Effects of initial crystal size of diamond powder on surface residual stress and morphology in polycrystalline diamond (PCD) layer

Polycrystalline diamond compacts (PDC) were synthesized using diamond powder of average crystal size 3-20 μm by the Ni 70 Mn 25 Co 5 alloy infiltration technique at high temperature and high pressure (HPHT).The surface residual stress of polycrystalline diamond (PCD) layer was measured using micro-Raman spectroscopy with hydrostatic stress model and X-ray diffraction (XRD).Measurements of the stress levels of PCDs show that the residual compressive stresses range from 0.12 to 0.22 GPa,which increase with th...     

Cu-Co双金属团簇结构演化及其性质的分子动力学模拟

采用分子动力学结合嵌入原子方法对比研究了Co分布于Cu-Co团簇不同层的结构和性质.研究表明:Co原子分层掺杂可对团簇的结构转变点和熔点进行诱导控制;分层掺杂的Cu-Co团簇第一相变是一种扩散度较小的由立方八面体转变为二十面体的相变;Co原子易于向低能态团簇的亚表层(111)面偏析,从而诱导团簇结构紊乱,造成其熔点差异.     

Cu-Co双金属团簇结构演化及其性质的分子动力学模拟

采用分子动力学结合嵌入原子方法对比研究了Co分布于Cu-Co团簇不同层的结构和性质. 研究表明：Co原子分层掺杂可对团簇的结构转变点和熔点进行诱导控制;分层掺杂的Cu-Co团簇第一相变是一种扩散度较小的由立方八面体转变为二十面体的相变;Co原子易于向低能态团簇的亚表层（111）面偏析, 从而诱导团簇结构紊乱, 造成其熔点差异.     

Effect of Bi-substitution on the dielectric properties of polycrystalline yttrium iron garnet

The effect of Bi-substitution on the dielectric properties of yttrium iron garnet (YIG) was studied in this paper. The Bi-substituted YIG (YIG:Bi) polycrystalline samples, having composition of Y_3−xBi_xFe₅O₁₂, were prepared by the solid-state reaction method. x varied from 0 to 1.2. The phase formation and microstructure were performed by X-ray diffraction and scanning electron microscopy, respectively. Ions valency was identified by X-ray photoelectron spectroscopy. The impedance analyzers are used to measure the frequency dependence and the temperature dependence of relative dielectric constant (_r) and loss tangent (tan δ). The experimental results show that the Bi-substitution lowers the phase formation and sintering temperature. Electronic carrier concentration drops dramatically due to limitation of ferric valency variation. Hence, _r and tan δ decrease with addition of Bi. Dispersion characteristic indicates non-Debye-type dispersion. A maximum of _r appears as the temperature rises.     

Epitaxial erbium silicide films on(100) silicon: growth, structure and electrical properties

Erbium silicide layers were grown epitaxially on (100) Si. Electron microscopy results showed that ErSi_2−x layers grow on (100) Si with hexagonal and tetragonal crystalline structures, depending on the method of deposition, the substrate temperature and their stoichiometry. Electrical resistivity measurements show that the two crystalline phases of ErSi_2−x are metallic and have slightly different electronic and magnetic properties.     

Compaction of nanodiamonds produced under detonation conditions and properties of composite and polycrystalline materials made on their basis

It is believed that materials based on ultrafine (nanoscale) diamond powders can possess high-level physical-mechanical and performance parameters characteristic of a nanocrystalline state. In certain cases, however, conventional methods for compacting ultrafine-dispersed diamonds (UDDs) fail and cannot be used to fabricate materials with desired properties. The difficulties associated with the ultrafine-dispersed state of the initial diamond powders can be surmounted by modifying the chemical and phase composition of the UDD surface. The possible use of UDDs as a catalyst that is conductive to the occurrence of chemical and phase transformations in certain substances at high pressures is analyzed. Sintering UDDs in the region of metastability of diamond makes it possible to produce porous polycrystalline aggregates with large specific surface area and very hard transparent particles.     

蒸发条件对碘化铅多晶薄膜结构的影响

采用真空蒸发法在普通玻璃上制备了PbI₂多晶薄膜.研究了蒸发速率、蒸发源与衬底距离、薄膜厚度以及衬底温度等实验条件对所制备PbI₂多晶薄膜结构的影响.利用X射线衍射仪和扫描电子显微镜对样品进行了测试.结果表明，在衬底温度为室温时得到(001)择优取向的多晶PbI₂薄膜，即沿c轴垂直衬底方向取向生长的薄膜.当衬底温度升高时，薄膜的择优取向逐渐由(001)转向(003)，且晶体颗粒变大.薄膜中的内应力随衬底温度的升高而降低.     

山东蒙阴金刚石多晶的显微红外光谱研究及其成因意义

山东蒙阴金刚石多晶可划分为多角刻面状和浑圆状金刚石多晶两大类,它们的显微红外光谱研究结果表明,金刚石多晶中的氮含量较低,介于16.69～72.81μg.g-1之间,且同一金刚石多晶的不同金刚石晶粒(或部位)中的氮含量不相同;刻面状金刚石多晶均为ⅠaAB型,且A心的浓度大于B心的浓度。浑圆状金刚石多晶也多为ⅠaAB型,但具有更高浓度的B心,且存在少数同时包含单替代氮、A心和B心的浑圆状金刚石多晶;金刚石多晶不是在金刚石颗粒的成核阶段所形成的,而是在金刚石长大期间或金刚石颗粒形成后的某个特殊条件下聚集而成;山东蒙阴金刚石多晶可能形成于氮浓度较低的较深部地幔。同时,多角刻面状金刚石多晶的形成时间稍晚于金刚石单晶体,浑圆状金刚石多晶的形成时间明显早于金刚石单晶体。     

Synthesis,crystal structure and electrical properties of (C5H13NCl)2 SnCl6

In this work, a novel compound Bis(2-chloropropyl-N,N-dimethyl-1-ammonium) hexachloridostannate(IV) was synthesized and characterized by; single X-ray diffraction, Hirshfeld surface analysis, differential scanning calorimetric and dielectric measurement. The crystal structure refinement at room temperature reveled that this later belongs to the monoclinic compound with P2₁/n space group with the following unit cell parameters a = 7.2894(7) Å, b = 12.9351(12) Å, c = 12.2302(13) Å and β = 93.423 (6) °. The structure consists of isolated (SnCl₆)^2? octahedral anions connected together into layers via hydrogen bonds N–H….Cl between the chlorine atoms of the anions and the hydrogen atoms of the NH groups of the [C₅H₁₃NCl]⁺ cations. Hirschfeld surface analysis has been performed to gain insight into the behavior of these interactions. The differential scanning calorimetry spectrum discloses phase transitions at 367 and 376.7 K. The electrical properties of this compound have been measured in the temperature range 300–420 K and the frequency range 209 Hz–5 MHz. The Cole–Cole (Z′ versus Z″) plots are well fitted to an equivalent circuit model. The transition phase observed in the calorimetric study is confirmed by the change as function of temperature of electrical parameter such as the conductivity of grain (σ_g) and the σ_dc.     

Effect of fabrication conditions on the properties of indium tin oxide powders

This paper reports that indium tin oxide （ITO） crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity c and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350℃ and Sn doping content 6～8wt% are determined. The application of ITO in the military camouflage field is proposed.     

固态二氧化碳电子结构及性能的理论研究

采用基于赝势平面波理论的第一性原理计算方法,研究了9种结构的固态二氧化碳的结构和性质.经过结构的几何优化,得到α石英稳定结构晶格常数与他人的计算值基本一致.通过对平衡态能量的分析,我们得出β方石英(cristobalite)结构是能量最低的结构.这与文献的研究结果一致.对弹性性质的计算结果表明,除了超石英(stishovite)和立方黄铁矿(cubic-pyrite)结构之外,其他的结构都是弹性稳定的.利用基于Mulliken轨道重叠布居数的共价固体本征硬度计算方法,预测了各个结构的本征硬度值.结果表明, 关键词： 第一性原理计算 固态二氧化碳 电子结构 硬度     

第一性原理对SinMg(n=1-12)团簇结构、稳定性与电子性质的研究

运用密度泛函理论(DFT)的杂化密度泛函B3LYP方法,在6-311G基组水平上对 团簇进行了构型优化、频率分析与电子性质计算.同时讨论了团簇的平均结合能、能级间隙、二阶能量差分、自然电子布居、极化率.研究结果表明： 团簇的基态绝大多数为立体结构. 时,体系的基态为自旋三重度, 时,则为单重态.镁原子的掺入使得主团簇的电子性质发生了明显的变化,掺杂使体系的平均结合能降低,能隙减小,化学硬度减小,电子亲和能增大.电子总是从 原子向 原子转移.团簇中原子之间的成键相互作用随n的增大 而增强,团簇的电子结构随n的增大而趋于紧凑.     

GaN(0001)表面电子结构和光学性质的第一性原理研究

采用基于第一性原理的密度泛函理论平面波超软赝势方法计算了(2×2)GaN(0001)清洁表面的能带结构、态密度、表面能、功函数和光学性质.发现弛豫后GaN(0001)表面的能带结构发生较大变化,表面呈现金属导电特性,导带底附近存在明显的表面态,在偶极矩的作用下表面电荷发生转移,Ga端面为正极性表面;计算获得了GaN(0001)表面的表面能和功函数分别为2.1J.m^-2和4.2eV;比较分析了GaN(0001)表面和体相GaN的光学性质,发现两者存在较大差异.     

First-principles investigations of the structure and physical properties for new TcN crystal structure

Using a newly developed particle swarm optimisation technique on crystal structural prediction, we have predicted an orthorhombic Imm2 structure for TcN crystal, which is energetically much superior to the previously proposed NbO-type and R-3m structures. The new phase is stable against decomposition into the mixture of Tc and N at ambient condition. The stability is confirmed by the subsequent calculations on the phonon dispersion curves and elastic constants. An analysis of the mechanical properties indicates that Imm2-TcN is incompressible and common hard material. The evidence of strong covalent bonding of Tc-N, which plays a leading role to form a hard material, is manifested by the partial densities of state analysis. In addition, the thermodynamic properties, such as Debye temperature, heat capacity, thermal expansion coefficient, and Grüneisen parameter of TcN are investigated by the quasi-harmonic Debye model.     

Theoretical investigation on the electronic structure,elastic properties, and intrinsic hardness of Si2N20

According to the density functional theory we systematically study the electronic structure, the mechanical prop- erties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli （bulk modulus, Young’s mod-ulus, and shear modulus） are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of β-Si3N4 and γ-Si3N4.     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

CaAl2X2(X=C,Si,Ge)的稳定性、电子结构和力学性质研究

由于AB2X2类型的材料在储能、催化、超导、发光等领域都有着潜在应用价值,因此得到了广泛关注。本文通过第一原理方法计算分析了CaAl2X2(X=C,Si,Ge)的材料声子谱、电子结构、力学性质和硬度,其主要结果为：材料晶格常数的计算结果和实验值都与理论结构符合的很好;CaAl2C2和CaAl2Si2材料的声子谱没有出现虚频,表明这两种材料在热力学及动力学上是稳定的;计算的材料的能带结构表明,CaAl2Si2和 CaAl2Ge2具有金属特性, CaAl2C2具有较小带隙的间接半导体材料。这类材料的金属特性,热稳定性及力学各项异性特征对于其作为二次电池活性电极有着重要影响,因此本文的研究结果可为相关领域的研究提供较好的理论依据及参考。     

B掺杂锐钛矿型(101)面的电子结构和光学性质研究

采用平面波超软赝势方法计算了B掺杂锐钛矿型TiO2(101)面的几何结构、缺陷形成能、电子结构和光学性质.分析B掺杂后的几何结构,发现氧化气氛下B易于掺杂间隙1处,还原气氛下易于替位掺杂O3C2.计算了掺杂前后的氧空位VO形成能和替位形成能,得出B掺杂和氧空位相互促进的结论.B掺杂在导带底引入了杂质能级,B的2p态和Ti的3d态发生强烈关联而使带隙变窄,发生红移现象.O空位也使带隙变窄,但未发现红移现象.B掺杂和O空位同时存在则使吸收光谱扩展至整个可见光区.     

B掺杂锐钛矿型(101)面的电子结构和光学性质研究

采用平面波超软赝势方法计算了B掺杂锐钛矿型TiO2(101)面的几何结构、缺陷形成能、电子结构和光学性质.分析B掺杂后的几何结构,发现氧化气氛下B易于掺杂间隙1处,还原气氛下易于替位掺杂O3C2.计算了掺杂前后的氧空位VO形成能和替位形成能,得出B掺杂和氧空位相互促进的结论.B掺杂在导带底引入了杂质能级,B的2p态和Ti的3d态发生强烈关联而使带隙变窄,发生红移现象.O空位也使带隙变窄,但未发现红移现象.B掺杂和O空位同时存在则使吸收光谱扩展至整个可见光区.