Equation of state of graphite-like BC

The compressibility of turbostratic boron-substituted graphite (t-BC) was measured up to 12 GPa at room temperature using energy-dispersive X-ray powder diffraction with synchrotron radiation. A fit to the experimental p-V data using Birch-Murnaghan equation of state gives values of the t-BC bulk modulus 23(2) GPa and its pressure derivative 8.0(6). These values point to a higher compressibility of t-BC as compared to turbostratic graphite.     

Crystallographic aspects related to the high pressure–high temperature phase transformation of boron nitride

Crystallographic relations between different forms of boron nitride (BN) appearing at the high pressure–high temperature structural phase transformation have been revealed by high-resolution transmission electron microscopy (HRTEM). As starting materials, crystalline hexagonal BN (hBN) with different degrees of crystallinity, or with defects intentionally introduced, were used. Cubic BN (cBN) is formed only as a minor component, the rest consisting of different forms of sp ² bonded BN: hBN, compressed, monoclinic deformed hBN, or turbostratic BN (tBN). The small cBN crystallites (300–400?nm) contain many defects such as twins, stacking faults and nanoinclusions of other BN forms: tBN, rhombohedral BN (rBN) and wurtzite BN (wBN). The cBN phase grows epitaxially on the basal plane of hBN. The nucleation sites for cBN are revealed by HRTEM. They consist of nanoarches (sp ³ hybridized, highly curved nanostructures), frequently observed at the edges of the hBN crystallites in the starting materials. Based on HRTEM observations of specimens not fully transformed, a nucleation and growth model for cBN is proposed which is consistent with existing theoretical and experimental models.     

In situ infrared spectroscopic study of cubicboron nitride thin film delamination

This paper investigates the procedure of cubic boron nitride （cBN） thin film delamination by Fourier-transform infrared （IR） spectroscopy. It finds that the apparent IR absorption peak area near 1380cm^-1 and 1073 cm^-1 attributed to the B-N stretching vibration of sp2-bonded BN and the transverse optical phonon of cBN, respectively, increased up to 195% and 175% of the original peak area after film delamination induced compressive stress relaxation. The increase of IR absorption of sp2-bonded BN is found to be non-linear and hysteretic to film delamination, which suggests that the relaxation of the turbostratic BN （tBN） layer from the compressed condition is also hysteretic to film delamination. Moreover, cross-sectional transmission electron microscopic observations revealed that cBN film delamination is possible from near the aBN（amorphous BN）/tBN interface at least for films prepared by plasma-enhanced chemical vapour deposition.     

Development of superhard materials,sintered diamond and cubic boron nitride

Abstract

Recent advances on the preparation technique of sintered diamond and cubic boron nitride containing small amount of sintering additives having superior thermal and mechanical properties is reviewed. Sintered diamond of lower metallic content (1–5 vol%) shows high hardness (100–150 GPa) and high electrical resistivity (10⁸ ohm-cm) at room temperature. Reaction sintered cubic boron nitride contained 1–3 mole % of magnesium boron nitride shows high thermal conductivity. (7 watt/cm K at RT)     

Thermoelastic behaviour of hexagonal graphite-like boron nitride

Abstract

A synchrotron X-ray diffraction study on hexagonal graphite-like boron nitride (h-BN) was performed under high pressures and temperatures. From the measured P-V-Trelation for h-BN (with a three-dimensional ordering parameter P₃ = 0.9) in the temperature range from 298 to 1273 K and up to 6.7 GPa, the thermoelastic parameters are derived by fitting a modified high temperature Birch-Murnaghan equation of state. The results are: bulk modulus B₀[GPa] = 27.6-0.0081(T[K]-298) and its pressure derivative B¹ = 10.5 + 0.0016(T [K] - 298). These values are for samples with P₃ = 0.9 and are quite different for samples with different values of the order parameter. This parameter is shown to have a leading role in the determination of the thermoelastic properties of h-BN, which explains and reconciles the differences between previous results.     

等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理

利用感应耦合等离子体增强化学气相沉积法以Ar，He，N₂和B₂H₆为反应气体制备了高纯立方氮化硼薄膜.用四极质谱仪对等离子体状况进行了系统的分析，发现B₂H₆完全被电离而N₂只是部分被电离.H₂和过量的N₂在等离子体中生成大量中性的H原子和活化的N^*₂，它们与表面的相互作用严重地阻碍了立方 关键词： 立方氮化硼薄膜 等离子体 质谱     

Young’s modulus and density of nanocrystalline cubic boron nitride films determined by dispersion of surface acoustic waves

Cubic boron nitride (c-BN) films of 200–420 nm thickness and high phase purity were deposited on silicon (100) substrates by ion-assisted pulsed laser deposition (IA PLD)from a boron nitride target using a KrF-excimer laser, and by plasma-enhanced physical vapor deposition (PE PVD)with a hollow-cathode arc evaporation device. In order to improve the c-BNfilm adhesion, hexagonal boron nitride (h-BN) films with 25–50 nm thickness were used as buffer layers. The density and Young’s modulus of the c-BNfilms were obtained by investigating the dispersion of surface acoustic waves. In data analysis a two-layer model was applied in order to take the influence of the h-BNlayer into consideration. The values for the density vary from 2.95±0.25 g/cm³to 3.35±0.3 g/cm³, and those for the Young’s modulus from 420±40 GPa to 505±30 GPa. The results are compared with literature values reported for nanocrystalline films, polycrystalline disks and single crystal c-BN. Received: 26 March 2001 / Accepted: 29 March 2001 / Published online: 25 July 2001     

Ground state properties of titaniumdiboride

Abstract

The electronics structure, the charge distribution and the total energy of hexagonal titaniumdiboride are calculated using non-local pseudopotentials in both the local density approximation (LDA) and the generalized gradient expansion approximation (GGA). In the LDA we obtain a = 3.023 Å, c = 3.166 Å and B_o = 271. GPa. For these quantities the GGA values are slightly lower and both compare well with experiment. We also determined selected elastic constants by fitting the total energies to a quadratic surface in the lattice parameters. Using strains that do not break the hexagonal symmetry we obtain C₁₁ + C₁₂ = 777.GPa, C₁₃ = 83. GPa and C₃₃ = 568. GPa. Again slightly lower values are obtained using the GGA. These values agree well with a recent experiment.     

hBN ↔ cBN equilibrium line calculated from experimental data on the cBN-to-hBN transformation to 1.4 GPa

Abstract

In the pressure range from 0.3 to 1.4 GPa, the onset temperatures of cBN-to-hBN transformation have been found by quenching method on high-purity single crystals of cubic boron nitride. From the experimental data with allowances made for the kinetics of solid-phase transformation. the hBN?cBN equilibrium line has been calculated, which fits well with the equilibrium phase p, T-diagram of boron nitride.     

立方氮化硼薄膜生长过程中的界面控制

在立方氮化硼薄膜气相生长过程中生成的无定形初期层和乱层结构氮化硼中间层，一直是阻碍立方氮化硼薄膜外延生长的主要原因.系统地分析了硅衬底预处理对立方氮化硼薄膜中无定形初期层成分的影响，发现在等离子体化学气相生长法制备薄膜时，硅衬底上形成无定形初期层的可能原因有氧的存在、离子轰击以及高温下硅的氮化物的形成.在H₂气氛中1200K热处理硅衬底可以有效地减少真空室中残留氧浓度，除去硅表面的自然氧化层，保持硅衬底表面晶体结构.控制衬底温度不超过900 K，就能防止硅的氮化物的形成，成功地除去无 关键词： 立方氮化硼薄膜 等离子体化学气相生长 界面 电子显微镜     

A new boron nitride phase diagram and chemical interaction in the B-N system at high pressures

Abstract

The analysis of the experimental data on the interaction of boron and its compounds with ammonia, nitrogen and hydrazine at 0.5–8.0 GPa and 600 to 1600 K was carried out in the frame of the new conception of phase p, T-diagram for the boron nitride. The results obtained show that in the E-N system an alternative metastable behavior of the forming boron nitride is observed in a wide p,T-range. And a considerable amount of the data obtained cannot be explained on the basis of the generally accepted view on the EN polymorphism.     

Thermal phase stability of rhombohedral boron nitride

Abstract

Thermal phase stability of rhombohedra] boron nitride has been studied between 0 and 8 GPa from 300 to 2700 K. Analysis of the data obtained points to the decisive role of kinetic factors in the rBN phase transformations, the structure and dispersity of the samples under study being of great importance. rBN phase transformations in the cBN thermodynamic stability region of the equilibrium p,T phase diagram for boron nitride occur according to Ostwald stepwise principle by the rBN→hBN→(wBN)→cBN scheme.     

Diamond and cubic boron nitride under high pressure: Raman scattering,equation of state and high pressure scale

Abstract

The development of the diamond-anvil cell has stimulated Raman-scattering investigation of vibrational modes in covalent crystals. The linear pressure coefficient reported for diamond by Hanfland et at' (2.90 ± 0.05 cm-¹/GPa) agrees to within mutual experimental error with the result of Boppard et aL² (2.87±0.01 cm-¹/GPa). As to cubic boron nitride, the only work by Sanjurjo ef aL3 reports 3.45 ± 0.07 cm-¹/GPa for LO- and 3.39 ± 0.08 cm-¹/GPa for TO- modes. Since no compressibility data are availablel^1?3, the mode Griineisen parameter γ = ‐ δ In γ/δ is defined as y = K/Y·dv/aP and depends on the bulk modulus K and the calibration of the ruby scale. The above papers report y= 0.96 and y=0.95±O.O3fordiamondand γ_Lo=1.21,γTo=1.51 forBN.     

Equation of state of boron subarsenide B12As2 to 47 GPa

Compressibility of boron subarsenide B₁₂As₂ has been studied by synchrotron X-ray diffraction up to 47?GPa at room temperature in a diamond anvil cell using Ne pressure transmitting medium. A fit of experimental p–V data by Vinet equation of state yielded the bulk modulus of 150(4) GPa and its first pressure derivative of 6.4(3). No pressure-induced phase transitions have been observed.     

Boron nitride phase diagram. State of the art

Abstract

From recent experimental data on BN thermodynamic propeties, the equilibrium phase diagram for boron nitride has been plotted, which differs from the generally accepted Bundy-Wentorfs one. At atmospheric pressure cubic boron niride has been shown to be a thermodynamically stable modification up to temperatures of 1600 K, which drastically changes the established notions of BN polymorphism, based on assumed analogy of phase diagrams for carbon and boron nitride. These studies have shown that according to the proposed equilibrium phase diagram the threshold pressure of cBN crystallization can be reduced from 4 down to 2 GPa with the supercritical fluids present, which opens new fields for developing methods for cBN low-pressure synthesis.     

Boron–Carbon Nanocomposites Fabricated at High Pressures and Temperatures

Interaction of amorphous boron and C₆₀ fullerite is analyzed at pressures of 2.0 and 7.7. GPa and temperatures of 600–1800°C. Effect of pressure and temperature on the material structure is studied, temperatures for synthesis of boron carbide and diamond are found, and the sequence of transformations of the carbon component is determined. Ultrasonic method is used to measure elastic moduli of the samples, and the dependences of the moduli on the structure are analyzed. It is demonstrated that the boron–carbon nanocomposite synthesized at relatively low pressure (2.0 GPa) and temperature (about 1000°C) exhibits high elastic parameters (bulk modulus, B ≈ 75.3–84.0 GPa; Young modulus, E ≈ 108–119 GPa; and shear modulus, G ≈ 43–47 GPa at a density of about 2.2 g/cm³). The results can be used for development of novel nanocomposite materials.     

White-beam X-ray diffraction and radiography studies on high-boron-containing borosilicate glass at high pressures

ABSTRACT

Multi-angle energy-dispersive X-ray diffraction studies and white-beam X-ray radiography were conducted with a cylindrically shaped (1?mm diameter and 0.7?mm high) high-boron-content borosilicate glass sample (17.6% B₂O₃) to a pressure of 13.7?GPa using a Paris-Edinburgh (PE) press at Beamline 16-BM-B, HPCAT of the Advanced Photon Source. The measured structure factor S(q) to large q?=?19 Å^?1 is used to determine information about the internuclear bond distances between various species of atoms within the glass sample. Sample pressure was determined with gold as a pressure standard. The sample height as measured by radiography showed an overall uniaxial compression of 22.5% at 13.7?GPa with 10.6% permanent compaction after decompression to ambient conditions. The reduced pair distribution function G(r) was extracted and Si–O, O–O and Si–Si bond distances were measured as a function of pressure. Raman spectroscopy of the pressure recovered sample as compared to starting material showed blue-shift and changes in intensity and widths of Raman bands associated with silicate and four-coordinated boron.     

Effect of pressure on the Raman spectra of synthetic diamonds with boron impurity

The raman scattering technique is used for studying diamonds with a 0.04–0.1 at % boron impurity under a pressure up to 3 GPa in a chamber with sapphire anvils. The Raman frequency increases linearly with pressure for all samples with pressure coefficients of 2.947 cm^?1/GPa for pure diamond and 3.01 cm^?1/GPa for boron-doped samples. The Raman linewidths remain unchanged for pure diamond and for diamond with a boron concentration of about 0.04 at % and decrease linearly upon an increase in pressure for samples with a boron concentration of about 0.1 at %. The Raman spectra with a line profile corresponding to the Fano resonance do not change qualitatively up to a pressure of 3 GPa. In diamond samples with a boron impurity exceeding 0.1 at %, the boron concentration in the surface layer can be substantially higher than at the center of the sample.     

Pressure dependence of crystal structure and molecular packing in anthracene

Anthracene molecular crystal has been investigated up to a pressure of 10.5 GPa at room temperature using variable shape variable size Monte Carlo simulations in an isothermal–isobaric ensemble. We have reported various structural quantities, such as cell parameters and unit cell volume, as a function of pressure and compared them with the experimental results [J. Chem. Phys. 119, 1078 (2003)]. The pressure dependence of angles θ, δ and χ which describe the relative packing of molecules in the crystal has been calculated. We report that anthracene molecular crystal does not exhibit any first order phase transition up to a pressure of 10.5 GPa which is consistent with the experimental observations by Oehzelt et al. [Phys. Rev. B 66, 174104 (2002)]. The calculated equation of state (EOS) has been fitted to a Murnaghan-type EOS with good agreement. The calculated bulk modulus and the pressure derivative of bulk modulus are 8.2 GPa and 8.9 respectively which are in agreement with the experimentally calculated values.     

Electrooptical effect in the plasmon structure glass–In<Subscript>2</Subscript>O<Subscript>3</Subscript>: Sn–ferroelectric–Al with a subwavelength grating

We have constructed the equations of state for crystalline boron carbide B₁₁C (C–B–C) and its melt under high dynamic and static pressures. A kink on the shock adiabat for boron carbide has been revealed in the pressure range near 100 GPa, and the melting curve with negative curvature in the pressure range 0–120 GPa has been calculated. The results have been used for interpreting the kinks on the shock adiabat for boron carbide in the pressure range of 0–400 GPa.