新的压电薄膜——Ta2O5

据报道,日本Yasuhiko Nakagawa和Yasuo Gomi用磁控反应直流二极管溅射法将Ta_2O_5,沉积在石英基片上,得到了单晶薄膜,并且首次观察到了这种薄膜的压电现象.用叉指换能器在Ta_2O_5薄膜上成功地激发了声表面波.在Ta_2O_5/熔石英基片上,当薄膜厚度h在hk(=2πh/λ)=1.0时,其机电耦合系数k~2=0.5％,它可与熔石英基片上ZnO薄膜的机电耦合系数相比拟. 利用Ta_2O_5单晶的X射线衍射数据,推断出Ta_2O_5     

退火温度对Ta_2O_5/SiO_2多层反射膜结构和应力特性的影响

介质膜反射镜是星载激光测高仪系统中不可缺少的薄膜元件,其面形质量直接影响探测系统测距的分辨率和精度.本文采用离子束辅助电子束蒸发工艺在石英基底上沉积Ta_2O_5/SiO_2多层反射膜,并在200—600℃的空气中做退火处理.通过X射线衍射、原子力显微镜、分光光度计及激光干涉仪等测试手段,系统研究了退火温度对Ta_2O_5/SiO_2多层反射膜结构、光学性能以及应力特性的影响.结果表明:Ta_2O_5/SiO_2多层反射膜退火后,膜层结构保持稳定,膜层表面粗糙度得到有效改善;反射膜在500—600℃退火后,残余应力由压应力向张应力转变;采用合适的退火温度可以有效释放Ta_2O_5/SiO_2薄膜的残余应力,使薄膜与基底构成的介质膜反射镜具有较好的面形精度.本文的实验结果对退火工艺在介质膜反射镜面形控制技术方面的应用具有重要意义.     

Ta_2O_5薄膜的低能离子辅助蒸镀

用低能氧离子辅助蒸镀技术,制备了一系列Ta_2O_5薄膜.观测了薄膜的微结构,测量了薄膜的光吸收和光散射.实验指出,离子束轰击和基片加热同时进行,能够制得透明而匀均的Ta_2O_5薄膜.     

离子束溅射制备Nb_2O_5、Ta_2O_5和SiO_2薄膜的光学、力学特性和微结构

研究了离子束溅射(IBS)制备的Nb_2O_5、Ta_2O_5和SiO_2薄膜的光学特性、力学特性以及薄膜微结构,分析了辅助离子源电压对薄膜特性的影响,并将电子束蒸发、离子辅助沉积和IBS制备的薄膜进行了对比。研究结果表明,IBS制备的薄膜具有更好的光学特性和微结构,同时具有较大的压应力、硬度和杨氏模量;辅助离子源可以改善薄膜的光学特性,调节薄膜应力和减小薄膜表面粗糙度,但对硬度和杨氏模量的影响相对较小。在不同的辅助离子源电压下,IBS制备的Nb_2O_5应力为-152~-281 MPa,Ta_2O_5的应力为-299~-373 MPa,SiO_2的应力为-427~-577 MPa;在合适的工艺参数下,消光系数可小于10~(-4);薄膜表面平整,均方根粗糙度小于0.2nm。     

离子束溅射原位沉积制备YBa_2Cu_3O_(7-δ)超导薄膜

利用离子束溅射技术在ZrO_2衬底上原位制备出YBa_2Cu_3O_(7-δ)高温超导薄膜。薄膜的零电阻温度T_(co)=88K,临界电流密度J_c(77K)=5.2×10~5A/cm~2用X射线衍射和扫描电镜分析了薄膜特性。本文结果表明用离子束溅射法可原位沉积制备出高质量的超导薄膜。     

用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO_2薄膜

采用了一种用离子束增强沉积从V2O5粉末直接制备VO2薄膜的新方法,将纯度为997%的V2O5粉末压成溅射靶,在用Ar离子束溅射的同时,用氩氢混合束对沉积膜作高剂量离子注入,使沉积膜中V2O5的V—O键断裂,进而被注入的氢还原,退火后获得热电阻温度系数(TCR)高达4%的VO2薄膜.高剂量的氩氢混合束注入对薄膜引入应力,使薄膜的转换温度降低、电阻温度曲线斜率变大,是薄膜TCR增大的原因 关键词： 离子束增强沉积 VO2薄膜 热电阻温度系数     

离子束溅射制备Nb2O5光学薄膜的特性研究

研究了离子束溅射(IBS)制备的Nb₂O₅薄膜的光学特性、应力、薄膜微结构等特性,系统地分析了辅助离子源的离子束能量和离子束流对薄膜特性的影响.结果显示,在辅助离子源不同参数情况下,折射率在波长550 nm处为2.310—2.276,应力值为-281—-152 MPa.在合适的工艺参数下,消光系数可小于10^-4,薄膜具有很好的表面平整度.与用离子辅助沉积(IAD)制备的薄膜相比,IBS制备的薄膜具有更好的光学特性和薄膜微结构. 关键词： 2O₅薄膜')" href="#">Nb₂O₅薄膜 离子束溅射 光学特性 应力     

Influence of coating material on laser damage threshold of TiO_2 films

The optical property,structure,surface properties(roughness and defect density)and laser-induced dam- age threshold(LIDT)of TiO_2 films deposited by electronic beam(EB)evaporation of TiO_2(rutile),TiO_2 (anatase)and TiO_2 Ta_2O_5 composite materials are comparatively studied.All films show the polycrys- talline anatase TiO_2 structure.The loose sintering state and phase transformation during evaporating TiO_2 anatase slice lead to the high surface defect density,roughness and extinction coefficient,and low LIDT of films.The TiO_2 Ta_2O_5 composite films have the lowest extinction coefficient and the highest LIDT among all samples investigated.Guidance of selecting materials for high LIDT laser mirrors is given.     

Laser-induced damage threshold in n-on-1 regime of Ta_2O_5 films at 532,800,and 1064 nm

Ta_2O5 films were prepared with conventional electron beam evaporation and annealed in O_2 at 673 K for 12h.Laser-induced damage thresholds(LIDTs)of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly,and then were performed at 532,800,and 1064 nm in n-on-1 regime,respectively- The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm.In addition,in n-on-1 regime,the LIDT increased with the increase of wavelength.Furthermore, both the optical property and LIDT of Ta_2O_5 films were influenced by annealing in O_2.     

Influences of SiO_2 protective layers and annealing on the laser-induced damage threshold of Ta_2O_5 films

Ta_2O_5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition.The effects of SiO_2 protective layers and annealing on the laser-induced damage threshold(LIDT)of the films are investigated.The results show that SiO_2 protective layers exert little influence on the electric field intensity(EFI)distribution,microstructure and microdefect density but increase the absorption slightly. Annealing is effective on decreasing the microdefect density and the absorption of the films.Both SiO_2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT.Moreover,the maximal LIDT of Ta_2O_5 films is achieved by the combination of SiO_2 protective layers and annealing.     

A Reflective Inorganic All-Thin-Film Flexible Electrochromic Device with a Seven-Layer Structure

A reflective electrochromic device is fabricated on a 10 cm×10 cm flexible PI/Al substrate using magnetron sputtering. The device has a complementary all-thin-film structure and consists of seven layers. Indium tin oxide(ITO) acts as a transparent electrode deposited on the top, meanwhile, an aluminum(Al) film is adopted as an inter-counter bottom electrode and provides high reflectance. Tungsten oxide(WO_3) is used as the main electrochromic layer and nickel oxide(NiO) acts as the complementary electrochromic layer. Lithium niobate(LiNbO_3) is applied as a Li~+ion conductor layer. Especially, in the seven-layer structure, two tantalum oxides(Ta_2O_5) are added as transition layers to prevent Li+escaping from LiNbO_3 when the potential is not applied on the device. When the device is in an electrochromic process, both Ta_2O_5 provide excellent conductivity for Li~+ions and act as the dielectric of electrons. The complementary device with structure Al/NiO/Ta_2O_5/LiNbO_3/Ta_2O_5/WO_3/ITO exhibits good optical properties, and the reflectance modulation reaches up to 55% measured by a spectrophotometer in the range of 400–1600 nm. The cyclic stability of the electrochromic device is investigated. The results indicate that the charge density involved in the electrochromic process decreases and the electrochromic response time increases with the cycle number because of the Li~+ insertion in WO_3.     

离子束溅射沉积制备高JcYBa2Cu3O7—δ超导薄膜

本文报道应用离子束溅射沉积制备高 T_c 高 J_c YBa_2Cu_3O_(7-δ)超导薄膜.较详细地考察了影响薄膜组份比和晶粒取向的主要因素.实验表明采用本文提出的组合溅射靶可方便而又精确地调节薄膜 Y、Ba、Cu 组份比.详细描述了获得高度取向薄膜的工艺条件,获得了零电阻温度 T_(c0)=88～90.5K 和临界电流密度 J_c=1.5×10~3A/cm~2(77K)的 YBa_2Cu_3O_(7-δ)超导薄膜.     

离子束成膜技术

本文简要介绍了几类离子束成膜技术:离子束沉积和外延;离子束辅助沉积和离子蒸发沉积;集团离子束沉积;离子束溅射沉积。     

Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity

The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry–Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta_2O_5/SiO_2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta_2O_5/SiO_2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.     

氮自掺杂Ta_2O_5微球制备及其光催化性能研究

我们采用水热法合成了具有可见光吸收的非金属自掺杂N-Ta_2O_5多孔微球光催化剂.并通过X射线粉末衍射仪(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、紫外可见分光光度计(UV-vis)等多种表征手段对自掺杂N-Ta_2O_5的晶体结构、形貌、组分等进行了测试分析.XRD结果表明,Ta N可以在HF溶液中完全氧化为Ta_2O_5,N掺杂可以通过N与O原子的轨道杂化使Ta_2O_5的带隙从4.0 eV降低为2.2 eV,从而增强其可见光吸收.高催化活性的N-Ta_2O_5可通过调控其结晶度来实现.     

离子束成膜技术

本文简要介绍了几类离子柬成膜技术：离子束沉积和外延；离子束辅助沉积和离子蒸发沉积；集团离子束沉积；离子束溅射沉积。     

离子束增强沉积制备p型氧化锌薄膜及其机理研究

采用离子束增强沉积方法在Si和SiO₂/Si衬底上制备In-N共掺杂ZnO薄膜(INZO)，溅射靶是用ZnO和2 atm% In₂O₃粉体均匀混合并压制而成，在氩离子溅射ZnO靶的同时，氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向，并且为p型导电，电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火，对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析. 关键词： 氧化锌薄膜 p型掺杂 离子束增强沉积     

五氧化二钽薄膜的光学特性和应用

研究结果表明,Ta_2O_5薄膜是一种透明性良好、折射率较高、膜层结构致密、化学性稳定、机械性牢固和强激光不易损伤的优质光学薄膜。文中给出了Ta_2O_5膜层的光谱透光率T_(?)反射率R_λ和折射率n_λ的特性曲线。作为应用,列举了Ta_2O_5薄膜在可见光宽带增透和激光高反射中的应用情况。     

氧化物薄膜的离子束溅射沉积

用离子束溅射沉积的方法制备的TiO_2、ZrO_2薄膜的光吸收损耗明显降低,对其折射率、光吸收和抗激光损伤阈值等特性进行了分析.     

Ta_2O_5-PMMA复合栅绝缘层对OFETs性能的影响（英文）

选用五氧化二钽(Ta_2O_5)-聚甲基丙烯酸甲酯(PMMA)复合材料作为栅绝缘层制备了并五苯有机场效应晶体管(OFETs)。通过在Ta_2O_5表面旋涂一层PMMA可以降低栅绝缘层的表面粗糙度,增大其场效应晶体管的迁移率。研究了厚度在20~60 nm范围内的PMMA对复合绝缘层表面形貌、粗糙度以及器件电学性能的影响。结果表明,当PMMA厚度为40 nm时,器件的电学性能最佳。与单一的Ta_2O_5栅绝缘层器件相比,其场效迁移率由4.2×10~(-2)cm~2/(V·s)提高到0.31 cm~2/(V·s);栅电压增加到-20 V时,开关电流比由2.9×10~2增大到2.9×10~5。