigated by x-ray induced photoemission spectroscopy (XPS). The 2p levels of Mn and Cu inAlMn andAlCu change only slightly compared to their properties in the pure metals, whereas those of Ni inAlNi lose both their asymmetry and the two hole satellite. The 3s spectra of Mn inAlMn show a splitting of 2.9 eV, as compared to 4.3 eV in Mn metal. This indicates that inAlMn the Mn ion is magnetic, at least in the time scale of the XPS measurement. The valence band spectra of the alloys (and ofAlFe andAlCo) show virtual bound states with a width of about 1.5 eV and a distance relative to the Fermi energy which increases with increasingd-occupancy. The energy of the Al plasmons increase with increasingd-metal content.     

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

The electronic structures of titanium dioxide (TiO₂) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO₂ is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the O p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t_2g state of the dopant plays a significant role in the photoresponse of TiO₂ under visible light irradiation.     

Relation between 2p X-ray photoelectron and Kα X-ray emission spectra of manganese and iron oxides

The high resolution Mn and Fe Kα X-ray emission spectra (XES), and Mn and Fe 2p X-ray photoelectron spectra (XPS) for manganese and iron oxides were measured. The spectra were compared with those of [MnO₄]⁻, [Fe(CN)₆]⁴⁻ and [Fe(CN)₆]³⁻ ions. As the electronic structure of the latter compounds do not change with electron hole creation in the core levels, satellite peaks due to charge transfer are not observed in the 2p XPS spectra, and the peak profiles of metal 2p XPS and Kα XES are governed by the exchange splitting between 2p and valence electrons. The metal 2p XPS spectra of the oxides had satellite peaks, but the XES spectra had no satellites. FWHMs of the metal 2p_3/2 main peaks of the compounds being low spin states are smaller than those of metal Kα₁ XES spectra. However, FWHMs of Mn 2p_3/2 of the manganese oxide were nearly equal to those of Mn Kα₁ XES spectra, and those of Fe 2p_3/2 XPS spectra of the iron oxides are greater than those of Fe Kα₁ XES spectra.     

Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1)

To investigate the initial growth of Fe films on Si(0 0 1) and the Fe/Si interface, Fe films at various thicknesses have been systematically studied by soft X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). The Fe L edge XAS spectrum shows a strong thickness dependence with broader line-width for thinner films. Detailed analysis of the Fe absorption signal as a function of the thickness shows that the broad linewidth of Fe L edge XAS spectra is mostly contributed by the first Fe layer at the Fe/Si interface. In contrast to XAS, Fe 2p photoemission spectra for these films are identical. However, valence band photoemission also shows a strong thickness dependence. Comparing the valence band photoemission spectra of the thin Fe/Si(0 0 1) films with that of pure Si and the thickest Fe film, the difference spectra at all thicknesses show almost identical shape indicating the same origin: the Fe/Si interface. Thus, it is mainly the first Fe layer at Fe/Si layer that is reactive with the Si substrate changing its electronic structure.     

Resonant valence-band photoemission spectroscopy on the Fe62Ni20Cr18 alloy

The Fe62Ni20Cr18 valence band was studied by scanning the photon energy across the 2p3/2 core-level threshold of each element of the alloy. A resonant enhancement of the weak 3d-like features was observed. In pure transition metals, similar valence band resonances are explained by a radiation-less Raman de-excitation emission, which is active at threshold and degenerate with the two-hole satellite of direct photoemission. Present structures are associated to satellite features occurring in Fe62Ni20Cr18, and their intensities and binding energies are compared to those of the pure metal components. The alloy satellite resonant behaviour reveals some peculiar modifications of: a) the crossover between the radiation-less Raman scattering and the Auger emission regimes; b) the ratio of the relative intensities of the main and satellite peaks. We mainly assign these differences to the hetero-nuclear bonds in the alloy.     

X-ray photoelectron spectra of N,N-dimethylnitramine and N,N-dimethylnitrosamine and their interpretation in terms of molecular orbital calculations

The core and valence electronic energy levels of N, N-dimethylnitramine and N,N-dimethylnitrosamine have been investigated by X-ray photoelectron spectroscopy (XPS), using a Varian IEE-15 instrument. The spectra have been interpreted using several semi-empirical molecular orbital techniques, including CNDO/2, INDO, and Iterative Extended Hückel. Tentative assignments of the valence band spectra have been made. The shake-up spectra have also been investigated and interpreted on the basis of CNDO/S calculations. An XPS study of UV photolysis gave evidence of selective disruption of the NO bond in dimethylnitramine.     

X-ray photoemission of valence electrons in cuprous halides,and lead and cadmium iodides.

The XPS spectra of valence bands in CuCl, CuBr, and CuI show the existence of two separate bands after appropriate deconvolution. The evaluation of the average p-d mixing rates on the basis of the tight-binding approximation with a few simplifying assumptions indicates, in accordance with optical data, that the upper valence band arises mainly from the 3d state of copper. The XPS spectra coincide qualitatively but not quantitatively with the spectra obtained by excitation with monochromatized synchrotron radiation at 40, 61, and 76 eV. A major difference is that the ratio of integrated intensity of the upper band to that of the lower band is larger in the case of excitation at 40, 61, or 76 eV. The XPS spectra of PbI₂ and CdI₂ have also been measured. In both materials, the valence band spectra have composite structures and give two well-defined peaks after deconvolution. The profile of the spectrum of PbI₂ appears to have some deviation from the reported energy band structure.     

Growth of Fe films on Rh(001): a photoemission study

The growth mode and electronic structures of Fe thin films, epitaxially grown on Rh(001), were studied by various photoemission measurements for the film thickness of 0–12 monolayers. By comparing the valence band structures obtained from the angle-resolved photoemission spectra and the theoretical band calculations for the bulk Fe, we concluded that the valence band structure of the Fe film resembles that of fcc(001) in the low coverage region and that of bcc(110) in the high coverage region. This transformation of the electronic structure is considered to be related to the thickness dependence of the interlayer spacing of the films.     

硅酸锌的电子结构

采用局域密度泛函理论和第一性原理的方法,计算四方结构和六角结构硅酸锌的平衡晶格常数、电子态密度和能带结构。计算结果表明,四方结构硅酸锌的平衡晶格常数为0.71048nm,六角结构为1.40877nm,两者与实验值的误差均在1%左右。态密度图显示,主要电子态分布在-7.18～0.00eV和2.79～10.50eV两个能量区域;同时,不同元素电子对导带和价带有不同贡献,其中氧的p态电子对价带顶贡献最大,锌的s态电子对导带底贡献最大。能带计算表明,四方与六角结构硅酸锌均为直接带隙半导体,禁带宽度分别为2.66,2.89eV。     

Mn,Fe,Co掺杂GaAs电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的平面波超软赝势方法对本征GaAs以及3d过渡金属Mn、Fe、Co单掺杂GaAs晶体的电子结构及其光学性质进行理论计算以及对比研究.计算结果表明:能带结构中三种掺杂体系均引入新的能级,能带条数增多,导带底与价带底顶向深能级移动,带隙减小;费米能级附近出现了杂质能级,导致掺杂体系光子能量位于0时介电函数虚部便有所响应,掺杂体系相较于本征体系的静介电常数有所提升;Mn、Fe、Co三种掺杂体系相较于本征体系在红外以及远红外区域吸收系数得到了明显的提升,其中Fe掺杂GaAs的光催化特性最好.     

Investigation of Fe/Al interface as a function of annealing temperature using XPS

This article describes the systemic investigation of the interface chemical and electronic properties of ultrathin Fe/Al multilayer structure (MLS) as a function of annealing temperature. For this purpose electron beam evaporated [Fe/Al]_×15 ML samples have been prepared under ultrahigh vacuum conditions. The chemical and electronic information of the interfaces at different depth has been obtained from XPS technique.The core level study show a gradual change in the nature of the electronic bonding at the interface as a result of annealing. In particular, the MLS annealed at 200 °C and 400 °C clearly show shifts in the binding energy position of Fe-2p_3/2 core line towards higher energy and Al-2p_3/2 core line towards lower energy side as compared to as-deposited sample, suggesting the formation of FeAl alloy phase at the interface. Another important finding with annealing is that the intensity of peak corresponding to pure Al-2p increases and that of Fe-2p decreases as compared to as-deposited case. The increase in intensity of Al-2p core line suggests the migration of Al atoms towards the surface owing to annealing induced inter-diffusion. The corresponding valence band spectra show appreciable changes in the Fe-3d as well as Al-3s density of states due to strong hybridization of sp-d states at the Fermi level as a result of charge transfer and also provide strong evidence for FeAl alloy formation.     

High resolution core and valence band XPS spectra of non-conductor pyroxenes

High resolution core level and valence band (VB) X-ray photoelectron spectra (XPS) of the non-conductor pyroxene minerals, bronzite ((Mg_0.8,Fe_0.2)₂Si₂O₆) and diopside (Ca(Mg_0.8Fe_0.2)Si₂O₆) have been obtained with the Kratos magnetic confinement charge compensation which minimizes differential charge broadening. Observed Si 2p, O 1s, Mg 2p and Ca 2p total linewidths are all about 1.3 eV, very similar to those observed previously with the same instrument for SiO₂ and olivines ((Mg,Fe)₂SiO₄); and we consider that these widths are within 0.05 eV of the minimum room temperature linewidths for these samples with the experimental resolution of this instrument of 0.35 eV. These linewidths are all determined by vibrational broadening due to the M-O symmetric stretch in the ion states. The Si 2p binding energies (BE) are intermediate between the quartz and olivine Si 2p binding energies; but the O 1s spectra resolve the bridging oxygen (BO) and non-bridging oxygen (NBO) in the unit, with the NBO O 1s very close in BE to the O in olivine, and the BO very close to the BO in SiO_2. Indeed in both diopside and bronzite, it is possible to separate the three structurally inequivalent O atoms in the O 1s spectra: the BO at a BE of about 532.6 eV, a NBO peak from the MgOSi moiety (Mg in the M1 site) at about 531.3 eV, and a NBO peak at 531 eV from the CaOSi or the FeOSi moieties (Ca and Fe in the M2 site). The O 1s BE increases with the increase in the electronegativity Ca < Mg < Fe < Si. Moreover, the linewidths of these peaks increase when Fe and Mg are both present in either M1 (diopside) or M2 (bronzite) sites.The valence band spectra for the two pyroxenes are rather similar, and quite different from the VB spectra of quartz and olivines. The dispersion of the pyroxene VB spectra is intermediate between the VB spectra of quartz and olivines; the valence band spectrum of pyroxenes are more dispersed than in olivines by about 1.5 eV but less dispersed than quartz by about 1.5 eV. These VB spectra can be assigned using the previous olivine VB spectra and high quality pseudopotential density functional theoretical calculations in the generalized gradient (GGA) approximation. As for the olivine VB spectra, the Fe 3d t_2g and e_g orbitals in M1 and M2 sites of the pyroxene are located at the top of the pyroxene valence band, and the BE of the Fe 3d peaks from M1 are about 0.7 eV smaller than the Fe 3d peaks in M2. The theoretical XPS valence band spectra using the theoretical density of states and the Gelius intensity approximation are is in good semi-quantitative agreement with the experimental spectra. This intermediate dispersion of pyroxenes is due to the partial polymerization of the Si-O units in pyroxenes, and the intermediate charge on the Si atoms as indicated by the Si 2p BE.     

First-principles study of structural,electronic, and optical properties of ZnSnO3

The structural, electronic, and optical properties of ZnSnO₃ were investigated using density functional theory within the generalized gradient approximation. The structure parameters obtained agree well with the experimental results. The electronic structures indicate that ZnSnO₃ is a semiconductor with a direct band gap of 1.0 eV. The calculated optical spectra can be assigned to contributions of the interband transitions from valence band O 2p levels to conduction band Sn 5s levels or higher conduction band Zn 3d levels in the low-energy region, and from O 2p to Sn 5p or Zn 4p conduction band in the high-energy region.     

An Auger and X-ray photoelectron spectroscopic study of sodium metal and sodium oxide

Photoelectron and Auger electron measurements have been made on polycrystalline films of sodium metal evaporated in ultra high vacuum, and on Na₂O produced by in-situ oxidation by dry oxygen. Most of the spectra were recorded using Mg Kα (1254 eV) radiation but excitation by 5 keV electrons or monochromatized Al Kα (1487 eV) X-rays was used for specific purposes. Core and valence electron binding energies, photoionization cross-sections relative to Na 1s, KLL and KLV Auger energies and transition probabilities are reported. Energy losses in the metal and oxide are discussed and the relative intensities of surface and bulk plasmon losses have been used to calculate mean electron escape depths in the metal. When corrections were made for experimental geometry, escape depths of 10 Å at 180 eV and 31 Å at 1200 eV were obtained. An escape depth of 23 Å at 980 eV was obtained by Na 1s-Na K-Auger intensity correlation and this is consistent with the plasmon data. Data on Auger satellite lines are presented and, in particular, evidence has been obtained which indicates that a high energy satellite should not be attributed to a plasmon gain mechanism. Valence band influences on the KLV Auger spectra are discussed with reference to the XPS spectrum and other sources of valence band information. Unexpected structure was found in the KLV spectra of the metal which, pending thorough interpretation, offsets the sensitivity and resolution advantages which these spectra otherwise offer for valence band studies.     

Angle-resolved photoemission study of Ag nanofilms grown on fcc transition-metal (111) substrates

A comparative study of the electronic structures of Ag nanofilms on the pseudomorphic metastable fcc Fe(111) and bulk-like fcc Co(111) substrates has been carried out to investigate their quantized electronic structures. The photoemission spectra of both Ag nanofilms exhibit the fine structures derived from the quantized sates of Ag sp valence electron. The nanofilm-thickness dependences of the binding energy of the quantized states are reproduced by the calculated results based on the phase accumulation model. From the angle-resolved photoemission measurements, the effective masses of the quantized electronic states along the direction parallel to the nanofilm surface were directly determined. We discuss the electronic hybridization effect between quantized states in Ag nanofilm and 3d-derived electronic states in transition-metal substrates.