Effect of Si addition on the stability of Al-10Ti-5Cu-xSi alloy/SiC interface

The effect of Si addition on the interfacial stability of Al-10Ti-5Cu-xSi (x = 0, 5, 10, 15) alloy/SiC is investigated. SiC and the Al-10Ti-5Cu-xSi alloys were compacted to obtain a stable interface with 10 wt% Si. Analysis of the processing conditions and the microstructures indicated that an excellent Ti₃SiC₂ phase had been formed and the deleterious Al₄C₃ phase had been eliminated successfully by the addition of 10 wt% Si to the Al-10Ti-5Cu alloy. Formation of Ti₃SiC₂ increased at first and then decreased, while the formation of Al₄C₃ was gradually inhibited with increasing Si content. Ti₃SiC₂ possesses good chemical stability, and flexibility. However, Al₄C₃ degrades within few days, in composites exposed to ambient conditions. The presence of Ti₃SiC₂ at the interface and the elimination of Al₄C₃ together ameliorate the bonding of Al-10Ti-5Cu-xSi alloy to SiC, thereby improving the interfacial stability of Al-10Ti-5Cu-xSi/SiC.     

Microstructure and mechanical properties of nano-Y2O3 dispersed ferritic steel synthesized by mechanical alloying and consolidated by pulse plasma sintering

Ferritic steel with compositions 83.0Fe–13.5Cr–2.0Al–0.5Ti (alloy A), 79.0Fe–17.5Cr–2.0Al–0.5Ti (alloy B), 75.0Fe–21.5Cr–2.0Al–0.5Ti (alloy C) and 71.0Fe–25.5Cr–2.0Al–0.5Ti (alloy D) (all in wt%) each with a 1.0?wt% nano-Y₂O₃ dispersion were synthesized by mechanical alloying and consolidated by pulse plasma sintering at 600, 800 and 1000°C using a 75-MPa uniaxial pressure applied for 5?min and a 70-kA pulse current at 3?Hz pulse frequency. X-ray diffraction, scanning and transmission electron microscopy and energy disperse spectroscopy techniques have been used to characterize the microstructural and phase evolution of all the alloys at different stages of mechano-chemical synthesis and consolidation. Mechanical properties in terms of hardness, compressive strength, yield strength and Young's modulus were determined using a micro/nano-indenter and universal testing machine. All ferritic alloys recorded very high levels of compressive strength (850–2850?MPa), yield strength (500–1556?MPa), Young's modulus (175–250?GPa) and nanoindentation hardness (9.5–15.5?GPa), with up to 1–1.5 times greater strength than other oxide dispersion-strengthened ferritic steels (<1200?MPa). These extraordinary levels of mechanical properties can be attributed to the typical microstructure of uniform dispersion of 10–20-nm Y₂Ti₂O₇ or Y₂O₃ particles in a high-alloy ferritic matrix.     

Surface characterization and growth mechanism of laminated Ti3SiC2 crystals fabricated by hot isostatic pressing

Laminated Ti₃SiC₂ crystals were prepared by hot isostatic pressing from Ti, Si, C and Al powders with NaCl additive in argon at 1350 °C. The morphology and microstructure of Ti₃SiC₂ crystals were investigated by means of XRD, SEM, and TEM. The high symmetry and crystalline was revealed by high resolution transmission electronic microscope (HRTEM) and selected area electron diffraction (SAED). The growth mechanism of Ti₃SiC₂ crystals controlled by two-dimensional nucleation was put forward. The growth pattern of layered steps implies that the growth of the (0 0 2) face should undergo two steps, the intermittent two-dimensional nucleation and the continuous lateral spreading of layers on growth faces.     

Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films

SiC_xN_y thin films with different nitrogen contents were deposited by way of incorporation of different amounts of nitrogen into SiC_0.70 using unbalanced reactive dc magnetron sputtering method. Their phase configurations, nanostructures and mechanical behaviors were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM) and microindentation methods. The result indicated SiC_0.70 and all SiC_xN_y thin films exhibited amorphous irrespective of the nitrogen content. The phase configuration and mechanical behaviors of SiC_xN_y thin films strongly depended on nitrogen content. SiC_0.70 exhibited a mixture consisting of SiC, Si and a small amount of C. Incorporated nitrogen, on one hand linked to Si, forming SiN_x, on the other hand produced CN_x and C at the expense of SiC. As a result, an amorphous mixture consisting of SiC, SiN_x, C and CN_x were produced. Such effects were enhanced with increase of nitrogen content. A low hardness of about 16.5 GPa was obtained at nitrogen-free SiC_0.70. Incorporation of nitrogen or increase of nitrogen content increased the film hardness. A microhardness maximum of ∼29 GPa was obtained at a nitrogen content of 15.7 at.%. This value was decreased with further increase of N content, and finally a hardness value of ∼22 GPa was obtained at a N content of ∼25 at.%. The residual compressive stress was consistent with the hardness in the nitrogen content range of 8.6-25.3 at.%.     

Effect of hydrogen-doping on bonding properties of Ti3SiC2

Using the first principles method based on the density functional theory, we investigated the effect of hydrogen-doping on bonding properties of Ti₃SiC₂. The formation energies of hydrogen interstitials in three possible positions were calculated. The results show that hydrogen favors residing near the (0 0 1) Si plane. In these positions, hydrogen is hybridized most with 1s states of lattice atoms (Si and C), instead of Ti. The presence of hydrogen does not substantially influence the bonding nature of Ti₃SiC₂; chemical bonding is characterized by the hybridizations of Ti d-Si p and Ti d-C p states, and yields high strength. This is contrary to hydrogen-doping in transition metals, where the electron of hydrogen fills in the d bands of the metals and, as a consequence, decreases the cohesive strength of the lattice.     

First-principles investigation of the intrinsic defects in Ti3SiC2

First-principles calculations have been carried out to investigate intrinsic defects including vacancies, interstitials, antisite defects, Frenkel and Schottky defects in the 312 MAX phase Ti₃SiC₂. The formation energies of defects are obtained according to the elemental chemical potentials which are determined by the phase stability conditions. The most stable self-interstitials are all found in the hexahedral position surrounded by two Ti(2) and three Si atoms. For the entire elemental chemical potential range considered, our results demonstrated that Si and C related defects, including vacancies, interstitials and Frenkel defects are the most dominant defects. Besides, the present calculations also reveal that the formation energies of C and Si Frenkel defects are much lower than those of all Schottky defects considered. In addition, the calculated profiles of densities of states for the defective Ti₃SiC₂ indicate that these defects should have great influence on its thermal and electrical properties.     

Role of Ti in the luminescence process of Al2O3:Si,Ti

Al₂O₃:Si,Ti, prepared under oxidizing condition at high temperature, gives PL emission around 430 nm when excited with 240 nm. The Al₂O₃:C, TL/OSL phosphor, also shows emission around 430 nm, which corresponds to characteristic emission of F-center. Thus, to identify the exact nature of luminescent center in Al₂O₃:Si,Ti, fluorescence lifetime measurement studies were carried out along with the PL,TL and OSL studies. The PL and TL in Al₂O₃:Si,Ti show emission around 430 nm and the time-resolved fluorescence studies show lifetime of about 43 μs for the 430 nm emission, which is much smaller than the reported lifetime of ∼35 ms for the 430 nm emission (F-center emission) in Al₂O₃:C phosphor. Therefore, the emission observed in Al₂O₃:Si,Ti phosphor was assigned to Ti⁴⁺ charge transfer transition. Fluorescence studies of Al₂O₃:Si,Ti do not show any traces of F and F⁺ centers. Also, Ti⁴⁺ does not show any change in the charge state after gamma-irradiation. On the basis of the above studies, a mechanism for TSL/OSL process in Al₂O₃:Si,Ti is proposed.     

In-situ TiC particle reinforced Ti–Al matrix composites: Powder preparation by mechanical alloying and Selective Laser Melting behavior

Mechanical alloying of Ti–Al–graphite elemental powder mixture was performed to synthesize nanocomposite powder with Ti(Al) solid solution matrix reinforced by in-situ formed TiC particles. The evolutions in phases, microstructures, and compositions of milled powders with the applied milling times were investigated. It showed that with increasing the milling time, the starting irregularly shaped powder underwent a successive change in its morphology from a flattened shape (10 h) to a highly coarsened spherical one (15 h) and, eventually, to a fine, equiaxed and uniform one (above 25 h). The prepared TiC/Ti(Al) composite powder was nanocrystalline, with the estimated average crystallite size of 12 nm and of 7 nm for Ti(Al) and TiC, respectively. Formation mechanisms behind the microstructural development of powders were elucidated. The Ti(Al) solid solution is formed through a gradual and progressive solution of Al into Ti lattice. The formation of TiC is through an abrupt, exothermic, and self-sustaining reaction between Ti and C elements. Selective Laser Melting (SLM) of as-prepared TiC/Ti(Al) composite powder was performed. The TiC particle reinforced TiAl₃ (a major phase) and Ti₃AlC₂ (a minor phase) matrix composite part was obtained after SLM. Although a slight grain growth occurred as relative to as-milled powder, the SLM processed composites still exhibited a refined microstructure.     

Active metal brazing of Al2O3 to Kovar® (Fe–29Ni–17Co wt.%) using Copper ABA® (Cu–3.0Si–2.3Ti–2.0Al wt.%)

The application of an active braze alloy (ABA) known as Copper ABA® (Cu–3.0Si–2.3Ti–2.0Al wt.%) to join Al₂O₃ to Kovar® (Fe–29Ni–17Co wt.%) has been investigated. This ABA was selected to increase the operating temperature of the joint beyond the capabilities of typically used ABAs such as Ag–Cu–Ti-based alloys. Silica present as a secondary phase in the Al₂O₃ at a level of ~5 wt.% enabled the ceramic component to bond to the ABA chemically by forming a layer of Si₃Ti₅ at the ABA/Al₂O₃ interface. Appropriate brazing conditions to preserve a near-continuous Si₃Ti₅ layer on the Al₂O₃ and a continuous Fe₃Si layer on the Kovar® were found to be a brazing time of ≤15 min at 1025 °C or ≤2 min at 1050 °C. These conditions produced joints that did not break on handling and could be prepared easily for microscopy. Brazing for longer periods of time, up to 45 min, at these temperatures broke down the Si₃Ti₅ layer on the Al₂O₃, while brazing at ≥1075 °C for 2–45 min broke down the Fe₃Si layer on the Kovar® significantly. Further complications of brazing at ≥1075 °C included leakage of the ABA out of the joint and the formation of a new brittle silicide, Ni₁₆Si₇Ti₆, at the ABA/Al₂O₃ interface. This investigation demonstrates that it is not straightforward to join Al₂O₃ to Kovar® using Copper ABA®, partly because the ranges of suitable values for the brazing temperature and time are quite limited. Other approaches to increase the operating temperature of the joint are discussed.     

Core level and valence band studies of layered Ti3SiC2 by high resolution photoelectron spectroscopy

The ternary compund Ti₃SiC₂ is a prominent representative of a new class of layered ceramics whose extraordinary physical properties has attracted much attention in recent years. Ti₃SiC₂ is electrically and thermally highly conductive, elastically rigid, lightweight, and maintains its strength to high temperatures. It is furthermore damage tolerant and oxidation resistant. We have studied fractured surfaces of coarse-grained Ti₃SiC₂ by means of photoelectron spectroscopy at the MAX-lab synchrotron radiation facility in Lund, Sweden. High-resolution C 1s, Si 2p, Ti 2p, Ti 3s and Ti 3p core-level spectra are reported and interpreted in terms of crystallographic and electronic structure. Valence band spectra confirm the validity of recent band calculations.     

Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance \rho _c as low as 8.64×10^-6\Omega\cdot cm² is achieved after annealing in N₂ at 900℃ for 5\,min. The sheet resistance R_sh of the implanted layers is 975\Omega/\sqcap\!\!\!\!\sqcup. X-ray diffraction (XRD) analysis shows the formation of Ti_-3SiC₂ at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.     

Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性

在溶胶-凝胶工艺获得高质量Bi₄Ti₃O₁₂薄膜的基础上 ，制备了Ag/Bi₄Ti₃O₁₂栅n沟道铁电场效应晶体管. 研 究了Si基Bi₄Ti₃O₁₂薄膜的生长特性及其对铁电薄膜/ 硅的界面状态和铁电场效应晶体管存储特性的影响. 研究表明，在合理的工艺条件下可以获 得具有较高c-轴择优取向的纯钙钛矿相Si基Bi₄Ti₃O₁₂ 铁电薄膜并有利于改善Bi₄Ti₃O₁₂/Si之间的界面特性; 顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力; 器件的转移(I< sub>sd}-V_G)特性曲线显示Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有明显的栅极化调制效应. 关键词： 铁电场效应晶体管 4}Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 存储 特性 溶胶-凝胶工艺     

Crystalline Al1 − x Ti x phases in the hydrogen cycled NaAlH4 + 0.02TiCl3 system

The hydrogen (H) cycled planetary milled (PM) NaAlH₄?+?0.02TiCl₃ system has been studied by high resolution synchrotron X-ray diffraction and transmission electron microscopy during the first 10?H cycles. After the first H absorption, we observe the formation of four nanoscopic crystalline (c-) Ti-containing phases embedded on the NaAlH₄ surface, i.e. Al₂Ti, Al₃Ti, Al₈₂Ti₁₈ and Al₈₉Ti₁₁, with 100% of the originally added Ti atoms accounted for. Al₂Ti and Al₃Ti are observed morphologically as a mechanical couple on the NaAlH₄ surface, with a moderately strained interface. Electron diffraction shows that the Al₈₂Ti₁₈ phase retains some ordering from the L1₂ structure type, with the observation of forbidden (100) ordering reflections in the fcc Al₈₂Ti₁₈ lattice. After 2?H cycles the NaAlH₄?+?0.02TiCl₃ system displays only two crystalline Ti-containing phases, Al₃Ti and Al₈₉Ti₁₁. After 10?H cycles, the Al₈₉Ti₁₁ is completely converted to Al₈₅Ti_15. Al₈₉Ti₁₁, Al₈₅Ti₁₅ and Al₃Ti do not display any ordering reflections, and they are modeled in the A1 structure type. Quantitative phase analysis indicates that the Al₃Ti proportion continues to increase with further H cycles. The formation of Ti-poor Al_{1??? x} Ti _x (x?<?0.25) phases in later H cycles is detrimental to hydrogenation kinetics, compared to the starting Ti-richer near-surface Al₂Ti/NaAlH₄ interface present during the first absorption of hydrogen.     

La掺杂对Bi4Ti3O12薄膜铁电性能的影响

利用Sol-Gel法在Pt/Ti/SiO₂/Si衬底上制备出Bi₄Ti₃O₁₂和Bi_3.25La_0.75Ti₃O₁₂薄膜，研究了La掺杂对Bi₄Ti₃O₁₂薄膜的晶体结构、铁电性能和疲劳特性的影响，发现La掺杂没有改变Bi₄Ti₃O₁₂薄膜的基本晶体结构，并且提高了Bi₄Ti₃O₁₂铁电薄膜的剩余极化值和抗疲劳性能，对La掺杂改善Bi₄Ti₃O₁₂铁电薄膜性能的机理进行了讨论. 关键词： 铁电性能 4Ti₃O₁₂薄膜')" href="#">Bi₄Ti₃O₁₂薄膜 3.25La_0.75Ti₃O₁₂薄膜')" href="#">Bi_3.25La_0.75Ti₃O₁₂薄膜 sol-gel法 La掺杂     

Mechanical properties and electronic structure of TiC,Ti0.75W0.25C,Ti0.75W0.25C0.75N0.25, TiC0.75N0.25 and TiN

The first-principles calculations are performed to investigate the mechanical properties and electronic structure of TiC, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, TiC_0.75N_0.25 and TiN. Density functional theory and ultrasoft pseudopotentials are used in this study. From the formation energy, it is found that nitrogen can increase the stability of TiC. The calculated elastic constants and elastic moduli of TiC compare favorably with other theoretical and experimental values. Tungsten and nitrogen are observed to significantly increase the bulk, shear and Young's modulus of TiC. Through the analysis of B/G and Cauchy pressure, tungsten can significantly improve the ductility of TiC. The electronic structure of TiC, TiN, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, and TiC_0.75N_0.25 are used to describe nonmetal–metal and metal–metal bonds. Based on the Mulliken overlap population analysis, the hardness values of TiC, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, TiC_0.75N_0.25 and TiN are estimated.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Raman investigation of chemical reaction product in thermal‐treated SiCf/C/Mo/Ti6Al4V composite

SiC fiber‐reinforced titanium matrix composite (TMC) is an interesting material for aerospace industry because of its excellent properties. Characterization of their interfacial reaction product is principal to further optimization of the TMCs. Here we report application of Raman spectroscopy to identify reaction products and their microstructural details in thermal‐treated SiC_f/C/Mo/Ti6Al4V composite. Meanwhile TEM is performed to help explain phenomena in Raman result. Raman line scanning along interface indicates thickness of two sublayers (Ti₅Si₃(C_x) layer next to SiC fiber and TiC_x layer next to matrix). The main Raman result of phase distribution is confirmed by TEM. While a 300‐nm Ti₃SiC₂ layer whose Raman features are similar with nearby Ti₅Si₃(C_x) layer is also detected. Raman peakshift in Ti₅Si₃(C_x) layer possibly results from residual stress or/and microstructural evolution caused by carbon solution. No evidence indicates Mo participation of interfacial reactions. However, Mo diffusion changes phase distribution of matrix alloy and affects interfacial reaction indirectly. Meanwhile, TEM and Raman results indicate that particles are TiC_x and defective Ti₃AlC₂. Raman features of Ti₃AlC₂ particles differ from that of bulk material, which is attributed to defects. Although Ti₃AlC₂ formation mechanism is ambiguous, it possibly relates to TiC_x formation nearby. Copyright © 2014 John Wiley & Sons, Ltd.     

High pressure studies on α-cristobalite form of Al0.5Ga0.5PO4: hydrostatic versus non-hydrostatic conditions

High pressure angle-dispersive X-ray diffraction investigations have been carried out on α-cristobalite form of Al_0.5Ga_0.5PO₄. Our investigations show that the structural stability of this phase under high pressure depends on the nature of pressure conditions in the diamond anvil cell. Under hydrostatic pressure conditions using neon as a pressure transmitting medium, ambient orthorhombic C222₁ phase transforms to orthorhombic Cmcm phase at 4.9?GPa. The high pressure Cmcm phase remains stable up to the highest pressure in the experiment, i.e. 19?GPa. The values of bulk modulus for C222₁ and Cmcm phases are 19(2) and 126(4)?GPa, respectively. In contrast to this, under non-hydrostatic pressure conditions, transformation of ambient C222₁ phase to Cmcm phase has not observed up to 17.4?GPa. Instead, a new monoclinic phase P2₁ is observed which contains layers of six coordinated Al/Ga ions separated by less dense five coordinated Al/Ga ions.     

Ab initio study of the electronic structure and elastic properties of Al5C3N

We investigate the electronic structure, chemical bonding and elastic properties of the hexagonal aluminum carbonitride, Al₅C₃N, by ab initio calculations. Al₅C₃N is a semiconductor with a narrow indirect gap of 0.81 eV. The valence bands below the Fermi level (E_F) originate from the hybridized Al p-C p and Al p-N p states. The calculated bulk and Young's moduli are 201 GPa and 292 GPa, which are slightly lower than those of Ti₃SiC₂. The values of the bulk-to-shear-modulus and bulk-modulus-to-c44 are 1.73 and 1.97, respectively, which are higher than those of Ti₂AlC and Ti2AlN, indicating that Al₅C₃N is a ductile ceramic.