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A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V. 相似文献
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发射光谱法是对等离子进行在线诊断的常用方法。在丙酮/H2、丙酮/H2/He和丙酮/H2/Ar三种体系中,对热丝化学气相沉积金刚石薄膜过程中的等离子体进行了在线测量。研究了不同体积分数的惰性气体对等离子体中各活性基团强度的影响,以及CH,H与C2的相对强度的比值、电子温度的大小随惰性气体体积分数的变化关系。结果表明,各基团的强度随着惰性气体体积分数的增加呈现上升趋势,且加入同体积分数的氩气比加入氦气的影响更大;CH,H与C2的相对强度比值、电子温度随着惰性气体体积分数的增加而呈现下降趋势,且在丙酮/H2/Ar体系中要比丙酮/H2/He体系中小。 相似文献
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纳米金刚石膜具有高耐磨能力和低摩擦系数,在多个领域有广阔的应用前景。纳米金刚石膜可通过热丝化学气相沉积方法进行制备。其中,系统压力是关键的参数,适当的压力下可生长纳米金刚石膜,而改变压力则金刚石膜的表面形态将发生变化。实验通过不同压力下制备金刚石膜,采用扫描电镜进行形貌观察,并通过拉曼光谱确定纳米金刚石结构。实验表明,金刚石膜形态随压力变化而改变,一定压力下生长出纳米金刚石膜,降低压力则晶体颗粒变粗。分析其原因是与氢原子的运动密切相关。 相似文献
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The promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor
manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings,
etching of semiconductors, promotion of organic reactions, etching of polymers to improve bonding of the other materials etc.
With a 2.45 GHz. 700 W, microwave induced plasma chemical vapor deposition (CVD) system set up in our laboratory we have deposited
diamond like carbon coatings. The microwave plasma generation was effected using a wave guide single mode applicator. We have
deposited DLC coatings on the substrates like stainless steel, Cu-Be, Cu and Si. The deposited coatings have been characterized
by FTIR, Raman spectroscopy and ellipsometric techniques. The results show that we have achieved depositing ∼95% sp3 bonded carbon in the films. The films are unform with golden yellow color. The films are found to be excellent insulators.
The ellipsometric measurements of optical constant on silicon substrates indicate that the films are transparent above 900
nm. 相似文献
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Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell 下载免费PDF全文
A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15nm)/a-Si:H(10nm)/ epitaxial c-Si(47μm)/epitaxial c-Si(3μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer S d (Sd =PH3 /(PH3 +SiH4 +H2 )) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35mA/cm2 , a fill factor of 63.3%, and a conversion efficiency of 7.9%. 相似文献
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大面积均匀纳米金刚石薄膜制备研究 总被引:7,自引:0,他引:7
报道了一种利用偏压恒流等离子辅助热丝化学气相沉积城硅基板上制备大面积均匀纳米金刚石薄膜的新工艺,在不同沉积条件下研究了纳米金刚石薄膜的成核和生长过程,并通过扫描电镜、拉曼光谱和表面粗糙度测试仪观察了纳米金刚石薄膜的结构特征。最后成功制备了直径100mm、平均晶粒尺寸10nm的光滑纳米金刚石薄膜。 相似文献
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The effect of deposition temperature on the intermixing and microstructure of Fe/Ni thin film 下载免费PDF全文
The physical vapour deposition of Ni atoms on α-Fe(001) surface under different deposition temperatures were simulated by molecular dynamics to study the intermixing and microstructure of the interfacial region. The results indicate that Ni atoms hardly penetrate into Fe substrate while Fe atoms easily diffuse into Ni deposition layers. The thickness of the intermixing region is temperature-dependent, with high temperatures yielding larger thicknesses. The deposited layers are mainly composed of amorphous phase due to the abnormal deposition behaviour of Ni and Fe. In the deposited Ni-rich phase, the relatively stable metallic compound B2 structured FeNi is found under high deposition temperature conditions. 相似文献
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利用微波等离子体化学气相沉积(MPCVD)技术,采用偏压增加成核(BEN)、两步生长的方法在一氧化碳(CO)和氢气(H2)的环境下制备了金刚石薄膜. 利用扫描电子显微镜(SEM)、Raman光谱仪和透射电子显微镜(TEM)对金刚石薄膜的形貌和结构进行了分析. 研究发现金刚石晶粒在第一步成核及生长的过程中产生了层错和孪晶,而在第二步的生长过程中产生的层错和孪晶很少,最终形成的金刚石晶粒外表面比较光滑,包含有近五次对称或者平行的片状的孪晶,并可以观察到少量的位错. 而在样品的边缘由于等离子体的不均匀产生了比样品中心成核密度低的区域. 在这个区域中,发现了一个新的非金刚石的碳结构. 相似文献
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蓝色波段电致发光器件的研究是近年来光电子和材料科学研究领域最引入注目的研究课题之一。文章作者分别利用脉冲激光淀积设备和微波等离子体化学气相沉积设备制备了不同结构的高质量掺杂金刚石薄膜电致发光器件,并对其发光光谱特性,频率特性以及发光强度与杂质浓度及激发电压的依赖关系进行了研究,发现了金旬石薄膜紫外线的发光现象,取得了一系列有价值的结果。 相似文献
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Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film 下载免费PDF全文
By modifying the interchange interactions and the transverse fields on the epitaxy surface layer,this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green’s function technique based on the transverse Ising model with a four-spin interaction.The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green’s function.The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer.The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed. 相似文献
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实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明:所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。 相似文献
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采用热丝化学气相沉积技术制备了一系列处于不同生长阶段的薄膜样品,用原子力显微镜系 统地研究生长在单晶硅衬底和玻璃衬底上薄膜表面形貌的演化.按照分形理论分析得到:在 玻璃衬底上的硅薄膜以零扩散随机生长模式生长;而在单晶硅衬底上,薄膜早期以有限扩散 生长模式生长,当膜厚超过某一临界厚度时转变为零扩散随机生长模式.岛面密度与膜厚的 依赖关系表明,在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值.Raman谱的测 量证实,玻璃衬底上薄膜临界厚度与非晶/微晶相变之间存在密切的关系.不同的衬底材料直 接影响反应
关键词:
生长机制
微晶硅薄膜
表面形貌
热丝化学气相沉积 相似文献
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采用分子动力学方法模拟了碳在晶体硅基底上的沉积过程, 并分析计算了所沉积的类金刚石薄膜的面向及法向热导率. 对沉积过程的模拟表明, 薄膜密度及sp3杂化类型的碳原子所占比例均随沉积高度的增加而减小, 在碳原子以1 eV能量垂直入射的情况下, 在硅基底上沉积的薄膜密度约为2.8 g/cm3, sp3杂化类型的碳原子所占比例约为22%, 均低于碳在金刚石基底上沉积的情况. 采用Green-Kubo方法, 计算了所沉积类金刚石薄膜的热导率, 其面向热导率可以达到相同尺寸规则金刚石晶体的50%左右, 并且随着薄膜密度与sp3杂化类型碳原子所占比例的升高而升高. 相似文献