Design of 1060nm tapered lasers with separate contacts

Numerical simulations have been used to produce advanced designs of high brightness gain guided tapered lasers emitting at 1,060 nm. The simulations predicted high modulation efficiency in devices with separate contacts and low front facet reflectivity. The devices fabricated following these design guidelines demonstrated high internal quantum efficiency in Broad Area lasers, output power of 3 W with good beam quality in tapered lasers with common contacts, and modulation efficiencies up to 20 W/A in tapered lasers with separate contacts, in good agreement with the simulation predictions.     

分布反馈光纤激光器阵列中外腔反馈特性研究

以半导体激光器中的复合腔模型和实测的分布反馈光纤激光器的外腔端面反射率为基础,对不同反射率条件下分布反馈光纤激光器的输出功率进行了仿真,同时搭建了二基元分布反馈光纤激光器阵列实验平台,对仿真结果进行了验证.仿真与实验结果表明:外腔反馈光重新注入分布反馈光纤激光器会增加激光器的输出功率,降低了阵列的输出功率平坦性.并且外腔端面反射率越大,这种平坦性降低的效果越明显.在构建分布反馈光纤激光器阵列时,应考虑外腔反馈对阵列输出功率平坦性造成的影响,尽量选择外腔端面反射率较小的激光器进行组阵.     

Theoretical analysis of widely tunable external cavity semiconductor laser with sampled fiber grating

Combination of equivalent reflection cavity model and transmission line theory is applied in theoretical analysis of external cavity semiconductor lasers with sampled fiber Bragg grating. The effects of device parameters on the resonant cavity mode and the side mode suppression ratio have been discussed. For a perfect anti-coated facet and the high coupling efficiency, it is found that the Vernier effect between combed reflectivity peaks and F-P cavity modes can be destroyed and the laser will work on multi-wavelength. The high coupling efficiency plays the same role as the lower anti-reflection coating reflectivity in the side mode suppression ratio and the mode resonance. Finally, the side mode suppression ratio is investigated in detail depending on the anti-coating reflectivity, the coupling efficiency and the high-reflection coating reflectivity.     

High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers

1lntroductionCarhan,aIVcolutnnelement,hasmanyadvantagesinGaAsAlGaAsmaterials,suchasIowdiffudricoefficient,relativelowactivateenergyabout26meV,highincmptiOnconcentratboandhighm0bilityduetothelowcomensaterate.SocarbonhasbeenwidelyusedinGaAsAlGaAsheter0unctionbipoartransistors(HBT),modulationdoPingfieldeffecttransistors(m),tunneldiodes,iInPurityinducedlayerdisorderinglaserdiodeS,anddistributedBraggreflectors(DBRs)intheverticalcavitysurfaceedrittinglasers(VCSEL).Ingeneral,therearesever…     

High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers

By low-pressure metalorganic chemical vapor deposition (LP-MOCVD) system,InGaAs/AlGaAs graded-index separate-confinement heterostructure strained quantum well lasers are grown with carbon doped the upper cladding layer and the capping layer. Carbon tetracholride (CCl4) is used as the carbon source. 100 μm oxide stripe lasers are fabricated,and the laser output power per facet (uncoated) reaches 1.2 W with 2A injection current under the room temperature continuous wave (CW) operation. The threshold current density is 150 A/cm2 with 1000 μm cavity length. The slope efficiency per facet reaches 0.53W/A,and the total external differential quantum efficiency is above 85%. The relations between the threshold current densities,the differential quantum efficiency and the cavity length are studied.     

Light Squeezing in a Fabry–Perot Cavity

A quantum mechanical model for the study of quadrature squeezing in radiation coming out of Fabry–Perot cavity containing nonlinear Kerr medium has been proposed. We have incorporated the vacuum fluctuations entering in the cavity through unused ports. The analysis has been applied to a sample of GaAs filled in the Fabry–Perot cavity and irradiated by an off-resonant Co:MgF₂ laser. Limitations on achievable squeezing due to incident pump power, interaction time, nonlinear coupling parameter and facet reflectivities have been discussed and it is seen that low reflectivity of front facet and high reflectivity of rear facet of the cavity produces substantial squeezing.     

Spectral properties of edge-emitting semiconductor laser subject to optical feedback from extremely short external cavity

We experimentally and theoretically study the impact of optical feedback from an extremely short external cavity (tens of μm) on the spectral behavior of edge emitting lasers (EELs). We are able to investigate a broad range of external cavity lengths and feedback strengths, by using a nanometer precision movable mirror attached to a fiber facet. A discrete modulation of the wavelength of operation is observed and its amplitude depends on the external cavity length and the external mirror reflectivity. We show that it is possible to optimize the tuning range of such a discrete wavelength tunable laser with respect to the external cavity and laser parameters.     

数值模拟980nm锥形半导体激光器输出特性

具有高功率及高亮度激光特性的锥形半导体激光器在激光加工、自由空间通信、医疗等领域具有广泛的应用前景.本文基于广角差分光束传播法(WA-FD-BPM),对980 nm锥形半导体激光器进行了仿真模拟,详细分析了不同结构参数(脊形区刻蚀深度、锥形角度、不同脊形区/锥形区长度比、锥形区刻蚀深度、前腔面反射率)对器件光束质量和P...     

Stable high optical power in quantum well lasers with profiled reflection and tapered structures

A comprehensive model is presented to study quantum well tapered lasers and quantum well stripe lasers with profiled reflectivity output facets and to obtain lateral stability in high power semiconductor laser. Simulation of semiconductor lasers is performed by numerically solving space-dependent coupled partial differential equations for the complex optical forward and backward waves, carrier density distribution and temperature distribution. The coupled equations are solved by finite difference beam propagation method. The effect of nonlinear parameters like Kerr and linewidth enhancement factors, and precise dependence of linewidth enhancement factor and gain factor on the carrier density and temperature are considered in this paper. We use modal reflector in stripe lasers to confine the lateral mode to the stripe centre and provide the stable operation. We also use unpumped window to reduce the facet temperature and improve the catastrophic optical mirror damage level of tapered lasers.     

808 nm大功率半导体激光器腔面膜的制备

采用等离子体辅助电子束蒸发方法在808 nm大功率量子阱半导体激光器腔面设计镀制了HfO₂/SiO₂系前后腔面膜. 用直接测量法测量并比较了各种常用膜系的相对损伤阈值. 增透膜的反射率为12.2％,高反膜的反射率为97.9％. 对于100 μm条宽、1000 μm腔长的条形结构通过器件测量结果是出光功率提高79％、外微分量子效率提高80％、功率效率由没镀膜之前的22.2％提高到镀膜之后的39.8％.     

Narrow spectral linewidth semiconductor lasers

Developments of narrow-linewidth distributed-Bragg-reflection (DBR) and distributed-feed-back (DFB) lasers are described. The design of a narrow-linewidth DBR laser is described in detail. Kl optimization from the viewpoint of narrow-linewidth operation and stable single mode operation is discussed. The linewidth dependences on cavity length, facet reflectivity and threshold current density are investigated. Some approaches to suppressing spatial hole burning in DFB lasers are described.     

InGaAsP/InGaP/GaAs单量子阱激光器工作特性

利用低压-金属有机化学汽相沉积(LP-MOCVD)方法研制出InGaAsP/InGaP/GaAs单量子阱大功率激光器并分析了阈值电流密度、特征温度和外微分量子效率与腔长的关系.     

Recent progress in the development of type II interband cascade lasers

Type-II interband cascade lasers combine the advantage of an interband optical transition with interband tunneling to enable the cascading of type-II quantum well active regions as is done in type-I quantum cascade laser. The relatively high radiative efficiency resulting from interband optical transitions translates into very low-threshold current densities, and when combined with the high quantum efficiency of cascade lasers, this diode laser design has the potential to operate under cw conditions at room temperature with high output power. Experimental results have already demonstrated some of this potential including high differential external quantum efficiency (>600%), high peak output power (6 W/facet at 80 K), high cw power conversion efficiency (>17% at 80 K), and operation at 300 K under pulsed conditions. Recent work aimed at reducing device thermal resistance and increasing cw operating temperature is reviewed including the demonstration of significant reductions in thermal resistance (averaging 25 K/W or 40% for 1-mm-long devices), 80 K cw operation at 3.4 μm with high-power conversion efficiency (23%) and high differential external quantum efficiency (532%), and cw operation up to 214 K.     

Optical feedback cavity ring-down technique for accurate measurement of ultra-high reflectivity

A novel cavity ring-down (CRD) technique, based on the optical feedback effect of Fabry–Perot diode lasers, is developed for accurate reflectivity measurement of highly reflective cavity mirrors. The strong optical feedback, including the direct reflection from the front cavity mirror of a linear ring-down cavity, is re-injected into the oscillator cavity of the diode laser, and large resonant peaks are observed in the ring-down cavity output signals. The diode laser is switched off by a threshold circuit when the amplitude of a resonant peak exceeds a pre-defined threshold. Exponentially decayed signals recorded immediately after switching off the laser are used to determine the cavity decay time. The ultra-high reflectivity of cavity mirrors is measured to be 99.99606% with a reproducibility of 0.00003%. Compared with the previous phase-shift CRD technique, the signal-to-noise ratio of the cavity output signals is improved with an enhancement factor of over 100.     

Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers

Double-state lasing phenomena are easily observed in self-assembled quantum dot (QD) lasers. The effect of inter-level relaxation rate and cavity length on the double-state lasing performance of QD lasers is investigated on the basis of a rate equation model. Calculated results show that, for a certain cavity length, the ground state (GS) lasing threshold current increases almost linearly with the inter-level relaxation lifetime. However, as the relaxation rate becomes slower, the ratio of excited state (ES) lasing threshold current over the GS one decreases, showing an evident exponential behavior. A relatively feasible method to estimate the inter-level relaxation lifetime, which is difficult to measure directly, is provided. In addition, fast inter-level relaxation is favorable for the GS single-mode lasing, and leads to lower wetting layer (WL) carrier occupation probability and higher QD GS capture efficiency and external differential quantum efficiency. Besides, the double-state lasing effect strongly depends on the cavity length.     

Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers

Double-state lasing phenomena are easily observed in self-assembled quantum dot (QD) lasers. The effect of inter-level relaxation rate and cavity length on the double-state lasing performance of QD lasers is investigated on the basis of a rate equation model. Calculated results show that, for a certain cavity length, the ground state (GS) lasing threshold current increases almost linearly with the inter-level relaxation lifetime. However, as the relaxation rate becomes slower, the ratio of excited state (ES) lasing threshold current over the GS one decreases, showing an evident exponential behavior. A relatively feasible method to estimate the inter-level relaxation lifetime, which is difficult to measure directly, is provided. In addition, fast inter-level relaxation is favorable for the GS single-mode lasing, and leads to lower wetting layer (WL) carrier occupation probability and higher QD GS capture efficiency and external differential quantum efficiency. Besides, the double-state lasing effect strongly depends on the cavity length.     

Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser

In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ～1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiO_x dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed.     

Effects of the Facet Reflectivity of a Laser Diode on Fiber Bragg Grating Semiconductor Lasers

Effects of facet reflectivity of a laser diode on the performance of fiber Bragg grating semiconductor lasers are studied experimentally. Facet reflectivity of less than 10-4 is necessary to obtain stable oscillation wavelength.     

大光腔小垂直发散角InGaAs/GaAs/AlGaAs半导体激光器

提出并实现了新型隧道再生耦合大光腔半导体激光器，近场光斑宽度达到1μm，较普通半导体激光器提高了一个数量级，有效地解决了普通半导体激光器由于发光面积狭窄而导致的端面灾变性毁坏和垂直发散角大的问题. 采用低压金属有机物化学气相沉积方法生长了以C和Si分别作为掺杂剂的AlGaAs隧道结、GaAs/InGaAs应变量子阱有源区和新型半导体激光器外延结构，并制备出器件，其垂直发散角为20°，阈值电流密度为277A/cm2，斜率效率在未镀膜时达到0.80W/A. 关键词： 半导体激光器 大光腔 隧道再生     

MOCVD growth of A1GaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications

In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.