Pressure dependence of the Raman spectra of indium sulphide

Raman spectra of InS single crystals have been studied at different hydrostatic pressures up to 1.2 GPa. Mode-Grüneisen parameters have been obtained for Raman-active normal modes. It is shown that the variations observed in Raman spectra with growing pressure can be interpreted from the standpoint of the structural phase transition D¹²_2h → D¹⁷_4h in InS as the hydrostatic pressure continues to increase. The transition pressure has been evaluated at (7 ± 1) GPa.     

Pressure dependence of the Raman spectra of aqueous solutions and anthracene

The shifts of the main bands in the Raman spectra during isothermal pressurization up to 140 MPa for anthracene and 1 M solutions of NaClO₄ and Na₂WO₄ are measured using an optical cell with sapphire windows. The resulting shifts in the maxima of the spectral bands (from 0.6 to 1.1 cm^?1 per 100 MPa) are close to the published value for a 1 M Na₂SO₄ aqueous solution.     

Temperature dependence of second order Raman spectra of rubidium iodide crystal

The temperature variation of the second order Raman spectra of RbI has been theoretically studied in three basic symmetries on the basis of the modified Born and Bradburn theory. The phonon frequencies and corresponding eigenvectors have been determined at the room temperature by employing a three body force shell model. It has been assumed that the major factor which governs the temperature dependence of Raman intensity is the occupation number and the changes in the phonon eigen data and the polarizability parameters with temperature have been ignored. Calculations have been made at three temperatures namely, 300,90 and 23 K and the theoretical results have been compared to the experimental Raman spectra.     

Temperature dependence of the linewidth of the first-order Raman spectra for MnF2 crystal

The first-order Raman spectra ofE _gandA _1g modes in MnF₂ crystal were measured at temperatures from 4.2 to 563 K, and the values of the linewidths obtained. The temperature dependence of the linewidths was analyzed by the phonon dispersion curves based on the rigid ion model, and the result showed that it was caused approximately by the cubic anharmonic term in crystal potential energy.     

Doping dependence of the electronic Raman spectra in cuprates

We report electronic Raman scattering measurements on Bi₂Sr₂(Y_1−xCa_x)Cu₂O_8+δ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to be very different in B_1g and B_2g geometries. Also, we do not find evidence of any significant variation in the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B_2g upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the doping level.     

Pressure dependence of the Raman scattering in the ordered phase of NH4Cℓ

We have observed Raman scattering in NH₄C? from 105K to 295K and up to 7kbar hydrostatic pressure, including the disordered phase II and the ordered phase IV. The pressure dependences of internal and lattice modes are reported, as well as that of the libration mode. The results are applied to several theories of the potential barrier to rotation.     

掺Nd锆石类激光晶体的Raman光谱研究

测量了Nd∶YVO4和Nd∶GdVO4两种激光晶体的高温拉曼光谱.根据空间群理论指认了测定的特征谱线,依据晶格动力学理论导出了晶体热导率与积分拉曼散射强度的关系.计算了不同方向的晶体热导率,得到了与实验符合的结果.把Nd∶GdVO4晶体的高热导率归因于授主离子的质量和半径的增大,以及由此导致的晶体场效应的显著增强. 关键词： Raman光谱 激光晶体 热导率 空间群     

High-temperature Raman spectra of KDP:Ni crystal

High-temperature Raman scattering measurements of KDP doped with Ni (1% weight) were performed over the spectral range 50–1200 cm^?1. The X-ray powder diffraction patterns taken at room temperature and analyzed by Rietveld refinement showed that doped samples of KDP:Ni have the same tetragonal structure of a pure KDP crystal, but with a contraction of the crystalline cell. The behavior of the high-temperature Raman spectra indicate that two phase transitions occur, one at 413 K and another one at 443 K. These phase transitions occur at temperatures below the thermal dehydratation point, 488 K. DTA and TGA measurements reveals that KDP:Ni and pure KDP have the same thermal dehydratation temperature.     

KDP晶体拉曼散射角度特性

利用群理论详细分析了磷酸二氢钾(KDP)晶体的拉曼振动模式,得出了其拉曼振动模的归类?并采用拉曼光谱仪测量了Z切退火KDP晶体X(ZZ)X,Z(XY)Z和Y(XY)X三种散射配置和未退火KDP晶体Z(XY)Z配置下的拉曼光谱?根据拉曼选择定则得出X(ZZ)X,Z(XY)Z和Y(XY)X散射配置下的拉曼峰分别对应A1,B2(LO)?B2(TO)对称类振动模,但在Z(XY)Z配置下的拉曼光谱中除了B2模,还观察到了A1模,而在Y(XY)X配置下的拉曼光谱中只有B2模,且退火和未退火晶体Z(XY)Z配置下的拉曼光谱无明显差别,此结果表明KDP晶体的对称性降低,在背向散射时A1模也具有角度特性,但与晶体的内应力无关,这是由KDP晶体内部结构决定的?     

KDP晶体拉曼散射角度特性

利用群理论详细分析了磷酸二氢钾(KDP)晶体的拉曼振动模式,得出了其拉曼振动模的归类。并采用拉曼光谱仪测量了Z切退火KDP晶体X(ZZ)珡X,Z(XY)珚Z和Y(XY)X三种散射配置和未退火KDP晶体Z(XY)珚Z配置下的拉曼光谱。根据拉曼选择定则得出X(ZZ)珡X,Z(XY)珚Z和Y(XY)X散射配置下的拉曼峰分别对应A1,B2(LO),B2(TO)对称类振动模,但在Z(XY)珚Z配置下的拉曼光谱中除了B2模,还观察到了A1模,而在Y(XY)X配置下的拉曼光谱中只有B2模,且退火和未退火晶体Z(XY)珚Z配置下的拉曼光谱无明显差别,此结果表明KDP晶体的对称性降低,在背向散射时A1模也具有角度特性,但与晶体的内应力无关,这是由KDP晶体内部结构决定的。     

Pressure and temperature dependence of Raman scattering and optical absorption in crystalline S4N4

Raman scattering and optical absorption in crystalline S₄N₄ have been measured both as a function of pressure at 295 K and low temperatures. Polarized single crystal Raman data were also obtained as an aid in the assignment of the Raman active phonons. The pressure coefficients of the Raman active external and S-S stretching modes show a discontinuity near 7 kbar indicative of a second order phase change. The optical absorption edge at about 2.5 eV of a sublimed film of S₄N₄ shows red shifts of 1.3 × 10^?5 eV bar^?1 and 6.3 × 10^?4 eV K^?1 with pressure and temperature respectively. In the light of these results, the electronic, vibrational and structural properties of the crystal are discussed.     

Theoretical polarization dependence of the two-phonon double-resonant Raman spectra of graphene

The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, whichare enhanced through double-resonant scattering processes. Though there are manytheoretical papers on this topic, none of them predicts the spectra within a single model.Here, we present results for the two-phonon Raman spectra of graphene calculated by meansof the quantum-mechanical perturbation theory. The electronic and phonon dispersions,electronic lifetime, electron-photon and electron-phonon matrix elements, are all obtainedwithin a density-functional-theory-based non-orthogonal tight-binding model. We studysystematically the overtone and combination two-phonon Raman bands, and, in particular,the energy and polarization dependence of their Raman shift and intensity. We find thatthe ratio of the integrated intensities for parallel and cross polarized light for alltwo-phonon bands is between 0.33 and 0.42. Our results are in good agreement with theavailable experimental data.     

The temperature dependence of the Raman spectra of chromium‐doped titanite (CaTiOSiO4)

The temperature dependence of the Raman bands of Cr⁴⁺ modes which show enhanced intensities due to pre‐resonance effects is reported from 293 to 673 K in chromium‐doped titanite (CaTiOSiO₄). Some aspects of the temperature dependence of Raman bands in pure, synthetic titanite which have not been previously published are also included in this study. Two Raman‐active components of A_g and B_g symmetry, respectively, of the symmetric Si–O mode in titanite are predicted under P2₁/a symmetry and also been identified in this phase for the first time. The one component of B_g symmetry disappears just above the antiferroelectric–paraelectric transition at ~500 K in accordance with the predictions under A2/a symmetry for the high‐temperature phase. Two resonance‐enhanced components of the Cr⁴⁺–O stretch are also evident in the P2₁/a phase and only one could be identified in the A2/a phase, again in accordance with group‐theoretical predictions. These observations can be used to characterize the P2₁/a and A2/a phases of pure synthetic and chromium‐doped titanite. The temperature dependence of the Cr⁴⁺–O modes can be approximated by two‐dimensional Ising behavior with the critical exponent β ≈ 1/8 below 450 K. Between 450 and 498 K, anomalous behavior is observed and this could be due to the appearance of mobile anti‐phase boundaries (APBs). Anomalous behavior also persists to temperatures above 500 K. The half‐width of the Ti–O stretching mode reflects the influence of the order parameter (Ti–O displacements) as well as mobile anti‐phase boundaries. No evidence could be found of the existence of other ions such as Cr⁴⁺‐ions in Ti‐sites and/or Cr³⁺‐ions also in Ti‐positions in Cr‐doped titanite in the Raman spectra using different laser lines to excite the spectra. Copyright © 2013 John Wiley & Sons, Ltd.     

PbMoO4晶体生长基元和生长习性的高温拉曼光谱研究

应用高温拉曼光谱研究了PbMoO4熔体中的生长基元.通过对不同温度下PbMoO4晶体拉曼光谱和熔点温度附近熔体高温拉曼光谱的研究,发现PbMoO4熔体中存在Pb2 阳离子和[MoO4]2-阴离子生长基元.进一步讨论了PbMoO4晶体生长基元和各个低指数晶面间的相互作用,解释了晶体的生长习性和枝晶生长的原因,并指出:PbMoO4晶体生长的最佳籽晶取向是平行于其{101}面所围成的棱锥表面的方向.