Electrochromic performance of the mixed V2O5–WO3 thin films synthesized by pulsed spray pyrolysis technique

Vanadium pentoxide (V₂O₅) mixed tungsten trioxide (WO₃) thin films have been synthesized by a novel pulsed spray pyrolysis technique (PSPT) on glass and fluorine doped tin oxide (FTO) coated glass substrates at 400 °C. Aqueous solutions of equimolar vanadium chloride and ammonium tungstate were mixed in volume proportions (5%, 10% and 15%) for the deposition of V₂O₅–WO₃ thin films. The structural, morphological, optical and electrochemical properties of V₂O₅–WO₃ thin films were investigated by FT-IR, XRD, SEM, cyclic voltammetry, chronoamperometry and chronocoulometry techniques. The results showed that the electrochemical properties of V₂O₅ were altered by mixing WO₃. All the films exhibited cathodic electrochromism in lithium containing electrolyte (0.5 M LiClO₄ + propylene carbonate (PC)). Maximum coloration efficiency (CE) of about 49 cm² C⁻¹ was observed for the V₂O₅ film mixed with 15% WO₃. The electrochemical stability of the sample was examined and it was found to be stable up to 1000 cycles.     

Optical detection of organic hydrides with platinum-loaded tungsten trioxide

Tungsten trioxide powder with loading 0.1 wt% platinum (Pt/WO₃) was prepared for optical detection of organic hydrides such as cyclohexane, decalin by impregnation with PtCl₆^2? and subsequent calcination in air at 500 °C. The scanning electron microscopic observation of Pt/WO₃ shows that the Pt particles with mean diameters of 80–100 nm were on the surface of the WO₃ powder. The Pt/WO₃ showed coloration for 13% cyclohexane at higher 100 °C and for 1.3% cyclohexane at 200 °C. The in-situ XRD results of the Pt/WO₃ in coloring/bleaching change indicate that the coloring of Pt/WO₃ was caused by transformation of WO₃ to tungsten bronze. The analysis of reacted gas demonstrates that Pt on WO₃ produces only hydrogen and benzene through dehydrogenation of cyclohexane over 100 °C. It was founded that the Pt/WO₃ has potential of optical detection of organic hydrides by heating at higher 100 °C.     

Effect of molybdenum doping on the electrochromic properties of tungsten oxide thin films by RF magnetron sputtering

Thin films of pure and molybdenum (Mo)-doped tungsten trioxide (WO₃) were deposited on indium tin oxide (ITO)-coated glass and Corning glass substrates by RF magnetron sputtering technique. The effect of Mo doping on the structural, morphological, optical and electrochromic properties of WO₃ films was studied systematically. The energy dispersive X-ray analysis (EDAX) revealed that the films consist of molybdenum concentrations from 0 to 2 at.%. X-ray diffraction (XRD) studies indicated that with the increase of Mo concentration the structural phase transformation takes place from polycrystalline to amorphous phase. The crystallite size of the films decreased from 24 to 12 nm with increase of doping concentration of Mo in WO₃. Scanning electron microscope (SEM) analysis revealed that Mo dopant led to significant changes in the surface morphology of the films. The electrochemical and electrochromic performance of the pure and Mo-doped WO₃ were studied. The WO₃ films formed with 1.3 at.% Mo dopant concentration exhibited high optical modulation of 44.3 % and coloration efficiency of 42.5 cm²/C.     

Hydrogen gas-sensing properties of Pt/WO<Subscript>3</Subscript> thin film in various measurement conditions

A well-known gasochromic material is Pt particle-dispersed tungsten trioxide (Pt/WO₃). Its optical properties could make it effective as a hydrogen gas sensor. In this study, Pt nanoparticle-dispersed WO₃ thin films were prepared using the sol–gel process, and their optical and electrical properties dependent on the working environment (i.e., temperature, hydrogen gas concentration, oxygen partial pressure, etc.) were investigated. The Pt/WO₃ thin films prepared at 400 °C showed the largest change in optical transmittance and electrical conductivity when exposed to hydrogen gas compared with the films prepared at other temperatures. The optical absorbance and electrical conductivity were found to be dependent on the hydrogen and oxygen gas concentration in the atmosphere because generation and disappearance of W⁵⁺ in the thin films depend on the equilibrium reaction between injection and rejection of H⁺ into and from the thin films. In addition, the equilibrium reaction depends on the hydrogen and oxygen gas concentrations.     

Effect of the excimer laser irradiation on sol–gel derived tungsten–titanium dioxide thin films

A novel technique based on the excimer laser induced crystallization and modification of TiO₂ thin films is being reported. W⁺⁶ ions loaded TiO₂ (WTO) precursor films were prepared by a modified sol–gel method and spin-coated onto microscopic glass slides. Pulsed KrF (248 nm, 13 ns) excimer laser was used to irradiate the WTO amorphous films at various laser parameters. Mesoporous and nanostructured films consisting of anatase and rutile were obtained after laser irradiation at room temperature. The effect of varying W⁺⁶ ions concentrations on structural and optical properties the WTO films was analyzed by X-ray diffraction, field-emission scanning electron microscope, UV-Vis spectrophotometer and transmission electron microscope before and after laser treatment. Films irradiated for 10 pulses at 65–75 mJ/cm² laser fluence, exhibited anatase whereas higher parameters promoted the formation of rutile. XPS results revealed WO₃ along with minor proportion of WO₂ compounds after laser irradiation. Photo-absorbance of the WTO films was increased with increase in W⁺⁶ ions concentration in the film. TEM results exhibited a crystallite size of 15 nm which was confirmed from SEM results as well.     

An influence of deposition temperature on structural,optical and electrical properties of sprayed ZnO thin films of identical thickness

Nanocrystalline ZnO thin films were deposited at different temperatures (T_s = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of T_s on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in T_s. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher T_s demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (～10^?2 Ω-cm), superior figure of merit (～10^?3 Ω^?1) and low sheet resistance (～10² Ω/□). The charge carrier concentration (η -/cm³) and mobility (μ – cm²V^?1s^?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.     

ArF excimer laser deposition of wide-band gap solid electrolytes for thin film batteries

High quality solid electrolyte thin films was grown by pulsed laser deposition (PLD) using a high photon energy ArF excimer laser. Various amorphous thin films were successfully deposited on glass substrates from oxide targets; such as Li₃PO₄, LiBO₂, Li₂SiO₃, Li₂CO₃, Li₂SO₄, Li₂ZrO₃, LiAlO₂, Li₂WO₄ and Ohara glass ceramics. The morphology, optical property and ionic conductivity of these films were examined by optical microscope, UV–VIS spectroscopy and impedance analysis. Dramatic improvement of the film morphology was observed by using a high photon energy laser, while the broken film with many droplets was obtained by using lower ones. Ionic conductivity of the films was examined by impedance spectroscopy and dc polarization method. For example, an ionic conductivity of a Li₃PO₄ film was 4.6 × 10^? 6 S cm^? 1 at 25 °C with activation energy of 0.57 eV. Electronic conductivity measurements revealed that most of the films were pure lithium ion conductors, while a Li₂WO₄ film was a mixed conductor.     

Phase transformation of nanostructured titanium dioxide thin films grown by sol–gel method

Nanostructured TiO₂ thin films were deposited on quartz glass at room temperature by sol–gel dip coating method. The effects of annealing temperature between 200^∘C to 1100^∘C were investigated on the structural, morphological, and optical properties of these films. The X-ray diffraction results showed that nanostructured TiO₂ thin film annealed at between 200^∘C to 600^∘C was amorphous transformed into the anatase phase at 700^∘C, and further into rutile phase at 1000^∘C. The crystallite size of TiO₂ thin films was increased with increasing annealing temperature. From atomic force microscopy images it was confirmed that the microstructure of annealed thin films changed from column to nubbly. Besides, surface roughness of the thin films increases from 1.82 to 5.20 nm, and at the same time, average grain size as well grows up from about 39 to 313 nm with increase of the annealing temperature. The transmittance of the thin films annealed at 1000 and 1100^∘C was reduced significantly in the wavelength range of about 300–700 nm due to the change of crystallite phase. Refractive index and optical high dielectric constant of the n-TiO₂ thin films were increased with increasing annealing temperature, and the film thickness and the optical band gap of nanostructured TiO₂ thin films were decreased.     

Correlation between crystallinity and resistive switching behavior of sputtered WO3 thin films

The as-deposited WO₃ thin films were post-annealed at different temperatures (300 °C and 600 °C) in air to investigate a correlation between crystallinity and switching behavior of WO₃ thin films. Associating the results of XRD, FTIR, XPS and FESEM measurements, the annealing-caused crystallinity change contributes to the variation of the switching behaviors of the WO₃ thin films. The as-deposited WO₃ films with low crystalline structure are preferred for random Ag conducting path, resulting in large switching ratio but fluctuating I–V hysteresis, whereas the annealed WO₃ films with crystallized compact structure limits Ag conducting path, favoring the stable I–V hysteresis but small switching ratio. It is therefore concluded that electrochemical redox reaction-controlled resistance switching depends not only on electrode materials (inert and reactive electrodes) but also on crystallinity of host oxide.     

Large blue shift in the optical band-gap of sol-gel derived Ba0.5Sr0.5TiO3 thin films

In this paper, we report and analyze the large blue shift in the optical band-gap of sol-gel derived Ba_0.5Sr_0.5TiO₃ (BST) thin films. BST films of different thickness (150 nm, 320 nm and 480 nm respectively) were deposited layer by layer onto fused quartz substrates by a spin coating technique. The drying temperature for individual layers (pre-sintering temperature) was varied as 400, 500 and 600 ^°C. A large blue shift in the band-gap was observed (with a value 4.70 eV compared to the bulk value of 3.60 eV) for films pre-sintered at 400 ^°C, which decreased with increase in the pre-sintering temperature. To date such blue shifts have been attributed to grain size reduction, stress and the amorphous nature of the films. Here, the blue shift has been correlated with the presence of charge carriers generated by oxygen vacancies and explained on the basis of the Burstein-Moss effect.     

Comparison of electrochromic amorphous and crystalline electron beam deposited WO3 thin films

Tungsten oxide (WO₃) thin films were prepared by an electron beam deposition technique. Films were deposited onto fluorine-doped tin oxide (FTO)-coated glass substrates maintained at 523 K. The as-deposited films were found to be amorphous and crystallized after annealing at 673 K. The electrochromic and optical properties, structure, and morphology are strongly dependent on the annealing conditions. Cyclic voltammetry (C-V) was carried out in the potential range −1 to +1 V. Before and after colouration, the films were characterized by measuring transmittance and reflectance. The colouration efficiencies at 630 nm are about 39.4 cm² C⁻¹ and 122.2 cm² C⁻¹ for amorphous and crystalline films, respectively. An investigation of self-bleaching for the coloured film revealed that the film fades gradually over time.     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Effect of oxygen partial pressure and VO<Subscript>2</Subscript> content on hexagonal WO<Subscript>3</Subscript> thin films synthesized by pulsed laser deposition technique

We report on the effect of oxygen partial pressure and vacuum annealing on structural and optical properties of pulsed laser-deposited nanocrystalline WO₃ thin films. XRD results show the hexagonal phase of deposited WO₃ thin films. The crystallite size was observed to increase with increase in oxygen partial pressure. Vacuum annealing changed the transparent as-deposited WO₃ thin film to deep shade of blue color which increases the optical absorption of the film. The origin of this blue color could be due to the presence of oxygen vacancies associated with tungsten ions in lower oxidation states. In addition, the effects of VO₂ content on structural, electrochemical, and optical properties of (WO₃)_1−x (VO₂) _x nanocomposite thin films have also been systematically investigated. Cyclic voltammogram exhibits a modification with the appearance of an extra cathodic peak for VO₂–WO₃ thin film electrode with higher VO₂ content (x ≥ 0.2). Increase of VO₂ content in (WO₃)_1−x (VO₂) _x films leads to red shift in optical band gap.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Effective utilization of spray pyrolyzed CeO2 as optically passive counter electrode for enhancing optical modulation of WO3

Nanocrystalline cerium oxide (CeO₂) thin films were deposited onto the fluorine doped tin oxide coated glass substrates using methanolic solution of cerium nitrate hexahydrate precursor by a simple spray pyrolysis technique. Thermal analysis of the precursor salt showed the onset of crystallization of CeO₂ at 300 °C. Therefore, cerium dioxide thin films were prepared at different deposition temperatures from 300 to 450 °C. Films were transparent (T ~ 80%), polycrystalline with cubic fluorite crystal structure and having band gap energy (Eg) in the range of 3.04–3.6 eV. The different morphological features of the film obtained at various deposition temperatures had pronounced effect on the ion storage capacity (ISC) and electrochemical stability. The larger film thickness coupled with adequate degree of porosity of CeO₂ films prepared at 400 °C showed higher ion storage capacity of 20.6 mC cm^? 2 in 0.5 M LiClO₄ + PC electrolyte. Such films were also electrochemically more stable than the other studied samples. The Ce⁴⁺/Ce³⁺ intervalancy charge transfer mechanism during the bleaching–lithiation of CeO₂ film was directly evidenced from X-ray photoelectron spectroscopy. The optically passive behavior of the CeO₂ film (prepared at 400 °C) is affirmed by its negligible transmission modulation upon Li⁺ ion insertion/extraction, irrespective of the extent of Li⁺ ion intercalation. The coloration efficiency of spray deposited tungsten oxide (WO₃) thin film is found to enhance from 47 to 53 cm² C^? 1 when CeO₂ is coupled with WO₃ as a counter electrode in electrochromic device. Hence, CeO₂ can be a good candidate for optically passive counter electrode as an ion storage layer.     

Ultrasonically prepared photocatalyst of W/WO3 nanoplates with WS2 nanosheets as 2D material for improving photoelectrochemical water splitting

A sonochemical treatment has been an emerged technique as an interesting method for fabricating different photocatalysts with unique photoelectrochemical (PEC) properties. This study investigated the PEC performance of WO₃ with WS₂ nanosheets as a 2D material before calcination (WO₃/WS₂-90) and after calcination (WO₃/WS₂-450) prepared with sonochemical treatment. The WS₂ nanosheets were prepared from a liquid exfoliation phase with few-layer nanosheets, approximately 6.5 nm in thickness. The nanosheets were confirmed by UV–Vis spectroscopy and atomic force microscopy. Further, XPS, RAMAN, and SEM-EDAX analyses indicated that, following calcination of the WO₃/WS₂ electrode, the WS₂ nanosheets initially transformed to 2D-WO₃. After depositing the WS₂ nanosheets on the WO₃, the photocurrent density increased substantially. The WO₃/WS₂-450 films after calcination showed a photocurrent density of 5.6 mA.cm⁻² at 1.23 V vs. Ag/AgCl, which was 3.1 and 7.2 times higher, respectively than those of the WO₃/WS₂-90 before calcination and pure WO₃. Mott-Schottky and electrochemical impedance spectroscopy analyses confirmed the fabrication of the WO₃/WS₂ photoanode after calcination. The deposition of WS₂ nanosheets onto pure WO₃ increased the donor concentration (24-fold), reduced the space charge layer (4.6-fold), and decreased the flat band potential (1.6-fold), which could all help improve the photoelectrochemical efficiency. Moreover, the incorporation of WO₃ with WS₂ nanosheets as a 2D material (WO₃/WS₂-450) enhanced the incident photon current efficiency (IPCE) by 55%. In addition, the applied-bias photon-to-current conversion efficiency of the WO₃/WS₂-450 films was approximately 2.26% at 0.75 V (vs. Ag/AgCl), which is 5.6 and 9 times higher, respectively than those of WO₃/WS₂-90 and pure WO₃.     

Intricate photocatalytic decomposition behavior of gaseous methanol with nanocrystalline tungsten trioxide films in high vacuum

Gas phase photocatalytic decomposition of methanol with nanocrystalline tungsten trioxide (WO₃) thin films in high vacuum was investigated. WO₃ thin films were prepared from a novel precursor prepared using peroxo-tungstic acid and polyethylene glycol (PEG300) in water. Uniform thin films of WO₃ with different morphologies such as micro-sheets, platelets, nanorods and nanoparticles were fabricated by varying the concentration of PEG300 in the precursor solution and by optimizing other preparative parameters. Nanocrystalline thin films were obtained with 20% of PEG300 in the precursor solution and at a calcination temperature of 350 °C, followed by post annealing in air at 500 °C. Photocatalytic decomposition of gaseous methanol in high vacuum was examined with nanocrystalline WO₃ thin films using a quadrupole mass spectrometer at a real-time scale under visible (400-700 nm) and UVA (300-400 nm) illumination. Methanol was first decomposed to formaldehyde via direct hole transfer mechanism. Subsequently formaldehyde was decomposed to CO and finally to CO₂. As a result, the partial pressures of CH₂O, CO and CO₂ showed a switching phenomenon according to the ON/OFF of light illumination. A rapid decrease in the photocatalytic activity was observed due to photo-induced desorption of methanol during the initial light pulse and gradual decrease at longer times was observed because of formation of tungsten bronze. Thus, the overall process of methanol decomposition over WO₃ films is complex convolution of elementary steps that involve several intermediates.     

Structural and optical properties of La-doped BaSnO3 thin films grown by PLD

In this study the structural and optical properties of lanthanum-doped BaSnO₃ powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10⁻⁴ mbar, phase pure BaSnO₃ films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO₃ doped with 0~7 at% of La. The highest conductivity, 9 Scm⁻¹, was obtained for 7 at% La-doped BaSnO₃. Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO₃ thin films.     

Effect of annealing temperature on the photocatalytic activity of WO3 for O2 evolution

Commercial WO₃ powder was annealed in air at four different temperatures and characterized by XRD and BET. The samples were used for the photooxidation of H₂O to O₂ under visible light irradiation (λ > 420 nm) in the presence of IO₃⁻ and the evolved gases were analyzed by gas chromatography. The results showed that the WO₃ photocatalyst of monoclinic phase, which was obtained by annealing at 750 °C for 4 h, displayed the best activity in terms of O₂ evolution among all the samples. Moreover, the activity was also found to be slightly affected by the grain size of the WO₃ samples.     

An in-depth investigation of physical properties of Nd doped CdS thin films for optoelectronic applications

The different contents (0 wt.%, 1 wt.%, 3 wt.% and 5 wt.%) of Nd @CdS films were casted using spray pyrolysis deposition procedure. The preferential orientation of crystallites along (002) for all films was noted by XRD profiles. The mean crystalline size (D_avg), strain (ɛ_avg) and dislocation density (δ_avg) have also been evaluated using XRD results and discussed. The spherical shape morphology of nanoscale particles of Nd@CdS films were analyzed by FE-SEM, exhibits the increased grain sizes with Nd doping concentration. The optical band gaps (2.4–2.36 eV) were found to be decreased with increasing Nd doping content upto (3 wt.%) and increased at 5 wt.% The PL profile displays a stout intensity peak observed at 532 nm and week emission band at 638 nm. The dielectric constant, loss and loss tangent of pristine and Nd@CdS thin films were investigated by dielectric measurements. The optimum values of non-linear refractive index 1.06 × 10⁻¹⁰, 4.41 × 10⁻¹¹, 3.44 × 10⁻¹¹ and 1.85 × 10⁻¹⁰ were observed for Nd content varies from pristine to 5 wt.% respectively. Furthermore, optimum non-linear susceptibility values 7.31 × 10⁻¹², 1.079 × 10⁻¹², 4.53 × 10⁻¹³ and 1.36 × 10⁻¹¹ were observed for 0, 1, 3 and 5 wt.% of Nd contents respectively in CdS. Such type of characteristics of Nd doped CdS thin films can be useful for optical devices.