Metal-insulator transition of solid halogens under pressure

Abstract

The band structure of solid bromine and chlorine have been calculated at different pressures. Our calculations predict that there is a closure of the gap in the direction perpendicular to the molecular planes at pressures around 150, 330 and 670 kbar for I₂, Br₂ and Cl₂ respectively.     

Temperature-pressure phase diagram of CsHSO4

Abstract

On the basis of group theoretical analysis of phase transitions between the phases with known space symmetries the space symmetries of high pressure phases are theoretically predicted. A part of temperaturepressure phase diagram of CsHSO₄ in the region of high temperatures and pressures is theoretically constructed. It is shown that the new pahse of the C¹ _2h space symmetry can be observed at high pressures.     

High-pressure Raman study of SnGeS3

Abstract

We report Raman-scattering studies of SnGeS₃ under hydrostatic pressures up to 19.5 GPa. An assignment to internal-external modes is proposed, based on the pressure slopes obtained. Our data show evidence for two critical pressures, one around 7 GPa and a second one around 12 GPa. The material renders itself Raman inactive at 19.5 GPa. The observed changes are reversible upon pressure release.     

Measurements of saturated basic and acidic rock electrical conductivities at lower crustal temperatures and high pressures

Abstract

Laboratory measurements of the electrical conductivity of brine saturated acidic and metabasic rocks were done at confining pressures up to 0.2 GPa, high pore pressures and temperatures of 900°C. Acidic rocks showed conductivities insufficient to explain the lower crustal high conductivity layer. Basic rocks, however, showed conductivities consistent with the high conductivity layer at those temperatures that the layer is thought to possess.     

Static EOS of uranium to 100 GPa pressure

Abstract

The crystal structure and compressibility of uranium has been determined by energy dispersive X-ray measurements in a diamond-cell apparatus up to pressures of 100 GPa. The alpha phase of uranium remains stable up to the highest pressures as suggested by earlier shock-Hugoniot data. An equation-of-state for alpha-uranium derived from both types of data implies that this phase also remains stable up to 2500 K at Hugoniot pressures of 100 GPa.     

Theoretical calculation for the equations of state and phase transitions of sodium and potassium hydrides

Abstract

The ionic overlap-compression model is used to calculate the equations of state, as well as the equilibrium properties, of sodium and potassium hydrides (NaH and KH). The present results agree with the experimental ones well. The NaC1-to-CsC1 phase transition pressures for both crystals are also determined. The agreement of the theoretical pressures (23.0 GPa for NaH and 4.9 GPa for KH) with the experimental measurements (29.3 GPa and 4 GPa) is rather good. The calculation shows that the effect of the zero-point vibration to the equilibrium properties and the transition pressures should not be ignored.     

Studies of crystallization process of silica and germania glasses at high pressure

Abstract

The process of crystallization of SiO₂ and GeO₂ glasses was studied using samples retrieved after heat treatment at high pressures up to 12GPa. Two different samples of fused quartz and silica gel were studied in order to compare SiO₂ glass structure. Upon heating beyond 400°C at fixed pressures under which stishovite, rutile-type phase, is thermodynamically stable, the SiO₂ glasses underwent crystallization into coesite and stishovite, without quartz. In the course of heating GeO₂ glass in the stability field of rutile-type phase, low-quartz-type phase appeared as an intermediate at pressures below 7GPa, whereas only rutile-type phase was observed at 12GPa. The crystallization sequences are discussed in terms of coordination numbers in the glass and crystalline states.     

Electrical conductivity and thermal EMF of CsI at high pressures

Abstract

The pressure dependence of thermal EMF and the resistivity-temperature dependence of CsI has been measured at pressures 20-50 GPa. In CsI non-monotonous change of resistivity, thermal EMF and activation energy of charge carriers has been observed at pressures above 40 GPa. The sign of thermal EMF corresponds to the electron conductivity. At pressures below 47 GPa the resistivity-temperature dependence is of the type characteristic of non-degenerate semiconductors, at pressure above 49 GPa it is characteristic of degenerate semiconductors (or metals). The observed properties are connected probably with the continuous distortion of B2 to an hcp-like phase.     

Structural phase transition of GeAs under pressure

Abstract

We have measured the effect of pressure on structural properties and the optical response of the layered compound GeAs by means of x-ray powder diffraction and optical reflectivity. The low-pressure semiconducting phase is found to be stable up to 13 GPa. At higher pressures the compound crystallizes in the rocksalt structure. Reflectivity measurements show that the structural change is associated with a semiconductor-to metal-transition. Returning to lower pressures from the region of the cubic phase results in the formation of a metastable tetragonal phase.     

EDXD studies above 400 GPa (and prospects for obtaining pressures near 1 TPa and doing EDXD studies at such pressures)

Abstract

We have now taken two materials (W, Mo) to pressures greater than the pressure at the center of the earth for the first time, with all pressures based on x-ray diffraction and shock-based equations of state. The present paper describes x-ray diffraction studies of a sample in which pressure equals or exceeds 438 GPa. It is noted that as a result of the process of pressure strengthening, pressures of 1 TPa may be attainable.

Presented at the IUCr Workshop on ‘Synchrotron Radiation Instrumenration for HighPressure Crystallography’. Daresbury Laboratory 20-21 July 1991     

Pressure studies of charged donor superlattice in HgSe:Fe

Abstract

New mechanism of reduction of the scattering rate by charged impurities is investigated under hydrostatic pressure by means of classical and quantum transport. Also the critical pressures for the stuctural phase transitions in HgFeSe are determined.     

Effect of High Pressure on Acid Phosphatase in Milk

Acid phosphatase activity was measured in whole milk, skim milk, acid and rennet wheys before and after subjecting samples to high hydrostatic pressures for 10 min. Whole and skim milks exhibited a significant drop in activity following treatment at pressures in excess of 200 MPa. While rennet whey exhibited similar characteristics, acid whey was more pressure resistant and required pressures in excess of 500 MPa before exhibiting a net loss in activity. Most of the activity was lost in the first 10 min of pressurisation.     

Thorium: Phase transformations and equation of state to 300 GPa

Abstract

Equation of state and phase transformations of thorium metal have been investigated to 300 GPa at 300 K in a diamond anvil cell using energy dispersive X-ray diffraction employing synchrotron source. Phase transformations in the 70–100 GPa range indicative of 5f-electron bonding are observed and thorium metal is isostructural with its 4f counterpart cerium at ultra high pressures. The measured static equation of state of thorium to 300GPa (volume fraction V/V _o = 0.40) at 300K is given. At high pressures, the sd to f electronic transfer has significant influence on the measured equation of state of thorium.     

A New Class of Low Compressibility Materials: Clathrates of Silicon and Related Materials

We discuss the high pressure properties of different silicon clathrate structures that we have investigated by means of X-ray diffraction and ab initio calculations. Compressibility, transition pressures or phase transformations are interpreted as a function of the nature of the guest atom intercalation. The compressibility of the clathrate structure is in all cases close to that of silicon diamond whereas transition pressures or the high pressure phases are extremely depending on the nature of the guest atom. We address the implications for obtaining a metallic material as hard as diamond.     

Theoretical Description of High-Pressure Phases of Semiconductors

First-principles ( ab initio ) electronic structure calculations allow detailed studies of the energetics of materials under high pressures. Here we illustrate some of the important themes using mainly examples from work on Si and Ge.     

Evidence of maximum in the melting curve of hydrogen at megabar pressures

Hydrogen at high pressures of ∼400 GPa might be in a zero-temperature liquid ground state (N. Ashcroft, J. Phys.: Condens. Matter A 12, 129 (2000), E. G. Brovrnan et al., Sov. Phys. JETP 35, 783 (1972)). If metallic hydrogen is liquid, the melting T _melt(P) line should possess a maximum. Here we report on the experimental evaluation of the melting curve of hydrogen in the megabar pressure range. The melting curve of hydrogen has been shown to reach a maximum with T _melt = 1050 ± 60 K at P = 106 GPa and the melting temperature of hydrogen decreases at higher pressures so that T _melt = 880 ± 50 K at P = 146 GPa. The data were acquired with the aid of a laser heating technique where diamond anvils were not deteriorated by the hot hydrogen. Our experimental observations are in agreement with the theoretical prediction of unusual behavior of the melted hydrogen [S. Bonev et al., Nature 481, 669 (2004)]. The article is published in the original.     

Effect of pressure on fluorescence of Nd3+ in LaCl3

Abstract

Fluorescence from Nd³⁺ in LaCl₃ is measured at 100 K under pressures up to about 10 GPa. The observed variations of the energy levels are used for the evaluation of crystal field parameters. The pressure-dependence of these parameters is compared with the previous results on Pr³⁺ in LaCl₃.     

Pressure-volume relations for Zn,Cd, Ga,In and TI at room temperature to 30 GPa and above

Abstract

The elemental metals Zn, Cd, Ga, In and TI are studied by energy dispersive X-ray diffraction under pressures up to 30 GPa and above. Room temperature equation of state (EOS) data are derived and compared with results of earlier static and dynamic measurements at lower and higher pressures, respectively.     

A novel fluid densimeter for high pressures

Abstract

A new type of densimeter for the measurement of fluid densities at pressures up to 500 MPa is described. Thie densimeter makes use of the effect of buoyancy on a mass suspended from a wire to determine the resonant frequency of the wire for transverse vibrations. The difference in resonant frequency between oscillations in vacuo and in the fluid thereby permits measurement of the fluid density. Preliminary results demonstrate that the precision and reproducibility of the instrument is one of ± 0.1% at pressures up to 100 MPa.