Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

It is shown that (Ga,Mn)As layers formed by Mn⁺ ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200–300 mJ/cm² feature the properties of the p-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions (~10¹⁵ cm^–2) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn⁺ ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.     

Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

Using Mn⁺ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn⁺ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at T_c 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples.     

EPR/FMR Investigation of Mn-Doped SiCN Ceramics

SiCN magnetic ceramics doped with Mn²⁺ ions were synthesized at the pyrolysis temperature of 1,100° C, using CERASET™ as liquid polymer precursor and polymer manganese(II) acetylacetonate as dopant, and investigated by electron paramagnetic resonance (EPR)/ferromagnetic resonance (FMR) technique. The predominant source of ferromagnetism in SiCN samples doped with Mn ions, as synthesized here, is the ensemble of ferromagnetic nanoparticles of Mn₅Si₃C _x incorporated into the amorphous SiC/Mn structure. The fluctuation of magnetization due to ferromagnetic Mn₅Si₃C_x particles significantly broadens the EPR lines at the phase-transition temperature (363 K). This is the first fabrication of a SiCN/Mn ceramic, which exhibits room-temperature ferromagnetism.     

The important role of Mn in the room-temperature ferromagnetism of Mn-doped GaN films

Mn-doped GaN films (Ga_1−xMn_xN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga_1−xMn_xN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn³⁺ due to the thermal treatment. Mn³⁺, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn³⁺ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn³⁺ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase Mn_xGa_y formation.     

Theoretical study of small clusters of manganese-doped gallium oxide: Mn(GaO)n and Mn2(GaO)n with n?=?1?7

Structures, electronic and magnetic properties of Mn and Mn₂ doped stoichiometric (GaO) _n clusters with n = 1−7 are studied in the framework of density functional theory. Doping of a Mn atom is found to be energetically favorable in (GaO) _n clusters and the equilibrium configurations are found to be determined by the metal–oxygen interactions. Mn prefers to maximize the number of Mn–O bonds by selecting a Ga site in the cluster which increases its coordination with oxygen. Addition of a Mn atom in Mn(GaO) _n clusters results into the ground state to be either ferromagnetic or antiferromagnetic depending on the Mn coordination number and the Mn–Mn bond-length in the given Mn₂(GaO) _n cluster.     

Recrystallization behavior of high-dose Mn+-implanted GaAs

Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn⁺-implanted GaAs. A high dose of Mn⁺-ions (>10¹⁵ cm^-2) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 °C was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation (>1.6×10¹⁵ cm^-2) and annealing. The size of the recrystallized crystallites decreased with increasing Mn⁺ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses (>7×10¹⁶ cm^-2), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals. Received: 5 March 2002 / Accepted: 29 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-21/658-30734, E-mail: jqwang@mail.sitp.ac.cn     

Oxygen vacancy and dopant concentration dependent magnetic properties of Mn doped TiO2 nanoparticle

Mn doped TiO₂ nanoparticles are synthesized by sol–gel method. Incorporation of Mn shifts the diffraction peak of TiO₂ to lower angle. The position and width of the Raman peak and photoluminescence intensity of the doped nanoparticles varies with oxygen vacancy and Mn doping level. The electron spin resonance spectra of the Mn doped TiO₂ show peaks at g = 1.99 and 4.39, characteristic of Mn²⁺ state. Reduction in the emission intensity, on Mn doping, is owing to the increase of nonradiative oxygen vacancy centers. Mn doped TiO₂, with 2% Mn, shows ferromagnetic ordering at low applied field. Paramagnetic contribution increases as Mn loading increases to 4% and 6%. Temperature dependent magnetic measurement shows a small kink in the ZFC curve at about 40 K, characteristic of Mn₃O₄. The ferromagnetic ordering is possibly due to the interaction of the neighboring Mn²⁺ ions via oxygen vacancy (F⁺ center). Increase in Mn concentration increases the fraction of Mn₃O₄ phase and thereby increases the paramagnetic ordering.     

Buffer layer ZnO-assistant fabrication of c-axis GaN films by using pulsed laser deposition on Si(111) substrate: annealing effects in ammonia ambience

ZnO buffer layers have been used to fabricate GaN thin films by using pulsed laser deposition on Si (111) substrates. c-axis GaN thin films were obtained by annealing in NH₃ atmosphere at 950°C for 15 min. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and atomic force microscopy (AFM) have been used for the characterizations of the crystalline quality, composition, and surface morphology of the films. The annealing in ammonia (NH₃) atmosphere markedly affects the preparation of GaN films and the least annealing time is 15 min under our experimental conditions. The mechanism of the effects of the ZnO buffer layers was studied. In the beginning, Zn–O bonds are destroyed in the interface of the films; a few O and Zn atoms depart from their positions, while N and Ga atoms fill in the empty positions and form a hexagonal structure of a special component. Many bonds (such as Ga–O bonds, Zn–N bonds) existed then. The number of Zn–O bonds decreases and the number of Ga–N bonds increases in the films with increasing of the annealing time. Many other bonds (such as Ga–O bonds, Zn–N bonds) also decreased and more Ga–N bonds formed with annealing time increasing. After having been annealed for 15 min under our experimental conditions, the quality of the hexagonal structure GaN films was markedly improved by the destroying of the Zn–O bonds during high-temperature annealing.     

Room-temperature ferromagnetism in N+-implanted ZnO:Mn thin films

Mn–N co-doped ZnO films with wurtzite structure were fabricated by RF magnetron sputtering together with the ion-implantation technique. Then a post-annealing at 650 °C for 10 min in a N₂ atmosphere was performed to activate the implanted N⁺ ions and recover the crystal quality, and a p-type ZnO:Mn–N film with a hole concentration of about 2.1×10¹⁶ cm^?3 was obtained. It is found that the Mn mono-doped ZnO film only exhibits paramagnetic behavior, while after N⁺-implantation, it shows ferromagnetism at 300 K, and the magnetization of the ZnO:Mn–N films can be further enhanced by thermal annealing due to the activation of the N acceptors. Our experimental results confirm that the codoping N acceptors are favorable for ferromagnetic ordering of Mn²⁺ ions in ZnO, which is consistent with the recent theoretical calculations.     

Optical and EPR spectroscopy of manganese ions in Sr3Ga2Ge4O14 crystals

Results of investigations of the spectroscopic properties of manganese-activated single crystals of Sr₃Ga₂Ge₄O₁₄ by the methods of optical and EPR spectroscopy are reported. It is shown that magnagese activator ions form substitutional centers Mn³⁺ and Mn²⁺ in 1a-octahedral positions of the Sr₃Ga₂Ge₄O₁₄ lattice. Changes in the opticla properties of Sr₃Ga₂Ge₄O₁₄: Mn after vacuum thermal annealing are attributed to charge transfer of some of the manganese ions (Mn³⁺→Mn²⁺). The relationship between the spectroscopical properties of Mn²⁺ ions and the crystallochemical structure of the system are discussed. I. Franko L’vov State University, 50, Dragomanov St., L’vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 6, pp. 779–783, November–December, 1997.     

Magnetic properties of LiNi<Subscript>0.5</Subscript>Mn<Subscript>0.47</Subscript>Al<Subscript>0.03</Subscript>O<Subscript>2</Subscript> as positive electrode for Li-ion batteries

The layered LiNi_0.5Mn_0.47Al_0.03O₂ was synthesized by wet chemical method and characterized by X-ray diffraction and analysis of magnetic measurements. The powders adopted the α-NaFeO₂ structure. This substitution of Al for Mn promotes the formation of Li(Ni_0.47²⁺Ni_0.03³⁺Mn_0.47⁴⁺Al_0.03³⁺)O₂ structures and induces an increase in the average oxidation state of Ni, thereby leading to the shrinkage of the lattice unit cell. The concentration of antisite defects in which Ni²⁺ occupies the (3a) Li lattice sites in the Wyckoff notation has been estimated from the ferromagnetic Ni²⁺(3a)–Mn⁴⁺(3b) pairing observed below 140 K. The substitution of 3% Al for Mn reduces the amount of antisite defects from 7% to 6.4–6.5%. The analysis of the magnetic properties in the paramagnetic phase in the framework of the Curie–Weiss law agrees well with the combination of Ni²⁺ (S = 1), Ni³⁺ (S = 1/2) and Mn⁴⁺ (S = 3/2) spin-only values. Delithiation has been made by the use of K₂S₂O₈. According to this process, known to be softer than the electrochemical one, the nickel ions in the (3b) sites are converted into Ni⁴⁺ in the high spin configuration, while Ni²⁺(3a)–Mn⁴⁺(3b) ferromagnetic pairs remain, as the Li⁺(3b) ions linked to the Ni²⁺(3a) ions in the antisite defects are not removed. The results show that the antisite defect is surrounded by Mn⁴⁺ ions, implying the nonuniform distribution of the cations in agreement with previous NMR and neutron experiments.     

EPR study on the La2/3Ca1/3Mn1−x Cu x O y system

The interaction between Mn and Cu ions is studied by measuring the resistance and electron paramagnetic resonance (EPR) at different temperatures of the Cu-doped compound La_2/3Ca_1/3Mn_1−xCu_xO_y. A new transition inR-T curve and substantial enhancement in magnetoresistance are induced by the substitution of Mn ions by Cu ions. The EPR measurement shows that two resonance signals appear at temperature lower than the spin-ordering temperature of Mn ions. A tentative interpretation for the observed phenomena is proposed by considering the interaction between the Cu/Mn ions besides the Mn³⁺/Mn⁴⁺ ions.     

Magnetic and luminescent properties of manganese-doped ZnSe crystals

Magnetic and photoluminescent properties of manganese-doped ZnSe crystals with different impurity concentrations were investigated. The concentration of Mn²⁺ ions in ZnSe crystals has been varied from 0.01 to 0.3 at%. Magnetic and photoluminescent studies have confirmed the introduction of Mn in ZnSe crystals. It was established that Mn²⁺ ions are responsible for the emission bands with maximum at 616 nm and 633 nm, which correspond to ⁴T₂→⁶A₁ and ⁴T₁→⁶A₁ intracentre transitions of Mn²⁺ ions respectively. It was found that the concentration quenching of the photoluminescent bands is associated with Mn²⁺ ions, which are due to the formation of Mn–Mn clusters. Magnetic properties studies have shown that at high doping levels the manganese atoms form Mn–Mn clusters in ZnSe. From the temperature dependence of magnetic susceptibility of ZnSe:Mn crystals that follows the Curie–Weiss law, it was possible to estimate the Curie–Weiss temperature Θ(x) and the effective Mn–Mn antiferromagnetic exchange constant (J₁).     

Lattice, magnetic and transport properties in antiperovskite compounds

The temperature-dependent magnetization, lattice, and transport properties of Mn₃Sn_1−xGe_xC (0≤x≤0.5) compounds are systematically investigated. The Mn–Mn atomic distance decreases as Ge content is increased, and the transition temperature from ferromagnetic (or ferrimagnetic) to paramagnetic state decreases too. Mn₃SnC has a large magnetovolume effect (MVE). However, Ge-doping in Mn₃SnC gradually reduces the MVE, till the MVE disappears. Whether there is an abnormal lattice change or not, there always exists an anomalous increase in resistivity near the magnetic phase transition point with decreasing temperature.     

Effect of electron-beam irradiation on the magnetic properties of Ga1−xMnxAs thin films grown on GaAs (100) substrates

The effect of electron-beam irradiation on the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (T_c) of the annealed (Ga_0.933Mn_0.067)As thin films was 160 K. The T_c value for the as-grown (Ga_0.933Mn_0.067)As thin films drastically decreased with increasing electron-beam current. This significant decrease in the T_c value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation.     

Mössbauer study of 57Fe in GaAs and GaP following 57Mn+ implantation

Ion implantation provides a precise method of incorporating dopant atoms in semiconductors, provided lattice damage due to the implantation process can be annealed and the dopant atoms located on regular lattice sites. We have undertaken ⁵⁷Fe emission Mössbauer spectroscopy measurements on GaAs and GaP single crystals following implantation of radioactive ⁵⁷Mn^?+? ions, to study the lattice sites of the implanted ions, the annealing of implantation induced damage and impurity–vacancy complexes formed. The Mössbauer spectra were analyzed with four spectral components: an asymmetric doublet (D1) attributed to Fe atoms in distorted environments due to implantation damage, two single lines, S1 assigned to Fe on substitutional Ga sites, and S2 to Fe on interstitial sites, and a low intensity symmetric doublet (D2) assigned to impurity–vacancy complexes. The variations in the extracted hyperfine parameters of D1 for both materials at high temperatures (T?> 400 K) suggests changes in the immediate environment of the Fe impurity atoms and different bonding mechanism to the Mössbauer probe atom. The results show that the annealing of the radiation induced damage is more prominent in GaAs compared to GaP.     

Influence of annealing temperature on structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method

Thin films of Zn_1−xMn_xO (x=0.01) diluted magnetic semiconductor were prepared on Si (1 0 0) substrates by the sol-gel method. The influence of annealing temperature on the structural, optical and magnetic properties was studied by X-ray diffraction (XRD), atom force microscopy (AFM), photoluminescence (PL) and SQUID magnetometer (MPMS, Quantum Design). The XRD spectrum shows that all the films are single crystalline with (0 0 2) preferential orientation along c-axis, indicating there are not any secondary phases. The atomic force microscopy images show the surfaces morphologies change greatly with an increase in annealing temperature. PL spectra reveal that the films marginally shift the near band-edge (NBE) position due to stress. The magnetic measurements of the films using SQUID clearly indicate the room temperature ferromagnetic behavior, and the Curie temperature of the samples is above room temperature. X-ray photoelectron spectroscopy (XPS) patterns suggest that Mn²⁺ ions were successfully incorporated into the lattice position of Zn²⁺ ions in ZnO host. It is also found that the post-annealing treatment can affect the ferromagnetic behavior of the films effectively.     

Mn和N共掺ZnO稀磁半导体薄膜的研究

使用对Zn₂N₃:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μ_B—0.61 μ_B.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好. 关键词： 磁性半导体 受主掺杂 空穴媒介的铁磁性     

Bulk Sn1−xMnxO2 magnetic semiconductors without room-temperature ferromagnetism

Polycrystalline Sn_1−xMn_xO₂ (0≤x≤0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x=0.01, 0.03, 0.05) undergo paramagnetic to ferromagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferromagnetic ordering to the total Mn ions decreases.     

Magnetic,electrical transport and electron spin resonance studies of Fe-doped manganite LaMn0.7Fe0.3O3+δ

We have investigated the magnetic, electrical transport and electron spin resonance (ESR) properties of polycrystalline Fe-doped manganite LaMn_0.7Fe_0.3O_3+δ prepared by sol–gel method. A typical cluster-glass feature is presented by DC magnetization and AC susceptibility measurements and a sharp but shallow memory effect was observed. Symmetrical Lorentzian lines of the Mn/Fe spectra were detected above 120 K, where the sample is a paramagnetic (PM) insulator. When the temperature decreases from 120 K, magnetic clusters contributed from ferromagnetic (FM) interaction between Mn³⁺ and Mn³⁺/Fe³⁺ ions develop and coexist with PM phase. At lower temperature, these FM clusters compete with antiferromagnetic (AFM) ones between Fe³⁺ ions, which are associated with a distinct field-cooled (FC) effect in characteristic of cluster-glass state.