A diamond anvil cell for the study of fluid mixtures at high temperatures

Abstract

A new diamond anvil cell has been developed to study the phase behavior of fluid mixtures at high temperature. Special care has been taken to achieve good temperature stability and small temperature gradients. Preliminar experiments show that the cell performs well.     

Photoluminescence spectra of ultradisperse diamond

The first study of materials based on ultradisperse diamond produced by detonation is reported. A luminescence band in the visible has been observed, and some of its structural features have been interpreted by analogy with the known luminescence bands of centers in synthetic and natural diamonds. A comparison of the spectra obtained from ultradisperse diamond samples with the surface modified by different chemical treatments suggests that their pattern is governed to a considerable extent by the presence of a graphitic layer on the grain surface. Fiz. Tverd. Tela (St. Petersburg) 39, 2156–2158 (December 1997)     

Data-driven exploration for pressure-induced superconductors using diamond anvil cell with boron-doped diamond electrodes and undoped diamond insulating layer

ABSTRACT

Data-driven exploration for pressure-induced superconductors was performed based on the high-throughput first-principles screening of electronic band structures. In the screening conditions, we focused on the characteristics including a narrow band gap, flat band feature, and possibility of metallization under high pressure. The 27 promising compounds were screened out from the database of Atomwork for the candidates of new pressure-induced superconductors. Among the candidates, we actually synthesized three compounds in a single crystal, and all candidates exhibited the pressure-induced superconductivity. For the in-situ electrical transport measurements, we developed a novel configuration of diamond anvil cell with boron-doped diamond electrodes and an undoped diamond insulating layer. The discovered new pressure-induced superconductors via the data-driven approach and the developed diamond anvil cell were summarized in this paper.     

Methodology for in situ synchrotron X-ray studies in the laser-heated diamond anvil cell

ABSTRACT

A review of some important technical challenges related to in situ diamond anvil cell laser heating experimentation at synchrotron X-ray sources is presented. The problem of potential chemical reactions between the sample and the pressure medium or the carbon from the diamond anvils is illustrated in the case of elemental tantalum. Preliminary results of a comparison between reflective and refractive optics for high temperature measurements in the laser-heated diamond anvil cell are briefly discussed. Finally, the importance of the size and relative alignment of X-ray and laser beams for quantitative X-ray measurements is presented.     

Single crystal x-ray diffraction with a synchrotron source in a mdac at low temperature

Abstract

A new diamond anvil cell and a helium flow cryostat have been developed for x-ray diffraction on single crystals at low temperatures and high pressures using the white radiation of a synchrotron beam. This novel instrument especially enables continuous change of sample temperature and pressure without any adjustment of alignment. A minimum temperature of 46 K has been reached.

Presented at the IUCr Workshop on ‘Synchrotron Radiation Instrumentation for High Pressure Crystallography’, Daresbury Laboratory 20-21 July 1991     

The membrane diamond anvil cell

Abstract

A new design for a diamond anvil cell is described. Its main characteristic is that the force on the piston is generated by pressurized helium. Two of its main qualities are illustrated on recent measurements.     

FEM simulations and experimental studies of the temperature field in a large diamond crystal growth cell

We investigate the temperature field variation in the growth region of a diamond crystal in a sealed cell during the whole process of crystal growth by using the temperature gradient method (TGM) at high pressure and high temperature (HPHT). We employ both the finite element method (FEM) and in situ experiments. Simulation results show that the temperature in the center area of the growth cell continues to decrease during the process of large diamond crystal growth. These results are in good agreement with our experimental data, which demonstrates that the finite element model can successfully predict the temperature field variations in the growth cell. The FEM simulation will be useful to grow larger high-quality diamond crystal by using the TGM. Furthermore, this method will be helpful in designing better cells and improving the growth process of gem-quality diamond crystal.     

Peculiarities of phase transitions when synthesizing diamond in high pressure apparatus of various types

Abstract

The influence of P, T-parmeters and duration of heat when synthesizing diamond in high pressure apparatus both of recessed anvil-type and cylindrical type (belt-type) on properties of diamond powders was studied. The dependence of pressure in reaction cells on temperature of force elements of apparatus in initial state and on efficiency of high pressure production in a reaction cell before heating was shown.     

Comparison of the Raman pressure shift and the Raman temperature shift of benzene and diamond with the ruby soale

Abstract

In order to serve as substitute for the pressure ruby scale at high temperature, the breathing mode of bemsens (990 cm^?1) and the first order Raman mode of diamond (1333 cm^?1) have been studied as a function of pressure and temperature in the range of 0–15 GPa and 25–400°C. The diamond and bensene Raman frequency shifts are shoft to be of valuable use as a pressure scale at high temperature. A further advantage of bensene is to remain a suitable pressure transmitting medium up to 350°C and 15 GP.     

Miniature cryogenic diamond anvil cell

Abstract

The miniature cryogenic diamond anvil described previously [D.J. Dunstan and W. Scherrer, Rev. Sci. Instrum. 59, 627 (1988)] has been modified to facilitate its use, and has been taken to 26GPa. The modifications are described here, together with some details of operation.     

Growth of diamond thin film on tool materials from a gas phase

Abstract

In the present paper, diamond films have been synthesized on tungsten carbide, sintered diamond and high pressure diamond by hot filament chemical vapour deposition method from the mixture gas of methane and hydrogen, and growth features of diamond were studied.     

Characterization of a growth-front interface in a HPHT-grown diamond crystal by transmission electron microscopy

The growth-front interface of a diamond single crystal, which was grown from the Fe-Ni-C system under high pressure and high temperature (HPHT), has been directly observed by transmission electron microscopy (TEM) for the first time. The presence of a cellular interface suggests that the diamond is grown from solution and there exists a narrow supercooling zone in front of the solid–liquid interface. Diamond-growth parallel layers were also found, which indicates that the diamond grows from solution layer by layer. It provides direct evidence that the diamond is synthesized through graphite dissolution and transformation to subcritical diamond particles in a molten catalyst, diamond subcritical particle connection to form diamond clusters, diffusion of the diamond clusters to the growing diamond, and unification of the diamond clusters on the growing diamond crystal. Received: 17 July 2000 / Accepted: 27 October 2000 / Published online: 10 January 2001     

Novel techniques for the prepartion of synthetic diamond

Abstract

The objectives of this work are two fold: (1) to study the effect of using oxygen-acetylene flame grown synthetic diamond as seed crystals for the high pressure-high temperature conversion of graphite into diamond and (2) to demonstrate the ability to produce small crystallites of diamond by a simple, electron beam evaporation technique. In each case, the production of diamond from graphite was confirmed.     

Graphitization of a diamond surface upon high-dose ion bombardment

Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρ_m of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar⁺ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρ_m = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.     

Ion-implanted buried layer in diamond as a source of ballistic phonons at liquid-helium temperatures

It is shown that an approximately 150 nm thick ion-implanted buried layer in diamond and excited by a pulsed laser at wavelength λ=337 nm is a source of nonequilibrium acoustic phonons propagating ballistically through the diamond sample at temperatures ∼2 K. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 4, 270–272 (25 August 1996)     

Ab initio modelling of band states in doped diamond

Presented in this study is an analysis of the electronic properties of doped diamond calculated using the Vienna ab initio simulation package, employing density functional theory within the generalized-gradient approximation. The dopants studied here have been inserted substitutionally into a 64-atom diamond supercell and include the single-electron acceptors boron and aluminium, the single-electron donors nitrogen and phosphorus and the double-electron donors oxygen and sulphur. Co-doping of diamond with sulphur and boron has also been briefly examined. The doped supercells have been relaxed, followed by calculation of electronic properties from the electronic density of states such as the indirect bandgap E _g, the valence bandwidth and an examination of the acceptor and donor states in the bandgap. It is anticipated that this study will provide a useful comparison of the third- and fourth-row donors and acceptors in diamond.     

Method of low-temperature optical measurements with diamond anvil cells

Abstract

Constructions of a cryogenic diamond anvil system with mechanical clamping press and helium pressure medium for microscopic optical studies are described. Low temperature nonmagnetic cells ø40 and ø20 mm have been developed. GaP samples doped with S, Te and isoelectronic impurities N, NN have been investigated up to 20 GPa at 1.5-300K.     

Growth and field emission properties of globe-like diamond microcrystalline-aggregate

The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti mental layer was used as substrate. The fabricated diamond was evaluated by Raman scattering spectroscopy, X-ray diffraction spectrum (XRD), and scanning electron microscope (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates exhibited good electron emission properties. The turn-on field was only 0.55 V/μm, and emission current density as high as 11 mA/cm² was obtained under an applied field of 2.9 V/μm for the first operation. The growth mechanism and field emission properties of the globe-like diamond microcrystalline-aggregates are discussed relating to microstructure and electrical conductivity.     

Bulk diamond formation from graphite in the presence of C-O-H fluid under high pressure

Abstract

C-O-H fluids have been successfully applied as catalysts for bulk diamond formation under high pressure. New insight into C-O-H fluids extends the understanding of the origin of natural diamond, which is presently of interest in materials and geological sciences. This review presents current literature data concerning the synthesis and characterization of bulk diamond formation assisted by C-O-H fluids at high pressure and high temperature. Based on a general survey of this subject, the pressure-temperature regime for diamonds formed in these fluids was established and the mechanism of conversion from graphite to diamond is discussed. Finally, a few questions are put forward that may be useful for the continued development of this research area.     

合成金刚石与合成体系之关系

 通过各种材料的试验和压机设备因素的测定，总结了金刚石生长过程的特性：金刚石晶体是在石墨（G）-触媒（Me）界面上生长；因电阻R_(G)>R_(Me)、温度T_(G)>T_(Me)以及与外界热交换等原因，使合成腔内产生压力、温度梯度，成为金刚石生长之驱动力。梯度过大过小对金刚石生长均不利；金刚石晶体在G-Me界面两侧是非对称性生长；每个晶粒表面有一特殊结构约20 μm左右厚的金属薄膜，它起到运载碳源和催化的双重作用。要合成粗粒高强金刚石，需要有一个稳定的合成体系。本文分析了该体系状态的性质及稳定的必要性与稳定的具体方法。