Theoretical band structure calculation and superconductivity of NbC under pressure

Abstract

We report a theoretical calculation of the band structure and superconductivity of niobium carbide in the NaCl structure under pressure. The effect of pressure on the band structure is obtained by means of the self-consistent linear muffin-tin orbital method. The parameters necessary to calculate the superconducting transition temperature (T_c) are taken from our band structure results. The dependence of total energy on volume is calculated and is in good agreement with other earlier works. The calculated value of the cell parameter is in agreement with the experimental value (8.45 a.u). McMillan formula is used to calculate the value of T_c The calculated values of T_c are compared with the available experimental data.     

InSe的高压电输运性质研究

高压下对InSe样品进行原位电阻率和霍尔效应测量. 电阻率测量结果显示, 样品在5–6 GPa区间呈现金属特性, 在12 GPa 的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变, 且具有金属特性. 霍尔效应测量结果显示, 样品在6.6 GPa由p型半导体转变成n型半导体, 电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的. 关键词： InSe 高压 电阻率 霍尔效应     

高压下ZnSe的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同的压强下ZnSe晶体闪锌矿结构,得到了它的平衡晶格常数、总能量、电子态密度分布、能带结构、光反射与吸收系数等性质,详细讨论了高压下ZnSe的电子结构,并且结合实验结果定性地分析了高压下的光学性质. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

Electronic structure and thermodynamic properties of LiBC under high pressure

This paper investigates the electronic structure and thermodynamic properties of LiBC in the hexagonal structure by using the generalized gradient approximation （GGA） and local density approximation correction scheme in the frame of density functional theory. The geometric structure of LiBC under zero pressure, and the dependences of the normalized lattice parameters a/ao and c/co, the ratio e/a, the normalized primitive volume V/Vo on pressure are given. The thermodynamic quantity （including the heat capacity Cv, Debye temperature 6~D, thermal expansion a and Grfineisen parameter -y） dependences on temperature and pressure are obtained through the GGA method and the quasi-harmonic Debye model. The band structures and density of state of LiBC under different pressures have also been analysed.     

Electronic and optical properties of BAs under pressure

The electronic and optical properties of boron arsenide (BAs) in the zinc-blende (ZB) and rock-salt (RS) phases have been studied by the density functional theory (DFT) method based on the generalized gradient approximation (GGA). Using the enthalpy-pressure data, the structural phase transition from ZB to RS is observed at 141 GPa. Our calculated electronic properties show that ZB-BAs is a semiconductor, whereas RS-BAs is a semi-metal. Calculations of the dielectric function and absorption coefficient have been performed for the energy range 0-30 eV. The dependence of pressure on band structure and optical spectra is also investigated. The results are compared with available theoretical and experimental data.     

γ-Si3N4在高压下的电子结构和物理性质研究

采用基于密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA-PW91)，计算了不同压强下γ-Si₃N₄的电子结构、光学性质和力学性质.基于计算结果，分析讨论了γ-Si₃N₄各物理参数随外压力的变化规律.计算表明，γ-Si₃N₄是一种适合于在高压条件下工作的材料.     

Electronic structure and high pressure phase transition in LaSb and CeSb

The electronic structure and high pressure structural phase transition in lanthanum and cerium antimonides have been investigated using the tight binding LMTO method. Calculation of the total energy reveals that the simple tetragonal structure is stable at high pressure for both the compounds. In LaSb, the calculated values of the equilibrium cell volume and the cell volume at which phase transition occurs agree with the experimental results. However, in CeSb, the agreement is not so good. We have also predicted the most favouredc/a value in the simple tetragonal phase for these compounds. Further, we present the calculated results on the electronic structure of these systems at the equilibrium as well the reduced cell volumes.     

Electronic structure and lattice properties of zinc-blende InN under high pressure

Dependencies of electronic structure and lattice properties of InN with zinc-blende structure on hydrostatic pressure are presented based on band structures computed using the empirical pseudopotential method. The pressure behavior of the pseudopotential form factors have been analyzed. The effect of pressure on the density of states has been examined. Trends in bonding and ionicity under pressure are also discussed. Our results show as well that the absolute value of the Fourier transform of the valence charge density might be useful in the prediction of the phase transition in zinc-blende materials. Received 25 May 2001 and Received in final form 16 January 2002     

γ-Si3N4在高压下的电子结构和物理性质研究

采用基于密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA-PW91),计算了不同压强下γ-Si3N4的电子结构、光学性质和力学性质.基于计算结果,分析讨论了γ-Si3N4各物理参数随外压力的变化规律.计算表明,γ-Si3N4是一种适合于在高压条件下工作的材料.     

高压下ZnS的电子结构和性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，计算研究了闪锌矿结构的ZnS晶体在不同的外界压强下的电子结构. 通过分析发现，随着外界压强的增大，晶格常数和键长在不断缩小，从S原子向Zn原子转移的电荷越来越少，Zn—S键的共价性逐渐增强，Zn原子和S原子的态密度都有不同程度的变化，而且还有向低能量移动的趋势. 当外界压强达到24GPA时，ZnS从直接带隙半导体变成间接带隙半导体，而且随着压强的增大，间接带隙逐渐变小，直接带隙逐渐增大. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

钙钛矿CaTiO3的超高压结构研究

利用同步辐射x射线衍射和 DAC 高压技术在室温下测量了钙钛矿CaTiO₃在压力0—44.53 GPa下的结构变化.结果表明，随着压力的增加CaTiO₃的三个晶轴都受到不同程度的压缩，a,b的压缩率相近且相对比较大，c的压缩率最小，但没有证据表明有相变的发生.在压力范围内CaTiO₃的P-V关系用Murnaghan状态方程表示，设定K′0=4，得到V0=0.2245(6)nm3和K0=222(9) GPa.应用赝立方角γpc与压力的关系，初 关键词： 3')" href="#">CaTiO₃ 结构 超高压 状态方程     

Electrical resistivity studies of benzidine-TCNQ and its inclusion compound under high pressure

Electrical resistivity studies of the charge transfer complex benzidine—TCNQ and its inclusion compound, have been carried out up to pressures 8 GPa. Two types of behaviour were observed in these complexes under high pressure and this difference is interpreted and discussed.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为,得出 AlN在16.7Gpa附近存在等结构相变,即由直接带隙结构转变为间接带隙结构。同时,结合高压下的态密度分布图和能级移动情况,分析了AlN在高压下的光学性质,吸收谱有向高能端移动(蓝移) 的趋势。     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为,得出 AlN在16.7Gpa附近存在等结构相变,即由直接带隙结构转变为间接带隙结构。同时,结合高压下的态密度分布图和能级移动情况,分析了AlN在高压下的光学性质,吸收谱有向高能端移动(蓝移) 的趋势。     

原位高压测试技术在高压结构及性质研究中的应用

高压科学是研究不同压力条件下物质的结构、状态、理化性质及变化规律的学科。在高压科学研究中,多以凝聚态物质为研究对象,涉及的领域也非常广泛,包括物理学、化学、材料学、地质学、生物学、航天学等等,是一门以实验为基础的学科。高压科学之所以能成为一门独立的学科,还因为高压研究需要使用特殊且精巧的技术和方法来实现,是以技术创新为牵引的科学研究领域。而今,各种实验测试手段已经可以成熟地运用在该学科中,比较常见的有：高压拉曼散射、高压红外光谱、高压布里渊散射、高压同步辐射XRD、高压电学测量以及高压磁学测量等诸多技术。文章系统介绍了以上高压原位实验测试方法的原理、发展、作用及应用,有助于读者对原位高压测试技术有更深刻的认识和理解,为更高压力下的原位高压探测技术的发展提供重要的基础和借鉴。     

A study on the electrical property of HgSe under high pressure

Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.     

高压下富氢高温超导体的研究进展

近年来,高压强极端条件下的富氢化合物成为高温超导体研究的热点目标材料体系.该领域目前取得了两个标志性重要进展,先后发现了共价型H3S富氢超导体(Tc=200 K)和以LaH10(Tc=260 K,–13℃),YH6,YH9等为代表的一类氢笼合物结构的离子型富氢超导体,先后刷新了超导温度的新纪录.这些研究工作燃发了人们在高压下富氢化合物中发现室温超导体的希望.本文重点介绍高压下富氢高温超导体的相关研究进展,讨论富氢化合物产生高温超导电性的物理机理,展望未来在富氢化合物中发现室温超导体的可能性并提出多元富氢化合物候选体系.     

Simple cubic arsenic under pressure

Abstract

We report here a calculation of the band structure and superconductivity of Arsenic in the simple cubic phase under pressure. The effect of pressure on the band structure is obtained using Andersen's linear muffin-tin orbital method under atomic sphere approximation. McMillan's formula is used to calculate the superconducting transition temperature (T_c). The theoretically calculated valve of T_c in sc phase at 26.6 GPa is 3.62 K. Further increase in pressure decreases the T_c values.     

高压下RhB的相变、弹性性质、电子结构及硬度的第一性原理计算

采用密度泛函理论中的赝势平面波方法系统地研究了高压下RhB的结构相变、弹性性质、电子结构和硬度.分析表明,RhB在25.3 GPa时从anti-NiAs结构相变到FeB结构,这两种结构的弹性常数、体弹模量、剪切模量、杨氏模量和弹性各向异性因子的外压力效应明显.电子态密度的计算结果显示,这两种结构是金属性的,且费米能级附近的峰随着压强的增大向两侧移动,赝能隙变宽,轨道杂化增强,共价性增强,非局域化更加明显.此外,硬度计算结果显示,anti-NiAs-RhB的金属性比较弱,有着较高的硬度,属于硬质材料.     

Electronic structure and optic absorption of phosphorene under strain

We studied the electronic structure and optic absorption of phosphorene (monolayer of black phosphorus) under strain. Strain was found to be a powerful tool for the band structure engineering. The in-plane strain in armchair or zigzag direction changes the effective mass components along both directions, while the vertical strain only has significant effect on the effective mass in the armchair direction. The band gap is narrowed by compressive in-plane strain and tensile vertical strain. Under certain strain configurations, the gap is closed and the energy band evolves to the semi-Dirac type: the dispersion is linear in the armchair direction and is gapless quadratic in the zigzag direction. The band-edge optic absorption is completely polarized along the armchair direction, and the polarization rate is reduced when the photon energy increases. Strain not only changes the absorption edge (the smallest photon energy for electron transition), but also the absorption polarization.