The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1 − xAlxAs double quantum well under the external fields

The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in GaAs/Ga_0.7Al_0.3As double quantum well in the presence of the electric and magnetic fields which are applied along the growth direction have been studied by using a variational technique within the effective-mass approximation. The results show that an increment in temperature results in a decrement in donor impurity binding energy while an increment in the pressure for the same temperature enhances the binding energy and the pressure effects on donor binding energy are lower than those due to the magnetic field.     

Energy spectrum of excitations in quasi-one-dimensional conductors with a charge-density wave

A well-formed energy gap Δ is observed in the energy spectrum of the quasi-one-dimensional orthorhombic conductor TaS₃ at temperatures much lower than the Peierls transition temperature T _P . As the temperature increases, in the region T>T _P /2 there is a growth of the density of states in the gap and a relative decrease of the density at energies greater than Δ. In addition, absorption lines which probably correspond to soliton states in a charge-density wave are observed in the gap. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 4, 246–250 (25 February 1996)     

Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well

The ground state and a few excited state energies of a hydrogenic donor in a quantum well are computed in the presence of pressure and temperature. The binding energies are worked out for GaAs/ Ga_1−xAl_xAs structures as a function of well size when the pressure and temperature are applied simultaneously. A variational approach within the effective mass approximation is considered. The results show that for a constant applied pressure, an increase in temperature results in a decrease in donor impurity binding energy while an increase in the pressure for the same temperature enhances the binding energy. When the pressure and temperature are applied simultaneously the binding energy decreases as the well width increases. In all the cases, it is observed that there is an increase in the binding energy due to the decrease in the quantum well size and in the dielectric constant whereas the effects of temperature on the effective mass are minimal.     

Light hole transport in a strained GaAs/In0.18Ga0.82As quantum well at high pressures

Abstract

Here we report what we believe to be the first observation of the pressure dependence of the light hole behavior in a modulation doped In_0.18Ga_0.82As/GaAs single strained quantum well grown by MBE. Transport measurements have been undertaken as a function of temperature (4–300K) and hydrostatic pressure (4–8kbar). Hole mobilities of ～17000 cm²/Vs have been obtained for sheet carrier densities of ～3.3×10¹¹ cm^?2. At low temperatures (<100K) persistent photogenerated holes have been observed. The hole mobility is found to decrease with increasing pressure at a rate intermediate between that typically observed for holes and electrons in bulk III-V semiconductors.     

Simultaneous effects of temperature and pressure on the donor binding energy in a V-groove quantum wire

The influence of temperature and pressure, simultaneously, on the binding energy of a hydrogenic donor impurity in a ridge GaAs/Ga_1−xAl_xAs quantum wire is studied using a variational procedure within the effective mass approximation. The subband energy and the binding energy of the donor impurity in its ground state as a function of the wire bend width and impurity location at different temperatures and pressures are calculated. The results show that, when the temperature increases, the donor binding energy decreases for a constant applied pressure for all wire bend widths. Also, the binding energy increases by increasing the pressure for a constant temperature for all wire bend widths. In addition, when the temperature and pressure are applied simultaneously the binding energy decreases as the quantum wire bend width increases. On the whole, it is deduced that the temperature and pressure have important effects on the donor binding energy in a V-groove quantum wire.     

Physical adsorption of gases at high pressure

The adsorption of a (modified) Lennard-Jones gas on a plane, rigid solid surface is studied using the grand canonical ensemble Monte Carlo method for a wide range of physical conditions. The shapes of the adsorption isotherms are in good qualitative agreement with those observed experimentally. Multilayers adsorption is observed at temperatures from just below to well above the critical temperature, T_c . As the pressure is increased for T?T_c the adsorbed film tends to become thick in the sense that the outer adsorbed layer becomes highly deloealized and asymmetric.     

Features of magnetic phase transitions in iron-manganese arsenides of the type Fe a−x MnxAs (a≈1.6)

This paper discusses how temperature/pressure processing affects the cascade of magnetic phase transitions in the alloy Fe_0.5Mn_1.1As with a C38 tetragonal crystal lattice. It shows that after various temperature/pressure treatment regimes (quenching of the sample from 800 °C under pressures of 30–60 kbar) no transition to the low-temperature phase is observed, as a result of which the ferrimagnetic phase extends to liquid-nitrogen temperatures. These results are analyzed on the basis of a qualitative model that takes into account the competition of ferromagnetic and antiferromagnetic interactions within and between nonequivalent crystallographic subsystems. Fiz. Tverd. Tela (St. Petersburg) 39, 889–893 (May 1997)     

Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

Abstract

We have investigated the resonant tunnelling of electrons through X-valley related states in a single AlAs barrier with Si donor & doping. Under high hydrostatic pressure all the peaks observed in the differential conductance-voltage (σ-V) characteristics shift with a pressure rate of -lSmeV/kbar, which is expected for X-minima related electronic states.     

The high hydrostatic pressure effect on shallow donor binding energies in GaAs-(Ga, Al)As cylindrical quantum well wires at selected temperatures

We have presented the behavior of a shallow donor impurity with binding energy in cylindrical-shaped GaAs/Ga_0.7Al_0.3As quantum well wires under high hydrostatic pressure values. Our results are obtained in the effective mass approximation using the variational procedures. In our calculations, we have not considered the pressure related Γ−X crossover effects. The hydrostatic pressure dependence on the expectation value of ground state binding energy is calculated as a function of wire radius at selected temperatures. We have also discussed the effects of high hydrostatic pressure and temperature on some physical parameters such as effective mass, dielectric constant, and barrier height. A detailed analysis of these calculations has proved that the effective mass is the most important parameter, which explains the dependency of donor impurity binding energies on the high hydrostatic pressure values.     

Effect of pressure on the electrical resistivity and magnetism in updsn

The electrical resistivity of a UPdSn single crystal exerted to various hydrostatic pressures was measured as a function of temperature and magnetic field. Clear anomalies in the temperature dependence of resistivity along the c-axis mark the magnetic phase transitions between paramagnetic and antiferromagnetic (AF) state at T _N and the AF1?AF2 transition at T ₁. Large negative magnetoresistance effects have been observed not only in the AF state as a result of the metamagnetic transition to canted structure at B _c , but also at temperatures far above T _N . The latter result is attributed to the existence of AF correlations or short range AF orderings in the paramagnetic range. The value of T _N increases with increasing applied pressure, whereas T ₁ simultaneously decreases. It is also found that B _c decreases with increasing pressure. As a consequence, the stability range of the AF-1 phase expands with applied pressure partially on account of the ground-state AF-2 phase.     

Temperature and pressure dependencies of the crystal structure of the organic superconductor (TMTSF) 2 ClO 4

The crystal structure of (TMTSF)₂ClO₄ has been determined at (7 K, 1 bar) and at (7 K, 5 kbar) with a high accuracy. For the latter, low temperature and pressure were applied simultaneously using a X-ray diffraction instrumentation designed in our laboratory, these results are the first for molecular compounds. The effects of lowering the temperature are not the same as those produced by increasing the pressure. At (7 K, 1 bar) the anion ordering which occurs in this compound, and which is characterised by the appearance of b ^* /2 superlattice reflections, is well observed. This anion ordering leads to the presence of two independent stacks of TMTSF cations which is the only case found in the Bechgaard salts family. The comparison of the low temperature crystal structures under atmospheric pressure and at 5 kbar shows that the centres of mass are nearly the same, independent of the pressure: the interchain interactions do not depend on the doubling of the unit cell. Under pressure, the ordering (0, 1/2, 0) does not occur at any temperature. These structural data are confirmed by the quantum chemical calculations which show that the difference in the site energy of the two independent cations is 100 meV. Received 10 April 2000 and Received in final form 27 September 2000     

EPR spectrum of donors in 6H SiC in a broad temperature range

An EPR study of donors in 6H SiC crystals with an uncompensated donor concentration (N _D−N _A) of 2×10¹⁸ to 1×10¹⁶ cm⁻³ performed in the temperature range 4.2 to 160 K at frequencies of 9 and 140 GHz showed that 6H n-SiC samples have two donor states in the gap. One of them originates from nitrogen occupying three inequivalent lattice sites with ionization energies of 150 and 80 meV, and the second is connected with a structural defect lying deeper in the gap than nitrogen. The temperature dependences of donor EPR line intensities have been found to deviate from the Curie law. The observed EPR line-intensity peaks of donors are produced in a temperature-driven successive redistribution of donor electrons between the donor levels. The temperature dependences of EPR line intensities obtained from samples with low donor concentrations were used to determine the valley-orbit splitting of nitrogen in cubic sites. Fiz. Tverd. Tela (St. Petersburg) 40, 1824–1828 (October 1998)     

Measurements of hall-effect and sheet resistivity as a function of temperature on hot,phosphorous implants in silicon

Abstract

Results of Hall-effect measurements as a function of temperature on a layer formed by hot, phosphorous (P³¹) implant in Si at 400 keV energy in a random direction are presented; the dose used was 10¹⁵ ions cm^?2. The electrical behaviour of the layer as a function of isochronal annealing was examined.

A detailed analysis of the measured quantities n _8eff, the effective surface density of free carriers, and μ_eff, the effective mobility, down to 4.2°K is presented using the integral equations:

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These formulae were solved numerically, the input data viz: the distribution of donor centres and compensating damage centres being assumed from the current literature.

Results from this analysis indicate a rather complicated distribution of current flow in the layer as a function of temperature, indicating that the traditional interpretation of Hall measurements based on a homogeneous distribution model is of questionable validity.     

Role of chemical pressure in enhancing the transition temperature (T<Subscript>c</Subscript>) and upper critical field (H<Subscript>c2</Subscript>) in the Y-doped Ce-oxyfluoride superconductor

Structural and superconducting properties of yttrium substituted Ce_1-xY_x(O/F)FeAs superconductors have been investigated for the first time. All the compounds crystallize in the tetragonal ZrCuSiAs structure type. There is a decrease in both the a and c lattice parameters on increasing yttrium substitution (with fixed F content) along with a substantial enhancement of the superconducting transition temperature (T_c) and upper critical field (H_c2) indicating the influence of chemical pressure. Interestingly the maximum T_c (~48 K) was observed for an intermediate composition (Ce_0.5Y_0.5O_0.9F_0.1FeAs) which is higher than either of the parent Y or Ce-compounds, (YO_0.9F_0.1FeAs (~10 K) and Ce(O/F)FeAs (~42 K)). The transition temperature was also found to be nearly independent of the electron -doping introduced by fluoride substitution (0.1 to 0.2 moles per formula unit) indicating the significance of the charge reservoir layer (Ce-O). The yttrium substituted (fluoride free) compositions of the type, Ce_1-xY_xOFeAs were found to be semimetallic like the parent compound CeOFeAs with the shift in the anomaly temperature towards low temperature on substitution of yttrium ions. Hall coefficient and thermopower measurements show an increase in charge carriers (electrons) through Y-doping in fluorine doped CeOFeAs.     

Charge transfer effects on the Fermi surface of Ba0.5K0.5Fe2As2

Ab‐initio calculations within density functional theory are performed to obtain a more systematic understanding of the electronic structure of iron pnictides. As a prototypical compound we study Ba_0.5K_0.5Fe₂As₂ and analyze the changes of its electronic structure when the interaction between the Fe₂As₂ layers and their surrounding is modified. We find strong effects on the density of states near the Fermi energy as well as the Fermi surface. The role of the electron donor atoms in iron pnictides thus cannot be understood in a rigid band picture. Instead, the bonding within the Fe₂As₂ layers reacts to a modified charge transfer from the donor atoms by adapting the intra‐layer Fe‐As hybridization and charge transfer in order to maintain an As^3‐ valence state.     

Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Electron spin beats in InGaAs/GaAs quantum dots

Time-resolved picosecond spectroscopy is used for the first time to study optical orientation and spin dynamics of carriers in self-organized In(Ga)As/GaAs quantum-dot (QD) arrays. Optical orientation of carriers created by 1.2 ps light pulses, both in the GaAs matrix and wetting layer, and captured by QDs is found to last a few hundreds of picosecond. The saturation of electron ground state at high-excitation-light intensity leads to electron polarization in excited states close to 100% and to its vanishing in ground state. Electron-spin quantum beats in a transverse magnetic field are observed for the first time in semiconductor QDs. We thus determine the quasi-zero-dimensional electron g factor in In_0.5Ga_0.5As/GaAs QDs to be: |g _⊥|=0.27±0.03. Fiz. Tverd. Tela (St. Petersburg) 41, 871–874 (May 1999) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

The location and shape of the conduction band minima in cubic silicon carbide

We have measured the inter-bound state excitation spectrum of the N_C donor in cubic β-SiC through the ‘two-electron’ transition satellites observed in the luminescent recombination of excitons bound to neutral N donors. Transitions are seen to p as well as s-like donor states although the transition oscillator strength is derived from interaction with the impurity core since parity is conserved through inter-valley scattering by p-like X phonons. The Zeeman splitting of a luminescence line involving the 2p± donor state yield the electron mass parameter m_t = 0.24 ± 0.01 m₀. This and the directly measured energy separations of the 2p₀ and 2p± states yields m_t/m₁ = 0.36 ± 0.01 with the static dielectric constant K = 9.92 ± 0.1. Mutually consistent central cell corrections of 1.1 and 8.4 meV are observed for the 2s(A₁) and 1s(A₁) donor states, the latter being in agreement with a recent estimate from electronic Raman scattering by Gaubis and Colwell. The ionization donor energy of the N_C donor, 53.6 ± 0.5 meV is consistent with earlier, less accurate estimates from donor-acceptor pair and free to bound luminescence. There is no evidence for a ‘camel's back’ conduction band structure in cubic SiC, unlike GaP. The two-phonon sidebands of the N_C donor exciton luminescence spectrum in SiC can be constructed by X and Г phonons only.     

Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures

Photoluminescence and photoluminescence excitation spectroscopy on Ga_.47In_.53As multi quantum wells confined either by homogenous ternary Al_.48In_.52As barriers or by Ga_.47In_.53As/Al_.48In_.52As short-period superlattice (SPS) barriers show that the confinement by SPS barriers improves the edge luminescence significantly. The spectral width of the free-exciton absorption and the low-temperature emission peak as well as the Stokes-shift between emission and excitation spectra are reduced as compared to samples clad by homogenous ternary Al_.48In_.52As barriers. Based on temperature-dependent emission and excitation measurements, the dominant low-temperature emission line in the SPS-clad Ga_.47In_.53As multi quantum wells is assigned to intrinsic excitonic recombination.     

Magnetic states of the surface and bulk of ferrites near a phase transition at the Curie temperature

Investigations of the magnetic state of a surface layer ~200 nm thick and of the bulk in macroscopic ferrite crystals of the type Ba-M (BaFe₁₂O₁₉) are performed in the phase transition region around the Curie temperature (T _c). The method of simultaneous gamma, x-ray, and electron Mössbauer spectroscopy, which made it possible to compare directly the phase states of the surface and bulk of the sample, is used for the measurements. It is observed experimentally that in BaFe₁₂O₁₉ the transition of a surface layer ~200 nm thick to the paramagnetic state occurs at temperatures below T _c. It is established that the transition temperature T _c(L) of a thin layer localized at depth L from the surface of the crystal increases with distance from the surface and reaches the value T _c at the lower boundary of the “critical” surface layer. Therefore, near T _c a nonuniform state in which the crystal is magnetically ordered in the bulk but disordered at the surface is observed. A phase diagram of the states of the surface and of the bulk of macroscopic magnets near the Curie (or Néel) point is proposed on the basis of all the experimental results obtained in the present work as well as previously published results.