高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响

研究了高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响.随着栅介质介电常数增大,肖特基源漏(SBSD) SOI MOSFET的开态电流减小,这表明边缘感应势垒降低效应(FIBL)并不是对势垒产生影响的主要机理.源端附近边缘感应势垒屏蔽效应(FIBS)是SBSD SOI MOSFET开态电流减小的主要原因.同时还发现,源漏与栅是否对准,高k栅介质对器件性能的影响也不相同.如果源漏与栅交叠,高k栅介质与硅衬底之间加入过渡层可以有效地抑制FIBS效应.如果源漏偏离栅,采用高k侧墙并结合堆叠栅结构,可以提高驱动电流.分析结果表明,来自栅极的电力线在介电常数不同的材料界面发生两次折射.根据结构参数的不同可以调节电力线的疏密,从而达到改变势垒高度,调节驱动电流的目的. 关键词： k栅介质')" href="#">高k栅介质 肖特基源漏(SBSD) 边缘感应势垒屏蔽(FIBS) 绝缘衬底上的硅(SOI)     

一个圆柱形双栅场效应晶体管的物理模型

圆柱形双栅场效应晶体管(CSDG MOSFET)是在围栅MOSFET器件增加内部控制栅而形成,与双栅、三栅及围栅MOSFET器件相比,圆柱形双栅MOSFET提供了更好的栅控性能和输出特性.本文通过求解圆柱坐标系下的二维泊松方程,得到了圆柱形双栅MOSFET的电势模型;进一步对反型电荷沿沟道积分,建立其漏源电流模型.分析讨论了圆柱形双栅MOSFET器件的电学特性,结果表明:圆柱形双栅MOSFET外栅沿沟道的最小表面势和器件的阈值电压随栅介质层介电常数的增大而减小,其漏源电流和跨导随栅介质层介电常数的增大而增大;随着器件参数的等比例缩小,沟道反型电荷密度减小,其漏源电流和跨导也减小.     

环栅肖特基势垒金属氧化物半导体场效应管漏致势垒降低效应研究

结合环栅肖特基势垒金属氧化物半导体场效应管(MOSFET)结构, 通过求解圆柱坐标系下的二维泊松方程得到了表面势分布, 并据此建立了适用于低漏电压下的环栅肖特基势垒NMOSFET阈值电压模型.根据计算结果, 分析了漏电压、沟道半径和沟道长度对阈值电压和漏致势垒降低的影响, 对环栅肖特基势垒MOSFET器件以及电路设计具有一定的参考价值. 关键词： 环栅肖特基势垒金属氧化物半导体场效应管 二维泊松方程 阈值电压模型 漏致势垒降低     

非对称Halo异质栅应变Si SOI MOSFET的二维解析模型

为了进一步提高深亚微米SOI (Silicon-On-Insulator) MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) 的电流驱动能力, 抑制短沟道效应和漏致势垒降低效应, 提出了非对称Halo异质栅应变Si SOI MOSFET. 在沟道源端一侧引入高掺杂Halo结构, 栅极由不同功函数的两种材料组成. 考虑新器件结构特点和应变的影响, 修正了平带电压和内建电势. 为新结构器件建立了全耗尽条件下的表面势和阈值电压二维解析模型. 模型详细分析了应变对表面势、表面场强、阈值电压的影响, 考虑了金属栅长度及功函数差变化的影响. 研究结果表明,提出的新器件结构能进一步提高电流驱动能力, 抑制短沟道效应和抑制漏致势垒降低效应, 为新器件物理参数设计提供了重要参考. 关键词： 非对称Halo 异质栅 应变Si 短沟道效应     

6H-SiC肖特基源漏MOSFET的模拟仿真研究

给出了一种新型SiC MOSFET——6H-SiC肖特基源漏MOSFET.这种器件结构制备工艺简单，避 免了长期困扰常规SiC MOSFET的离子注入工艺难度大、退火温度高、晶格损伤大，注入激活 率低等问题.分析了该器件的电流输运机理，并通过MEDICI模拟，给出了SiC肖特基源漏MOSF ET伏安特性以及其和金属功函数、栅氧化层厚度和栅长关系. 关键词： 碳化硅 肖特基接触 MOSFET 势垒高度     

高场应力及栅应力下AlGaN/GaN HEMT器件退化研究

采用不同的高场应力和栅应力对AlGaN/GaN HEMT器件进行直流应力测试,实验发现：应力后器件主要参数如饱和漏电流,跨导峰值和阈值电压等均发生了明显退化,而且这些退化还是可以完全恢复的;高场应力下,器件特性的退化随高场应力偏置电压的增加和应力时间的累积而增大;对于不同的栅应力,相对来说,脉冲栅应力和开态栅应力下器件特性的退化比关态栅应力下的退化大.对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应 关键词： AlGaN/GaN HEMT器件 表面态(虚栅) 势垒层陷阱 应力     

高k栅介质应变Si SOI MOSFET的阈值电压解析模型

在结合应变Si,高k栅和SOI结构三者的优点的基础上,提出了一种新型的高k栅介质应变Si全耗尽SOI MOSFET结构.通过求解二维泊松方程建立了该新结构的二维阈值电压模型,在该模型中考虑了影响阈值电压的主要参数.分析了阈值电压与弛豫层中的Ge组分、应变Si层厚度的关系.研究结果表明阈值电压随弛豫层中Ge组分的提高和应变Si层的厚度增加而降低.此外,还分析了阈值电压与高k栅介质的介电常数和应变Si层的掺杂浓度的关系.研究结果表明阈值电压随高k介质的介 关键词： 应变Si k栅')" href="#">高k栅 短沟道效应 漏致势垒降低     

改进型异质栅对深亚微米栅长碳化硅MESFET特性影响

基于器件物理分析方法,结合高场迁移率、肖特基栅势垒降低、势垒隧穿等物理模型, 分析了改进型异质栅结构对深亚微米栅长碳化硅肖特基栅场效应晶体管沟道电势、 夹断电压以及栅下电场分布的影响.通过与传统栅结构器件特性的对比表明, 异质栅结构在碳化硅肖特基栅场效应晶体管的沟道电势中引入了多阶梯分布,加强了近源端电场; 另一方面,相比于双栅器件,改进型异质栅器件沟道最大电势的位置远离源端, 因此载流子在沟道中加速更快,在一定程度上屏蔽了漏压引起的电势变化,更好抑制了短沟道效应. 此外,研究了不同结构参数的异质栅对短沟道器件特性的影响,获得了优化的设计方案, 减小了器件的亚阈值倾斜因子.为发挥碳化硅器件在大功率应用中的优势,设计了非对称异质栅结构, 改善了栅电极边缘的电场分布,提高了小栅长器件的耐压.     

新型SOANN埋层SOI器件的自加热效应研究

本文提出了一个新型的SOI埋层结构SOANN (silicon on aluminum nitride with nothing),用AlN代替传统的SiO₂材料,并在SOI埋氧化层中引入空洞散热通道. 分析了新结构SOI器件的自加热效应.研究结果表明:用AlN做为SOI埋氧化层的材料, 降低了晶格温度,有效抑制了自加热效应.埋氧化层中的空洞,可以进一步提供散热通道, 使埋氧化层的介电常数下降,减小了电力线从漏端通过埋氧到源端的耦合, 有效抑制了漏致势垒降低DIBL(drain Induced barrier lowering)效应.因此,本文提出的新型SOANN结构可以提高SOI器件的整体性能,具有优良的可靠性.     

小尺寸MOSFET隧穿电流解析模型

基于表面势解析模型，通过将多子带等效为单子带，建立了耗尽/反型状态下小尺寸MOSFET直接隧穿栅电流解析模型.模拟结果与自洽解及实验结果均符合较好，表明此模型不仅可用于SiO₂、也可用于高介电常数(k)材料作为栅介质以及叠层栅介质结构MOSFET栅极漏电特性的模拟分析，计算时间较自洽解方法大大缩短，适用于MOS器件电路模拟. 关键词： 隧穿电流 MOSFET 量子机理 解析模型     

First Observation of the nu(17)-nu(4) Difference Bands of Diborane (10)B(2)H(6) and (11)B(2)H(6)

An analysis of the nu(17)-nu(4) difference bands near 800 cm(-1) of two isotopic species, (10)B(2)H(6) and (11)B(2)H(6), of diborane has been carried out using infrared spectra recorded with a resolution of ca. 0.003 cm(-1). In addition, the nu(17) band of (10)B(2)H(6) has been recorded and assigned. Since this band in (11)B(2)H(6) had already been studied (R. L. Sams, T. A. Blake, S. W. Sharpe, J.-M. Flaud, and W. J. Lafferty, J. Mol. Spectrosc. 191, 331-342 (1998)), it was possible to derive precise energy levels and Hamiltonian constants for the 4(1) vibrational states of both isotopic species. Copyright 2000 Academic Press.     

Rovibrational Intensities of the (00(0)3) <-- (10(0)0) Dyad Absorption Bands of (12)C(16)O(2)

Absolute line intensities of (12)C(16)O(2) are experimentally measured for the first time for the (00(0)3)(I) <-- (10(0)0)(II) band at 5687.17 cm(-1) and the (00(0)3)(I) <-- (10(0)0)(I) band at 5584.39 cm(-1). The spectra were obtained using a Bomem DA8 Fourier transform spectrometer and a 25-m base-path White cell at NASA-Ames Research Center. The rotationless bandstrengths at a temperature of 296 K and the Herman-Wallis parameters are S(0)(vib) = 6.68(30) x 10(-25) cm(-1)/(molecule/cm(2)); A(1) = 1.4(9) x 10(-4), and A(2) = -1.1(5) x 10(-5) for the (00(0)3)(I) <-- (10(0)0)(II) band and S(0)(vib) = 6.07(22) x 10(-25) cm(-1)/(molecule/cm(2)); A(1) = 5.2(1.5) x 10(-4) and A(2) = -4.0(7) x 10(-5) for the (00(0)3)(I) <-- (10(0)0)(I) band.     

The 2(3)Delta(g) State of (7)Li(2)

Using pulsed perturbation-facilitated optical-optical double resonance (PFOODR) spectroscopy, the 2(3)Delta(g) state of (7)Li(2) (electronic configuration (varsigma(g)2s) (4ddelta(g)), effective principal quantum number n* = 4.101) has been observed and assigned. Molecular constants and a RKR potential energy curve were obtained. The major molecular constants are Copyright 2000 Academic Press.     

Theoretical Study of the Collision-Induced Double Transition CO(2) (nu(3) = 1) + N(2) (nu(1) = 1) <-- CO(2) (nu(3) = 0) + N(2) (nu(1) = 0) at 296 K

A procedure is presented for the calculation of the double vibrational collision-induced absorption CO(2) (nu(3) = 1) + N(2) (nu(1) = 1) <-- CO(2) (nu(3) = 0) + N(2) (nu(1) = 0) on the basis of quantum lineshapes computed using an isotropic potential and dipole-induced dipole functions. The linestrengths and energies of the vibration-rotation transitions are treated explicitly for N(2), utilizing the HITRAN database for CO(2). The theoretical absorption profile is compared to recent experimental results. By narrowing the width of the individual lines contributing to the overall absorption profile relative to their values determined for N(2)-N(2) collision-induced absorption, excellent agreement between theory and experiment is obtained. Copyright 2000 Academic Press.     

The v(1)+v(3) Bands of the (16)O(17)O(16)O and (16)O(16)O(17)O Isotopomers of Ozone

Using 0.002 cm(-1) resolution Fourier transform absorption spectra of an (17)O enriched ozone sample, an extensive analysis of the v(1)+v(3) bands of the (16)O(17)O(16)O and (16)O(16)O(17)O isotopomers of ozone has been performed for the first time. The experimental rotational levels of the (101) vibrational states were satisfactorily reproduced using a Hamiltonian matrix that takes into account the observed rovibrational resonances. More precisely, for (16)O(17)O(16)O, as for the other C(2v)-type ozone isotopomers, it was necessary to account for the Coriolis type resonances linking the (101) rotational levels with the levels of the (200) and (002) vibrational states and the Darling-Dennison interaction coupling the levels of (200) with those of (002). For the C(s)-type isotopomer, namely (16)O(16)O(17)O, as for (16)O(16)O(18)O and (16)O(18)O(18)O, it proved necessary to also account for an additional DeltaK(a)&equals+/-2 resonance involving the rotational levels from (101) and (002) (J.-M. Flaud and R. Bacis, Spectrochimica Acta Part A 54, 3-16 (1998)). Using a Hamiltonian matrix which takes these resonances explicitly into account, precise vibrational energies and rotational and coupling constants were deduced, leading to the following band centers: v(0)(v(1)+v(3))=2078.3496 cm(-1) for (16)O(17)O(16)O and v(0)(v(1)+v(3))=2098.8631 cm(-1) for (16)O(16)O(17)O. Copyright 2001 Academic Press.     

The Perturbation between the G(1)Pi(g) and 2(1)Delta(g) States of (7)Li(2)

We have observed the rotational levels in the v = 2, 3, 5, 6, 7, and 8 vibrational manifolds of the 2(1)Delta(g) state of (7)Li(2) via the A(1)Sigma(+)(u) intermediate levels by DeltaLambda = 2 transitions. This violation of the DeltaLambda = 0, +/-1 selection rule is due to the interaction with the G(1)Pi(g) state. Band-by-band deperturbations of the G(1)Pi(g) approximately 2(1)Delta(g) (v(Pi), v(Delta)) = (11, 2), (12, 3), (15, 5), (16, 6), (18, 7), and (19, 8) bands have been performed. Deperturbed molecular constants and rotational-electronic interaction parameters are reported here. Copyright 2000 Academic Press.     

The nu(1) and nu(3) Bands of the (17)O(16)O(17)O Isotopomer of Ozone

Using 0.002 cm(-1) resolution Fourier transform absorption spectra of an (17)O-enriched ozone sample, an extensive analysis of the nu(3) band together with a partial identification of the nu(1) band of the (17)O(16)O(17)O isotopomer of ozone has been performed for the first time. As for other C(2v)-type ozone isotopomers [J.-M. Flaud and R. Bacis, Spectrochim. Acta, Part A 54, 3-16 (1998)], the (001) rotational levels are involved in a Coriolis-type resonance with the levels of the (100) vibrational state. The experimental rotational levels of the (001) and (100) vibrational states have been satisfactorily reproduced using a Hamiltonian matrix which takes into account the observed rovibrational resonances. In this way precise vibrational energies and rotational and coupling constants were deduced and the following band centers nu(0)(nu(3)) = 1030.0946 cm(-1) and nu(0)(nu(1)) = 1086.7490 cm(-1) were obtained for the nu(3) and nu(1) bands, respectively. Copyright 2000 Academic Press.     

Multiple magnetic transitions in single crystals of Ce_(12)Fe_(57.5)As_(41) and La_(12)Fe_(57.5)As_(41)

Measurements of magnetic and transport properties were performed on needle-shaped single crystals of Ce_(12)Fe_(57.5)As_(41)and La_(12)Fe_(57.5)As_(41).The availability of a complete set of data enabled a side-by-side comparison between these two rare earth compounds.Both compounds exhibited multiple magnetic orders within 2-300 K and metamagnetic transitions at various fields.Ferromagnetic transitions with Curie temperatures of 100 and 125 K were found for Ce_(12)Fe_(57.5)As_(41)and La_(12)Fe_(57.5)As_(41),respectively,followed by antiferromagnetic type spin reorientations near Curie temperatures.The magnetic properties underwent complex evolution in the magnetic field for both compounds.An antiferromagnetic phase transition at about 60 K and 0.2 T was observed merely for Ce_(12)Fe_(57.5)As_(41).The field-induced magnetic phase transition occurred from antiferromagnetic to ferromagnetic structure.A strong magnetocrystalline anisotropy was evident from magnetization measurements of Ce_(12)Fe_(57.5)As_(41).A temperature-field phase diagram was present for these two rare earth systems.In addition,a logarithmic temperature dependence of electrical resistivity was observed in the two compounds within a large temperature range of 150-300 K,which is rarely found in 3D-based compounds.It may be related to Kondo scattering described by independent localized Fe 3d moments interacting with conduction electrons.     

N(2)-Broadening Coefficients in the nu(1) Band of (35)Cl(12)C(14)N

N(2)-broadening coefficients have been measured for 30 lines of cyanogen chloride ((35)Cl(12)C(14)N) at room temperature in the P and R branches of the nu(1) band, using a tunable diode-laser spectrometer. These lines, with J values ranging from 0 to 55, are located in the spectral range 694-736 cm(-1). The collisional widths are obtained by fitting the spectral lines with a Voigt and a Rautian profile. The broadenings coefficients of (35)ClCN-N(2) have also been calculated from a semiclassical theory involving the atom-atom Lennard-Jones model for the intermolecular potential in addition to electrostatic interaction. Copyright 2000 Academic Press.