InSe的高压电输运性质研究

高压下对InSe样品进行原位电阻率和霍尔效应测量. 电阻率测量结果显示, 样品在5–6 GPa区间呈现金属特性, 在12 GPa 的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变, 且具有金属特性. 霍尔效应测量结果显示, 样品在6.6 GPa由p型半导体转变成n型半导体, 电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的. 关键词： InSe 高压 电阻率 霍尔效应     

Structural, electronic and optical properties of AgI under pressure

We report results of first-principles total-energy calculations for structural properties of the group I-VII silver iodide (AgI) semiconductor compound under pressure for B1 (rocksalt), B2 (cesium chloride), B3 (zinc-blende) and B4 (wurtzite) structures. Calculations have been performed using all-electron full-potential linearized augmented plane wave plus local orbitals FP-LAPW + lo method based on density-functional theory (DFT) and using generalised gradient approximation (GGA) for the purpose of exchange correlation energy functional. In agreement with experimental and earlier ab initio calculations, we find that the B3 phase is slightly lower in energy than the B4 phase, and it transforms to B1 structure at 4.19 GPa. Moreover, we found AgI has direct gap in B3 structure with a band gap of 1.378 eV and indirect band gap in B1 phase with a bandgap around 0.710 eV. We also present results of the effective masses for the electrons in the conduction band (CB) and the holes in the valence band (VB). To complete the fundamental characteristics of this compound we have analyzed their linear optical properties such as the dynamic dielectric function and energy loss function for a wide range of 0-25 eV.     

Electronic and optical properties of BAs under pressure

The electronic and optical properties of boron arsenide (BAs) in the zinc-blende (ZB) and rock-salt (RS) phases have been studied by the density functional theory (DFT) method based on the generalized gradient approximation (GGA). Using the enthalpy-pressure data, the structural phase transition from ZB to RS is observed at 141 GPa. Our calculated electronic properties show that ZB-BAs is a semiconductor, whereas RS-BAs is a semi-metal. Calculations of the dielectric function and absorption coefficient have been performed for the energy range 0-30 eV. The dependence of pressure on band structure and optical spectra is also investigated. The results are compared with available theoretical and experimental data.     

Raman scattering and Hall effect in layer InSe under pressure

Abstract

Experimental results of Raman scattering, Hall effect and conductivity measurements of ε-InSe crystals at 300K and pressures up to 10.2 kbar are presented. Changes of the shear force constants under pressure were analyzed using a linear-chain model. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space. Changes in the slopes of the Hall constant versus pressure and conductivity versus pressure dependence at about 3.5 kbar are explained by the existing representation of InSe as a direct band gap semiconductor.     

Structural and elastic properties of TiN under high pressure

We have investigated the structural and elastic properties of TiN at high pressures by the first-principles plane wave pseudopotential density functional theory method at applied pressures up to 45.4 GPa. The obtained normalized volume dependence of the resulting pressure is in excellent agreement with the experimental data investigated using synchrotron radial x-ray diffraction (RXRD) under nonhydrostatic compression up to 45.4 GPa in a diamond-anvil cell. Three independent elastic constants at zero pressure and high pressure are calculated. From the obtained elastic constants, the bulk modulus, Young's modulus, shear modulus, acoustic velocity and Debye temperature as a function of the applied pressure are also successfully obtained.     

Structural and electronic properties of hexagonal ain under pressure

Abstract

Electronic and ground state properties of wurtzite-structure AIN are evaluated in the local density approximation using norm-conserving non-local pseudopotentials. The resulting lattice constants are a = 3.136 Å and c = 4.990 Å. The calculated internal parameter u = 0.3825 deviates considerably from the “ideal” value u = 0.375. Also calculated are the electronic charge density, bulk modulus and its pressure derivative.     

二维InSe/SnSe2范德华异质结的电子结构和光学特性研究

本文构建了三种不同堆叠形式下的二维InSe/SnSe₂范德华异质结模型,利用基于密度泛函理论的第一性原理方法综合考察了二维InSe/SnSe₂三种不同堆叠情况下的几何构型及稳定性,在此基础上选取具有最稳定性能的构型.该异质结呈现出Ⅱ型能带对齐特征,带隙值为1.118 eV,可以实现电子-空穴的有效分离.另外,相比与单层二维InSe/SnSe₂范德华异质结的光吸收能力达到明显提升,在紫外光范围内吸收系数达到10~6 cm^-1.研究结果将为相关物理实验及机理研究提供理论基础,对二维InSe/SnSe₂范德华异质结在光电器件中的应用具有重要的物理意义.     

Structural stabilities, electronic, elastic and optical properties of SrTe under pressure: A first-principles study

The structural, electronic, elastic and optical properties as well as phase transition under pressure of SrTe have been systematically investigated by first-principles pesudopotential calculations. Five possible phases of SrTe have been considered. Our results show that SrTe undergoes a phase transition from NaCl-type (B1) to CsCl-type (B2) structure at 10.9 GPa with a volume collapse of 9.43%, and no further transition is found. We find that SrTe prefer h-MgO instead of wurtzite (B4) structure for its metastable phase because that the ionic compound prefers a high coordination. The elastic moduli, energy band structures, real and imaginary parts of the dielectric functions have been calculated for all considered phases, and we find that a smaller energy gap yields a larger high-frequency dielectric constant. Our calculated results are discussed and compared with the available experimental and theoretical data.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为,得出 AlN在16.7Gpa附近存在等结构相变,即由直接带隙结构转变为间接带隙结构。同时,结合高压下的态密度分布图和能级移动情况,分析了AlN在高压下的光学性质,吸收谱有向高能端移动(蓝移) 的趋势。     

高压下ZnSe的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同的压强下ZnSe晶体闪锌矿结构,得到了它的平衡晶格常数、总能量、电子态密度分布、能带结构、光反射与吸收系数等性质,详细讨论了高压下ZnSe的电子结构,并且结合实验结果定性地分析了高压下的光学性质. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

Electronic and optical properties of CdTe under hydrostatic pressure effect

We have determined the pressure dependence of the direct bandgap, ionicity, transverse effective charge and refractive index for CdTe. The study is performed using the sp³s ^* semi-empirical tight-binding method with the scaling law and Murnaghan`s equation of state. All these properties were found to have a sublinearity behaviour with the pressure. The results are compared with other works.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为,得出 AlN在16.7Gpa附近存在等结构相变,即由直接带隙结构转变为间接带隙结构。同时,结合高压下的态密度分布图和能级移动情况,分析了AlN在高压下的光学性质,吸收谱有向高能端移动(蓝移) 的趋势。     

Electronic and optical properties of distorted rare-earth manganite under hydrostatic pressure

The effect of hydrostatic pressure on the crystal structure, electronic and optical properties of distorted rare-earth manganite TbMnO₃ has been studied on the basis of first-principle calculations. The results reveal that the band gaps reduce quadratically with increasing pressure. The optical properties of TbMnO₃ predict that the peaks in the dielectric function shift to higher photon energy due to the transformation of inner electronic states with increasing pressure. Otherwise, the peaks in the reflectivity spectra and loss function were also found to move to higher photon energy with pressure increasing and the relationships between the positions of these peaks and pressure can be fitted by third order polynomial expressions.     

Electronic and optical properties of the zinc-blende structured LiZnN under pressure

The electronic and optical properties of the cubic zinc-blende (ZB) structured filled tetrahedral semiconductor α-LiZnN under pressure are investigated by using \textit{ab initio} plane wave pseudopotential density functional theory method within the generalized gradient approximation (GGA). The electronic band structure and the density of state under pressure are systematically described. The basic optical constants, including the reflection and absorption spectra, the energy-loss function, the complex refractive index and the dielectric function, are calculated and analysed at different external pressures. Our results suggested that the ZB α-LiZnN is transparent in the partially ultra-violet to the visible light region, and it seems that the transparency is hardly affected by the pressure.     

Electronic and optical properties under pressure effect of alkali metal oxides

We report results of first-principles calculations for the electronic and optical properties under pressure effect of Li₂O, Na₂O, Ki₂O and Rb₂O compounds in the cubic antifluorite structure, using a full relativistic version of the full-potential augmented plane-wave plus local orbitals (FP-APW+lo) method based on density functional theory, within the local density approximation (LDA) and the generalized gradient approximation (GGA). Moreover, the alternative form of GGA proposed by Engel and Vosko (GGA-EV) is also used for band structure calculations. The calculated equilibrium lattices and bulk moduli are in good agreement with the available data. Band structure, density of states, and pressure coefficients of the fundamental energy gap are given. The critical point structure of the frequency dependent complex dielectric function is also calculated and analyzed to identify the optical transitions. The pressure dependence of the static optical dielectric constant is also investigated.     

Structural, electronic and optical properties of high pressure stable phases of ZnTe

We have performed full potential linear augmented plane wave calculations to investigate the pressure induced phase transition in ZnTe. Total energies of three phases (zinc-blende, cinnabar and Cmcm) are calculated using density functional theory formalism under generalized gradient approximation and Engel-Vosko generalized gradient approximation for the exchange correlation potential approximation. The pressure stability corresponding to zinc-blende, cinnabar and Cmcm phases of ZnTe are computed. We find that cinnabar phase could be formed as a metastable phase by releasing pressure from the high pressure Cmcm phase. The obtained structural, electronic and optical results are compared with previous calculations and available experimental data. Overall good agreement is found.     

Structural, electronic and vibrational properties of InN under high pressure

The structural, electronic and vibrational properties of InN under pressures up to 20 GPa have been investigated using the pseudo-potential plane wave method (PP-PW). The generalized-gradient approximation (GGA) in the frame of density functional theory (DFT) approach has been adopted. It is found that the transition from wurtzite (B4) to rocksalt (B1) phase occurs at a pressure of approximately 12.7 GPa. In addition, a change from a direct to an indirect band gap is observed. The mechanism of these changes is discussed. The phonon frequencies and densities of states (DOS) are derived using the linear response approach and density functional perturbation theory (DFPT). The properties of phonons are described by the harmonic approximation method. Our results show that phonons play an important role in the mechanism of phase transition and in the instability of B4 (wurtzite) just before the pressure of transition. At zero pressure our data agree well with recently reported experimental results.