Magneto-ballistic transport through micro-structured junctions on a curved two-dimensional electron gas

We investigate theoretically the ballistic transport in a two-dimensional electron gas, which is rolled up as a tube and is micro-structured into a Hall bar. A uniform magnetic field applied to such a curved surface results in a non-uniform perpendicular magnetic field. The bend resistances become asymmetric with respect to the orientation of the magnetic field due to the varying magnetic field along the junction. The resistance asymmetry is strongly affected by corrugation due to the varying mobility along different crystallographic directions. We compare our results with a recent transport measurement.     

Metal–insulator-transition studied by single-electron tunneling

We present measurements of single-electron tunneling in a vertical GaAs/AlGaAs double-barrier resonant-tunneling device with a low emitter doping. The transport spectrum of our sample exhibits a series of differential conductance peaks which experience an exponential shift to higher voltages with magnetic fields beyond a critical magnetic field. We attribute this effect to a metal-insulator transition in our device. A detailed analysis of the temperature-dependence of this effect is shown.     

Magnetothermoelectric transport in modulated and unmodulated graphene

We draw motivation from recent experimental studies and present a comprehensive study of magnetothermoelectric transport in a graphene monolayer within the linear response regime. We employ the modified Kubo formalism developed for thermal transport in a magnetic field. Thermopower as well as thermal conductivity as a function of the gate voltage of a graphene monolayer in the presence of a magnetic field perpendicular to the graphene plane is determined for low magnetic fields (～1 T) as well as high fields (～8 T). We include the effects of screened charged impurities on thermal transport. We find good qualitative and quantitative agreement with recent experimental work on the subject. In addition, in order to analyze the effects of modulation, which can be induced by various means, on the thermal transport in graphene, we evaluate the thermal transport coefficients for a graphene monolayer subjected to a periodic electric modulation in a magnetic field. The results are presented as a function of the magnetic field and the gate voltage.     

Temperature dependence of the compressibility of two-dimensional electron systems with long-range potential fluctuations in the quantum Hall effect regime

The temperature dependence of the compressibility of two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures in the quantum Hall effect regime have been studied both experimentally and theoretically. The compressibility was determined using the capacitance spectroscopy technique and the measurements of a low-frequency electric field penetrating through the 2DES. The measured temperature dependences of the 2DES compressibility are quantitatively described using a model taking into account inhomogeneity of the electron density at a finite temperature. Changes in the chemical potential of the 2DES in the vicinity of even filling factors determined from the capacitive and transport measurements are mutually consistent and agree with the results of finite-temperature calculations.     

调制掺杂ZnSe/BeTe Ⅱ型量子阱结构中的内秉电场和新型带电激子

报道了调制掺杂的ZnSe/BeTe/ZnSe Ⅱ型量子阱(type-Ⅱ QW)在低温(2—5 K)条件下的光致发光(PL),光致发光激发(PLE)和磁性光致发光(magneto-PL)光谱的实验结果.　观察到非掺杂样品的PL有两个很强的主发光峰而掺杂样品只有一个的奇异发光.　PL直线偏振度和PLE的测量结果都表明了这些空间间接型跃迁PL是来自两个异质结界面的贡献,非掺杂样品的两个主发光峰的分离则是起因于QW结构中的内秉电场(built-in electric field).在平行于QW生长方向的强磁场中, 关键词： 光致发光 二维电子气 带电激子 Ⅱ型量子阱     

Bloch electrons in a magnetic field: why does chaos send electrons the hard Way?

We find that a 2D periodic potential, with different modulation amplitudes in the x and y directions, and a perpendicular magnetic field may lead to a transition to electron transport along the direction of stronger modulation and to localization in the direction of weaker modulation. In the experimentally accessible regime we relate this new quantum transport phenomenon to avoided band crossings due to classical chaos.     

Efficacy of proposed 2DEG-based photoconductive antenna using magnetic bias-controlled carrier transport

An externally applied magnetic field was used to induce increased photocarrier transport along the high mobility channel in GaAs/AlGaAs modulation-doped heterostructures (MDH). The terahertz (THz) emission from GaAs/AlGaAs MDH increases with increasing magnetic field, applied parallel to the heterojunction. The THz emission enhancement factors due to the magnetic field in MDH are higher than in undoped GaAs/AlGaAs heterojunction and in bulk SI-GaAs. This demonstrates that properly utilizing the high-mobility channel for carrier transport promises to be a viable design consideration for efficient THz photoconductive antenna (PCA) devices. Moreover, it was observed that for MDH, as well as for an undoped GaAs/AlGaAs heterojunction, the enhancement for one magnetic field direction is greater than the enhancement for the opposite direction. This is in contrast to the symmetric enhancement with magnetic field direction observed in a bulk SI-GaAs. An analysis of photocarrier trajectories under an external magnetic field supports the explanation that the enhancement asymmetry with magnetic field direction in MDH is due to the cycloid motion of electrons as affected by the GaAs/AlGaAs interface.     

High-frequency magneto-oscillations in GaAs/AlGaAs quantum wells

We have observed very high-frequency, highly reproducible magneto-oscillations in modulation doped GaAs/AlGaAs quantum well structures. The oscillations are periodic in an inverse magnetic field (1/B) and their amplitude increases with temperature up to T approximately 700 mK. Being initially most pronounced around the filling factor nu=1/2, they move towards lower nu with increasing T. Front and back-gating data imply that these oscillations require a coupling to a parallel conducting layer. A comparison with existing oscillation models renders no explanation.     

Theoretical aspects of electron transport in modulated structures

In the theory of transport in modulated structures we have studied both transport perpendicular and parallel to the heterojunction interfaces. In perpendicular transport we have investigated models for tunneling through double barriers and find that resonant tunneling and sequential tunneling lead to the same expression for the current as long as the width of the energy distribution of the injected electrons is larger than the width of the resonant level in the diode. We present results for phonon assisted tunneling between two wells in a model which remains valid even when the barrier shrinks and the tunneling probability becomes very high. In parallel transport we show that very satisfactory agreement with extensive measurements of the mobility in modulation doped structures in the whole temperature range from 4 K to 300 K can be obtained if one takes into account the complete quasi-two-dimensional subband structure and all the relevant scattering mechanisms. Having established this we apply this program to systems with more complicated double channel structures, and show how one can tailor the conductivity of a channel in which perpendicular resonant tunneling affects parallel transport.     

Comparative Study of the Two-Dimensional Plasma Excitations in the Heterostructures ZnO/MgZnO,AlAs/AlGaAs,and GaAs/AlGaAs

The plasma oscillations in new advanced two-dimensional electron systems (2DESs) based on the heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs are studied and compared. The relaxation times and the effective masses in samples with various electron densities in these 2DESs are found by microwave plasma spectroscopy. The specific features of the plasma oscillations in the AlAs/AlGaAs quantum wells that are induced by the filling of several valleys with electrons are revealed. The possibility of adjusting a plasmon spectrum via changing the electron concentrations in valleys is demonstrated.     

Supersymmetry-Based Approach to Quantum Particle Dynamics on a Curved Surface with Non-zero Magnetic Field

We present the N=2 supersymmetric formulation for the classical and quantum dynamics of a nonrelativistic charged particle on a curved surface in the presence of a perpendicular magnetic field. For a particle moving on a constant-curvature surface in a constant magnetic field, our Hamiltonian possesses the shape-invariance property in addition. On the surface of a sphere and also on the hyperbolic plane, we exploit the supersymmetry and shape-invariance properties to obtain complete solutions to the corresponding quantum mechanical problems.     

石墨烯量子磁输运性质的电场效应

最近研究发现石墨烯在一维周期性电学或磁学调制势下,其扩散电导率会出现Weiss振荡.本文进一步探索了面外加垂直磁场和面内加横向电场以及一维周期性弱调制电学势的多场耦合作用下,石墨烯的量子磁输运性质,结果表明:Weiss振荡振幅和电导率数值都随着静电场的增加而增加.有趣的是,当电场与磁场的比值达到某一临界值,即β_1=E/(ν_F·B)=1时,输运电导率的Weiss振荡突然消失.这一奇特现象在传统的二维电子气体中是不存在的,因此可以归因于石墨烯载流子外加电磁场的反常相对论性能谱.     

Oscillatory behavior of magneto-optical interband emissions in asymmetric quantum well structures

We report on the oscillatory behavior of the photoluminescence intensity from asymmetric AlGaAs/InGaAs/GaAs quantum well structures in the presence of a perpendicular magnetic field. Two distinct photoluminescence peaks originating from transitions from the ground (e₁) and the first excited (e₂) electronic states to the heavy hole state (hh₁) are observed. The opposite phase of the oscillations shows clearly the competitive process between the transitions from the ground and first excited states. Electron transfer mechanisms cannot explain the origin of these oscillations. The optical oscillations emerge from changes in the effective electron–hole interaction.     

Probing the onset of strong localization and electron–electron interactions with the presence of a direct insulator–quantum Hall transition

We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator–quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron–electron interaction effects for the observed transition in our study.     

Resonant tunneling in weakly coupled GaAs/AlGaAs superlattices in a transverse magnetic field: A probe of electronic distribution function

A method is proposed to get information about carrier distribution function in superlattices and multiple quantum-well structures from the analysis of the vertical transport experiments in a transverse magnetic field. The method was applied to the GaAs/AlGaAs superlattices with wide quantum wells in strong (B=0–7 T) magnetic fields. It was shown that the distribution function of electron is nonequilibrium Boltzmann-like, with electronic temperature T=10–20 K.     

Magnetotransport measurements on overgrown cleaved edge heterostructures in Hall bar geometry

We present new methods to pattern and characterize the overgrown cleaved egde (CE) of GaAs/AlGaAs heterostructures. Four point measurements, which allow a direct measurement of the magnetotransport coefficients ρ_xx and ρ_xy of a two-dimensional electron system on the CE, have been out of reach so far. By means of novel preparation techniques a contacted Hall bar structure can be created on the edge of the cleavage plane. The potential of the new method is first tested on a system which is density modulated in a direction parallel to the current flow due to an underlying GaAs/AlGaAs superlattice. To create a two-dimensional electric modulation we managed to pattern the active area of the Hall bar with periodically arranged lines in the direction perpendicular to the MBE-grown superlattice. The resulting unit cells are reflected in magnetoresistance oscillations associated with the most prominent one-dimensional Fermi contours along x- and y-direction.     

Oscillatory magnetoconductance of narrow quantum waveguides in the presence of inhomogeneous magnetic fields

We present quantum mechanical calculations of magnetoconductance of narrow quantum waveguides in the presence of inhomogeneous perpendicular magnetic field with the use of a model of two coupled tight-binding chains and the transfer-matrix method. The variation of the magnetoconductance with the magnetic flux φ threading one unit cell in the chains for different Fermi energies of the electrons is presented. The effect of magnetically defined ‘barriers’ on the conductance as a function of the Fermi energy is studied in detail for various samples with different magnetically structural configurations. The profile of the conductance depends on the magnitude and the relative direction of the magnetic field piercing the magnetic ‘barriers’. The behaviors of the conductance for the linear-variation and other modulation functions of the magnetic field in a finite region are shown. The abrupt change of the magnetic field in the interface between two adjacent regions causes striking oscillation structures imposed upon the conductance steps. When the magnetic field is varied smoothly (adiabatically) the oscillation structures in the conductance are substantially suppressed and smeared out and finally replaced by the rounded conductance step in the corner. The presence of a magnetically defined cavity in the waveguide leads to pronounced oscillations and the appearance of resonant dip-peak pair in the conductance.     

Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells

Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that some bands in the emission spectrum can be related to radiative electron transitions between resonant and localized impurity states, as well as to the transitions with participation of subband states. The temperature dependence of the equilibrium intraband absorption of terahertz radiation and its modulation in a longitudinal electric field in GaAs/AlGaAs quantum wells has been investigated.     

Transport Properties for a Collisionless Plasma from Finite-Larmor-Radius Equations in General Magnetic Fields

We have take the Vlasov equation in a local system of coordinates defined by the curved magnetic field and we have expanded the distribution function in terms of a small parameter ? which is the ratio of ion Larmor radius to the characteristic length in the direction perpendicular to magnetic field. Assuming an approximation for the distribution function, which is consistent with physical systems, we have obtained transport properties in different orders of approximation taking account of the general heat flux vector. We find that there are additional terms appearing in the components of stresses due to the parallel energy flow term in the heat flux vector.     

石墨烯量子磁输运性质的电场效应

最近研究发现石墨烯在一维周期性电学或磁学调制势下, 其扩散电导率会出现Weiss振荡. 本文进一步探索了面外加垂直磁场和面内加横向电场以及一维周期性弱调制电学势的多场耦合作用下, 石墨烯的量子磁输运性质, 结果表明: Weiss振荡振幅和电导率数值都随着静电场的增加而增加. 有趣的是, 当电场与磁场的比值达到某一临界值, 即时, 输运电导率的Weiss振荡突然消失. 这一奇特现象在传统的二维电子气体中是不存在的, 因此可以归因于石墨烯载流子外加电磁场的反常相对论性能谱. 关键词：石墨烯; 静电场; Weiss振荡; 磁输运性质