聚合物前驱体3D打印制备高性能陶瓷

3D打印制备陶瓷可以实现结构-材料设计一体化,为复杂形状陶瓷材料快速成型提供了新途径。但是传统的3D打印制备陶瓷是以陶瓷粉末或陶瓷颗粒为打印材料,存在陶瓷构件尺寸精度差、表面光洁度低和力学性能不佳等问题。近年来,以聚合物前驱体为打印材料,通过3D打印成型、高温裂解等工艺制备高性能陶瓷技术的出现为改善这些不足提供了新方法,成为3D打印陶瓷领域的研究热点。本文概述了聚合物前驱体3D打印制备高性能陶瓷的研究进展,重点阐述了本体聚合物前驱体、聚合物前驱体/光敏化合物、聚合物前驱体/巯基化合物、光敏基团改性聚合物前驱体、增强体/聚合物前驱体五种典型材料体系的研究现状,并对其今后的发展方向进行了展望。     

硅基聚合物前驱体转化陶瓷微观结构研究进展

聚合物前驱体转化法使得陶瓷材料的制备实现了可分子设计和可聚合物工艺加工,在陶瓷基复合材料、陶瓷纤维、功能涂层、特种胶粘剂等方面具有重要应用价值.不同于传统粉末烧结工艺,该方法涉及有机聚合物至无机陶瓷的转化过程,因此,聚合物前驱体的分子结构以及陶瓷化工艺对所制备陶瓷材料的微观结构和功能特性具有直接影响.本文综述了基于聚合...     

聚合物前驱体法制备立方相WO_3薄膜的光电化学性质

以(NH4)6W7O24·6H2O为钨源,聚乙二醇1000(PEG 1000)为配位聚合物,采用聚合物前驱体法制备了WO3薄膜,利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见(UV-Vis)吸收光谱等手段对其结构进行表征.采用循环伏安法、Mott-Schottky测试、瞬态光和稳态光电流谱等方法研究了WO3薄膜电极的光电化学性能.结果表明,制备的WO3薄膜为立方晶系,禁带宽度约为2.7eV.当热处理温度为450℃时,载流子浓度达到最大2.44×1022cm-3,平带电位为0.06V,在500W氙灯光源照射和1.2V偏压下,光电流密度为2.70mA·cm-2.进一步探讨了热处理温度对其光电性质的影响及其机理.     

聚合物前驱体方法低温合成LiTaO3纳米粉体

采用聚合物前驱体方法,以柠檬酸为配位剂,乙二醇为酯化剂,低温合成纳米LiTaO3粉体.以红外光谱和拉曼光谱研究了柠檬酸与金属离子的配位情况.当柠檬酸和金属离子物质的量的比为2.5:1、柠檬酸和乙二醇的物质的量比为1:2时可形成稳定的Li-Ta前驱体溶胶.用差热.热重对凝胶前驱体的热分解历程进行分析,采用X射线衍射和红外光谱对Li-Ta凝胶前驱体及不同温度下煅烧所得粉体的相组成进行分析.结果表明,凝胶前驱体经600℃下煅烧2 h可以得到纯钙钛矿型纳米LiTaO3粉体.平均粒径为60～80 nm.     

基于单独MBA凝胶纤维的RAFT聚合制备聚合物微米管

研究凝胶形成温度对N,N'-亚甲基双丙烯酰胺(MBA)凝胶纤维尺寸的影响, 发现凝胶纤维平均直径随着凝胶形成温度的降低而降低, 在-25 ℃下可得到平均直径为1.1 μm的小尺寸凝胶纤维. 在不加共聚单体条件下, 以1.1 μm小尺寸MBA纤维为模板和反应单体, 通过可逆加成断裂链转移(RAFT)自由基聚合, 以较高收率得到形貌规整并有一定自支撑能力的聚合物微米管. 研究各种反应条件对聚合反应的影响, 结果表明RAFT试剂用量、引发剂用量及反应温度都会影响产物形貌及收率. 采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和红外光谱仪表征了聚合物微米管的微观形貌和组成, 热失重分析表明产物具有很高的耐热性能.     

SiO2/蔗糖杂化溶胶制备SiC纤维前驱体

蔗糖;SiO2;杂化纤维;前驱体;SiC纤维;溶胶凝胶法     

莠去津分子印迹聚合物的合成及识别性能研究

以莠去津为模板分子,α-甲基丙烯酸为功能单体,在氯仿溶剂中合成了莠去津分子印迹聚合物．紫外光谱研究表明莠去津与功能单体α-甲基丙烯酸之间确实存在作用力,通过红外光谱分析了聚合物结构,可以确定模板分子与功能单体之间的作用力为氢键．利用透射电镜表征了溶剂用量对印迹聚合物微观形貌的影响,综合利用平衡结合实验考察了不同溶剂用量...     

固化条件对聚合物分散液晶膜电光性能的影响

选用聚乙二醇二缩水甘油醚(EGDE)/季戊四醇缩水甘油醚(PERTGE)/1,8-二氨基-3,6-二氧杂辛烷(EDBEA)/向列相液晶(SLC1717)复合体系,在不同的固化条件下,通过热聚合诱导相分离方法制备了一系列电光性能不同的聚合物分散液晶(polymer dispersed liquid crystal,简称PDLC)膜.研究了固化温度和固化时间对制备的PDLC膜中聚合物网络的微观形貌和电光性能的影响.结果表明,随着固化温度的升高以及固化时间的缩短,PDLC膜的对比度、驱动电压和开态响应时间逐渐增大,而关态响应时间逐渐减小.在固化温度为363.2 K,固化时间为7 h时,所制备的PDLC膜具有较佳的电光性能.     

聚合物微观结构对聚合物电解质膜性能的影响

聚合物的微观结构是设计具有优异的电化学性能的聚合物电解质膜(PEMs)的基础.在电解质膜中,相分离结构形成的离子簇和离子通道可以影响膜在高温低湿度条件下的离子传导和水的传输,这种结构形成的形貌也可以影响膜的吸水率、溶胀度、碱稳定性等性能.近几年来,人们对于具有微观相分离形貌的PEMs的合成和形貌开展了很多研究.本文主要...     

先驱体聚合物粘结法制备SiC纳米多孔陶瓷

采用SiC纳米粉体与聚碳硅烷(PCS)为原料低压成型低温烧结制备SiC纳米多孔陶瓷,研究了PCS含量对烧成纳米多孔陶瓷性能的影响。SEM和AFM微观形貌分析表明,PCS裂解产物将SiC纳米颗粒粘结起来,烧成陶瓷内部有大量的纳米孔存在。烧成SiC纳米多孔陶瓷孔径分布呈单峰分布、孔径分布范围窄,随着PCS含量的增大烧成多孔陶瓷强度增大,但孔隙率降低、烧结过程中坯体尺寸线收缩率增大。PCS含量为20wt%时三点弯折强度为36.8MPa,孔隙率为39.5%,平均孔径为49.3 nm。     

Controlled Al-doped single-crystalline silicon nitride nanowires synthesized via pyrolysis of polymer precursors

Al-doped single-crystalline Si(3)N(4) nanowires were synthesized by catalyst-assisted pyrolysis of polymeric precursors. The doping levels can be controlled by tailoring the Al concentration in the precursors. It is found that the Al concentration has a significant effect on the shape, sizes, and phase compositions of the synthesized Si(3)N(4) low-dimensional nanomaterials. The photoluminescence measurements revealed that the Al dopants have a profound effect on the emission behavior. The current study provides a simple way to realize the controlled doping in Si(3)N(4) nanomaterials, which could be useful for applications in optoelectronic nanodevices.     

Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

Aligned silicon carbide nanowires were synthesized directly from the silicon substrates via a novel catalytic reaction with a methane-hydrogen mixture at 1,100 degrees C, with a mean diameter of 40 nm and length of 500 microm; they consist of a single-crystalline zinc blende structure crystal in the [111] growth direction; X-ray diffraction, Raman, and infrared spectroscopy confirm the synthesis of high-purity silicon carbide nanowires.     

Preparation and characterization of bundled one-dimensional Si3N4 single-crystalline nanowires by catalytic pyrolysis of a polymer precursor

Bundled one-dimensional Si₃N₄ single-crystalline nanowires are successfully synthesized by pyrolysis of a polymer precursor using Fe as catalyst. The average diameter of the obtained Si₃N₄ nanowires is about 200 nm, and the nanowires have perfect single-crystalline structure. Intense photoluminescence was observed centered at 1.83, 2.79, 3.24, and 3.74 eV. The nanowires could be useful in the fabrication of optoelectronic nanodevices and nanocomposites.     

Preparation of high-purity straight silicon nanowires by molten salt electrolysis

Silicon nanowires of high purity and regular morphology are of prime importance to ensure high specific capacities of lithium-ion batteries and reproducible electrode assembly process. Using nickel formate as a metal catalyst precursor, straight silicon nanowires(65–150 nm in diameter) were directly prepared by electrolysis from the Ni/SiO_2 porous pellets with 0.8 wt% nickel content in molten CaCl_2 at900 °C. Benefiting from their straight appearance and high purity, the silicon nanowires therefore offered an initial coulombic efficiency of 90.53% and specific capacity of 3377 m Ah/g. In addition, the silicon nanowire/carbon composite exhibited excellent cycle performance, retaining 90.38% of the initial capacity after 100 cycles. Whilst further study on the charge storage performance is still ongoing, these preliminary results demonstrate that nickel formate is an efficient and effective metal catalyst precursor for catalytic preparation of high purity straight silicon nanowires via the molten salt electrolysis, which is suitable for large-scale production.     

Structural and photocatalytic properties of silicon carbide powder and nanowires modified by gold nanoparticles

Research on Chemical Intermediates - Commercial bulk powder of SiC and SHS-synthesized SiC nanowires were studied. Gold nanoparticles were deposited onto a surface of both samples. Basic...     

Some further observations on polymethylsilane as a precursor for silicon carbide

Poly(methylsilanes) produced by sodium coupling of methyldichlorosilane (2:1 molar ratio) contain residual chlorine which can be removed by reduction with LiAlH₄ at low temperature. Following this reduction, the polymers contain catalytically active centers (presumed to be silyl anions) which, in THF solution, further polymerize and crosslink the polymer at room temperature, while in toluene solution they are inactive. The reduced polymethylsilane gives high yields (ca 75%) of ceramic product on pyrolysis, but the composition is rich in silicon, compared with pure silicon carbide (SiC). Addition of catalytic amounts of dimethylzirconocene (DMZ) to this polymer gives a product which pyrolyzes to a product with stoichiometry close to that of SiC. It is concluded that the DMZ has an important influence in promoting Si–C bond formation, relative to Si–Si bond formation, during the pyrolysis.     

Ordered mesoporous silicon carbide (OM-SiC) via polymer precursor nanocasting

Ordered mesoporous SiC with high specific surface area (650-800 m(2) g(-1)) and well ordered pore structure was obtained via nanocasting of polycarbosilanes into SBA-15 and subsequent conversion of the polymer at 1300 degrees C.     

Ultra long SiC nanowires with fluctuating diameters synthesized in a polymer pyrolysis CVD route

Large areas of millimeters long β-SiC nanowires with fluctuating diameters were synthesized in a polymer pyrolysis CVD (PPCVD) route. Polycarbosilane was used as the raw material. The morphology and structure of the nanowires were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results showed that the nanowires had non-periodically fluctuating diameters in the range of 100–250 nm along the axial direction, and were composed of well crystalline β-SiC along the 〈111〉 direction. The vapor–solid (VS) mechanism was employed to interpret the nanowires growth procedure, and the diameter fluctuation was resulted from the varying concentration of the local silane fragments.     

Formation of silicon carbide nanotubes and nanowires via reaction of silicon (from disproportionation of silicon monoxide) with carbon nanotubes

One-dimensional silicon-carbon nanotubes and nanowires of various shapes and structures were synthesized via the reaction of silicon (produced by disproportionation reaction of SiO) with multiwalled carbon nanotubes (as templates) at different temperatures. A new type of multiwalled silicon carbide nanotube (SiCNT), with 3.5-4.5 A interlayer spacings, was observed in addition to the previously known beta-SiC (cubic zinc blende structure) nanowires and the biaxial SiC-SiO(x) nanowires. The SiCNT was identified by high-resolution transmission microscopy (HRTEM), elemental mapping, and electron energy loss spectroscopy (EELS). The multiwalled SiCNT was found to transform to a beta-SiC crystalline structure by electron beam annealing under TEM.     

Analysis of silicon carbide powder by ETV-ICP-AES

Summary A direct tandem atomic spectroscopic method for the determination of Ca, Fe and Ti impurities in SiC powders with various grain size (0.7850<48.5 m) has been developed. The method is based on high temperature halogenation of the sample with Freon 12 in a graphite furnace and ICP-AES detection of the evolved sample components. The concentration of the matrix element silicon in the ICP increased to a maximum value after 10s of heating, independent of the grain size of the powder samples. For performing a calibration with standard solutions a finegrained, purified SiC-powder was evaporated simultaneously with the solution residues. The calibration curves produced using this analyte-addition technique and using within-laboratory solid standards were identical within experimental error.Presented at the 5th International Colloquium on Solid Sampling with Atomic Spectroscopy, May 18–20, 1992; Geel, Belgium. Papers edited by R. F. M. Herber, Amsterdam