Surface characterization and growth mechanism of laminated Ti3SiC2 crystals fabricated by hot isostatic pressing

Laminated Ti₃SiC₂ crystals were prepared by hot isostatic pressing from Ti, Si, C and Al powders with NaCl additive in argon at 1350 °C. The morphology and microstructure of Ti₃SiC₂ crystals were investigated by means of XRD, SEM, and TEM. The high symmetry and crystalline was revealed by high resolution transmission electronic microscope (HRTEM) and selected area electron diffraction (SAED). The growth mechanism of Ti₃SiC₂ crystals controlled by two-dimensional nucleation was put forward. The growth pattern of layered steps implies that the growth of the (0 0 2) face should undergo two steps, the intermittent two-dimensional nucleation and the continuous lateral spreading of layers on growth faces.