Pressure effects on the thermodynamic and mechanical properties of zinc-blende ZnTe compound

In this paper, the moment method in statistical mechanics has been employed to study the pressure effects on thermodynamic and mechanical properties of zinc-blende zinc telluride using many-body potential. We have derived the analytical expressions of the pressure-dependent lattice parameter, volume compression as well as mean-square displacement of zinc-blende type compound. Numerical calculations performed for ZnTe compound up to 12 GPa are found to be in good and reasonable agreement with available experimental data as well as with previous theoretical studies. These results have been used to evaluate the bulk modulus and its first pressure derivative of ZnTe. The present moment method has taken into account the quantum zero-point vibrations at low temperature and the higher-order anharmonic terms in the atomic displacements. This research shows the advantage of moment method on extensively studying thermo-mechanical properties of materials under high pressures.     

Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals

We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 \(\upmu \)m of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals.     

Pressure effects in Debye-Waller factors and in EXAFS

Anharmonic correlated Einstein model (ACEM) and statistical moment method (SMM) have been developed to derive analytical expressions for pressure dependence of the lattice bond length, effective spring constant, correlated Einstein frequency and temperature, Debye-Waller factors (DWF) or second cumulant, first and third cumulants in Extended X-ray Absorption Fine Structure (EXAFS) at a given temperature. Numerical results for pressure-dependent DWF of Kr and Cu agree well with experiment and other theoretical values. Simulated EXAFS of Cu and its Fourier transform magnitude using our calculated pressure-induced change in the 1st shell are found to be in a reasonable agreement with those using X-ray diffraction (XRD) experimental results.     

Some features of surface formation during brittle failure of covalent crystals with diamond-type lattice according to EPR data

The dependence was found of the intensity of “mechanical paramagnetic centres” EPR signals on the temperature of grinding of diamond, silicon carbide, silicon and germanium crystals. Signals intensity increase with grinding temperature lowering (up to 77 K) is related with formation of the materials' amorphous phase during their brittle failure as well as with specific features of the microcracks structure development.     

半导体中浅杂质的傅里叶变换光热电离光谱

本文报道与快扫描傅里叶变换红外光谱仪相结合的光热电离光谱实验装置和测量系统。采用该系统高分辨率、高灵敏度地研究和测量高纯锗和高纯硅中的剩余浅杂质获得成功。在P型超纯Ge中发现浓度低达10⁸cm^-3的硼受主杂质的光热电离谱线,而探测灵敏度则至少可达10⁷cm^-3;在n型高纯Si中观测到Li-O复合型浅施主中心D(Li,O);施加本征激发光后在P型高纯Si中同时观察到B受主和P施主的跃迁谱线系。此外,在Si,Ge中均观察到 关键词：     

The mechanism of Landau-Rumer relaxation of thermal and high-frequency phonons in cubic crystals of germanium,silicon, and diamond

Transverse phonon relaxation according to the Landau-Rumer mechanism is considered for an isotropic medium and crystals of germanium, silicon, and diamond possessing a cubic symmetry. The energy of elastic deformation caused by the anharmonicity of vibrations of the cubic crystal lattice is expressed via the second-and third-order moduli of elasticity. Using the known values of these elastic moduli, parameters determining the frequencies of the transverse phonon relaxation in the Landau-Rumer mechanism are evaluated for the germanium, silicon, and diamond crystals. It is shown that the dependence of the relaxation frequency on the wavevector of thermal and high-frequency phonons sharply differs from the classical Landau-Rumer relationship both in the isotropic medium and in the cubic crystals. It is established that the observed peculiarities in the relaxation frequency are related to the angular dependence of the probability of anharmonic scattering and the anisotropy of elastic properties of the germanium, silicon, and diamond crystals. A new method is proposed for the experimental determination of the relaxation frequency of high-frequency phonons as a function of the wavevector using the temperature dependence of the coefficient of absorption of high-frequency ultrasound.     

Temperature-pressure phase diagram of silicon determined by Clapeyron equation

The temperature-pressure phase diagram [T-P] for silicon (Si) is predicted through the Clapeyron equation where the pressure-dependent volume difference is modeled and the corresponding thermodynamic amount of solid transition enthalpy is calculated by introducing the effect of surface stress induced pressure. The model prediction is found to be consistent with the present experimental results and other theoretical predictions.     

Effects of electronically neutral impurities on muonium in germanium

Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium.     

The temperature variation of the scattering properties of crystals

It is shown how thermodynamic data (heat capacity, thermal expansion, etc.) may be used to estimate accurately certain scattering properties of crystals, assuming the validity of the quasi-harmonic approximation of lattice dynamics. In particular, Debye-Waller factors and incoherent neutron scattering cross sections can be readily correlated with thermodynamic data even though the form of the lattice frequency distribution of the crystal is not known. Thermodynamic data for vanadium, silicon, germanium and copper have been analysed and the results used to illustrate the accurate estimation of the following entities: Debye-Waller factor, total incoherent neutron scattering cross section, differential incoherent neutron cross section in the weak-binding approximation and in the n-phonon approximation. The application of the method to Mössbauer effect phenomena is also discussed. Definite criteria are suggested for deciding the conditions under which the substitution of the Debye distribution for the actual frequency distribution of a crystal leads to acceptable estimates of one or more properties of the lattice vibrations.     

In-beam implantation of iron into germanium,silicon and diamond studied by the Mössbauer effect

The Mössbauer effect of⁵⁷Fe implanted into diamond structure semiconductors, Ge, Si and C, has been studied by in-beam implantation of⁵⁷Fe ions, which were excited to the 14 keV state by a³⁵Cl beam from a tandem Van de Graaff accelerator. The time between the stopping of the⁵⁷Fe nucleus and the emission of the 14 keV -ray is determined by the lifetime (140 ns) of the 14 keV state. In each material the Mössbauer spectrum exhibits a doublet with velocity coordinates (in mm/s) at room temperature, relative to a sodium ferrocyanide absorber, as follows: diamond (–0.99, 1.10), silicon (–0.80, 0.21), and germanium (–0.88, –0.02). In silicon and germanium crystals the spectra were observed over the temperature range between 13 K and 870 K. The relative line intensities changed dramatically and the positions of the lines shifted systematically with temperature. In addition, channelling studies were made on iron that had been implanted into silicon.     

非晶硅锗电池性能的调控研究

采用射频等离子体增强化学气相沉积技术, 研究了非晶硅锗薄膜太阳电池. 针对非晶硅锗薄膜材料的本身特性, 通过调控硅锗合金中硅锗的比例, 实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制. 借助于本征层硅锗材料帯隙梯度的设计, 获得了可有效用于多结叠层电池中的非晶硅锗电池. 关键词： 非晶硅锗薄膜太阳电池 短路电流密度 开路电压 带隙梯度     

Removal of pyramidal germanium nanoislands from the silicon (001) surface as a result of deposition/sputtering of a gold nanolayer

Optimal conditions for selective removal of pyramidal germanium nanoislands from the silicon (001) surface by sequential ion-beam deposition/sputtering of a gold layer with a nanoscale thickness are determined experimentally; it is important that the sizes of large domelike germanium nanoislands change only slightly as a result of the ion-beam treatment.     

Anisotropy of the mean free paths of phonons in single-crystal films of germanium,silicon, and diamond at low temperatures

The physical aspects of the influence of the elastic energy anisotropy of crystals on the anisotropy of the mean free paths of phonons in single-crystal films of germanium, silicon, and diamond in the diffuse scattering of phonons at the boundaries of the samples have been considered. It has been shown that, for sufficiently wide films of germanium, silicon, and diamond with the {100} and {111} orientations and the lengths of less than or equal to their width, the phonon mean free paths are isotropic (independent of the direction of the temperature gradient in the plane of the film). The anisotropy of the phonon mean free paths depends primarily on the orientation of the film plane and is determined by the focusing and defocusing of phonon modes. For single-crystal films of germanium, silicon, and diamond with the {100} and {111} orientations and lengths much larger than their width, the phonon mean free paths are anisotropic.     

Doping density striation effects in studies of the metal-nonmetal transition in heavily doped semiconductors

Significant oscillatory doping density inhomogeneities - striations - are reportedly a commonplace phenomenon in germanium and silicon crystals. Schottky barrier tunneling data on heavily doped and irradiation compensated silicon are presented which are consistent with the presence of such striations. The need for considering striations in studies of the metal-nonmetal transition is emphasized.     

硅、锗中氧的低温红外吸收

在6—300K下,利用红外傅里叶光谱仪研究了400—4000cm^-1间的硅、锗中氧的红外吸收。采用高分辨条件时,分辨率可达0.5cm^-1。研究了在低温下利用硅的1106cm^-1吸收峰和锗的855cm^-1吸收峰探测硅和锗氧含量的探测限和误差。若样品厚度为2cm,估计在20K下,硅中氧含量探测限～9.6×10¹⁴氧原子·cm^-3,锗中氧含量探测限～3.0×10¹⁴氧原子·cm^-3。同时,对不同生长条件下直拉锗单晶的氧含量进行了研究,并与用锂沉淀法所求得的锗中氧含量加以比较。对不同氧含量的硅样品的1106cm^-1吸收峰在6—300K的变化进行了观察和讨论。 关键词：     

Structure,microhardness, and strength of a directionally crystallized Al-Ge alloy

The structure, microhardness, and strength of binary directionally crystallized aluminum alloys with 35, 43, 53, 57, and 64 wt % germanium have been investigated. It has been shown that the eutectic microhardness is constant in the composition region under study. The microstrength of primary crystals of the solid solution of germanium in aluminum with the dendrite structure increases with increasing germanium concentration. However, the difference in the microhardnesses of the eutectic and dendrites, which was determined for each of compositions on the same specimen, does not exceed the measurement error. It has been assumed that the change in the strength of the alloy having the composition in the hypoeutectic region is determined by the redistribution of the volume fractions of the eutectic (α-Al and eutectic germanium) and the domains of primary crystals of the solid solution. This dependence can be described by the mixture rule. Above the eutectic composition, the alloy decomposes in a brittle manner; its strength is likely dependent not only on the content of the components, but also on the form and orientation of primary germanium crystals.     

Electronic properties of hydrogen-related complexes in pure semiconductors

Hydrogen has been shown to activate the neutral impurities carbon, silicon and oxygen in ultra-pure germanium and form shallow level complexes. The double acceptors beryllium and zinc in silicon and germanium, as well as the triple acceptor copper in germanium, can be partially passivated, leading to single hole acceptors. The study of the electronic level spectrum of the single carrier bound to these centers at low temperatures has provided much information on symmetry and composition. Most centers reveal a symmetry axis along [1 1 1] and are static. In some cases hydrogen has been found to tunnel between equivalent real space positions. hoto hermal onization pectroscopy (PTIS) has been the most important tool for the study of the optical transitions of the hole (electron) in these hydrogen containing complexes. This photoconductivity technique combines high sensitivity with high resolution and permits the study of shallow acceptors or donors present at concentrations as low as 10⁸ cm^-3. Even lower limits may be attained under favorable circumstances.     

Konzentration und Beweglichkeit von Elektronen in Zinkoxidkristallen mit Indium-Dotierung

The electrical conductivity and Hall effect of zinc oxide single crystals doped with indium has been measured from 5 to 300 K. Similar results to other semiconductors such as silicon and germanium are found. The temperature dependence of the measured quantities was discussed in terms of impurity band conduction and hopping conductivity.     

Two-dimensional photonic crystals with pure germanium-on-insulator

We have investigated pure germanium two-dimensional photonic crystals. The photonic crystals which exhibit resonances in the near infrared spectral range were fabricated on germanium-on-insulator substrates using standard silicon-based processing. The germanium-on-insulator substrate consists of a thin layer of pure germanium-on-oxide deposited on a silicon substrate. The optical properties are probed by the direct band gap optical recombination of pure germanium at room temperature. Resonant optical modes are evidenced between 1.68 and 1.53 μm in different type of hexagonal cavities (H1-H5). The spectral position of the modes is controlled by the lattice periodicity and air filling factor of the photonic crystals. Close to the Ge band edge, the quality factors are limited by the bulk material absorption.     

液体-液体相变与反常特性

绝大多数物质的液态密度随温度降低而增大,即常见的热胀冷缩现象.但存在一类物质,如水及第四主族的硅、锗等,其液态密度在一定温度范围内随温度的升高而增大,即密度反常现象.此外,该类物质还存在动力学反常(密度越大粒子运动越快)、热力学反常(热力学量的涨落随温度降低而升高)等其他反常特性.这类材料的化学性质千差万别,但却具有相似的物理反常特性.进一步的理论研究发现部分材料具有两种液态,即高密度液态和低密度液态,两者之间存在一级相变.因此,反常特性与液体-液体相变是否有直接关联是一个值得深入研究的课题.本文主要介绍了具有液体-液体相变的一类材料及其反常特性,包括高温高压下氢的液体-液体相变及其超临界现象,镓的反常特性及其与液体-液体相变的关联等.