Pressure-induced amorphization of Gd2(MoO4)3: A high pressure Raman investigation

High pressure Raman spectroscopic studies on Gd₂(MoO₄)₃(GMO) have been carried out at ambient temperature in the diamond cell to 10 GPa hydrostatic pressure. These experiments have revealed pressure-induced phase transitions in GMO near 2 GPa and 6.0 GPa. The first transition is from Pba2(β′) phase to another undetermined crystalline phase, designated as phase II, and the second transition is to an amorphized state. On releasing pressure there is a partial reversion to the crystalline state. The Raman data indicate that the amorphization is due to disordering of the MoO₄ tetrahedral units. Further, it is inferred from the nature of the Raman bands in the amorphized material that the Mo-O bond lengths and bond angles have a range of values, instead of a few set values. The results of the present study as well as previous high pressure-high temperature quenching experiments strongly support that pressure-induced amorphization in GMO is a consequence of the kinetically impededβ toα phase transition. The system in frustration becomes disordered. The rare earth trimolybdates crystallizing in theβ′ structure are all expected to undergo similar pressure-induced amorphization.     

Raman study of thaumasite Ca3Si(OH)6(SO4)(CO3)⋅12H2O at high pressure

Thaumasite, Ca₃Si(OH)₆(SO₄)(CO₃)⋅12H₂O, is an extraordinary mineral that possibly plays a special role in the carbonate–sulfate–silicate balance of the Earth's crust. Thaumasite, an undesirable component in concrete, remains a material poorly studied at high pressures in various media except for He medium (M. Ardit et al., Mineral. Mag., 2014). In the present Raman study, thaumasite samples were compressed in alcohol–water and KBr media at high pressures up to ~7 GPa: several phase transformations were identified. In samples compressed in alcohol–water, the wavenumbers of intense Raman bands of S O and С О symmetric stretching vibrations at 991 and 1074 cm⁻¹ proved to exhibit similar dependences on pressure: during a first transition I → II at 4.4 GPa, the wavenumbers of both bands exhibited a downward jump; at a second transition II → III, which occurred at 4.9 GPa, each band split in a doublet; and then, at a third transition III → IV, which was observed at 5.4 GPa, each doublet band transformed in a singlet. In KBr medium, these and other Raman bands of thaumasite showed similar (to those in thaumasite at compression in alcohol–water) dependences on pressure, revealing several phase transitions with slightly shifted transition points, the first transition I → II, however, being not distinguished. Taking into account the similar behaviors in both media, the transitions are assumed to be polymorphic: no noticeable overhydration in thaumasite compressed in water–alcohol occurred. In phase IV, gradual widening and weakening of each band were observed; those changes can be attributed to amorphization of the material. Considerable hysteresis was observed at thaumasite decompression. Copyright © 2016 John Wiley & Sons, Ltd.     

硼硫协同掺杂金刚石的高压合成与电学性能研究

FeNiMnCo-C体系中,在压力6.5 GPa、温度1280—1300℃的极端物理条件下,采用温度梯度法成功合成了硼(B)、硫(S)协同掺杂金刚石大单晶.通过傅里叶红外光谱测试对高温高压所制备金刚石中的杂质进行了表征.借助霍尔效应对典型金刚石样品的电输运性能进行了测试,测试结果表明:硼硫协同掺杂有利于提高p型金刚石的电导率,而且硼硫在合成体系中的添加比例可以决定金刚石的p, n特性.此外,第一性原理计算结果表明,合成体系中不同比例的硼硫协同掺杂对金刚石的p, n特性以及电导率有着直接的影响,计算结果与实验测试结果相吻合.     

An ab initio study of filled skutterudites ROs4P12 (R = Sm,Eu and Gd)

The elastic, electronic, magnetic and optical properties of filled skutterudite ROs₄P₁₂ (R = Sm, Eu and Gd) have been studied by first principles calculation. The full-potential linearized augmented plane wave method based on density functional theory was employed. For the exchange-correlation potential, local spin density approximation + Coulomb repulsion (LSDA + U) is used to treat the f-electrons more effectively. The numerical values of the elastic parameters are estimated in the framework of the Voigt–Reuss–Hill approximation. OsP-based filled skutterudite with localized 4f and 5d-electrons shows dense energy bands near Fermi energy originating from rare earth and Os atoms. The dense density of states near E_F reveals that these compounds are suitable for thermoelectric application. Optical constants including dielectric function, optical reflectivity and refractive index are calculated for photon energy radiation up to 12 eV. The exchange-splitting of R-4f states were analyzed to explain the ferromagnetic behavior of ROs₄P₁₂.     

Magnetic properties of the compounds R2Sc3Si4 (R=Gd, Tb, Dy, Ho, Er)

The magnetization of R₂Sc₃Si₄ compounds is measured in static magnetic fields up to 14 kOe in the temperature range 77–300 K. It is established that all compounds in the given series are paramagnetic at these temperatures. The paramagnetic Curie points are determined, and the effective magnetic moments are calculated. The measurements are performed on polycrystalline samples. Fiz. Tverd. Tela (St. Petersburg) 41, 1804–1805 (October 1999)     

Dielectric relaxation and ac conduction in multiferroic Bi0.8Gd0.1Pb0.1Fe0.9Ti0.1O3 ceramics: impedance spectroscopy analysis

ABSTRACT

The solid solutions of Bi_0.8Gd_0.1Pb_0.1Fe_0.9Ti_0.1O₃ have been prepared by the solid-state reaction method. The preliminary structural studies were carried out by X-ray diffraction technique showing the formation of polycrystalline sample with ABO₃ type of perovskite structure with hexagonal symmetry for the Bi_0.8Gd_0.1Pb_0.1Fe_0.9Ti_0.1O₃ ceramic system at room temperature. Dielectric properties and impedance study of this ceramic have been characterized in the temperature range room temperature to 375 °C and frequency range 100 Hz–1 MHz. The maximum ferroelectric transition temperature (T_c) of this system was in the range 200 °C–260 °C with the dielectric constant of peak to be ～30,170 at 1 kHz. The complex impedance plot exhibited one impedance semicircle observed at low temperature, whereas two semicircles above 80 °C and the centres of the semicircles lie below the real axis, which indicates that the material is non-Debye type. Single semicircle is explained by the grain effect of the bulk and double semicircle is due to the bulk and grain boundary effect. The bulk resistance and grain boundary resistance of the materials decrease with the increasing temperature, showing negative temperature and a typical semiconducting property, i.e. negative temperature coefficient of resistance behaviour.     

Synthesis of Ge-Sn at high pressure and high temperature in a laser-heated diamond anvil cell

Ge–Sn compound is predicted to be a direct band gap semiconductor with a tunable band gap. However, the bulk synthesis of this material by conventional methods at ambient pressure is unsuccessful due to the poor solubility of Sn in Ge. We report the successful synthesis of Ge–Sn in a laser-heated diamond anvil cell (LHDAC) at ~7.6 GPa &; ~2000 K. In situ Raman spectroscopy of the sample showed, apart from the characteristic Raman modes of Ge TO (Г) and β-Sn TO (Г), two additional Raman modes at ~225 cm^?1 (named Ge–Sn₁) and ~133 cm^?1 (named Ge–Sn₂). When the sample was quenched, the Ge–Sn₁ mode remained stable at ~215 cm^?1, whereas the Ge–Sn₂ mode had diminished in intensity. Comparing the Ge–Sn Raman mode at ~225 cm^?1 with the one observed in thin film studies, we interpret that the observed phonon mode may be formed due to Sn-rich Ge–Sn system. The additional Raman mode seen at ~133 cm^?1 suggested the formation of low symmetry phase under high P–T conditions. The results are compared with Ge–Si binary system.     

三维超分子化合物(C12N2H8)的合成、晶体结构与荧光性质

合成了一个三维超分子化合物(C₂₀O₂H₁₄)(C₁₂N₂H₈)(命名为BP1),通过元素分析、红外光谱、核磁共振氢谱和X射线单晶衍射对其结构进行了表征,结果表明分子之间通过氢键和π-π堆积弱的相互作用形成超分子化合物。对所有合成的超分子化合物进行了紫外光谱和荧光光谱的测试。在室温DMSO溶液中,当激发波长为342nm时,化合物在373nm处有一强发射峰,呈现紫色荧光,这可以归属于分子内的π^*→π跃迁。X射线单晶衍射分析结果表明,该超分子化合物属于三斜晶系,P1空间群,晶胞参数a=1.0878(2)nm,b=1.1252(2)nm,c=1.1680(2)nm,α=97.89(3)°,β=110.91(3)°,γ=109.62(3)°,V=1.2032(4)nm³,Z=2,R₁=0.0531,wR₂=0.1634,GOF值为1.034。     

Synthesis and characterization of Gd(OH)3 nanobundles

Gd(OH)₃ nanobundles, which consisted of bundle-like nanorods, have been prepared through a simple and facile hydrothermal method. The crystal, purity, morphology and structural features of Gd(OH)₃ nanobundles are investigated by powder X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and energy dispersive X-ray (EDX). A possible formation mechanism of Gd(OH)₃ nanobundles is briefly discussed.     

Effect of pressure on the electrical resistivity and thermoelectric power of the compounds Ba(Pb1-xBi x )O3 and K y Ba1-yPb0.5Cu0.5O3-x

High pressure studies on the electrical resistivity and thermoelectric power of BaPb_1-xBi _x O₃ and K _y Ba_1-yPb_0.5Cu_0.5O_3-x show that many compounds in these systems exhibit qualitatively the same type of behaviour as observed in the superconducting oxides (La, Sr)CuO₄ and YBa₂Cu₃O_7-x. The compounds K _y Ba_1-yPb_0.5Cu_0.5O_3-x show temperature-independent resistivity over a wide range of temperatures, but are not found to be superconducting down to 77 K.     

Dielectric and infrared properties of SrTiO3 single crystal doped by 3d （V,Mn, Fe,Ni） and 4f （Nd,Sm, Er） ions

In this study, the effects of doping by 3d （V, Mn, Fe, Ni） and 4f （Nd, Sm, Er） ions on dielectric and infrared properties of SrTiO3 （STO） single crystals are investigated. It is well known that doping of the SrTiO3 can change the dielectric properties of the STO from an insulator to an n-type semiconductor, and even to a metallic conductor. Dielectric and infrared （IR） properties of the undoped STO and doped STO single crystals are analyzed using dielectric spectroscopy （80 kHz-5 MHz）, transmission （200 cm^-1-4000 cm^-1）, and reflection spectroscopy （50 cm^-1-2000 cm^-1）. It is found that doping by the 3d ions reduces the value of dielectric permittivity, but the trend of temperature dependence of the dielectric permittivity remains almost unchanged. On the other hand, dielectric spectroscopy measurements for samples doped by 4f ions show the anomalous behaviors of the dielectric permittivity at temperatures around the temperature of the structural phase transition. There are two fractures of temperature dependences of inverse dielectric permittivity εr^-1 （T）. Transmittance spectroscopy measurements show that there are differences in the shape of the spectrum in the mid-IR region between the undoped STO and the one doped by 4f ions. The differences in the reflectance spectrum between the STO：Nd and STO are analyzed in detail.     

A study of the magnetic susceptibility of R3Au3Sb4 (R = Tb,Ho, Er,Tm)

The magnetic susceptibilities of the new cubic intermetallic compounds R₃Au₃Sb₄ (R = Tb, Ho, Er, and Tm) have been measured between 4 and 300 K. The compounds are paramagnetic down to 4 K. The experimental effective magnetic moment of the erbium compound is in agreement with the free-ion value, whereas the effective moments of the other three compounds are lower than the corresponding free-ion values. This discrepancy is interpreted in terms of quenching by the crystalline electric field.     

Synthesis,structure and luminescence properties of a series of dinuclear LnIII complexes (Ln=Gd,Tb, Dy,Ho, Er)

The reactions of lanthanide nitrates with a Schiff-base ligand HL (2-[(2-hydroxypropylimino)methyl] phenol) have produced five new complexes with formula as [Ln₂(L)₃(NO₃)₃]CH₃OH(Ln=Gd 1, Tb 2, Dy 3, Ho 4, Er 5). These new complexes are characterized by elemental analysis, IR and X-ray diffraction, as well as fluorescence spectra. Single-crystal X-ray diffraction analysis reveals that all the complexes crystallize in the trigonal system, space group R-3. Fluorescence spectroscopy of Tb(III) and Dy(III) complexes display strong characteristic metal-centered fluorescence in solid state, which demonstrates that luminescence is sensitized by the effective energy-transfer from ligand to the metals. The fluorescence lifetimes of complex 2 and 3 are also determined.     

Mn_2[V_(12)B_(16)O_(52)(OH)_6](en)_2(H_3O)_6(H_2O)_5(en=ethylenediamine)的结构及谱学研究

采用水热合成法合成了一种结构新颖的多硼钒氧簇化合物Mn2[V12B16O52(OH)6](en)2(H3O)6(H2O)5(en=ethylenediamine)1,通过单晶X射线衍射确定该化合物的结构。化合物1中,在ab平面上,簇单元之间通过[Mn(H2O)2]2+连接成二维层状结构,另外,层与层之间在c方向上通过氢键连接成三维空间结构。此外,对化合物1的谱学性质进行了红外光谱、磁和热微扰下的二维红外相关光谱、紫外-可见固体漫反射光谱分析,探讨了其结构与谱学性质的关系。磁微扰的二维红外相关光谱表明B—O,V—O—V和Mn—O—B的伸缩振动对于磁场的变化比较敏感,热微扰的二维红外相关光谱表明B—OH,B—O,V—O—V和Mn—O—B的伸缩振动对热微扰比较敏感。     

高压下RhB的相变、弹性性质、电子结构及硬度的第一性原理计算

采用密度泛函理论中的赝势平面波方法系统地研究了高压下RhB的结构相变、弹性性质、电子结构和硬度.分析表明,RhB在25.3 GPa时从anti-NiAs结构相变到FeB结构,这两种结构的弹性常数、体弹模量、剪切模量、杨氏模量和弹性各向异性因子的外压力效应明显.电子态密度的计算结果显示,这两种结构是金属性的,且费米能级附近的峰随着压强的增大向两侧移动,赝能隙变宽,轨道杂化增强,共价性增强,非局域化更加明显.此外,硬度计算结果显示,anti-NiAs-RhB的金属性比较弱,有着较高的硬度,属于硬质材料.     

Synthesis,crystal structure and dielectric properties of C6H18N2SbCl5

The result of the X‐ray diffraction, differential scanning calorimetry and dielectric studies on a new crystal material C₆H₁₈N₂SbCl₅ is presented. The new organic–inorganic compound has been synthesized and characterized by the X‐ray diffraction method at 296(2) K. It crystallizes in the monoclinic P21/n space group. The cell dimensions are: a = 5.8617(1) Å, b = 15.7069(2) Å, c = 16.6693(2) Å, β = 97.627(1)° and Z = 4. The crystal structure consists of a discrete ionic layer of (C₆H₁₈N₂)²⁺ cations and [SbCl₅]^2? anions linked via simple and bifurcated N―H · · · Cl hydrogen bonds. DSC analysis shows that this compound undergoes a phase transition at about (384 ± 2) K. AC and DC conductivities, complex dielectric permittivity ε*(ω) and complex electrical modulus M*(ω) were respectively studied as temperature and frequency functions. The combined data support each other and confirm the existence of a structural phase transition at about 384 K. Moreover, the temperature dependence of the DC conductivity and relaxation frequency followed the Arrhenius relation. The frequency dependence of the real part of the AC conductivity in both phases follows the Jonscher's universal dynamic law: . The behavior of s(T) with temperature suggests that the hopping over barrier model (CBH) and the small polaron tunneling mechanism (SPTM) prevail in phases I and II, respectively. Copyright © 2016 John Wiley & Sons, Ltd.     

High‐pressure polarized Raman spectra of Gd2(MoO4)3: phase transitions and amorphization

Polarized Raman spectra of a single crystal of gadolinium molybdate [Gd₂(MoO₄)₃] were obtained between 1 atm and 7 GPa. Using a mixture of alcohols as the pressure‐transmitting medium, YY, ZZ, XY components of scattering matrices were measured. The ZZ spectra were also obtained in argon. Five phase transitions and amorphization were identified. The first and second transitions are reversible, while amorphization is not. In alcohol, amorphization is observed above 6.5 GPa. With argon as the pressure‐transmitting medium, amorphization is progressive and begins above 3 GPa. The spectral changes with pressure affect the high wavenumber bands attributed to symmetric and antisymmetric MoO₄ stretching modes as well as the very low wavenumber modes such as librations of the tetrahedra. This means that both short‐range and long‐range organizations of the tetrahedra are involved in these phase transitions. The amorphization mechanism and its dependence on the pressure‐transmitting medium are discussed, and the steric hindrance between polyhedra is believed to be the most relevant mechanism. The TO and LO low wavenumber modes of A₁ symmetry, observed in the Y(ZZ)Y and Z(YY)Z geometries, respectively, below 50 cm⁻¹, soften continuously through the first three phases when increasing pressure. The strong A₂ mode observed in the Z(XY)Z spectra exhibits the same anomalous behavior by decreasing from 53 to 46 cm⁻¹ at 2 GPa. The softening of these modes is related to the orientation change of tetrahedra observed by ab initio calculations when the volume of the cell is decreased. These orientation changes can explain the wavenumber decrease of the Mo O stretching modes above 2 GPa, which indicates an increase of Mo coordination. Copyright © 2010 John Wiley & Sons, Ltd.     

Vibrational properties of Cs4W11O35 and Rb4W11O35 systems: high pressure and polarized Raman spectra

Cs₄ W₁₁O₃₅ (CW) and Rb₄ W₁₁O₃₅ (RW) belong to the class of hexagonal bronzes whose structure originates from the K_xWO₃ superconductor hexatungstate. Charge‐imbalanced tungsten bronzes are dielectric materials with rich polymorphism, ferroelectric properties and second‐harmonic generation. In this work, we report the polarized Raman spectra results for both CW and RW, as well as results of high‐pressure Raman scattering experiments (0.0–11.0 GPa) for the Cs₄ W₁₁O₃₅ system, in which we have observed two structural phase transitions at ∼4 and 7.5 GPa. We discuss these transformations and polarized Raman spectra on the basis of lattice dynamics calculation in the related system KNbW₂O₉. Polarized Raman spectra provide strong indication that the highest wavenumber modes observed in these systems originate from tungsten or oxygen vacancies. The observation of a soft‐like mode indicates that the observed phase transitions exhibit a displacive‐type behavior, thus further indicating that these transformations are likely related to reorientations of the octahedral units. The soft mode nature is discussed as well. PACS: 77.80.Bh; 78.30.Hv; 78.30.‐j. Copyright © 2010 John Wiley & Sons, Ltd.     

Synthesis of N-type semiconductor diamonds with sulfur,boron co-doping in FeNiMnCo-C system at high pressure and high temperature

A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth(TGG) under high pressure and high temperature(HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra(XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 ?·cm and 760.870 cm~2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10~5 ?·cm and 76.300 cm~2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.