Fabrication of diamond nanorods for gas sensing applications

Diamond nanorods were fabricated for a sensing device by utilizing reactive ion etching in CF₄/O₂ radio frequency plasma. The length of the nanorods has been controlled by the ion etching time. The obtained morphologies were investigated by scanning electron microscopy. The gas sensing properties of the H-terminated diamond-based sensor structures are indicating that we have achieved high sensitivity to detect phosgene gas. Also, our sensor exhibited good selectivity between humid air and phosgene gas if the measurement is conducted at elevated temperatures, such as 140 °C. Furthermore, such sensor response rating could reach as high value as 4344 for the phosgene gas, which was evaluated for the sample consisting of the longest nanorods (up to 200 nm).     

Optical and electrical properties of different oriented CVD diamond films

Due to different oriented diamond films having different properties, in this paper optical and electrical properties of different oriented diamond films have been investigated. The measured results indicate diamond films are of high quality and the properties of the (0 0 1)-oriented diamond film are better than those of the (1 1 1)-oriented one. Refractive index and extinction coefficient of (0 0 1)-oriented diamond film in the wavelength range of 2.5-12.5 μm is 2.391 and in the order of 10⁻⁵, respectively. And for the (1 1 1)-oriented one it is 2.375 and in the order of 10⁻⁴. The dark current of the (0 0 1)-oriented diamond film is 33.7 nA under an applied electric field of 100 kV/cm. The resistivity of the (0 0 1)-oriented diamond film obtained is about 2.33 × 10¹⁰ Ω cm. The current of (0 0 1)-oriented diamond film is almost no change with the time testing.     

Investigation of the thermal conductivity of diamond film on aluminum nitride ceramic

Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot-filament chemical vapor deposition (HFCVD) method. The thermal conductivity of the diamond film/aluminum nitride ceramic (DF/AlN) composites was studied by photothermal deflection (PTD) technique. It has reached 2.04 W/cm K, 73% greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy (SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses were also studied. The unusual stability and very good adhesion of the diamond film on AlN ceramic substrate obtained is attributed to the formation of aluminum carbide. Received: 24 March 1998 / Accepted: 8 March 1999 / Published online: 5 May 1999     

Characterization of soft-X-ray detectors fabricated with high-quality CVD diamond thin films

We have characterized the performance of soft-X-ray detectors fabricated with undoped and B-doped homoepitaxial diamond layers of high quality which were grown on a commercially available type Ib (1 0 0) substrate by means of a high-power microwave-plasma chemical-vapor-deposition (CVD) method. The signal currents of the diamond-based detectors with thin TiN electrodes formed vertically (along the homoepitaxial growth direction) were measured at room temperature as a function of the applied voltage, V_a, for irradiations of 500-1200 eV soft-X-ray beams ranging from ≈6 × 10⁹ to ≈1 × 10¹¹ photons/s. The deduced apparent quantum efficiencies increased with the increasing V_a and reached to 2.5 × 10³ at V_a = 60 V. As expected from the device structure, the detector performance depended only very slightly on the applied magnetic field up to 10 T. The excellently high sensitivities attained for soft-X-ray photons are discussed in relation to carrier amplification mechanisms which invested the above diamond detectors.     

Hydrogen incorporation in ultrananocrystalline diamond/amorphous carbon films

The incorporation of hydrogen within ultrananocrystalline diamond/amorphous carbon composite films has been investigated by nuclear reaction analysis (NRA) and Fourier transform infrared spectroscopy (FTIR). The film bulk contains ca. 7.5–8% H (for a deposition temperature of 600 °C), while the H concentration in the surface region is considerably higher. FTIR measurements show that the hydrogen‐rich surface is formed right at the beginning of the deposition process and grows outward as the film thickness increases. It can thus be concluded that surface hydrogen species play an active role in the formation of ultrananocrystalline diamond/amorphous carbon films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The approach to diamond growth on levitating seed particles

We demonstrate the approach of diamond growth on levitating seed particles in a rf plasma. We introduce a hot filament chemical vapor deposition (CVD) technique into the rf plasma chamber in order to obtain improved crystal growth. Firstly, we confirmed diamond nucleation on seed particles placed on a Si substrate using the hot filament CVD. The deposition conditions, namely the total pressure and the rf power, were chosen so that they correspond to particles levitation conditions. We observe that a hydrogen pre-treatment on the seed particles improves the nucleation. Secondly, we confirm the levitation of particles at high temperatures. Fine particles levitated in a plasma are particularly sensitive to thermophoretic effects due to inhomogeneities in the gas heating. Therefore, proper heating procedures are required for successful particles levitation.     

Real-time monitoring of diamond nucleation and growth using field-enhanced thermionic emission current

Diamond nucleation and growth in the combustion-flame method were monitored in real time using thermionic emission current from the deposited diamond films. It was observed that the emission current evolved over three periods, the incubation, the fast increase, and the saturation periods. Ball-shaped diamond particles, faceted diamond crystals, and diamond films with well-faceted crystals were formed in the three periods. The current from a diamond-seeded substrate started to increase immediately without an incubation period, confirming that the current is from the diamond. Therefore, the current could be used for real-time monitoring of the diamond nucleation and growth.     

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

Silicon nitride (SiN_X) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH₄, H₂ and N₂ in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N₂ in place of NH₃, a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.     

Enhanced diamond nucleation on copper substrates by graphite seeding and CO2 laser irradiation

Diamond nucleation on copper (Cu) substrates was investigated by graphite seeding and CO₂ laser irradiation at initial stages of the combustion-flame deposition. A graphite aerosol spray was used to generate a thin layer of graphite powders (less than 1 μm) on Cu substrates. The graphite-seeded Cu substrates were then heated by a continuous CO₂ laser to about 750 °C within 1 min. It was found that diamond nucleation density after this treatment was more than three times as much as that on the virgin Cu substrates. As a consequence, diamond films up to 4 μm were obtained in 5 min. The enhancement of diamond nucleation on the graphite-seeded Cu substrates was attributed to the formation of defects and edges during the etching of the seeding graphite layers by the OH radicals in the flame. The defects and edges served as nucleation sites for diamond formation. The function of the CO₂ laser was to rapidly heat the deposition areas to create a favorable temperature for diamond nucleation and growth.     

Ultra‐thin nanocrystalline diamond films (<100 nm) with high electrical resistivity

Thick diamond films are known to exhibit remarkably high electrical resistivity and thermal conductivity. However, on thin films, difficulties are often observed to achieve such performances. In this study, the synthesis of ultra‐thin diamond films was optimized towards the possibility to maintain high dielectric performances on layers compatible with today requirements for Silicon‐On‐Diamond technology, and namely aiming at films with thicknesses equal or below 150 nm. The nucleation of diamond nanocrystals is crucial to obtain films with thickness lower than 100 nm. A Bias Enhanced Nucleation step (BEN) was improved to achieve nucleation densities above 10¹¹ cm^–2 although the process was also tuned to limit the size of the nanocrystals during this step. The control of the carbonization of the silicon substrate is also essential to reach such a density with a high reproducibility. The BEN is followed by a growth step with optimized conditions. The films were characterized by SEM and Spectroscopic Ellipsometry. Electrical conductivity measurements were conducted on thin diamond films and values obtained on layers below 100 nm were as high as 5 × 10¹³ Ω cm; a value significantly higher than the state of the art for such thin films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Simulation of polycrystalline 3D film growth: An investigation of the evolution of grain size and texture in diamond films

An analytical method for simulating gas phase film growth has been developed and used to study the growth of diamond films during prolonged deposition, i.e. the film thickness is much larger than the lateral grain size. From a model system composed of 10⁴ grains, reliable results can be evaluated for the growth of diamond films by (111) and (001) deposition under different initial conditions and with varying growth parameters. It is demonstrated that the rate of structure evolution is sensitively influenced by the aspect ratio of diamond crystal. A near-linear proportionality between the average grain size and the thickness of films can be approximately yielded for a large film thickness which is about 10 times of the average distance of the nuclei. The proportionality constant varies for a statistical nucleation from 0.0056 to 0.43 by changing the aspect ratio. Furthermore, the orientational distribution is drastically narrowed down so that the probability of coalescence of grains with a slight orientational difference is considerably increased. Received: 28 September 2000 / Accepted: 19 February 2001 / Published online: 3 May 2001     

Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction （XRD） patterns indicate that the deposited films are highly textured （111） orientation. The surface morphology and roughness are determined by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm （AFM 5×5 μm images）. Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems （MEMS） devices such as SiC based filters.     

Three-Step Growth Optimization of AlN Epilayers by MOCVD

A three-step growth process is developed for depositing high-quality aluminium-nitride （AlN） epilayers on （001） sapphire by low pressure metalorganic chemical vapour deposition （LP-MOCVD）. We adopt a low temperature （LT） A1N nucleation layer （NL）, and two high temperature （HT） A1N layers with different V/Ⅲ ratios. Our results reveal that the optimal NL temperature is 840-880℃, and there exists a proper growth switching from low to high V/Ⅲ ratio for further reducing threading dislocations （TDs）. The screw-type TD density of the optimized AIN film is just 7.86×10^6 cm^-2, about three orders lower than its edge-type one of 2×10^9 cm^-2 estimated by high-resolution x-ray diffraction （HRXRD） and cross-sectional transmission electron microscopy （TEM）.     

Characterization of phosphorus-doped homoepitaxial (1 0 0) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamber

Phosphorus-doped n-type homoepitaxial diamond films have been successfully grown at high substrate temperatures (>1000 °C) on high-pressure/high-temperature-synthesized type-Ib single-crystalline diamond (1 0 0) substrates, by using a conventional microwave plasma chemical-vapor-deposition (CVD) system with high power densities. The deposition system employed in this work had an easily exchangeable 36 mm inner-diameter quartz-tube growth chamber. The homoepitaxial diamond films thus grown were characterized by means of Hall-effect measurements with an AC magnetic field, atomic force microscope observations and secondary ion mass spectrometry techniques. The dependences of the substrate temperature (≤1300 °C) and the P/C ratio in the source gas (≤9900 ppm) on the specimen features were investigated. The optimum substrate temperature deduced was ≈1160 °C, which was also applicable to the CVD growth of undoped homoepitaxial diamond layers. The n-type conductions with an activation energy ≈0.6 eV were observed for the specimens with amounts of the P atoms incorporated to ≈1.5 × 10¹⁸ cm⁻³ whereas the doping efficiencies changed from ≈0.06% to ≈0.92% with the growth condition. Possible origins for these results are discussed in relation to the growth mechanism.     

Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes II: Nido-2,3-diethyl-2,3-dicarbahexaborane

Boron-carbon thin films have been successfully deposited on Si (111) from the synchrotron radiation induced decomposition of the nido-2,3-diethyl-dicarbahexaborane, (CH₃CH₂)₂C₂B₄H₆. There are indications that molecular precursor states to complete dissociation exist, and that dissociation is the rate limiting step. As with deposition of boron from decaborane, there is an activation barrier to dissociation of diethylcarborane on Si (111). The composition of the growing film, as determined by the boron to carbon ratio, is strongly dependent upon the boron concentration at the surface of the substrate. The boron concentration of the film increases with increasing film thickness.Part one appeared in [1]     

Diamond Structure BeO, Designable Super-Hard Materials and Semiconductor Be-Diamond

It is possible for Beryllium oxide （BeO） to have a cubic diamond structure although it normally has a hexagonal structure under ambient conditions. As the solution of cubic BN and diamond, the solid solution of cubic BeO- diamond or BeO-cBN-diamond can potentially be a kind of super-hard materials with designable hardness; and this solution has also been confirmed based on our preliminary first principles calculations. In addition, the nonstoichiometry of BeO could create a mobile carrier in the cubic BeO-C or BeO BN-C system and it might lead to a new type of semiconductor Be-diamond.     

Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature

Hydrogenated amorphous SiC thin films deposited at low substrate temperature (100 °C) show the different bonding configurations and microstructures which depend on the carbon concentrations in the films controlled by the gas ratio R of methane to silane during the deposition. Photoluminescence characteristics are investigated for these samples with different structures. A strong luminescence in red light region can be observed for samples deposited with low gas ratio R which is significantly reduced its intensity with increasing the carbon concentrations in the films. On the other hand, the luminescence bands located at blue-green light region are detected under UV light excitation for samples deposited with high gas ratio R, which can be associated with the existence of amorphous SiC clusters in the films.     

Size effect in optical spectra of microcrystalline diamond powders and CVD films

Received: 24 March 1997/Accepted: 27 May 1997     

Leakage current study of Si1−xCx embedded source/drain junctions

This work investigates the impact of various processing parameters on the leakage current of in situ P-doped Si_1−xC_x embedded source/drain (S/D) junctions, i.e., the carbon content x (%) and the thermal budget used either before or after the selective epitaxial deposition. It is shown that while the area leakage current density, generated by defects in the depletion region is not affected by the epitaxial process or the strain in the substrate, the perimeter leakage current density (J_P) increases with x. From the stronger reverse bias dependence of J_P, it is derived that a higher electric field exists along the junction periphery. This is confirmed by capacitance-voltage (C-V) measurements, demonstrating a higher p-well B doping density for increasing x. It is believed that this originates from the strain dependence of the B diffusivity in the p-well region. No evidence of electrically active extended defect formation was found, so it is expected that the off-state current of embedded Si_1−xC_x S/D nMOSFETs will not be adversely affected by the selective epitaxial deposition.